PL Peak Research Articles

Investigating the catalytic and antibacterial behavior of cesium-doped MoO3 nanostructures against methylene blue dye and MDR E. coli with DFT analysis

Water pollution, exacerbated by inadequate water management practices, has compromised the effectiveness of traditional water treatment technologies. The integration of metal oxide-based nanomaterials in treatment systems has the potential to revolutionize the field of wastewater treatment, providing a sustainable and efficient solution to the growing global water crisis. This study focused on the fabrication of hexagonal cesium (Cs) doped MoO3 nanostructures (NSs) for their potential use as catalytic and antibacterial agents. Various structural, optical, and morphological analysis was conducted to examine these NSs. The UV–Vis spectroscopy results showed that as Cs concentration increased, the band gap energies of MoO3 decreased from 3.5 eV to 3.0 eV. The field emission scanning electron microscopy (FESEM) investigation revealed the plate-like structural morphology of MoO3 formed by overlapping one layer onto another. Cs doping effectively inhibited the recombination of photo-generated charge carriers, resulting in a significant reduction in PL peak intensity for Cs-doped MoO3 compared to MoO3. The prepared NS-reduced methylene blue dye in the absence of light under different pH conditions, reaching 86.8% with 2% Cs-doped MoO3. Density functional theory (DFT), utilizing the Heyd-Scuseria-Ernzerhof hybrid (HSE06) method, was employed to model and compute the interactions between methylene blue (MB) and Cs-doped MoO3 during MB adsorption. Bactericidal experiments on multidrug-resistant Escherichia coli showed that the NSs had remarkable antibacterial action, generating an inhibition zone of 9.15 mm at higher doses using 6% Cs-doped MoO3. Consequently, these findings offer potential significance for research in developing and implementing wastewater disinfection systems.

Nitrogen doping of cuprous oxide films: A surface science perspective

Nitrogen doping of Cu2O films grown on Au(111) and Pt(111) supports was explored by a variety of surface-science techniques, including electron-diffraction, X-ray photoelectron-spectroscopy (XPS), scanning tunneling microscopy and photoluminescence spectroscopy (PL). The films were prepared by Cu vapor deposition and high-pressure oxidation at 50 mbar O2. Nitrogen was inserted by adding N2 to the reactive gas or via sputter doping. Only the latter resulted in a clear N1s signal in XPS, compatible with the insertion of N-atoms at O substitutional sites. The N-doping caused an overall degradation of the oxide lattice and suppressed the formation of the (√3×√3)R30° surface reconstruction observed on pristine Cu2O(111). Moreover, the oxide Fermi level shifted from the valence-band top into the band gap, indicative for a reduced p-type conductivity of the sample upon doping. The N-dopants featured low thermal stability and largely desorbed at around 500 K, leaving behind a pronounced 850 nm PL peak due to O vacancy emission. Our findings indicate that the N-atoms initially occupy O substitutional sites but get removed easily at moderate temperature, casting doubts whether N-doping is a suitable pathway to improve the conductance and luminescence behavior of Cu2O.

Manipulating four-photon absorption of ZnO via Ga doping.

Multi-photon absorption in the second near-infrared (NIR-II) regime has attracted extensive attention due to biological imaging and frequency-upconverted lasing applications. We report the dispersion of four-photon absorption (4 PA) response in pristine and Ga-doped ZnO single crystals over the spectral range 1180-1350 nm. Femtosecond Z-scan results demonstrate that Ga doping can significantly enhance the 4 PA coefficient β4 of ZnO. Interestingly, the wavelength dependency of β4 in Ga-doped ZnO shows a strong resonance around 1215-1250 nm, which is correlated with the PL peak of Ga-doped ZnO at 405 nm. Femtosecond pump-probe measurements validate that Ga doping has no profound impact on the ultrafast carrier relaxation of ZnO, indicating Ga doping leads to a shallow state rather than a deep trap within the bandgap. The possible mechanism of 4 PA enhancement induced by degeneracy with multi-photon absorption resonance to the Ga-doped state is discussed. Our results verify the strong potential of Ga-doped ZnO with tunable nonlinear optical properties as a promising candidate for nonlinear optical and nanophotonic devices in the NIR-II region.

