Physics-based Insulated Gate Bipolar Transistor Research Articles

ANN-Aided Data-Driven IGBT Switching Transient Modeling Approach for FPGA-Based Real-Time Simulation of Power Converters

This article develops a novel feedforward neural networks (FFNNs)-based device-level model from a physical insulated-gate bipolar transistor (IGBT) model dataset by the proposed artificial neural network (ANN)-aided data-driven IGBT switching transient modeling approach, so that the physics-based IGBT models can be indirectly integrated into field programmable gate array (FPGA)-based real-time simulation of power converters. The main concept is to fit the turn-on/turn-off transient waveforms generated from a physics-based IGBT model by using multiple FFNNs with the same structure but different coefficients. Each FFNN is trained by a dataset covering the transient voltage/current values corresponding to all possible operating conditions at a given discrete time point during a transient. All FFNN coefficients are stored on FPGA. By applying the corresponding FFNN coefficients at each simulation time step, the switching transient waveforms can then be accurately reproduced. The proposed FFNN-based device-level model is designed into two intellectual property (IP) cores at 200 MHz with a fully pipelined structure, which allows the model to authentically reproduce transient waveforms with a 5-ns resolution. A four-phase floating interleaved boost converter (FIBC) is selected as a case study and simulated on a NI-PXIe FlexRIO FPGA real-time platform. The FPGA-based experimental results are compared with that from the LTspice offline simulator, which enables the validation of the accuracy and effectiveness of the proposed modeling approach for real-time simulation of power converters.

Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters

As a classical insulated gate bipolar transistor (IGBT) structure, the trench-gate field-stop (FS) IGBT has been widely used. For more convenient application, physics-based trench-gate FS IGBT models have received great attentions due to its effectiveness in simulating key device properties. However, current IGBT modeling studies for this popular IGBT chip seldom investigate the depletion layer behavior under the trench-gate structure. This article first derives the physics-based miller capacitance formula for the trench-gate structure according to finite element method (FEM) simulation. Another haunting issue for these physics-based IGBT models is that the intrinsic device parameters are difficult to be extracted appropriately. Thus, an FEM FS IGBT model is established in Sentaurus TCAD as the benchmark. Then, an improved parameter extraction procedure for a Fourier-series-based (FSB) IGBT model is proposed based on the improved miller capacitance formula. By the particle swarm optimization algorithm, key device parameters for the FSB IGBT model can be successfully extracted by fitting the simulated waveforms to those by FEM simulation at a randomly selected turn-off operating condition. Parameters extracted through the proposed procedure using the FSB IGBT model with the improved miller capacitance formula are very close to the device parameters of the FEM model. More importantly, the reliability and the robustness of the extracted parameters are further validated by comparing the waveforms of FSB model with those of FEM model at different operating conditions.

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

This paper presents a new lumped-charge approach-based physical model for high power soft-punchthrough (SPT) insulated gate bipolar transistor (IGBT). The IGBT physical models should consider the fabrication technologies used to optimize the device behavior for specific applications. The proposed model focuses on the chip structure designed by ABB for high power IGBT and can apply to other IGBTs with homogeneous structures. Based on the SPT+ concept combined with an enhanced planar cell design for the optimization of lower power losses, different particular mathematical approaches are used to describe their functions in the proposed model. The temperature dependence of the model is also included because the chip temperature of IGBT in practical applications is higher than the room temperature and changed with service conditions. The physics-based IGBT model has been implemented in PSpice and validated with experiments, which considers both the block voltage nonpunchthrough condition and punchthrough condition during turn-OFF transient. The simulation results show a good agreement with the experiment results.

Large-Scale Nonlinear Device-Level Power Electronic Circuit Simulation on Massively Parallel Graphics Processing Architectures

Device-level power electronic circuit simulation is so cumbersome that engineers are forced to make model simplification or reduce circuit size to obtain a reasonable execution time for repeated simulation runs. This paper proposes a massive-thread parallel simulation of large-scale power electronic circuits employing device-level modeling on the graphics processors (GPUs) to obtain higher data throughput and lower execution times. Parallel massive-thread modules are proposed for the nonlinear physics-based insulated gate bipolar transistor and power diode components. The nonlinear solution algorithm comprised of Newton–Raphson iterations and partial LU decomposition is fully parallelized on the GPU. Furthermore, the commonly used behavioral model with reduced computational complexity is also employed to represent the switches. The developed simulation codes are used to run large-scale test cases of the modular multilevel converter (MMC) system. The accuracy and efficiency of the GPU-based parallel simulation are compared with sequential CPU-based codes and the SaberRD program to show the advantages of the parallelized simulation; execution time speedups of 15 times and 70 times are reported for the MMC system using the nonlinear physics-based modeling and behavior-based modeling, respectively.

An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact Models

A sequential parameter extraction technique describing the fitting targets and related parameters for compact insulated-gate bipolar transistor (IGBT) models is presented. Using 2-D device simulation data for a trench-type IGBT as reference, the performance of HiSIM-IGBT as an example of a compact IGBT model is compared to an IGBT macromodel. Parameter extraction with the compact model is fast and straightforward, owing to its physics-based modeling. Even with minimal extraction effort, the compact model fits the dc current and capacitance and reproduces the transient turnoff characteristics accurately.

A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region

A physics-based model of insulated gate bipolar transistor (IGBT) with all free-carrier injection conditions in a base region is presented, from which the ambipolar transport equations (ATEs) in high-level injection and low-level injection are deduced separately. Moreover, the boundary conditions of ATE are determined. In a more compact solution a Fourier-series solution for the ATE is used in this paper. Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach. Physics-based IGBT model is used which is proved accurate.

Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects

An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accurate for both inductive turn-off and inductive turn-on simulations, is modified to account for planar-gate IGBT 2-D effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results.

Physics-Based SPICE-Model for IGBTs With Transparent Emitter

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The insulated gate bipolar transistor (IGBT) is still the most used power semiconductor device for applications at medium power and frequency ranges, due to its good compromise between on-state loss, switching loss, and ease of control. IGBT models should consider the different available fabrication technologies aimed to optimize the device behavior for particular applications. Physics-based models of power electronic devices are the most accurate for circuit simulation purposes, since they can take into account device structure and the most important semiconductor phenomena. Moreover, they can give an insight into internal device behavior. However, such models are often too complex to be implemented in circuit simulators like the simulation program with integrated circuit emphasis (SPICE) family. This paper presents a physics-based IGBT model implemented in PSpice, which considers a structure with transparent emitter and can be applied to homogeneous structures with or without a field-stop layer. </para>

Modeling of IGBT Resistive and Inductive Turn-On Behavior

Although insulated-gate bipolar-transistor (IGBT) turn-on losses can be comparable to turn-off losses, IGBT turn-on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simulations using physics-based semiconductor models. Under resistive load conditions, it is critical to accurately model the conductivity-modulation phenomenon. Under clamped inductive load conditions at turn-on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. Physics-based IGBT and diode models are used that have been proved accurate in the simulation of IGBT turn-off.

Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the 12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method.

An experimentally verified IGBT model implemented in the Saber circuit simulator

A physics-based insulated gate bipolar transistor (IGBT) model is implemented in the general-purpose circuit simulator Saber. The IGBT model includes all of the physical effects that have been shown to be important for describing IGBTs, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of the conditions studied. >