Compositional fluctuations of N in Ga <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{0.68}$</tex></formula> In <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{0.32}$</tex></formula> N <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{x}$</tex></formula> As <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{1-x}$</tex></formula> result in quantum dot (QD)-like fluctuations in the conduction band edge (CBE). The influence of these compositional fluctuations on the performance of Ga <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{0.68}$</tex></formula> In <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{0.32}$</tex> </formula> N <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{x}$</tex></formula> As <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$_{1-x}$</tex> </formula> /GaAs quantum well (QW) lasers has been studied using a rate equation approach. Adding N into InGaAs has been observed to reduce the photon luminescence (PL) intensity, broaden the line width, and increase the laser threshold. For low N composition (N ≈ 1%), due to the small density of QD-like fluctuations, the electron density within the fluctuations is below the lasing threshold and they act as defect-related nonradiative centers. However, as N increases (N ≥ 2%), the density of the QD-like fluctuations increases allowing lasing to occur from the QD-like fluctuations. The dynamics of the electrons and photons in both the 2-D QW and the QD-like fluctuations are evaluated. In addition, by adding the gain of the QD-like fluctuations and the QW confined level gain, a broad-band material gain results can be exploited in tuneable lasers.