Optoelectronic properties of chemical vapor deposition grown monolayer MoS2 nanowires

Monolayer (1 L) MoS2 nanowire possesses large amount of exposed edges, resulting in unique physical properties differing to the large size flake. Preparation of high quality 1 L MoS2 nanowire using chemical vapor deposition (CVD) is still challenging to the best of our knowledge. Herein, by employing space-confined CVD method using Mo foil as Mo source, 1 L MoS2 nanowires with width of ∼70 nm can be deposited on the surface of 1 L MoS2 flake. Tip-enhanced photoluminescence (TEPL) measurements indicate different PL peak position and intensity distribution across the nanowires. Photosensitive Kelvin probe force microscopy (KPFM) measurements further reveal that these nanowires exhibit lower Fermi level than the 1 L MoS2 flake, resulting in tunable optosensitive charge transfer under different excitation photon energies form 1.58 eV to 2.33 eV.

InAs/GaAs SK quantum dots stacking: Impact of spacer layer on optical properties

In this paper, we report the optical properties of vertically stacked multilayers of self-organized InAs/GaAs quantum dots QDs with different GaAs spacer layer thicknesses of 10 and 15 nm, using photoluminescence PL measurement. The 10 K PL spectrum exhibits double-emission peaks ambiguously identified in PL spectra where the excitation power dependence reveals that these emission peaks are attributed to fundamental ground state GS of large quantum dots in the low energy side, and first excited state 1ES transitions of large quantum dots in coincidence with fundamental ground state GS of smaller ones, in the high energy side. Both the excitation power dependence and the temperature dependence measurement results exhibited competition between the latter's optical transitions in the QDs, which becomes more prevalent at higher excitation powers. The main PL peak is quenched above 190 K, giving rise to “a 1D miniband”, ascribed to the electronic coupling between QDs along the stacking direction and tuning the emission wavelength around 1.3 μm.Our results emphasize the Key role of the vertically stacked InAs/GaAs QDs structures with thin GaAs spacer layers in optimizing design for long-wavelength devices.

Water sensitized and highly bright multicolor Ni-doped carbon dots nanoarchitectonics in polar solvents towards stable flexible films

To address the issues of low photoluminescence quantum yields (PLQYs), broad PL spectra, and poor stability, multicolor carbon dots (CDs) were synthesized by using different precursors. Blue-emitting CDs were created via a solvothermal synthesis by using citric acid and ethylenediamine while green-emitting CDs were fabricated using O-phenylenediamine. Ni doping further increased the PLQYs and stability of CDs. Ni-doped CDs (Ni-CDs) with blue- and green-emitting were synthesized through a one-step solvothermal method. The PL peak wavelengths of Ni-doped blue CDs (Ni-BCDs) and Ni-doped green CDs (Ni-GCDs) were located at 450 and 540 nm, respectively. After Ni-doping, the average particle size of green-emitting CDs was increased from 2.35 to 2.65 nm. Compared with undoped CDs, Ni-CDs exhibited narrow PL spectra, high PLQYs, and long fluorescent lifetime. The PLQYs of Ni-BCDs and Ni-GCDs were increased to 83.92 and 35.60 %, respectively. Interestingly, the PL peak wavelengths of Ni-doped CDs revealed a red-shift with increasing the solvent polarity (e.g. acetone, acetonitrile, N, N-dimethylformamide, tetrahydrofuran, dimethyl sulfoxide, ethanol, methanol, and H2O). In addition, the PL peaks of green-emitting Ni-CDs generated a large red-shift with increase the ratio of water in organic solvents compared with blue one. Namely, solid Ni-GCDs powders also revealed water dependent PL. After incorporating the CDs in flexible films, Ni-GCDs still revealed high brightness and stability. These results supplied important possibility for the application of multicolor CDs.

Synthesis and Characterization of WO3/BiVO4/Graphene Ternary Nanocomposites for the Photodegradation of Methlyene Blue and Tetracycline

