Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(1 1 1)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(1 1 1)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbour distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150–350 °C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 °C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to reduced adatom migration length. A common feature of the growth morphology for all explored conditions is the formation of hillocks or pyramids with sometimes well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks. This InAs growth at the pillar bases and between pillars is investigated in detail in dependence of MBE growth conditions.
Read full abstract