Photovoltaic Performance Parameters Research Articles

High-efficiency ultra-thin GaAs solar cells based on ITO/Ag/ITO transparent electrodes and photonic crystals

Ultrathin photovoltaic technology has great potential to improve efficiency and reduce costs. However, achieving optical thickness requires an effective light capture strategy. In this study, for GaAs thin film solar cells with an active layer thickness of 500 nm, we adopt a combination strategy of front-end ITO/Ag/ITO transparent electrodes and back-end photonic crystals (PC). By employing the finite difference time domain (FDTD) simulation, we verify that ITO/Ag/ITO transparent electrodes and AlGaAs PC can effectively enhance the light-harvesting capacity of cells. The proposed cell structure has a spectral absorption rate (SAR) of 0.9781 in the visible wavelength range. To further optimize the photovoltaic performance parameters, we optimize the doping concentration of the pn junction in the cell. Finally, the short circuit current density Jsc, open circuit voltage Voc, fill factor (FF) and photoelectric conversion efficiency (PCE) of GaAs thin film solar cells are successfully increased to 31.10mAcm−2, 1.28V, 88.18% and 35.12%, respectively. This provides crucial experimental validation and theoretical guidance for advancing ultra-thin photovoltaic technology.

Advanced Optoelectronic Modeling and Optimization of HTL-Free FASnI3/C60 Perovskite Solar Cell Architecture for Superior Performance.

In this study, a novel perovskite solar cell (PSC) architecture is presented that utilizes an HTL-free configuration with formamide tin iodide (FASnI3) as the active layer and fullerene (C60) as the electron transport layer (ETL), which represents a pioneering approach within the field. The elimination of hole transport layers (HTLs) reduces complexity and cost in PSC heterojunction structures, resulting in a simplified and more cost-effective PSC structure. In this context, an HTL-free tin HC(NH2)2SnI3-based PSC was simulated using the solar cell capacitance simulator (SCAPS) within a one-dimensional framework. Through this approach, the device performance of this novel HTL-free FASnI3-based PSC structure was engineered and evaluated. Key performance parameters, including the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency (PCE), I-V characteristics, and quantum efficiency (QE), were systematically assessed through the modulation of physical parameters across various layers of the device. A preliminary analysis indicated that the HTL-free configuration exhibited improved I-V characteristics, with a PCE increase of 1.93% over the HTL configuration due to improved electron and hole extraction characteristics, reduced current leakage at the back contact, and reduced trap-induced interfacial recombination. An additional boost to the device's key performance parameters has been achieved through the further optimization of several physical parameters, such as active layer thickness, bulk and interface defects, ETL thickness, carrier concentration, and back-contact materials. For instance, increasing the thickness of the active layer PSC up to 1500 nm revealed enhanced PV performance parameters; however, further increases in thickness have resulted in performance saturation due to an increased rate of hole-electron recombination. Moreover, a comprehensive correlation study has been conducted to determine the optimum thickness and donor doping level for the C60-ETL layer in the range of 10-200 nm and 1012-1019 cm-3, respectively. Optimum device performance was observed at an ETL-C60 ultra-thin thickness of 10 nm and a carrier concentration of 1019 cm-3. To maintain improved PCEs, bulk and interface defects must be less than 1016 cm-3 and 1015 cm-3, respectively. Additional device performance improvement was achieved with a back-contact work function of 5 eV. The optimized HTL-free FASnI3 structure demonstrated exceptional photovoltaic performance with a PCE of 19.63%, Voc of 0.87 V, Jsc of 27.86 mA/cm2, and FF of 81%. These findings highlight the potential for highly efficient photovoltaic (PV) technology solutions based on lead-free perovskite solar cell (PSC) structures that contribute to environmental remediation and cost-effectiveness.

