Piezotronic Effect Research Articles

Piezoelectricity in NbOI2 for piezotronics and nanogenerators

2-dimensional (2D) piezoelectric materials have gained significant attention due to their potential applications in flexible energy harvesting and storage devices. Recently, niobium oxide dihalides NbOI2 stands out as a multifunctional anisotropic semiconductor family with an exceptionally high lateral piezoelectric constant (~21.8 pm/V), making it a promising candidate for energy conversion applications. Here we report the experimental observation of anisotropic in-plane piezoelectricity in multilayer NbOI2. Current-voltage relationships reveal a significant piezotronic effect in two typical crystalline orientations. Additionally, cyclic tensile and release experiments demonstrate an intrinsic current output of up to 140 pA when subjected to a tensile strain of 0.51%. A flexible piezoelectric nanogenerator prototype is demonstrated on the human finger and wrist, which opens up new avenues for the development of wearable electronic devices and provides valuable insights for further exploration in this field.

Theory of piezotronic and piezo-phototronic effects on high performance perovskite solar cells

Piezotronic and piezo-phototronic effects can effectively modulate the Schottky barrier height (SBH) of the metal-semiconductor contact and the built-in electric field. Most models focus on the built-in electric field of perovskite solar cells, and polarization-modulated SBH is missing. We investigated piezotronic and piezo-phototronic effects on the Schottky barrier and built-in electric field of perovskite solar cells. A model of the surface potential induced by polarization was developed. The analytical and numerical results are calculated for perovskite solar cells. We found that the piezo-phototronic effect can significantly increase the performance of perovskite solar cells by reducing the height of the Schottky barrier. This model not only provides a fundamental physical picture of the piezotronic and piezo-phototronic effect on perovskite solar cells, but also paves a new path to develop high-efficiency perovskite solar cells.

Giant piezotronic effect in ferroelectric field effect transistor

Giant piezotronic effect in ferroelectric field effect transistor

Electric pulse-tuned piezotronic effect for interface engineering

Investigating interface engineering by piezoelectric, flexoelectric and ferroelectric polarizations in semiconductor devices is important for their applications in electronics, optoelectronics, catalysis and many more. The interface engineering by polarizations strongly depends on the property of interface barrier. However, the fixed value and uncontrollability of interface barrier once it is constructed limit the performance and application scenarios of interface engineering by polarizations. Here, we report a strategy of tuning piezotronic effect (interface barrier and transport controlled by piezoelectric polarization) reversibly and accurately by electric pulse. Our results show that for Ag/HfO2/n-ZnO piezotronic tunneling junction, the interface barrier height can be reversibly tuned as high as 168.11 meV by electric pulse, and the strain (0–1.34‰) modulated current range by piezotronic effect can be switched from 0–18 nA to 44–72 nA. Moreover, piezotronic modification on interface barrier tuned by electric pulse can be up to 148.81 meV under a strain of 1.34‰, which can totally switch the piezotronic performance of the electronics. This study provides opportunities to achieve reversible control of piezotronics, and extend them to a wider range of scenarios and be better suitable for micro/nano-electromechanical systems.

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability.

Piezotronic effect utilizing strain-induced piezoelectric polarization to achieve interfacial engineering in semiconductor nanodevices exhibits great advantages in applications such as human-machine interfacing, micro/nanoelectromechanical systems, and next-generation sensors and transducers. However, it is a big challenge but highly desired to develop a highly sensitive piezotronic device based on piezoelectric semiconductor wafers and thus to push piezotronics toward wafer-scale applications. Here, we develop a bicrystal barrier-based piezotronic transistor for highly sensitive pressure sensing by p-GaN single-crystal wafers. Its pressure sensitivity can be as high as 19.83 meV/MPa, which is more than 15 times higher than previous bulk-material-based piezotronic transistors and reaches the level of nanomaterial-based piezotronic transistors. Moreover, it can respond to a very small strain of 3.3 × 10-6 to 1.1 × 10-5 with high gauge factors of 1.45 × 105 to 1.38 × 106, which is a very high value among various strain sensors. Additionally, it also exhibits high stability (current stability of 97.32 ± 2.05% and barrier height change stability of 95.85 ± 3.43%) and high linearity (R2 ∼ 0.997 ± 0.002) in pressure sensing. This work proves the possibility of designing a bicrystal barrier as the interface to obtain a strong piezotronic effect and highly sensitive piezotronic devices based on wafers, which contributes to their applications.