In this study, a hydrothermal method was employed to synthesize the ternary nanocomposites comprising WO3/BiVO4/Graphene, all driven by visible light. The characteristics of these nanocomposites were interpreted through techniques such as UV–Vis, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), and photoluminescence spectroscopy (PL). The enhanced performance of the composite, attributed to its heightened capability for separating charge carriers, outperformed that of the individual semiconductor components. The PL results validated the composite's improved charge separation. The nanocomposites have weaker PL peaks, indicating slower e−/h+ recombination. The balanced concentrations of the mixed semiconductors in the composite affected both PL intensity and photodegradation efficiency. The photocatalytic degradation of methylene blue (MB) and tetracycline (TC) was observed by nanocomposites. The heterogeneous nanocomposite WOBV/G-5 with 0.03 mg graphene content has a better photocatalytic activity for both MB (63 %) and TC (80 %) than other concentrations. It has also been investigated using TOC and COD analysis. Moreover, zeta potential analysis and pH analysis have been done to check the conductivity of optimized photocatalyst. Additionally, to check the stability of WOBV/G-5 photocatalyst, recyclability test that shows 58 % degradation rate after five cycles and analysis of XRD after recyclability have also been performed. Role of active species (h+, O2−, and OH.) was observed by using different scavengers (EDTA, BQ, and IPA) in trapping experiment that plays a vital role in photocatalytic degradation process.

High-Efficiency Pure-Red CsPbI3 Quantum Dot Light-Emitting Diodes Enabled by Strongly Electrostatic Potential Solvent and Sequential Ligand Post-treatment Process.

Efficient pure-red emission light-emitting diodes (LEDs) are essential for high-definition displays, yet achieving pure-red emission is hindered by challenges like phase segregation and spectral instability when using halide mixing. Additionally, strongly confined quantum dots (QDs) produced through traditional hot-injection methods face byproduct contamination due to poor solubility of metal halide salts in the solvent octadecene (ODE) at low temperatures. Herein, we introduced a novel method using a benzene-series strongly electrostatic potential solvent instead of ODE to prevent PbI2 intermediates and promote their dissolution into [PbI3]-. Increasing methyl groups on benzene yields precisely sized (4.4 ± 0.1 nm) CsPbI3 QDs with exceptional properties: a narrow 630 nm PL peak with photoluminescence quantum yield (PLQY) of 97%. Sequential ligand post-treatment optimizes optical and electrical performance of QDs. PeLEDs based on optimized QDs achieve pure-red EL (CIE: 0.700, 0.290) approaching Rec. 2020 standards, with an EQE of 25.2% and T50 of 120 min at initial luminance of 107 cd/m2.

Introduction of Co atoms into CdS thin films for improving photovoltaic properties

This paper represents a systematic work on the fabrication of chemical bath-grown CdS films with and without Co atoms and their photovoltaic performances in hybrid solar cells. Structural properties showed 1% Co-doping promoted crystal quality of CdS films. However, a poor crystal quality was developed above 3% Co concentrations. A reduction in sphere size of CdS samples was observed for 1% Co-doping which was ascribed to slow growth of film. Optical examination demonstrated CdS films with 1% Co-doping displayed the highest transparency of 85% in the visible and near-infrared regions, which were explained by the improvement of crystal quality. A maximum band gap of 2.43 eV was found for 1% Co-doped CdS films, whereas an increase in Co concentration to 7% led to a decline in the band gap of CdS that was attributed to sp-d exchange interaction. Photoluminescence data showed Co-doped CdS films had lower PL peak intensity than that of CdS, demonstrating a decrease in the number of intrinsic defects. Photovoltaic measurements displayed that the best efficiency of 0.488% was achieved for CdS-based device including 1% Co atoms, which were almost a seven-fold boost in overall efficiency compared to bare CdS-based device. The enhancement in power conversion efficiency originated from an increase in short-circuit current density of 1% Co-doped CdS-based photovoltaic cell.

Tunable band gap energy of l-Cysteine-assisted formation of Mn-doped ZnS interconnected nanoparticles for electro-optic applications

Interconnected pure and Mn2+-doped ZnS (ZnS: Mn) nanostructures were obtained via l-Cysteine-assisted synthetic strategy. The obtained interconnected nanostructures have been investigated systematically for their respective structural, morphological, optical and photoelectric properties. The attained XRD results reveal the cubic zinc blended structure of ZnS for all the synthesized specimens. The average grain size is found to be about ∼4.5 nm for the pure ZnS nanoparticles and ∼4.2 nm for the 3% Mn2+-doped ZnS nanoparticles which have been computed using the Debye‐Scherrer equation. The recorded TEM results indicate the interconnected nanoparticles of 4–7 nm forming the flakes which are about 200 nm in size for both the pure and Mn2+-doped ZnS NPs. Optical absorbance spectrum indicates the incorporation of Mn which induces a red shift whereby the maximum absorption of the material is witnessed. The band gap energy of the pure, 1%, 2% and 3% Mn2+-doped ZnS NPs are found to be 4.09, 3.75, 3.38 and 3.23 eV, respectively. PL peak intensity is linearly decreased with respect to the doping percentage. Enhanced electrical conductivity for ZnS nanomaterials doped with Mn2+ has been authenticated experimentally. Based on the optical and electrical properties, the Mn-doped ZnS NPs can be a potential candidate for electro-optic applications.

Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films

We evaluated the effect of O atoms on the postannealed BaSi2 films grown by molecular beam epitaxy. Postannealing (PA) in an Ar atmosphere at a pressure of 1.9 × 105 Pa increased the O concentration to 7 × 1020 cm−3 in the bulk region and further increased to ∼1022 cm−3 at the BaSi2/Si interface. Cracks formed during the PA process, allowing O to enter more easily to the BaSi2 films. In the x-ray photoelectron spectroscopy spectrum of the Si 2s core level measured at 10 nm from the surface, a shift of the peak related to SiOx was detected, indicating a change in the bonding state of Si and O in this region. When PA was performed in vacuum at 10−3 Pa, the photoresponsivity in the short wavelength region was enhanced, with a maximum value of 6.6 A W−1 at 790 nm. The O concentration in the film decreased in the sample annealed in vacuum, and the PL peak intensity at 0.85 eV decreased, suggesting that this was due to a decrease in O-related defects compared to the Ar atmosphere. However, agglomeration of BaSi2 caused significant surface roughness, indicating the importance of PA conditions that minimize O uptake and keep the surface smooth for improved performance of BaSi2 solar cells.

Evidence of hot carrier extraction in metal halide perovskite solar cells

AbstractThe presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl)3 solar cell at ambient temperatures and under practical solar concentration. Albeit, in a device architecture that is not suitably designed as a functional hot carrier solar cell. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a nonequilibrium photocurrent at higher fluence in light J–V measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence is shown to compete with a gradual red shift in the PL peak energy as photoinduced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a nonequilibrium carrier distribution are also shown to be distinct from simple lattice heating. This results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification.

Thermally Stable Red-Emitting Ca18K3Sc(PO4)14:Mn2+ Phosphor and Enhanced Luminescence by Energy Transfer Between Ce3+-Eu2+-Mn2.

It is significant and valuable to investigate novel and high-performance red-emitting phosphors for high-quality wLED applications. Based on this consideration, we developed a novel Mn2+-doped red Ca18K3Sc(PO4)14:Mn2+ (CKSP:Mn2+) phosphor. The emission peak of CKSP:Mn2+ is located at 640 nm, presenting a broadband red emission with a fwhm of 79 nm under 405 nm excitation. The CKSP:1.0Mn2+ phosphor shows superior thermal stability. At 150 °C, the integrated PL intensity and peak intensity of the CKSP:1.0Mn2+ phosphor maintain 93.2 and 85.7% of those at 25 °C, respectively. Through the strategy of energy transfer among Ce3+-Eu2+-Mn2+, the PL intensity of Mn2+ has increased by nearly 118 times, and the quantum yield has improved from 6 up to 72%. The structure-related photoluminescence and energy transfer mechanisms are discussed in detail. The as-fabricated wLED pumped by a 370 nm LED chip combining commercial the green (Sr,Ba)2SiO4:Eu2+ phosphor, blue BaMgAl10O17:Eu2+ phosphor, and the as-synthesized CKSP:1.0Mn2+, 0.02Eu2+, 0.40Ce3+ phosphor shows excellent color quality (CCT = 5555 K, Ra = 87), which indicates that the CKSP:1.0Mn2+, 0.02Eu2+, 0.40Ce3+ phosphor has extraordinary broad prospects in future wLED applications.

Synthesis of S-doped g-C3N4 nanostructures by reflux method and study of photocatalytic and photoelectrochemical performances