Formation of a potential barrier by a ZnSXSe1−X electron-blocking layer to improve the efficiency of CdSe0.3S0.7/CdSe quantum dot sensitized solar cells

We designed and fabricated multilayer quantum dots sensitized solar cells (QDSCs) with TiO2 NPs/CdSe0.3S0.7/CdSe/ZnSXSe1−X, X = S/S + Se = 0, 0.7, 0.8, 0.9, and 1 photoelectrodes to achieve optimum power conversion efficiency (PCE). In the corresponding structure, incoming light is absorbed by the CdSe0.3S0.7 and CdSe quantum dots (QDs), while the ZnSXSe1−X QDs act as an electron blocking layer or passivation layer, forming an energy barrier that restricts electron mobility from the light absorbers to the polysulfide electrolyte. The beneficial effect of the alloyed ZnSXSe1−X layer is the adjustability of its nanoparticle size/bandgap energy proportional to variations in the concentration of anionic precursors X, according to optical results. The PCE value of the reference cell with the TiO2 NPs/CdSe0.3S0.7/CdSe photoanode is 4.15 %. Following the coating of ZnSe, ZnS0.7Se0.3, ZnS0.8Se0.2, ZnS0.9Se0.1, and ZnS QDs via two successive ionic layer adsorption and reaction (SILAR) cycles (2Sc) on the CdSe0.3S0.7/CdSe co-sensitized photoelectrode increasing stability and improving the PCE value to 4.9 %, 5.40 %, 5.70, 5.25 %, and 5.05 %, respectively. Next, by modifying the thickness of the champion cell's passivation layer, the QDSCs with TiO2 NPs/CdSe0.3S0.7/CdSe/ZnS0.8Se0.2 (3Sc) photoelectrode exhibit maximum photovoltaic performance parameters of short circuit current density (JSC) = 26.25 mA/cm2, open circuit voltage (VOC) = 560 mV, fill factor (FF) = 0.42 % and PCE = 6.15 %. This improvement in performance is the result of decreased internal energy loss and recombination of charge carriers at the interface between the electrolyte and photoelectrode, which increases electron collection efficiency and electron injection efficiency in the visible region according to the external and internal quantum efficiency curves.

Integrating Low-Stack Photonic Crystals with the Honeycomb-like Structural Framework to Enhance the Photovoltaic Performance in Perovskite Solar Cells.

An inverse opal structure of SnO2 with a honeycomb morphology is introduced as the framework for the attached perovskite materials and functional layers in the hybrid perovskite-based solar cells simultaneously. Three different pore sizes of polystyrene microsphere layers, with diameters of 350, 480, and 600 nm, were fabricated through a vertical self-assembly vaporization technique. The polystyrene (PS) layer served as the sacrificial template for the inverse opal structure. By controlling the spinning parameters, the inverse opal-structured SnO2 layer was used to constrain them into a single-layer stacking structure. These layers with varying pore sizes were subsequently applied onto a dense electron transport layer that is in contact with the perovskite layer. A carbon electrode is used as photovoltaic solar cells. The major benefits of this approach were systematically analyzed through structural characterizations and various means. The semiphotonic crystal layer induces modulation effects, resulting in increased light absorption and surface area, which leads to a substantial increase in short-circuit density. By studying the electrochemical properties in the dark to exclude the influence of optical effects, we attribute the slight increase in the fill factor to the increased surface area, which enhances carrier transport. Among the different layers, the inverse opal layer prepared with 480 nm polystyrene microspheres displayed superior photovoltaic performance parameters due to its appropriate surface area and relatively higher light absorption. The power conversion efficiency of the MAPbI3 perovskite solar cell showed a relative enhancement of 55%. Additionally, aging tests demonstrated that devices with the additional structural layer exhibited good endurance under conventional atmospheric conditions after 1440 h of aging.

Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D.

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS2/CIGS/Sb2S3/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (C-V), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS2/CIGS/Ni) have shown a PCE of 22.14% with Voc of 0.91 V, Jsc of 28.21 mA cm-2, and FF of 86.31. Conversely, the PCE is improved to 31.15% with Voc of 1.08 V, Jsc of 33.75 mA cm-2, and FF of 88.50 by introducing the Sb2S3 BSF in the structure of FTO/SnS2/CIGS/Sb2S3/Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs.