Highly-efficient photocatalytic hydrogen evolution enabled by piezotronic effects in SrTiO3/BaTiO3 nanofiber heterojunctions

The synergistic effect between piezoelectric and photocatalytic behaviors presents an interesting avenue to enhance the water-splitting processes for hydrogen production. Through a combination of experimental findings and theoretical calculations, we propose that the piezoelectric field inherent in these materials may decrease the bandgap of piezo-photocatalysts, while the Z-scheme heterojunction structure facilitates electron transfer. Leveraging the synergistic effects of heterojunction formation and piezoelectric assistance, we demonstrate that the incorporated piezoelectric BaTiO3 significantly enhances the hydrogen evolution rate of hybrid SrTiO3/BaTiO3 nanofibers to 1950.2 μmol·g–1·h–1. This surpasses the rates achieved by pure SrTiO3 and BaTiO3 counterparts by 2.4 and 4.1 times, respectively, and notably exceeds those of perovskite-based piezo-photocatalysts ever reported. The present work offers a valuable pathway for piezoelectric-assisted photocatalytic mechanism insight and sustainable hydrogen production, toward a remarkable advancement in pursuit of efficient and environmentally-friendly energy solutions.

Transport studies in piezo-semiconductive ZnO nanotetrapod based electronic devices

ZnO nanotetrapods (ZnO NTs) with a non-centrosymmetric crystal structure consisting of four 1-D arms interconnected together through a central crystalline core, introduce interesting piezoelectric semiconducting responses in nanorods in the bent state. Considering the widespread applications of nanotetrapods in semiconductor devices, it becomes very crucial to establish a coupled model based on piezoelectric and piezotronic effects to investigate the carrier transport mechanism, which is being reported here in detail for the first time. In this work, we established a multiphysics coupled model of stress-regulated charge carrier transport by the finite element method (FEM), which considers the full account of the wurtzite (WZ) and zinc blende (ZB) regions as well as the spontaneous polarization dependence and the dependence of the material properties on the arm orientation. It is discovered that the forward gain of ZnO NT in the lateral force working mode is almost 50 % higher than that in the nanorod or in the normal force working mode while the reverse current is reduced to negligible. Through the simulation calculations and corresponding analysis, it is confirmed that the developed piezoelectric polarization charges are able to regulate the transport and distribution of carriers in ZnO crystal, which lays a theoretical foundation for the application of piezo-semiconductive ZnO NT devices in advanced technologies.

Fabrication of piezotronic ZnO p-n homojunction via metal/oxygen defects modulation for efficient photoelectrocatalysis

Homojunction is a viable alternative strategy to realize excellent charge separation for enhancing photoelectrocatalytic performance. However, the feasible regulation of the homojunction interface remains challenging. Herein, a ZnO n-p homojunction with the piezotronic effect is constructed via an in-situ solvothermal method for enhancing photoelectrocatalytic activity. ZnO nanorods are transformed from n-type to p-type ZnO nanoparticles with zinc vacancies, leading to the n-p homojunction. The optimal NPZ-36 exhibits a superior photocurrent density of 1.56 mA/cm2 at 1.23 V vs. RHE and a high incident photon to current conversion efficiency of 75 % at 360 nm. Impressively, with the merits of inherent piezoelectric and photocatalytic properties of wurtzite ZnO, the piezoelectric-enhanced photoelectrochemical activity originates from the simultaneous promotion of bulk charge transfer and interfacial charge separation in ZnO n-p homojunction. The photocurrent density of NPZ-36–900 can reach to 2.02 mA/cm2 under the stirring rate of 900 rpm, which is 2.1 times higher than that of pure ZnO photoanode.

Construction of piezoelectric photocatalyst Au/BiVO4 for efficient degradation of tetracycline and studied at single-particle level

Piezopotential-assisted catalysis has been proven to be a low-cost and high-efficiency environmental purification process. Herein, Au/bismuth vanadate (BiVO4) piezoelectric photocatalysts are prepared by modifying highly dispersed Au nanoparticles (AuNPs) on piezoelectric BiVO4 microcrystal by a deposition-precipitation approach. Under visible light irradiation and assisted ultrasound excitation, the removal rate of tetracycline was 95% within 60 min, demonstrating the optimum photocatalytic performance over 3Au/BiVO4. The significantly enhanced photocatalytic performance is due to the synergistic coupling of plasmonic and piezotronic effect based on facet engineering. Single-particle spectroscopy technology can provide photoluminescence (PL) lifetime and PL spectra information in the micro-/nano regions, thereby exploring the charge transfer behavior of heterostructures. Single-particle PL images revealed a significant attenuation of PL emission and shortened PL lifetime of 3Au/BiVO4, compared with BiVO4, indicating that high-density dispersed AuNPs promote charge transfer. In situ monitoring of individual BiVO4 and 3Au/BiVO4 particles before and after polarization treatment confirms that the piezoelectric field of the BiVO4 decahedron further promotes separation of photogenerated carriers induced by plasmonic effect. Driven by the piezoelectric potential induced by ultrasonic vibration near the heterostructures, high-energy hot electrons excited on plasmonic AuNPs can be effectively extracted to BiVO4. This work provides new choices for designing high-performance pollutant treatment catalysts.

