Photon-assisted Tunneling Research Articles

Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement

We reported transport diagrams of self-assembled germanium (Ge) double quantum-dots (DQDs) using direct current measurement under illumination at wavelength (λ) of 850 nm and at the base temperature of 4.5 K. Ge DQDs with a coupling-barrier of Si, tunneling-barriers of Si3N4, and self-aligned p+-Si reservoirs were fabricated in a self-organized CMOS approach. Charge transport through the Ge-DQDs is facilitated by photon-assisted tunneling. Characteristic gate-controlled hexagonal-shaped cells over a wide range of hole occupancy are acquired thanks to hard-wall confinement. Large dimensions (ΔVG > 200 mV) of hexagonal-shaped cells are favored for the operation of charge states, indicating that our Ge DQDs system is less susceptible to shot noises arising from external voltage sources. Estimated intra-QD and inter-QD charging energies are EC,R/EC,L = 48.9 meV/42.7 meV and ECm = 7.8 meV, respectively.

Photon-assisted tunnel rectenna for solar energy harvesting

In this work, we introduce a solar rectenna that is combined with a periodic subwavelength spiral antenna and a metal-oxide-semiconductor photon-assisted tunneling diode. We obtain spectral absorption and electromagnetic field distributions by numerical simulations and calculate the tunneling current densities generated by solar rectenna. The results indicate that broadband absorption with a peak value over 0.99 is achieved in the range of 400-2500 nm. Additionally, the figure of merit for tunneling electric field enhancement reaches over 104. Under AM1.5 solar irradiation, the calculated zero-bias tunneling current densities are up to 13.93 mA/cm2. This study is expected to advance the development of ultra-high frequency rectennas and pave the way for efficient solar energy harvesting.

A semi-classical Floquet-NEGF approach to model photon-assisted tunneling in quantum well devices

A semi-classical Floquet-NEGF approach to model photon-assisted tunneling in quantum well devices

Photon-assisted destructive interference through a parallel-coupled double quantum dots

In this paper, we establish a model to realize the photon-assisted destructive interference phenomena, the model consisting of parallel-coupled double quantum dots and Luttinger liquid leads. By applying the canonical transformation and the nonequilibrium Green’s function technique, the general time-dependent current formula is developed. The joint effects of the intralead Coulomb interaction and an external ac field on the quantum interference are investigated. For weak intralead interactions, besides the usual photon-assisted tunneling resonance, there are two types of photon-assisted tunneling destructive interference: one is related to interdot coupling and the other to intralead interactions. For moderately strong intralead interaction, the photon-assisted sidebands are suppressed and the differential conductance scales as a power law in bias voltage. In particular, we show the multiphoton absorption and emission up to four photons in an electron tunneling process. We believe that the photo-assisted destructive interference results obtained in this paper are instructive for future experiments.

Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet—Andreev states

Light–matter coupling allows control and engineering of complex quantum states. Here we investigate a hybrid superconducting–semiconducting Josephson junction subject to microwave irradiation by means of tunnelling spectroscopy of the Andreev bound state spectrum and measurements of the current–phase relation. For increasing microwave power, discrete levels in the tunnelling conductance develop into a series of equally spaced replicas, while the current–phase relation changes amplitude and skewness, and develops dips. Quantitative analysis of our results indicates that conductance replicas originate from photon assisted tunnelling of quasiparticles into Andreev bound states through the tunnelling barrier. Despite strong qualitative similarities with proposed signatures of Floquet–Andreev states, our study rules out this scenario. The distortion of the current–phase relation is explained by the interaction of Andreev bound states with microwave photons, including a non-equilibrium Andreev bound state occupation. The techniques outlined here establish a baseline to study light–matter coupling in hybrid nanostructures and distinguish photon assisted tunnelling from Floquet–Andreev states in mesoscopic devices.

