Photon Emission Mechanism Research Articles

Emission Mechanism and Bias-Dependent Emission Efficiency of Photons Induced by Drain Avalanche in Si MOSFET's

Emission mechanism of photons induced by the drain avalanche in Si MOSFET's is discussed by analyzing the emission efficiency (defined by the ratio of the generated photon number to the avalanche-induced carrier number) dependence upon gate and drain voltages, which are found by both photomultiplier measurements and electrical measurements. The dependence are analyzed by using two-dimensional process-device simulator from the point of view of the bias dependence of Iateral (E/sub L/) and vertical (E/sub V/ ) electric fields in the channel near the drain. From the analysis, it is found that the bias dependence of emission efficiency can be explained by considering two-dimensional coexistence change of the avalanche-induced electrons and holes. It is concluded that the emission mechanism is the recombination of the avalanche-induced electrons and holes.

On the mechanism of photon emission from thin film tunnel structures

The light emission from Al−Al2O3−M planar tunnel diodes was investigated where M=Ag, Au or Cu. Experiments on smooth and periodically corrugated (holographic grating) substrates showed that the emitted light originates from surface plasmons scattered by the surface roughness and, probably, from the bremsstrahlung of tunneling electrons. All the three noble metals show qualitatively similar behaviour and their light emission can be described as the superposition of three independent sources. The quantum efficiency of radiation was found to be ≈10−5 photon/electron, close to the theoretical limit.

Mechanism of proportional scintillation in argon, krypton and xenon

The mechanism of photon emission in the rare-gas proportional scintillation counter is ascribed to the radiative de-excitation of excited molecules, R 2 ∗→R+R+hv , by determining emission spectra experimentally.