Photonic Integrated Circuits Research Articles

On-chip source-device-independent quantum random number generator

Quantum resources offer intrinsic randomness that is valuable for applications such as cryptography, scientific simulation, and computing. Silicon-based photonics chips present an excellent platform for the cost-effective deployment of next-generation quantum systems on a large scale, even at room temperature. Nevertheless, the potential susceptibility of these chips to hacker control poses a challenge in ensuring security for on-chip quantum random number generation, which is crucial for enabling extensive utilization of quantum resources. Here, we introduce and implement an on-chip source-device-independent quantum random number generator (SDI-QRNG). The randomness of this generator is achieved through distortion-free on-chip detection of quantum resources, effectively eliminating classical noise interference. The security of the system is ensured by employing on-chip criteria for estimating security entropy in a practical chip environment. By incorporating a photoelectric package, the SDI-QRNG chip achieves a secure bit rate of 146.2 Mbps and a bare chip rate of 248.47 Gbps, with all extracted secure bits successfully passing the randomness test. Our experimental demonstration of this chip-level SDI-QRNG shows significant advantages in practical applications, paving the way for the widespread and cost-effective implementation of room-temperature secure QRNG, which marks a milestone in the field of QRNG chips.

Increase in Modulation Speed of Silicon Photonics Modulator with Quantum-Well Slab Wings: New Insights from a Numerical Study

A Silicon Photonics modulator is a high-speed photonic integrated circuit for optical data transmission in high-capacity optical networks. Silicon Photonics modulators in the configuration of a Mach–Zehnder interferometer, in which a PN-junction rib-waveguide phase shifter is inserted in each arm of the interferometer, are studied in this paper because of their superior performance of high-quality optical data generation in a wide range of spectral bands and their simplicity in fabrication processes suitable to production in foundries. Design, fabrication, and fundamental characteristics of Silicon Photonics Mach–Zehnder modulators are reviewed as an introduction to these high-speed PICs on the Silicon Photonics platform. Modulation speed, or modulation bandwidth, is a key performance item, as well as optical loss, in the application to high-speed optical transmitters. Limiting factors on modulation speed are addressed in equations. Electrical resistance–capacitance coupling, which causes optical modulation bandwidth–optical loss trade-off, is the most challenging limiting factor that limits high-speed modulation. Expansion of modulation bandwidth is not possible without increasing optical loss in the conventional approaches. A new idea including quantum-mechanical effect in the design of Silicon Photonics modulators is proposed and proved in computational analysis to resolve the bandwidth loss trade-off. By adding high-mobility quantum-well overlayers to the side slab wings of the rib-waveguide phase shifter, the modulation bandwidth is doubled without increasing optical loss to achieve a 200 Gbaud modulation rate.

Ultrafast Terahertz Superconductor Van der Waals Metamaterial Photonic Switch

The high‐temperature layered superconductor (HTS) BSCCO is one of the key quantum material platforms in THz science and technology. Compact, stable, and reliable BSCCO THz photonic integrated circuit components can be developed to effectively and efficiently control and manipulate THz wave radiation, especially for future communication systems and network applications. Herein, the design, simulation, and modeling of ultrafast THz metamaterial photonic integrated circuits are reported on a few nanometer‐thick HTS BSCCO van der Waals (vdWs), capable of the active modulation of phase with constant transmission coefficient over a narrow‐frequency range. Meanwhile, the metamaterial circuit works as an amplitude modulator without significantly changing the phase in a different frequency band. Under the application of ultrashort optical pulses, the transient modulation dynamics of the THz metamaterial offer a fast‐switching timescale of 50 ps. The dynamics of picosecond light–matter interaction, Cooper pairs breaking, photoinduced quasiparticles generation and recombination, phonon bottleneck effect, and emission and relaxation of bosons in BSCCO vdW metamaterial arrays are discussed for the potential application of multifunctional superconducting photonic integrated circuits in communication and quantum technologies.

Low-loss silicon waveguide and an ultrahigh-Q silicon microring resonator in the 2 µm wave band.

Silicon photonic-integrated circuits (PICs) operating in the 2 µm wave band are of great interest for spectroscopic sensing, nonlinear optics, and optical communication applications. However, the performance of silicon PICs in this wave band lags far behind the conventional optical communication band (1310/1550 nm). Here we report the realization of a low-loss waveguide and an ultrahigh-Q microring resonator in the 2 µm wave band on a standard 200 mm silicon photonic platform. The single-mode strip waveguide fabricated on a 220 nm-thick silicon device layer has a record-low propagation loss ∼0.2 dB/cm. Based on the low-loss waveguide, we demonstrate an ultrahigh-Q microring resonator with a measured loaded Q-factor as high as 1.1 × 106 and intrinsic Q-factor of 2 × 106, one order of magnitude higher than prior silicon resonators operating in the same wave band. The extinction ratio of the resonator is higher than 22 dB. These high-performance silicon photonic components pave the way for on-chip sensing applications and nonlinear optics in the 2 µm wave band.