Electron transport properties through a benzene-type quantum dots molecular system

A benzene-type quantum dots molecular model is designed, and the conductance and time-average current through the system are obtained using the Green's function. The results show that one single resonance peak changes to three resonance peaks with increasing the inter-dot coupling strength. The intensities of the twin peaks in the conductance spectrum are sensitive to the dot-lead coupling strength. An anti-resonance band emerges in the conductance spectrum as the dot-lead coupling strength is strong enough. When an external magnetic field is introduced, the original three conductance resonance peaks evolves into six resonance peaks and meanwhile two anti-resonance bands occur. The widths of the new anti-resonance bands can be tuned by adjusting the magnetic flux. Moreover, a photon-assisted tunneling phenomenon can be observed when the system is irradiated by a time-dependent external field. These results provide insights into the design and development of efficient molecular electronics.

Microwave-Assisted Thermoelectricity in S - I - S′ Tunnel Junctions

Asymmetric superconducting tunnel junctions with gaps ${\mathrm{\ensuremath{\Delta}}}_{1}>{\mathrm{\ensuremath{\Delta}}}_{2}$ have been proven to show a peculiar nonlinear bipolar thermoelectric effect. This arises due to the spontaneous breaking of electron-hole symmetry in the system, and it is maximized at the matching-peak bias $|V|={V}_{p}=({\mathrm{\ensuremath{\Delta}}}_{1}\ensuremath{-}{\mathrm{\ensuremath{\Delta}}}_{2})/e$. In this paper, we investigate the interplay of photon-assisted tunneling (PAT) and bipolar thermoelectric generation. In particular, we show how thermoelectricity, at the matching peak, is supported by photon absorption and emission processes at the frequency-shifted sidebands $V=\ifmmode\pm\else\textpm\fi{}{V}_{p}+n\ensuremath{\hbar}\ensuremath{\omega}$, $n\ensuremath{\in}\mathbb{Z}$. This represents a sort of microwave-assisted thermoelectricity. We show the existence of multiple stable solutions, being associated with different photon sidebands, when a load is connected to the junction. Finally, we discuss how the nonlinear cooling effects are modified by the PAT. The proposed device can detect millimeter-wavelength signals by converting a temperature gradient into a thermoelectric current or voltage.

Energetics of Microwaves Probed by Double Quantum Dot Absorption.

We explore the energetics of microwaves interacting with a double quantum dot photodiode and show wave-particle aspects in photon-assisted tunneling. The experiments show that the single-photon energy sets the relevant absorption energy in a weak-drive limit, which contrasts the strong-drive limit where the wave amplitude determines the relevant-energy scale and opens up microwave-induced bias triangles. The threshold condition between these two regimes is set by the fine-structure constant of the system. The energetics are determined here with the detuning conditions of the double dot system and stopping-potential measurements that constitute a microwave version of the photoelectric effect.

Role of optical rectification in photon-assisted tunneling current

Emission of light and conversely rectification of an optical signal using an all-metallic electronic device is of fundamental and technological importance for nano-optics. However despite recent experimental efforts in the development of electrically-driven plasmonic sources, the interplay between quantum transport and optics is still under debate. Here, we measure the photon-assisted current in a planar tunnel junction under infrared illumination. To address the microscopic mechanism at the origin of the optical rectification, we compare the photon-assisted current and the current-voltage characteristic of the junction measured on a voltage range much greater than {V}_{0}=frac{hc}{elambda }=0.825,{{{{{{{rm{V}}}}}}}}, previously unexplored. The experimental results do not agree with the theory based on the existence of a non-thermal distribution function corresponding to the exchange of energy quanta between electrons and photons. We show instead that the illumination power mainly goes into heating and that the rectification results from the tunneling Seebeck effect.

Initial experimental results on a superconducting-qubit reset based on photon-assisted quasiparticle tunneling

We present here our recent results on qubit reset scheme based on a quantum-circuit refrigerator (QCR). In particular, we use the photon-assisted quasiparticle tunneling through a superconductor–insulator–normal-metal–insulator–superconductor junction to controllably decrease the energy relaxation time of the qubit during the QCR operation. In our experiment, we use a transmon qubit with dispersive readout. The QCR is capacitively coupled to the qubit through its normal-metal island. We employ rapid, square-shaped QCR control voltage pulses with durations in the range of 2–350 ns and a variety of amplitudes to optimize the reset time and fidelity. Consequently, we reach a qubit ground-state probability of roughly 97% with 80-ns pulses starting from the first excited state. The qubit state probability is extracted from averaged readout signal, where the calibration is based on Rabi oscillations, thus not distinguishing the residual thermal population of the qubit.