Synthesis, photophysical, computational characterizations, electrochemical and photovoltaic characteristics of some new quinoline-based hybrid fluorescent dyes

In this work, we have designed and synthesized some new fluorescent heterocyclic systems based on quinoline unit with the aim of providing new and highly effective synthetic dyes for the development of more effective photosensitive materials. The reaction of 8-(4-chlorophenyl)-3-alkyl-5-nitro-3H-imidazo[4′,5':3,4]benzo[1,2-c]isoxazoles with heteroaryl acetonitriles in KOH/MeOH led to the formation of novel 6H-furo[3,2-b]imidazo[4,5-f]isoxazolo[4,3-h]quinoline, 6H-imidazo[4,5-f]isoxazolo[4,3-h]thieno[3,2-b]quinoline and imidazo[4,5-f]isoxazolo[4,3-h]pyrrolo[3,2-b]quinoline at rt. The experimental results of the elemental analysis and spectroscopic data proved the proposed structures of the new fluorescent heterocyclic dyes. The optical properties of the title compounds such as wavelengths of maximum absorbance, fluorescence excitation, fluorescence emission, fluorescence quantum yields, and extinction coefficients were also obtained. The electrochemical characteristics of the title dyes were investigated using the cyclic voltammetry technique and reversible oxidation waves were observed at half-wave potential for these compounds. The HOMO and LUMO energy levels of the dyes were also determined by electrochemical, optical measurements and theoretical calculation. Additionally, I–V curves and the IPCE spectra of the title dyes were screened to investigate their photovoltaic performance parameters. Our experimental results discovered that the photovoltaic performances of the title dyes are in the range of 3.17–4.27 %. Electrochemical impedance spectroscopy (EIS) analysis was also performed to further elucidate the photovoltaic properties of the dyes.

Investigation via simulation of the influence of defects on the photovoltaic performance of single-junction perovskite solar cells based on MAPbI3 using SCAPS-1D

This communication presents a numerical simulation study conducted on Perovskite Solar Cells (PSCs) featuring MAPbI3 as the light-absorbing layer, utilizing the Solar Cell Capacitance Simulator (SCAPS-1D) software. The present study focuses on a single-junction solar cell architecture comprising TiO2/MAPbI3/Spiro-OMeTAD. SCAPS was employed to simulate how changes in the thickness of the absorber layer and the concentration of charges and defects within the absorber material affect the photovoltaic performance parameters of PSCs. The straightforward architecture of the solar cell has streamlined the investigation and optimization of device parameters. The 1D optimization of the PSC proposed in this study has led to optimized thickness of active layers, as well as the concentration of charges and defects within the MAPbI3 absorber material. The present research work reports an optimum thickness of 450 nm for MAPbI3 absorber material. The optimized concentration of defects has been found to be 1014 cm-1. The defect charge type in the absorber layer has not been found to affect the photovoltaic parameters of the PSC.

Effect of various layers on improving the photovoltaic efficiency of Al/ZnO/CdS/CdTe/Cu2O/Ni solar cells

The photovoltaic (PV) cell structure containing Al/ZnO/CdS/CdTe/Cu2O/Ni has been simulated using the SCAPS-1D software. The PV device includes a zinc oxide (ZnO) transparent conductive oxide (TCO) window layer, a cadmium sulfide (CdS) buffer layer, and a cadmium telluride (CdTe) absorber layer. Additionally, an electron reflected-hole transport layer (ER-HTL) comprising cuprous oxide (Cu2O) is introduced between the absorber layer and the back metal contact. Aluminum (Al) and nickel (Ni) serve as the upper/top and back contact materials, respectively, interconnecting the layers. The back contact materials, the thickness of the absorber, buffer, and window layers, the acceptor density of the absorber layer, the donor density of the buffer layer, the series and shunt resistance, as well as temperature, were all modified to investigate the PV performance of this structure. The PV performance parameters are evaluated through the open-circuit voltage (VOC), short-circuit current (JSC), fill factor (FF), and power conversion efficiency (PCE). To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1017 cm−3. These desired densities can be attained by using a window and buffer layer thickness of 100 nm, an absorber layer thickness of 2500 nm, and an ER-HTL of 50 nm. The optimized model demonstrates PV performance characteristics of 1.4811 V for VOC, 28.682434 mA/cm2 for JSC, 74.91 % for FF, and 31.82 % for PCE under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of around 100 % at visible wavelengths.