Broadband near-infrared emission in silicon waveguides

Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon’s indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

Transport of non-classical light mediated by topological domain walls in a SSH photonic lattice

Advancements in photonics technologies have significantly enhanced their capability to facilitate experiments involving quantum light, even at room temperature. Nevertheless, fully integrating photonic chips that include quantum light sources, effective manipulation and transport of light minimizing losses, and appropriate detection systems remains an ongoing challenge. Topological photonic systems have emerged as promising platforms to protect quantum light properties during propagation, beyond merely preserving light intensity. In this work, we delve into the dynamics of non-classical light traversing a Su-Schrieffer-Heeger photonic lattice with topological domain walls. Our focus centers on how topology influences the quantum properties of light as it moves across the array. By precisely adjusting the spacing between waveguides, we achieve dynamic repositioning and interaction of domain walls, facilitating effective beam-splitting operations. Our findings demonstrate high-fidelity transport of non-classical light across the lattice, replicating known results that are now safeguarded by the topology of the system. This protection is especially beneficial for quantum communication protocols with continuous variable states. Our study enhances the understanding of light dynamics in topological photonic systems and paves the way for high-fidelity, topology-protected quantum communication.

Certified Randomness in Tight Space

Reliable randomness is a core ingredient in algorithms and applications ranging from numerical simulations to statistical sampling and cryptography. The outcomes of measurements on entangled quantum states can violate Bell inequalities, thus guaranteeing their intrinsic randomness. This constitutes the basis for certified randomness generation. However, this certification requires spacelike separated devices, making it unfit for a compact apparatus. Here we provide a general method for certified randomness generation on a small-scale application-ready device and perform an integrated photonic demonstration combining a solid-state emitter and a glass chip. In contrast to most existing certification protocols, which in the absence of spacelike separation are vulnerable to loopholes inherent to realistic devices, the protocol we implement accounts for information leakage and is thus compatible with emerging compact scalable devices. We demonstrate a two-qubit photonic device that achieves the highest standard in randomness, yet is cut out for real-world applications. The full 94.5-h-long stabilized process harnesses a bright and stable single-photon quantum-dot-based source, feeding into a reconfigurable photonic chip, with stability in the milliradian range on the implemented phases and consistent indistinguishability of the entangled photons above 93%. Using the contextuality framework, we certify private randomness generation and achieve a rate compatible with randomness expansion secure against quantum adversaries. Published by the American Physical Society 2024

Lithium niobate on insulator – fundamental opto-electronic properties and photonic device prospects

Abstract Lithium niobate on insulator (LNOI) combines a variety of optoelectronic properties and can meet practical performance requirements that are uncommon in optoelectronic materials. This review introduces the fundamentals and the photonic device concepts that arise from the LNOI materials platform. Firstly, the nonlinear optical response of LNOI is presented, including birefringent phase matching (BPM), modal phase matching (MPM), and quasi-phase matching (QPM). The tunable properties are also introduced, including electro-optical (EO), thermo-optical (TO), and acousto-optical (AO) effects. The structures of nonlinear optical devices, such as ridge waveguides (including periodically polarized inversion waveguides), Mach–Zehnder interferometer (MZI) modulators and micro-resonators (such as disks and rings) are demonstrated. Finally, the future of LNOI devices is discussed. In the already mature and developed optoelectronic material systems, it is rare to find one particular material system supporting so many basic optical components, photonic devices and optoelectronic devices as LNOI does in the field of integrated photonic chips.

On-chip tunable quantum interference in a lithium niobate-on-insulator photonic integrated circuit

Programmable interferometric circuits are at the heart of integrated quantum photonic processors. While the lithium niobate-on-insulator platform has the potential to advance integrated quantum photonics due to its strong nonlinearity and tight mode confinement, the demonstration of reconfigurable two-photon interference has not yet been achieved. Here, we design, fabricate and characterize the building block of such interferometric networks in the form of a 2 × 2 Mach–Zehnder Interferometer. We use a thermo-optic phase shifter to achieve stable performance with a power consumption of Pπ=44.4 mW and sub-microsecond switching times. We demonstrate the effectiveness of our device for quantum applications by measuring single-photon routing with up to 34 dB extinction ratio. We show Hong-Ou-Mandel interference with fully tunable visibilities reaching a maximum value of 97.4±1.0% . As part of large scale quantum photonic circuits, this building block will facilitate reconfigurable and tunable photonic processing units integrated alongside non-classical light sources.