Optical phased array with on-chip phase calibration.

Optical phased arrays (OPAs) with phase-monitoring and phase-control capabilities are necessary for robust and accurate beamforming applications. This paper demonstrates an on-chip integrated phase calibration system where compact phase interrogator structures and readout photodiodes are implemented within the OPA architecture. This enables phase-error correction for high-fidelity beam-steering with linear complexity calibration. A 32-channel OPA with 2.5-µm pitch is fabricated in an Si-SiN photonic stack. The readout is done with silicon photon-assisted tunneling detectors (PATDs) for sub-bandgap light detection with no-process change. After the model-based calibration procedure, the beam emitted by the OPA exhibits a sidelobe suppression ratio (SLSR) of -11 dB and a beam divergence of 0.97° × 0.58° at 1.55-µm input wavelength. Wavelength-dependent calibration and tuning are also performed, allowing full 2D beam steering and arbitrary pattern generation with a low complexity algorithm.

Integer and Fractional Floquet Resonances in a Driven Three-Well System

We investigate Floquet dynamics of a particle held in a three-well system driven by a two-frequency field and identify integer and fractional photon resonances due to the dual-frequency driving. It is found that pairs of photon-assisted tunneling near the resonance originate from avoided level crossings in the Floquet spectra which, in essence, are quantum features of the hybridization between different quantum states. In particular, we establish a close connection between fractional-order resonances and Floquet mode properties under two-frequency driving conditions and illustrate their dependence on driving parameters. These results provide us a possibility to realize coherent control of quantum states with the assistance of classical external driving fields.

Master equation approach for transport through Majorana zero modes

Based on an exact formulation, we present a master equation approach to transport through Majorana zero modes (MZMs). Within the master equation treatment, the occupation dynamics of the regular fermion associated with the MZMs holds a quite different picture from the Bogoliubov–de Gennes (BdG) S-matrix scattering process, in which the ‘positive’ and ‘negative’ energy states are employed, while the master equation treatment does not involve them at all. Via careful analysis for the structure of the rates and the rate processes governed by the master equation, we reveal the intrinsic connection between both approaches. This connection enables us to better understand the confusing issue of teleportation when the Majorana coupling vanishes. We illustrate the behaviors of transient rates, occupation dynamics and currents. Through the bias voltage dependence, we also show the Markovian condition for the rates, which can extremely simplify the applications in practice. As future perspective, the master equation approach developed in this work can be applied to study important time-dependent phenomena such as photon-assisted tunneling through the MZMs and modulation effect of the Majorana coupling energy.

Quantized current steps due to the a.c. coherent quantum phase-slip effect.

The a.c. Josephson effect predicted in 19621 and observed experimentally in 19632 as quantized 'voltage steps' (the Shapiro steps) from photon-assisted tunnelling of Cooper pairs is among the most fundamental phenomena of quantum mechanics and is vital for metrological quantum voltage standards. The physically dual effect, the a.c. coherent quantum phase slip (CQPS), photon-assisted tunnelling of magnetic fluxes through a superconducting nanowire, is envisaged to reveal itself as quantized 'current steps'3,4. The basic physical significance of the a.c. CQPS is also complemented by practical importance in future current standards, a missing element for closing the quantum metrology triangle5,6. In 2012, the CQPS was demonstrated as superposition of magnetic flux quanta in superconducting nanowires 7. However, the direct flat current steps in superconductors, the only unavailable basic effect of superconductivity to date, was unattainable due to lack of appropriate materials and challenges in circuit engineering. Here we report the direct observation of the dual Shapiro steps in a superconducting nanowire. The sharp steps are clear up to 26 GHz frequency with current values 8.3 nA and limited by the present set-up bandwidth. The current steps were theoretically predicted in small Josephson junctions 30 years ago5. However, unavoidable broadening in Josephson junctions prevents their direct experimental observation8,9. We solve this problem by placing a thin NbN nanowire in an inductive environment.

2D Material-Enabled Optical Rectennas with Ultrastrong Light-Electron Coupling.