Layer engineering piezotronic effect in two-dimensional homojunction transistors

The semiconductor junctions based on piezoelectric materials are of great importance for the realization of functionality and versatility in sensing devices. Two-dimensional (2D) stacked materials provide a promising route to design novel semiconductor junctions due to their layer-dependent electronic and optical properties. However, the combination of layer-dependent band structure and piezoelectricity in device designs is rarely explored to date. In this work, we propose piezotronic transistors designed by layer engineering 2D homojunction. A 2D Poisson equation including the piezoelectric polarization is derived and then combined self-consistently with the non-equilibrium Green function to explore the carrier transport. We find a peculiar symmetrical modulation mechanism of piezotronic effect on carrier transport, i.e., flipping the sign of externally applied strain can drive symmetrical transport process regarding bias polarity. Additionally, the results show that the transport is a mixing of thermionic and tunneling current, which are comparable at low bias but predominated by the quantum tunneling effect at high bias. Although our 2D homojunction transistor is similar to Schottky diodes, the on/off ratio and gauge factors are higher than most of metal-semiconductor contact piezotronic devices. Moreover, for the device with symmetrical stacking configurations, increasing layer number in 2D homojunction can decrease the output current but enhance the gauge factors. By contrast, the device performance in asymmetrical stacking systems is insensitive to the variation of layer number. Our demonstration of layer engineering 2D homojunction transistor not only enriches the fundamental physics of piezotronics, but also open an avenue for designing highly sensitive strain sensors based on diverse 2D layered junctions.

Piezotronic and Piezo-Phototronic Effects-Enhanced Core-Shell Structure-Based Nanowire Field-Effect Transistors.

Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core-shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. We performed a sweep analysis of several parameters of the model. The results show that the channel current increases with the channel radial thickness and channel doping concentration, while it decreases with the channel length, gate doping concentration, and gate voltage. Under a tensile strain of 0.39‱, the saturation current change rate can reach 38%. Finally, another core-shell structure-based ZnO/Si nanowire HJFET model with the same parameters was established. The simulation results show that at a compressive strain of -0.39‱, the saturation current change rate is about 18%, which is smaller than that of the Si/ZnO case. Piezoelectric potential and photogenerated electromotive force jointly regulate the carrier distribution in the channel, change the width of the channel depletion layer and the channel conductivity, and thus regulate the channel current. The research results provide a certain degree of reference for the subsequent experimental design of Zn-based HJFETs and are applicable to other kinds of FETs.

Promoting the electron/hole co-extraction using piezotronic effect in Pt/ZnIn2S4/BaTiO3 heterojunctions for photocatalytic synergistic hydrogen evolution and HMF oxidation

Efficient spatial separation of photogenerated carriers is the key to achieving photocatalytic oxidation reduction synergistic reactions, and the built-in electric field generated by piezoelectric effects can provide a strong driving force for charge separation. A novel Pt/ZnIn2S4/BaTiO3 (PBZIS) piezo-photocatalyst with spatial charge separation was successfully constructed through two-step hydrothermal and photodeposition methods. Due to the special 1D/2D core/shell structure, the inner BaTiO3 can served as hole-storage layer, while the outer Pt nanoparticles can acted as electron capture center, thus greatly improving the separation of photo generated charge carriers and achieving spatial separation of redox sites. Under the ultrasound, the polarized electric field induced by the piezoelectric effect can further improve the extraction rate of photo generated holes by BaTiO3 and accelerate surface catalytic reactions. Therefore, the synergism of electron/hole co-extraction and piezoelectric effect construct a directional transmission channel and target active sites for photogenerated electron-holes over PBZIS heterojunctions, reuslting in the highest performance for photocatalytic cooperative H2 evolution (1335.3 μmol g−1 h−1) and HMF oxidation (1070.8 μmol g−1 h−1). This work would inspire the development of high-performance piezo-photocatalysts for the cooperative biomass oxidation coupling with high efficient hydrogen evolution.