Rewritable Photonic Integrated Circuit Canvas Based on Low-Loss Phase Change Material and Nanosecond Pulsed Lasers.

Programmable photonic integrated circuits (PICs) are an increasingly important platform in optical science and engineering. However, current programmable PICs are mostly formed through subtractive fabrication techniques, which limits the reconfigurability of the device and makes prototyping costly and time-consuming. A rewritable PIC architecture can circumvent these drawbacks, where PICs are repeatedly written and erased on a single PIC canvas. We demonstrate such a rewritable PIC platform by selective laser writing a layer of wide-band-gap phase change material (PCM) Sb2S3 with a low-cost benchtop setup. We show arbitrary patterning with resolution up to 300 nm and write dielectric assisted waveguides with a low optical loss of 0.0172 dB/μm. We envision that using this inexpensive benchtop platform thousands of PIC designs can be written, tested, and erased on the same chip without the need for lithography/etching tools or a nanofabrication facility, thus reducing manufacturing cost and increasing accessibility.

Polarization-resolved near-field characterization of coupling between a bus waveguide and a ring resonator

Light propagation in Photonic integrated circuits (PICs), which can nowadays involve complex systems of light-guiding structures, is measured with different approaches(Nuzhdin et al., 2020, Lončar et al., 2002, Hopman et al., 2007, Morichetti et al., 2014, Sapienza et al., 2012, Vesseur et al., 2007). An interferometric polarization-sensitive measurement of the evanescent fields of these structures provides insight in the performance of the circuit detects possible malfunction with sub-wavelength precision(Engelen et al., 2007, Gersen et al., 2005, Barwick et al., 2009). We demonstrate a Near-field scanning optical microscopy (NSOM) measurement on coupled ring resonators that shows how the guided modes evolve as they propagate across the optical chip. Analysis of the measurements provides information about intensity distribution of the two polarization components (TE and TM) and their spatial confinement. The data validates our methodology and opens new possibilities for analysis of signal propagation in prototyping and optimization of integrated optical systems. Direct observation of polarization state of the guided modes allows for clear understanding of mode conversion in coupling systems.

Integration Of Solution‐Processed BaTiO3 Thin Films with High Pockels Coefficient on Photonic Platforms

AbstractThe heterogeneous integration of ferroelectric BaTiO3 thin films on silicon (Si) and silicon nitride (SiN)‐based platforms for photonic integrated circuits (PICs) plays a crucial role in the development of future nanophotonic thin film modulators. Since the electro‐optic (EO) properties of ferroelectric thin films strongly depend on their crystal phase and texture, the integration of BaTiO3 thin films on these platforms is far from trivial. So far, a conventional integration route using a SrTiO3 template film in combination with high vacuum deposition methods has been developed, but it has a low throughput, is expensive and requires monocrystalline substrates. To close this gap, a cost‐efficient, high‐throughput and scalable method for integrating highly textured BaTiO3 films is needed. Therefore, an alternative method for the integration of highly textured BaTiO3 films using a La2O2CO3 template film in combination with a chemical solution deposition (CSD) process is presented. In this work, the structural and EO properties of the solution‐processed BaTiO3 film are characterized and its integration into an optical ring resonator is evaluated. The BaTiO3 film exhibits a fiber texture, has a large Pockels coefficient (reff) of 139 pm V−1, and integration into a ring resonator‐based modulator shows a VπL of 1.881 V cm and a bandwidth of > 40 GHz. This enables low‐cost, high‐throughput, and flexible integration of BaTiO3 films on PIC platforms and the potential large‐scale fabrication of nanophotonic BaTiO3 thin‐film modulators.