Optical rectennas extend the electromagnetic wave rectification process into the visible regime and provide a route toward high-performance photodetection and energy harvesting. Here, the promise of 2D materials toward on-chip optical rectennas is demonstrated. A self-aligned patterning process yields lateral MIM structures where a nanometer-sized air gap separates a 2D material contact from a metal electrode. This device can be scalably produced in large arrays using established microfabrication techniques. Different from previous approaches, the performance of the 2D rectenna can be adjusted through electrostatic gating. Optimization of the band alignment leads to strong rectification at wavelengths around 500nm and clear polarization control. Comparison of wavelength-dependent rectenna performance with a photon-assisted tunneling model reveals a tenfold increase in photon-electron coupling over nanotube-based rectennas. The results highlight the potential of 2D material-based rectennas for future quantum computing applications.

Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions.

Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin of the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, n, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge, ne, transferred by the nth-order tunneling process. The measurements suggest PAT as a powerful method for assigning the origin of low-energy spectral features in hybrid Josephson devices.

Spin polarization transport through a four InAs quantum dots system irradiated by terahertz light field

We design a four InAs quantum dot system in which two leads are irradiated by terahertz light fields. The average current through the system is obtained by means of non-equilibrium Green's function theory. Typical photon-assisted tunneling is observed in the current energy spectrum. 100% polarization can be achieved by adjusting the intensity of Zeeman magnetic field or the amplitude of terahertz light field. As the frequency of terahertz light field is invariant, a zero current can be obtained by adjusting the amplitude of the terahertz light field, indicating an optically controlled quantum switch device. The spin polarization can be converted between 0 and 1 by tuning the energy level of quantum dots, suggesting a physical scheme of a polarization pulse device. Moreover, the system can be constructed as a terahertz detector due to the oscillation properties of spin polarization. The present work sheds lights onto the design of quantum computing and spin-dependent quantum devices.

Microwave-Frequency Scanning Gate Microscopy of a Si/SiGe Double Quantum Dot.

Conventional transport methods provide quantitative information on spin, orbital, and valley states in quantum dots but lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution at the expense of speed. Working to combine the spatial resolution and energy sensitivity of scanning probe microscopy with the speed of microwave measurements, we couple a metallic tip to a Si/SiGe double quantum dot (DQD) that is integrated with a charge detector. We first demonstrate that the dc-biased tip can be used to change the occupancy of the DQD. We then apply microwaves through the tip to drive photon-assisted tunneling (PAT). We infer the DQD level diagram from the frequency and detuning dependence of the tunneling resonances. These measurements allow the resolution of ∼65 μeV excited states, an energy consistent with valley splittings in Si/SiGe. This work demonstrates the feasibility of scanning gate experiments with Si/SiGe devices.

Modulation Characteristics of High-Speed Transistor Lasers

The spontaneous emission recombination lifetime of carriers in the active region of transistor lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base region under the collector bias. Thus, it has the potential for use as a high-speed optical fiber communication light source. The unique three-electrode structure of TL notably enriches the modulation methods of the light source. As an important parameter to measure the data transfer rate, the modulation bandwidth of TL has been studied extensively. This paper briefly analyzes the inherent characteristics and advantages of TL and then discusses the progress in the research on TL modulation characteristics. Currently, the common methods to increase the modulation rate include optimizing the device structure, intracavity photon-assisted tunneling, and adding external auxiliary circuits. Through these techniques, single quantum well GaAs- based TL can achieve error-free transmission of 22 Gb/s, and simulation data show that for InP- based TL, this can reach 40 Gb/s. Finally, the challenges faced by TL in the area of optical fiber communication are elucidated.

Anomalous photon-assisted tunneling in periodically driven Majorana nanowires and BCS charge measurement

The photon-assisted tunneling of Majorana bound states in a Majorana nanowire driven by the periodic field is studied both theoretically and numerically. We find that Majorana bound states exhibit an anomalous photon-assisted tunneling signal, which is different from an ordinary fermionic state: the height of photonic sidebands is related to the degree of Majorana nonlocality. Moreover, we show that the Bardeen---Cooper---Schrieffer (BCS) charge and spin components of subgap states can be well revealed by the local conductance. Our work illuminates the effect of driving field on Majorana bound states and provides a systematic scheme to directly measure BCS information of overlapping Majorana bound states.