Improving Photovoltaic Performance of Hybrid Organic-Inorganic MAGeI3 Perovskite Solar Cells via Numerical Optimization of Carrier Transport Materials (HTLs/ETLs).

In this study, a hybrid organic-inorganic perovskite solar cell (PSC) based on methylammonium germanium triiodide (MAGeI3), which is composed of methylammonium (CH3NH3+) cations and germanium triiodide (GeI3-) anions, has been numerically studied using SCAPS-1d codes. An extensive investigation of various electron transport layers (ETLs) and hole transport layers (HTLs) was conducted to identify the most optimal device configuration. The FTO/ZnOS/MAGeI3/PEDOT-WO3 structure performed the highest efficiency of all combinations tested, with an impressive optimized efficiency of 15.84%. This configuration exhibited a Voc of 1.38 V, Jsc of 13.79 mA/cm2, and FF of 82.58%. J-V characteristics and external quantum efficiency (EQE) measurements indicate that this device offers superior performance, as it has reduced current leakage, improved electron and hole extraction characteristics, and reduced trap-assisted interfacial recombination. Optimum device performance was achieved at active layer thickness of 560 nm. These findings may also serve as a basis for developing lightweight and ultra-thin solar cells, in addition to improving overall efficiency. Furthermore, a comprehensive correlation study was conducted to evaluate the optimum thickness and doping level for both ZnOS-ETL and PEDOT-WO3-HTL. The photovoltaic performance parameters of the FTO/ZnOS/MAGeI3/PEDOT-WO3 structure were analyzed over a wide temperature range (275 K to 450 K). The structure exhibited stable performance at elevated operating temperatures up to 385 K, with only minimal degradation in PCE of approximately 0.42%. Our study underscores the promise of utilizing cost-effective and long-term stability materials like ZnOS and PEDOT-WO3 alongside the toxic-free MAGeI3 perovskite. This combination exhibits significant potential for eco-friendly PSC, paving the way for the development of highly efficient ultra-thin PSC.

High-efficiency and cost-effective manufacturing of solar cells based on localized surface plasmonic resonance

Improving photovoltaic efficiency is essential to the early realization of universal solar cell application, which has proven to be the most promising solution to the global energy transition. Therefore, we propose a thin-film GaAs solar cell with TiO2 quantum dots, plasmonic Ag nanoparticles, and the AlGaAs window layer. First, we using the finite difference time domain method to simulate the electromagnetic wave propagation and the solar cell light absorption under set boundary conditions to test whether the TiO2 quantum dots and plasmonic Ag nanoparticles can improve the cell light-trapping ability. The results show that the light absorption of the cell can be maintained above 95% in the visible wavelength range of 300–721 nm, with an average absorption of 97.7%. The photoabsorption effect is particularly prominent at 558 nm, with an absorption rate of 99.86%. The p-n junction doping concentration and the molar fraction of the AlGaAs window layer were optimized to obtain better photovoltaic performance parameters. The results show that AlGaAs reduces incident light loss and possesses a higher potential barrier in the emitter region because of its wider band gap, effectively lowering carrier recombination rate and consequently enhancing the photovoltaics characteristics of the cell. The short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency (PCE) of the thin-film GaAs solar cell improved to 30.01 mA/cm2, 1.247 V, and 33.43%, respectively. Thus, this study provides an effective strategy for high-performance fabrication of the thin-film solar cells, demonstrating significant potential for broad applications in cost-effective solar cell usage and mitigating the climate change crisis.