Physics to system-level modeling of silicon-organic-hybrid nanophotonic devices

The continuous growth in data volume has sparked interest in silicon-organic-hybrid (SOH) nanophotonic devices integrated into silicon photonic integrated circuits (PICs). SOH devices offer improved speed and energy efficiency compared to silicon photonics devices. However, a comprehensive and accurate modeling methodology of SOH devices, such as modulators corroborating experimental results, is lacking. While some preliminary modeling approaches for SOH devices exist, their reliance on theoretical and numerical methodologies, along with a lack of compatibility with electronic design automation (EDA), hinders their seamless and rapid integration with silicon PICs. Here, we develop a phenomenological, building-block-based SOH PICs simulation methodology that spans from the physics to the system level, offering high accuracy, comprehensiveness, and EDA-style compatibility. Our model is also readily integrable and scalable, lending itself to the design of large-scale silicon PICs. Our proposed modeling methodology is agnostic and compatible with any photonics-electronics co-simulation software. We validate this methodology by comparing the characteristics of experimentally demonstrated SOH microring modulators (MRMs) and Mach Zehnder modulators with those obtained through simulation, demonstrating its ability to model various modulator topologies. We also show our methodology's ease and speed in modeling large-scale systems. As an illustrative example, we use our methodology to design and study a 3-channel SOH MRM-based wavelength-division (de)multiplexer, a widely used component in various applications, including neuromorphic computing, data center interconnects, communications, sensing, and switching networks. Our modeling approach is also compatible with other materials exhibiting the Pockels and Kerr effects. To our knowledge, this represents the first comprehensive physics-to-system-level EDA-compatible simulation methodology for SOH modulators.

Linearly Polarized Broadband Emission and Multiwavelength Lasing in Solution-Processed Quantum Dots.

A miniature laser with linear polarization is a long sought-after component of photonic integrated circuits. In particular, for multiwavelength polarization lasers, it supports simultaneous access to multiple, widely varying laser wavelengths in a small spatial region, which is of great significance for advancing applications such as optical computing, optical storage, and optical sensing. However, there is a trade-off between the size of small-scale lasers and laser performance, and multiwavelength co-gain of laser media and multicavity micromachining in the process of laser miniaturization remain as significant challenges. Herein, room-temperature linearly polarized multiwavelength lasers in the visible and near-infrared wavelength ranges are demonstrated, by fabricating random cavities scattered with silica in an Er-doped Cs2Ag0.4Na0.6In0.98Bi0.02Cl6 double-perovskite quantum dots gain membrane. By regulating the local symmetry and enabling effective energy transfer in nanocrystals, multiwavelength lasers with ultralow thresholds are achieved at room temperature. The maximum degree of polarization reaches 0.89. With their advantages in terms of miniaturization, ultralow power consumption, and adaptability for integration, these lasers offer a prospective light source for future photonic integrated circuits aimed at high-capacity optical applications.

Single-etched fiber-chip coupler with a metal mirror on a 220-nm silicon-on-insulator platform for perfectly vertical coupling.

Vertical couplers play a pivotal role as essential components supporting interconnections between fibers and photonic integrated circuits (PICs). In this study, we propose and demonstrate a high-performance perfectly vertical coupler based on a three-stage inverse design method, realized through a single full etching process on a 220-nm silicon-on-insulator (SOI) platform with a backside metal mirror. Under surface-normal fiber placement, experimental results indicate a remarkable 3-dB bandwidth of 99 nm with a peak coupling efficiency of -1.44 dB at the wavelength of 1549 nm. This achievement represents the best record to date, to the best of our knowledge, for a perfectly vertical coupler fabricated under similar process conditions.

High-efficiency self-focusing metamaterial grating coupler in silicon nitride with amorphous silicon overlay

Efficient fiber-chip coupling interfaces are critically important for integrated photonics. Since surface gratings diffract optical signals vertically out of the chip, these couplers can be placed anywhere in the circuit allowing for wafer-scale testing. While state-of-the-art grating couplers have been developed for silicon-on-insulator (SOI) waveguides, the moderate index contrast of silicon nitride (SiN) presents an outstanding challenge for implementing efficient surface grating couplers on this platform. Due to the reduced grating strength, a longer structure is required to radiate the light from the chip which produces a diffracted field that is too wide to couple into the fiber. In this work, we present a novel grating coupler architecture for silicon nitride photonic integrated circuits that utilizes an amorphous silicon (α-Si) overlay. The high refractive index of the α-Si overlay breaks the coupler’s vertical symmetry which increases the directionality. We implement subwavelength metamaterial apodization to optimize the overlap of the diffracted field with the optical fiber Gaussian mode profile. Furthermore, the phase of the diffracted beam is engineered to focalize the field into an SMF-28 optical fiber placed 55 µm above the surface of the chip. The coupler was designed using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations supported by genetic algorithm optimization. Our grating coupler has a footprint of 26.8 × 32.7 µm2 and operates in the O-band centered at 1.31 μm. It achieves a high directionality of 85% and a field overlap of 90% with a target fiber mode size of 9.2 µm at the focal plane. Our simulations predict a peak coupling efficiency of − 1.3 dB with a 1-dB bandwidth of 31 nm. The α-Si/SiN grating architecture presented in this work enables the development of compact and efficient optical interfaces for SiN integrated photonics circuits with applications including optical communications, sensing, and quantum photonics.

