Abstract
Current studies stipulate that the performance efficiency of photovoltaic cells can be increased by incorporating a tandem architecture into the device configuration. This work includes an assessment of the photovoltaic performance parameters and optimization of the cesium lead iodide (CsPbI3)–silicon (Si) tandem solar cells (TSC) by applying the SCAPS 1D tool. The two terminal (2‐T) monolithic TSC device configuration with a top CsPbI3 perovskite solar cell (PSC) consisting of IGZO as the electron transport layer material (ETL) and CuSbS2 as the hole transport layer material (HTL) and a bottom c‐Si solar cell exhibits a fill factor (FF) and power conversion efficiency (PCE) of 73.16% and 27.07%, respectively, by establishing the current matching condition, while in the four terminal (4‐T) stacked layer configuration, the device exhibits a PCE of 30.68%. The device acquires this high PCE after the optimization of the thickness, dopant density, and defect density of the perovskite light active material and Si.
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