Interface optimization and growth control for high efficiency wide bandgap perovskite solar cells

High-performance wide bandgap perovskite single-junction solar cells (PSCs) are the key elements for the fabrication of high-efficiency tandem solar cells. However, the development of wide bandgap PSCs is currently limited by pernicious interface contact and uncontrolled crystal evolution. In this work, the potassium iodide (KI) additive and solvent annealing method simultaneously are employed to control crystallization kinetics evolution of triple-cation hybrid halide wide bandgap perovskites. The interface is modified with phenethylammonium iodide (PEAI) to form 2D PEAI2PbI4 layer to further enhance the electron collection efficiency and reduce non-radiative recombination caused by the defects trap between the perovskite and electron transport layer. As a result, the photovoltaic performance parameters of the PSCs devices for open-circuit voltage, short-circuit current, and fill factor could be increased from 1.14 V, 14.98 mA cm−2, and 53% to 1.22 V, 17.65 mA cm−2, and 73%, respectively, obtaining the impressive solar cell device with 15.7% power conversion efficiency. The improvement in photovoltaic performance should be attributed to the optimization of crystal evolution and management of interface contact. Therefore, this study provides a promising strategy for fabricating the high-performance wide bandgap PSCs.

18.73% efficiency organic solar cells with a medium bandgap acceptor as a third component

By introducing a third component, a ternary blend film was optimized to enhance the efficiency of organic solar cells with all-around increased photovoltaic performance parameters.

Intrinsic defects at the interface of the FAPbI3/MAPbI3 superlattice: insight from first-principles calculations.

The use of a superlattice structure is an effective strategy to develop novel perovskites and obtain excellent light-absorbing materials. Based on first-principles calculations, we systematically studied the properties of intrinsic point defects at the interface of the FAPbI3/MAPbI3 superlattice. Our calculations show that charged defects are easier to form as compared to neutral ones at the superlattice interface due to low formation energies. Most defects with low formation energies have a shallow level in the band gap, and some deep level defects have high formation energies, so the superlattice perovskite exhibits high defect tolerance. PbI3+ is a dominant and detrimental defect, which acts as a non-radiative recombination center because it has low formation energy and a deep transition level. To avoid the generation of PbI3+ defects, it is suggested to synthesize FAPbI3/MAPbI3 superlattices under I-rich conditions. The calculated light absorption coefficients and photovoltaic performance parameters demonstrate that the presence of defects leads to a certain degree of reduction in light absorption and power conversion efficiency (PCE) of solar cells made of FAPbI3/MAPbI3 superlattices, but the excellent performance of the perovskite solar cell (PSC) is basically retained. The superlattice perovskites are still promising candidates for light-absorbing materials of PSCs. This study is expected to contribute to a better understanding of the properties of defects at the superlattice interface and provide theoretical support for the design of high performance PSCs.

High‐Efficiency Cs‐Based Perovskite‐Silicon Tandem Solar Cells—A Modeling Study

Current studies stipulate that the performance efficiency of photovoltaic cells can be increased by incorporating a tandem architecture into the device configuration. This work includes an assessment of the photovoltaic performance parameters and optimization of the cesium lead iodide (CsPbI3)–silicon (Si) tandem solar cells (TSC) by applying the SCAPS 1D tool. The two terminal (2‐T) monolithic TSC device configuration with a top CsPbI3 perovskite solar cell (PSC) consisting of IGZO as the electron transport layer material (ETL) and CuSbS2 as the hole transport layer material (HTL) and a bottom c‐Si solar cell exhibits a fill factor (FF) and power conversion efficiency (PCE) of 73.16% and 27.07%, respectively, by establishing the current matching condition, while in the four terminal (4‐T) stacked layer configuration, the device exhibits a PCE of 30.68%. The device acquires this high PCE after the optimization of the thickness, dopant density, and defect density of the perovskite light active material and Si.

