In this study, the performance of a-Si:H/μc-Si:H tandem solar cells was comprehensively assessed through two-dimensional numerical simulations. Our work involved optimizing the layer thicknesses and exploring advanced light-trapping techniques to enhance photogenerated current in both sub-cells. To reduce surface reflections on the top cell, we proposed a two-layer antireflection coating, composed of SiO2/Si3N4. Additionally, we implemented a 1D photonic crystal as a broadband back reflector within the solar cell. In order to balance the current density between the sub-cells and prevent carrier accumulation at the interface, we introduced a tunnel recombination junction (TRJ). This TRJ consisted of n-μc-Si:H/p-μc-Si:H layers with a thickness of 10 nm. Under global AM 1.5G conditions, our proposed cell structure exhibited impressive electrical characteristics, including an open-circuit voltage of 1.38 V, a short-circuit current density of 12.51 mA/cm2, and a fill factor of 80.82%. These attributes culminated in a remarkable total area conversion efficiency of 14%.
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