A perspective on piezotronics and piezo-phototronics based on the third and fourth generation semiconductors

The rapid development of semiconductor materials and devices has brought tremendous development opportunities to optoelectronics, intelligent manufacturing, Internet of Things, power electronics, and even innovative energy technologies. Among them, the third and fourth generation semiconductors represented by ZnO, GaN, SiC, and Ga2O3 are two kinds of emerging strategic material systems. Due to their large energy bandgaps, they exhibit excellent performance in application scenarios of high voltage, high frequency, and high temperature resistance, making them great candidates in high-power, radio frequency, and optoelectronic devices. The third and fourth generation semiconductors usually possess non-centrosymmetric crystal structures, which makes the piezoelectric polarization effect a fundamental characteristic for the third and fourth generation semiconductors in contrast to the first and second generation semiconductors as represented by Si, Ge, and GaAs. Research studies on the coupling of piezoelectricity, semiconductor, and light excitation properties were coined as piezotronics and piezo-phototronics in 2007 and 2010, respectively, by Zhong Lin Wang. The piezotronic and piezo-phototronic effects open another avenue for further improvement of the performance of electronic and optoelectronic devices. This Perspective will first introduce the basic concepts and principles of piezotronics and piezo-phototronics and the basic characteristics of the third and fourth generation semiconductors. Then, progress, challenges, and opportunities of ideal materials, comprehensive physical models, and outstanding applications based on piezotronics and piezo-phototronics are presented with emphasis. Finally, conclusions and outlooks are drawn for the piezotronics and piezo-phototronics based on the third and fourth generation semiconductors.

Polarization-driven high Rabi frequency of piezotronic valley transistors

The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors.

Enhanced Sonodynamic Cancer Therapy through Iron-Doping and Oxygen-Vacancy Engineering of Piezoelectric Bismuth Tungstate Nanosheets.

Sonodynamic therapy (SDT) is regarded as a new-rising strategy for cancer treatment with low invasiveness and high tissue penetration, but the scarcity of high-efficiency sonosensitizers has seriously hindered its application. Herein, the iron-doped and oxygen-deficient bismuth tungstate nanosheets (BWO-Fe NSs) with piezotronic effect are synthesized for enhanced SDT. Due to the existence of oxygen defects introduced through Fe doping, the bandgap of BWO-Fe is significantly narrowed so that BWO-Fe can be more easily activated by exogenous ultrasound (US). The oxygen defects acting as the electron traps inhibit the recombination of US-induced electrons and holes. More importantly, the dynamically renewed piezoelectric potential facilitates the migration of electrons and holes to opposite side and causes energy band bending, which further promotes the production of reactive oxygen species. Furthermore, Fe doping endows BWO-Fe with Fenton reactivity, which converts hydrogen peroxide (H2 O2 ) in tumor microenvironment into hydroxyl radicals (•OH), thereby amplifying the cellular oxidative damage and enhancing SDT. Both in vitro and in vivo experiments illustrate their high cytotoxicity and tumor suppression rate against refractory breast cancer in mice. This work may provide an alternative strategy to develop oxygen-deficient piezoelectric sonosensitizers for enhanced SDT via doping metal ions.

Manganese oxide-modified bismuth oxychloride piezoelectric nanoplatform with multiple enzyme-like activities for cancer sonodynamic therapy

Sonodynamic therapy (SDT) is considered as a new-rising strategy for cancer therapeutics, but the inefficient production of reactive oxygen species (ROS) by current sonosensitizers seriously hinders its further applications. Herein, a piezoelectric nanoplatform is fabricated for enhancing SDT against cancer, in which manganese oxide (MnOx) with multiple enzyme-like activities is loaded on the surface of piezoelectric bismuth oxychloride nanosheets (BiOCl NSs) to form a heterojunction. When exposed to ultrasound (US) irradiation, piezotronic effect can remarkably promote the separation and transport of US-induced free charges, and further enhance ROS generation in SDT. Meanwhile, the nanoplatform shows multiple enzyme-like activities from MnOx, which can not only downregulate the intracellular glutathione (GSH) level, but also disintegrate endogenous hydrogen peroxide (H2O2) to generate oxygen (O2) and hydroxyl radicals (•OH). As a result, the anticancer nanoplatform substantially boosts ROS generation and reverses tumor hypoxia. Ultimately, it reveals remarkable biocompatibility and tumor suppression in a murine model of 4 T1 breast cancer under US irradiation. This work provides a feasible pathway for improving SDT using piezoelectric platforms.