Enhancement of color and photovoltaic performance of semi-transparent organic solar cell via fine-tuned 1D photonic crystal

Semi-transparent organic solar cells’ (ST-OSCs) photovoltaic and high optical performance parameters are evaluated in innovative applications such as power-generating windows for buildings, automobiles, and aesthetic designs in architectural and industrial products. These parameters require the precision design of structures that optimize optical properties in the visible region and aim to achieve the required photon harvest in UV and IR. These designs can be realized by integrating wavelength-selective photonics-based systems into ST-OSC to increase localized absorption in wavelengths greater than 600 nm and NIR and provide modifiable optical properties. In this study, methodologically, we followed highly detailed light management engineering and transfer matrix method-based theoretical and experimental approaches. We discussed the optimal structures by evaluating color, color rendering index, correlated color temperature, and photovoltaic performances for ST-OSCs, including one-dimensional photonic crystal (1D-PC) designed at different resonance wavelengths (λB) and periods. Finally, by integrating fine-tuned (MgF2/MoO3)N 1D-PC, we report the inherently dark purple-red color of the P3HT:PCBM bulk-heterojunction-based ST-OSC neutralizes with the optimal state was 0.3248 and 0.3733 by adjusting close to the Planckian locus. We also enhanced short current density from 5.77 mA/cm2 to 6.12 mA/cm2 and PCE were increased by 7.34% from 1.77% to 1.90% designed for the N = 4 period and λB = 700 nm.

Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency

Inorganic CdTe and FeSi2-based solar cells have recently drawn a lot of attention because they offer superior thermal stability and good optoelectronic properties compared to conventional solar cells. In this work, a unique alternative technique is presented by using FeSi2 as a secondary absorber layer and In2S3 as the window layer for improving photovoltaic performance parameters. Simulating on SCAPS-1D, the proposed double-absorber (Cu/FTO/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed. The window layer thickness, absorber layer thickness, acceptor density (NA), donor density (ND), defect density (Nt), series resistance (RS), and shunt resistance (Rsh) were simulated in detail for optimization of the above configuration to improve the PV performance. According to this study, 0.5 µm is the optimized thickness for both the CdTe and FeSi2 absorber layers in order to maximize the efficiency (η). Here, the value of the optimum window layer thickness is 50 nm. For using CdTe as a single absorber, η is achieved by 13.26%. However, for using CdTe and FeSi2 as a dual absorber, η is enhanced and the obtaining value is 27.35%. The other parameters are also improved and the resultant value for the fill factor is 83.68%, the open-circuit voltage (Voc) is 0.6566 V, and the short circuit current density (Jsc) is 49.78 mA/cm2. Furthermore, the proposed model performs well at 300 K operating temperature. The addition of the FeSi2 layer to the cell structure has resulted in a significant quantum efficiency enhancement because of the rise in solar spectrum absorption at longer wavelengths (λ). The findings of this work offer a promising approach for producing high-performance and reasonably priced CdTe-based solar cells.

Assessment and performance analysis of roof-mounted crystalline stand-alone photovoltaic (SAPV) system at selected sites in South Africa