For the first time, the S-doped g-C3N4 nanostructures (SCN(x)) were prepared by the reflux method as an aqueous-based method with different weight ratios of Na2S (x) and then characterized. The results of S-doped g-C3N4 nanostructures confirmed the presence of sulfur doping in the g-C3N4 structure. Moreover, these nanostructures showed superior photocatalytic efficiency compared to the bulk g-C3N4. Among different SCN(x) nanostructures, SCN(0.2) showed the most remarkable photocatalytic performance. This outcome is attributed to a decrease in the band gap of this sample. The FESEM analysis indicated that the nanoparticles tended to adhere together in SCN(0.2) nanostructure. This phenomenon has led to the reduction of surface roughness, and improving the surface texture quality of this nanostructure. On the other hand, the lowest FWHM and PL peak intensity show an increase in crystallinity and a decrease in the amount of recombination in this nanostructure. Moreover, the evaluation of electrochemical impedance and optical current showed a decrease in the semi-circular pattern and an increase in photocurrent for the optimal sample of SCN (0.2) compared to the bulk g-C3N4. Therefore, the results of investigating the photocatalytic performance of the synthesized nanostructures show that the SCN(x) nanostructures have higher efficiency compared to the bulk g-C3N4. In addition, the SCN(0.2)) sample showed the highest photocatalytic efficiency. Compared to the other conventional deposition methods based on electrostatic or van der Waals forces, this study suggests that using the reflux technique to substitute sulfur in the g-C3N4 can be a successful approach due to the chemical bonding on to host framework. Moreover, this method may provide a facile aqueous-based route for doping in the g-C3N4 layered structure and can offer advantages compared to other common method such as simple, low cost, excellent distribution uniformity, fast reaction kinetics, high levels of purity, and environmentally friendly process.

Enhanced photoluminescence of hexamolybdenum cluster by anodic aluminum oxide photonic crystals

The enhanced photoluminescence of the Mo6 cluster was first reported by its incorporation into the anodic aluminum oxide (AAO), a photonic structure to delocalize the emission light. Two AAO structures with different pore sizes, densities, and shapes were controlled by pore widening treatment. The deposition of the negatively charged clusters at the bottom of the ordered AAO resulted in narrowing the PL peak at 680 nm with an enhanced intensity of 230 %. In addition, the disordered AAO supported the deposition of clusters on the surface that efficiently adjusted the shift of the PL peak position, obtaining a high intensity by more than 300 % in comparison with that of clusters deposited on the ITO-coated glass. The cluster-integrated photonic crystal could be an interesting material for applications that require efficient luminescence.

Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance

Abstract Light-emitting diodes (LEDs) are widely used as next-generation light sources because of their various advantages. However, their luminous efficiency is remarkably low at the green-emission wavelength. The luminous efficiencies of InGaN/GaN quantum wells (QWs) significantly decrease with increasing indium content in the green wavelength region, mainly owing to the quantum-confined Stark effect (QCSE). This green gap problem can be solved using QWs grown on semi-polar GaN substrates, such as the {11–22} planes, to reduce the QCSE. We propose that the use of surface plasmons (SPs) is a promising way to improve the light emission efficiency of light-emitting materials such as InGaN/GaN QWs. SP resonance increases the spontaneous emission rates of the excited states, causes a relative reduction in non-radiative relaxation, and ultimately increases the internal quantum efficiencies. In this study, the light emissions of InGaN/GaN QWs grown on polar and semi-polar GaN were investigated using micro-photoluminescence (PL). We successfully enhanced the light emission of semi-polar GaN via SP resonance. The PL peak intensities and wavelengths were mapped and compared to determine the underlying mechanisms. We also measured the emission lifetimes by time-resolved PL and interpreted the detailed mechanism of SP-enhanced emissions. It was found that SP resonances can control not only the emission efficiency but also the exciton dynamics, such as exciton localization effects, QCSE screening, and defect level saturation. We conclude that the green gap problem can be solved by SP-enhanced light emission in semipolar InGaN/GaN.

Mn(II)-Activated Zero-Dimensional Zinc(II)-Based Metal Halide Hybrids with Near-Unity Photoluminescence Quantum Yield.

As derivatives of metal halide perovskite materials, low-dimensional metal halide materials have become important materials that have attracted much attention in recent years. As one branch, zinc-based metal halides have the potential for practical applications due to their lead-free, low-toxicity and high-stability characteristics. However, pure zinc-based metal halide materials are still limited by their poor optical properties and cannot achieve large-scale practical applications. Therefore, in this work, we report an organic-inorganic hybrid zero-dimensional zinc bromide, (TDMP)ZnBr4, using transition metal Mn2+ ions as dopants and incorporating them into the (TDMP)ZnBr4 lattice. The original non-emissive (TDMP)ZnBr4 exhibits bright green emission under the excitation of external UV light after the introduction of Mn2+ ions with a PL peak position located at 538 nm and a PLQY of up to 91.2%. Through the characterization of relevant photophysical properties and the results of theoretical calculations, we confirm that this green emission in Mn2+:(TDMP)ZnBr4 originates from the 4T1 → 6A1 optical transition process of Mn2+ ions in the lattice structure, and the near-unity PLQY benefits from highly localized electrons generated by the unique zero-dimensional structure of the host material (TDMP)ZnBr4. This work provides theoretical guidance and reference for expanding the family of zinc-based metal halide materials and improving and controlling their optical properties through ion doping.