A programmable topological photonic chip

Controlling topological phases of light allows the observation of abundant topological phenomena and the development of robust photonic devices. The prospect of more sophisticated control with topological photonic devices for practical implementations requires high-level programmability. Here we demonstrate a fully programmable topological photonic chip with large-scale integration of silicon photonic nanocircuits and microresonators. Photonic artificial atoms and their interactions in our compound system can be individually addressed and controlled, allowing the arbitrary adjustment of structural parameters and geometrical configurations for the observation of dynamic topological phase transitions and diverse photonic topological insulators. Individual programming of artificial atoms on the generic chip enables the comprehensive statistical characterization of topological robustness against relatively weak disorders, and counterintuitive topological Anderson phase transitions induced by strong disorders. This generic topological photonic chip can be rapidly reprogrammed to implement multifunctionalities, providing a flexible and versatile platform for applications across fundamental science and topological technologies.

Compact mode converters in thin-film lithium niobate integrated platforms.

Mode converters, crucial elements within photonic integrated circuits (PICs) designed for multimode optical transmission and switching systems, present a challenge due to their bulky structures in thin-film lithium niobate (TFLN) integrated platforms, which are incompatible with the compact and efficient nature desired for dense PICs. In this work, we propose TE1-TE0, TE2-TE0, and TE3-TE0 mode converters in shallowly etched TFLN, within small footprints. The experimental results show that the insertion loss is 0.4 dB, 0.6 dB, and 0.5 dB for the compact TE1-TE0, TE2-TE0, and TE3-TE0 mode converters, respectively, and these devices can be operated within a wide 1 dB bandwidth (BW) over 100 nm. This work facilitates the development of low-loss, broadband, and compact monolithically integrated photonic devices for future multimode communication networks in TFLN integrated platforms.

Multiplexed detection of food contaminants with a portable reader based on all-in-one monolithic photonic chips

Silicon chips that monolithically integrate ten Mach-Zehnder interferometers (MZIs), their respective broad-band optical sources, and spectral analyzers, as well as photodiode arrays that record the spectrally-resolved output signals of the ten MZIs, are exploited for the multiplexed immunochemical determination of allergens and mycotoxins. The monolithically integrated light sources emit light in the visible/infrared spectrum (530–950 nm), and thus the detection based on broad-band Mach-Zehnder interferometry provided information about changes in the refractive index on the transducer surface due to binding reactions across the entire spectrum, surpassing the limitations of traditional monochromatic interferometry. The assays were run using a portable automated reader incorporating the chip fluidic and electronic interfacing, a micropump for continuous fluid delivery, and control electronics combined with a software for real-time signal monitoring. The photonic chips and portable reader were applied for allergen detection in dairy industry rinsing waters and mycotoxin detection in beer samples. All analytes were determined through competitive immunoassays. For the multiplexed detection of three allergens (bovine κ-casein, peanut protein, and gliadin), the respective proteins were immobilized onto the sensing windows of different MZIs on a single chip. For the detection of mycotoxins (fumonisin B1 and deoxynivalenol), the respective mycotoxin-protein conjugates were employed. In all cases, the reaction with mixtures of calibrators/samples and analyte-specific antibodies was followed by a reaction with appropriate secondary antibodies to enhance the signal and reduce the assay duration. The allergen assays were completed in 10 min with detection limits of 0.01, 0.25, and 0.05 μg/mL for κ-casein, peanut protein, and gliadin, respectively. The mycotoxin assays took 15 min with detection limits of 2.0 and 10 ng/mL for fumonisin B1 and deoxynivalenol, respectively, in beer samples. The results demonstrate the potential of the developed solution for the rapid and sensitive on-site multiplexed detection of targeted analytes.

Electrically empowered microcomb laser

Optical microcomb underpins a wide range of applications from communication, metrology, to sensing. Although extensively explored in recent years, challenges remain in key aspects of microcomb such as complex soliton initialization, low power efficiency, and limited comb reconfigurability. Here we present an on-chip microcomb laser to address these key challenges. Realized with integration between III and V gain chip and a thin-film lithium niobate (TFLN) photonic integrated circuit (PIC), the laser directly emits mode-locked microcomb on demand with robust turnkey operation inherently built in, with individual comb linewidth down to 600 Hz, whole-comb frequency tuning rate exceeding 2.4 × 1017 Hz/s, and 100% utilization of optical power fully contributing to comb generation. The demonstrated approach unifies architecture and operation simplicity, electro-optic reconfigurability, high-speed tunability, and multifunctional capability enabled by TFLN PIC, opening up a great avenue towards on-demand generation of mode-locked microcomb that is of great potential for broad applications.