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an AlN/GaN Core-Shell Nanowire

Piezotronic transistor operating in the quantum tunneling regime has recently roused wide interest for developing ultrasensitive strain sensing with applications in wearable electronics and human-machine interfaces. However, the lack of a strict theoretical demonstration from a quantum perspective renders the development of such an emerging area particularly slow due to their complex fabrication process and vulnerable experimental interference. Here, by combining third-dimensional self-consistent calculation with a nonequilibrium Green's function framework, we study the intrinsic device properties of piezotronic tunneling transistor (PTT) based on $\mathrm{Al}\mathrm{N}/\mathrm{Ga}\mathrm{N}$ core-shell nanowire. The results show that strain-induced piezoelectric polarization can remarkably tune tunneling barrier height and width, both of which are increased by tensile strain and decreased by compressive strain. At a moderate strain amplitude of 1.0% and bias of 2.0 V, the strain-induced change in effective barrier height and width can reach as high as 0.5 eV and 4.0 nm, respectively. This remarkable tunability in the barrier allows for an ultrahigh on/off current ratio ${10}^{17}$, and giant gauge factor 1.2 \ifmmode\times\else\texttimes\fi{} ${10}^{8}$ in current and 1.1 \ifmmode\times\else\texttimes\fi{} ${10}^{13}$ in resistance. The performance can be further optimized by properly tailoring device architectures, including insulator thickness, nanowire length, or core-shell size. Our demonstration of the PTT with combined quantum tunneling and piezotronic effect opens a window for designing highly sensitive, large on/off ratio and low-power strain sensing.

Effectively enhanced photocatalytic performance of layered perovskite Bi2NdO4Cl by coupling piezotronic effect.

The coupling between piezoelectricity and photoexcitation is an attractive method for improving the photocatalytic efficiency of semiconductors. Herein, a novel layered perovskite photocatalyst Bi2NdO4Cl (BNOC) has been successfully prepared via solid-state reaction. PFM results confirm that BNOC has piezoelectricity, and its piezo-photocatalytic degradation performance was evaluated for the first time using tetracycline hydrochloride (TH) as a pollutant model. The results show that the piezo-photocatalytic degradation rate constant is about 1.5 times higher than the sum of the individual photo- and piezo-catalytic components. This synergistic enhancement can be attributed to the band tilting-induced piezoelectric polarization charges and formation of a piezoelectric field, which accelerates the photoinduced charge carrier separation and effectively enhanced the photocatalytic performance. This work may facilitate the development of novel piezoelectric photocatalytic materials that are highly sensitive to the mechanical energy of discrete fluids, and offer ideas for piezo-photocatalysis in environmental applications.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics.

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Piezotronic Effect Induced Schottky Barrier Decrease to Boost the Plasmonic Charge Separation of BaTiO3-Au Heterojunction for the Photocatalytic Selective Oxidation of Aminobenzyl Alcohol.

Charge carrier transfer efficiency as a crucial factor determines the performance of heterogeneous photocatalysis. Here, we demonstrate a simple nanohybrid structure of BaTiO3-Au (BTO-Au) for the efficient selective oxidization of benzyl alcohol to benzaldehyde upon piezotronic effect boosted plasmonic photocharge carrier transfer. With the aid of ultrasonic mechanical vibration, the reaction rate of the photocatalytic organic conversion would be considerably accelerated, which is about 4.2 and 6.2 times higher than those driven by sole visible light irradiation and sole ultrasonication, respectively. Photoelectrochemical tests under ultrasonic stimuli reveal the BTO-Au catalytic system is independent of the light intensity, showing a consistent photocurrent density, over a wide range of incident light brightness. The largely enhanced photocatalytic activity can be ascribed to the synergetic effect of surface plasmonic resonance (SPR)-piezotronic coupling by which a built-in electric field induced by the piezotronic effect significantly favors the oriented mobilization of energetic charge carriers generated by the SPR effect at the heterojunction. Notably, a decrease of the Schottky barrier height of ∼0.3 eV at the BTO-Au interface is verified experimentally, due to the band bending of BTO induced by the piezotronic effect, which can greatly augment the hot electron transfer efficiency. This work highlights the coupling of the piezotronic effect with SPR within the BTO-Au nanostructure as a versatile and promising route for efficient charge transfer in photocatalytic organic conversion.