Dual ligands synergy enables thermal and moisture stability-enhanced blue quasi-2D perovskite for efficient light-emitting diodes

Quasi-2D metal halide perovskite is rising for efficient blue light-emitting diodes due to strong quantum confinement and tunable emission, while a challenge remains in its poor stability of n-phase distribution under external stresses. Herein, the stable blue quasi-2D perovskite under heat and moisture conditions is achieved by dual ligand engineering. The Lewis base moieties − SO3− from taurine (3S) bind tightly with perovskite edges, inhibiting Ostwald ripening of the perovskite phase caused by the heat, and 3, 3-diphenylpropylamine (DPPA) provides a strong hydrophobicity to the perovskite film, suppressing phase disproportionation induced by the moisture. Accordingly, the blue perovskite film, modified synergistically by the 3S and DPPA dual ligands, maintains its initial photoluminescence quantum yield (PLQY) after over 200 h with 70 °C heating, and only exhibiting a redshift in PL peak wavelength less than 10 nm. Exposing under environment condition of 20 % relative humidity for 300 h, the blue perovskite film still retains its initial PL peak wavelength with PLQY exceeding 50 % of the initial value. This achievement establishes a notable strategy for enhancing both the thermal and moisture stability of blue quasi-2D perovskite. Furthermore, the light-emitting diodes based on the perovskite films display the enhanced operating stability. This work offers an efficient strategy for stabilizing blue quasi-2D perovskite and the corresponding devices for the display application.

Solution-grown millimeter-scale Mn-doped CsPbBr3/Cs4PbBr6 crystals with enhanced photoluminescence and stability for light-emitting applications.

Metal halide perovskites are particularly emerging for optoelectronic applications in light-emitting diodes, photodetectors, and solar cells due to their flourishing photophysical properties. However, the poor stability of three-dimensional (3D) lead halide perovskite nanocrystals (NCs) significantly hampers their optoelectronics and photovoltaics applications. Embedding 3D perovskites into zero-dimensional (0D) perovskite crystals and doping ions of appropriate elements into host lattices provide effective approaches to improve the stability and optical-electronic performance. In this study, millimeter-scale Mn-doped and undoped CsPbBr3/Cs4PbBr6 perovskite crystals were successfully fabricated by a one-step slow cooling method. We systematically investigated the effects of Mn2+ ion doping on the PL performance and stability of CsPbBr3/Cs4PbBr6 crystals. Compared with undoped crystals, the existence of Mn2+ ions not only blue-shifted the PL peak but also improved the luminescence performance and stability of the prepared millimeter-sized crystals. Moreover, doping Mn2+ ions can increase the proportion of radiative recombination at low temperature, which may be because Mn2+ ions can effectively accelerate the decay of a dark exciton by the magnetic mixing of bright and dark excitons. In addition, green LED devices with high efficiency packaged as-grown crystals are explored, which promises further application in display backlights.

Elite basketball game external load varies between different teams and competition

Understanding the external load demands of basketball games is fundamental information for training planning and programming. However, there is a scarcity of information about external load during official games at high-level basketball. The purpose of this research was to investigate basketball game external load differences between two elite basketball teams involved in separate competitions. External load demands experienced by forty-six elite basketball players (from two teams) were analyzed using inertial devices during official basketball games. External load was expressed with calculated (PlayerLoad, PL, averaged and in different time epochs) and inertial movement analysis variables (acceleration, deceleration, change of direction and jump). The results showed that the Euroleague team has a higher peak PL in epochs of 30-s (p<.001) and 60-s (p=.02) with moderate and small effect sizes compared to the Eurocup team. The Eurocup team had a significantly higher number of low and moderate accelerations and changes of direction with effect sizes from 0.34 to 1.15. In conclusion, external load demands in basketball vary depending on the team and league therefore practitioners should consider the specific level and style of play when comprising a training plan. Furthermore, practitioners should rely on their own team’s external load values for training load management, rather than attempting to adhere to standards established by external sources.