BackgroundTechnology is deployed to take the advantage of the ultimate energy from the sun (solar energy) to be used as heat or clean electricity. This energy is classified as “sustainable energy” or “renewable energy” because it requires a short period to naturally replenish the used energy. The application of solar energy involves the conversion of the natural energy resource into a usable form, either as heat or as electricity. The device consists of solar cells made from semiconductor materials, such as silicon, cadmium telluride, gallium arsenide, and so on. Solar potential is both location- and climate-dependent; it is characterised by low energy intensity and intermittency, which limit its application; an improvement in photovoltaic (PV) system performance will facilitate more deployment of the clean electricity system. Therefore, this study provides PV potential and system information required for reliable and optimised solar PV systems at chosen locations. This work uses a 5-stage solar PV system assessment and system performance evaluation utilising Solargis Prospect software. The PV potential and system performance of nine selected site locations in South Africa was conducted using this method. The nine PV site locations are Bloemfontein (Free State), Germiston (Gauteng), Mahikeng (North-West), Mbombela (Mpumalanga), Musgrave (Kwazulu-Natal), Musina (Limpopo), Port Nolloth (Northern Cape), Port Elizabeth (Eastern Cape), and Worcester (Western Cape).ResultThe results of the study were categorised into PV meteorological and system performance parameters as follows. Photovoltaic meteorological parameters—the site in Mahikeng has the highest global horizontal irradiance (GHI), 2156 kWh/m2, and a corresponding specific PV power output (1819.3 kWh/kWp), closely followed by Bloemfontein (2111.5 kWh/m2, 1819.4 kWh/kWp) and Port Nolloth (2003.2 kWh/m2, 1820.5 kWh/kWp). The lowest GHI (1645.1 kWh/m2) and specific PV power output (1436.6 kWh/kWp) were recorded in Musgrave. Photovoltaic system performance parameters—the range of performance ratio (PR) between 75.8 and 77.7% was reported across the nine sites. This ratio met the acceptable benchmark of PR. The highest specific PV power output loss, 118.8 kWh/kWp, was obtained at sites in Bloemfontein, Mahikeng, and Port Nolloth, while the lowest, 93.8 kWh/kWp, was in Musgrave.ConclusionsThe results of the solar PV potential assessment and the evaluation of PV systems performance in the chosen sites across the nine provinces of South Africa show huge PV potential and energy yield. From the results, it was observed that the range of the yearly average of: (1) GHI among the sites is 1645.1–2156 kWh/m2; (2) direct normal irradiation among the sites is 1785.3–2559.3 kWh/m2; (3) diffuse horizontal irradiation among the sites is 512.5–686kWh/m2; (4) global tilted irradiation among the sites is 1849.2–2397.1 kWh/m2; (5) the temperature (TEMP) among the sites is 16–23 °C; (6) specific PV power output (PVOUT specific) among the sites is 1436.6–1820.5 kWh/kWp; (7) total PV power output (PVOUT total) among the sites is 14.366–2397.1 MWh; and (8) the performance ratio among the sites is 75.8–77.7%. Based on the solar resource and performance results of the PV system obtained, the deployment of monocrystalline solar PV technology in all the considered sites across South Africa is technically viable.

18.55% Efficiency Polymer Solar Cells Based on a Small Molecule Acceptor with Alkylthienyl Outer Side Chains and a Low-Cost Polymer Donor PTQ10

18.55% Efficiency Polymer Solar Cells Based on a Small Molecule Acceptor with Alkylthienyl Outer Side Chains and a Low-Cost Polymer Donor PTQ10

Realization of ultra-flat perovskite films with surprisingly large-grain distribution using high-pressure cooking

High-quality perovskite absorber is the basis for obtaining high-performance perovskite solar cells (PSCs). Herein, a novel perovskite film post-treatment method, called high-pressure cooking (HPC) process, was developed to prepare ultra-flat perovskite films, with highly ordered perovskite grains and monolayer structures. The various carrier dynamic characterizations indicated high-quality perovskite grains from HPC treatment contributing to the improvement of transmission speed and collection efficiency of the photogenerated carriers, as well as reducing the defects assisted recombination loss. As a result, the inverted PSC with HPC treatment achieved an excellent PCE of 23.07% with fully optimized photovoltaic performance parameters. Furthermore, fluorescence recovery after photobleaching (FRAP) measurements suggested large grain size by HPC treatment to possess better resistance to halide-ion movement and photochemical decomposition. Among samples, HPC PSC possessed remarkably high light-operation stability at maximum power output coupled with long-term stability when stored in air condition.

Understanding the Effect of the Third Component Ptb7-Th on the Photovoltaic Performance and Key Parameters of Ternary Organic Photovoltaics

Understanding the Effect of the Third Component Ptb7-Th on the Photovoltaic Performance and Key Parameters of Ternary Organic Photovoltaics