To improve the performance of the charge induce layer in a photon counting imaging detector and to enhance the imaging quality of the photon counting imaging system, different thickness Ge films were deposited by Radio Frequency (RF) magnetron sputtering and Direct Current (DC) magnetron sputtering, respectively. The X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), surface profiler, and the four-point probe surface resistance tester were used to analyze and characterize properties of the films deposited by two methods mentioned above. Research shows that both the Ge films are amorphous structures, and the Ge film prepared by DC is sparser than that prepared by RF, and the resistivities of Ge films with different thicknesses prepared by DC are greater than that of the films deposited by RF. The experiment indicates that the thicker the film, the more stable the electrical properties. Imaging performance of the detector with the Ge film on different sheet resistances is compared experimentally, and it shows that the imaging performance is not only excellent, but also stable within hundreds of M/, but when the sheet resistance is higher than 2 G/, the resolution of the system will be reduced.