Photoluminescence Intensity Research Articles

A ‘Turn-on’ fluorogenic probe for selective and specific detection of Hg(II) ions

Mercury (Hg2+) and its associated compounds have drawn serious concern from the scientific communities for their extreme toxicity to human beings. The present article introduced a chromone-benzoxazole embracing an effective fluorogenic probe, (E)-3-(((4-(benzo[d]oxazol-2-yl) phenyl) imino) methyl)-2-methoxy-2H-chromen-4-ol (BPMC) for selective and specific detection of Hg2+ ions having detection and quantification limit in the µM range. A significant photoluminescence enhancement has been observed from BPMC solution (water-DMSO mixture, 50 % v/v) displaying low to highly intense blue-violet photoluminescence under a 365 nm UV lamp due to the inhibition of intramolecular charge transfer (ICT) and excited state intramolecular proton transfer (ESIPT) processes involved in BPMC. Furthermore, to achieve on-site detection of Hg2+ ions and investigate the practical utility of our developed probe, we have fabricated a BPMC-stained paper-strips-based test kit and demonstrated its practical effectiveness for on-spot detection. The details of the detection mechanism have been revealed through 1H NMR, FT-IR, and high-resolution mass spectrometric analysis. The present report evokes a broader perspective for tailoring ICT and ESIPT-based chromo-fluorogenic probes to accelerate their real-world application and environmental monitoring.

Observation of voltage dependent negative differential resistance (NDR) in SnS2-GO nanocomposites

This study investigates the structural, optical, and electrical properties of tin disulfide (SnS2) and SnS2-graphene oxide (GO) nanosheets synthesized via chemical bath deposition method (CBD). Structural characterization confirms the formation of hexagonal crystal phases with nanosheet morphology. It shows a well distribution of nanosheet average square sizes of 10 nm for SnS2 and 6 nm for SnS2-GO. Optical analysis shows blue shifts in absorption edges compared to bulk SnS2, attributed to quantum confinement effects. Photoluminescence emission peaks exhibit different energy levels in SnS2-GO originated to native defects. The composites show a sharp reduced of PL intensity due to enhanced charge carrier separation. Electrical measurements on SnS2-GO thin films demonstrate negative differential resistance (NDR) behavior in both planar and sandwich contact configurations, suggesting electron injection/extraction mechanisms. The NDR phenomenon exhibits a dependence on voltage scan rate, indicating the involvement of electronic and ionic elements in charge transport mechanisms. Overall, this study provides insights into the NDR properties of SnS2-GO nanocomposite, laying the groundwork for their potential applications in optoelectronics and nanoelectronics.

Optical characteristics, Judd-Ofelt analysis of enhanced luminescence by flux in thermally stable, novel Eu3+- doped BaZr(PO4)2 phosphor for indoor lighting applications

A series of novel single phased Eu3+ doped BaZr(PO4)2 phosphor were synthesized employing simple solid-state reaction route and studied the influence of different chlorides as fluxes (NH4Cl, KCl, LiCl and NaCl) on structural and photoluminescence properties. The structural characterization reveals pure phase formation of the as prepared phosphors with monoclinic crystal structure. The photoluminescence (PL) spectra recorded under 392 nm excitation depicts intense emission at 612 nm. Further, the concentration of Eu3+ ion was well tuned by carefully studying the PL spectra and the optimised amount of Eu3+ ion in BaZr(PO4)2 is found to be 3.0 mol%. The luminescence properties of phosphor with added aforementioned fluxes were also studied in detail. NH4Cl was found to be the best among all the fluxes taken and the photoluminescence intensity of phosphor gets enhanced by 1.43 times of without flux. The Judd-Ofelt theory was employed for determination of spectral parameters from photoluminescent emission spectra. The temperature dependent photoluminescent studies establishes stability of phosphor emission at operating temperatures. The CIE coordinates were evaluated that confirms the pure red emission under n-UV excitation. All the studies indicate the potential of the said phosphor in phosphor converted white light emitting diodes as red emitter and indoor lighting.

Bioinspired ultrathin photonic color convertors for highly efficient micro‐light‐emitting diodes

AbstractPixelated color convertor plays an immensely important role in next‐generation display technologies. However, the inherent randomness of light propagation within the convertor presents a formidable challenge to reconcile the huge contradiction between excitation and outcoupling. Here, we demonstrate a bioinspired photonic waveguide pixelated color convertor (BPW‐PCC) to realize directional excitation and outcoupling, which is inspired by an insect visual system. The lens array of BPW‐PCC enables a focusing photonic waveguide that guides the excitation light and converges it on colloidal quantum dots; the directional channel provides a splitting photonic waveguide to enhance the outcoupling of photoluminescence light. Consequently, the excitation and outcoupling efficiency can be simultaneously improved at this judiciously designed pixelated color convertor with a thickness of 50 μm. By this strategy, ultrathin BPW‐PCCs with 4.4‐fold enhanced photoluminescence intensity have been demonstrated in micro‐light‐emitting diode devices and achieved a record‐high luminous efficacy of 1600 lm W−1 mm−1, opening a new avenue for efficient miniaturized displays.

Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures.

The growth interruption technology is introduced to the growth of GaAsP/InAlGaAs quantum well (QW) structure using metal-organic chemical vapor deposition (MOCVD). The effect of growth interruption time (GIT) on the crystalline quality and optical properties are investigated. The two distinctive emission peaks are the transition recombination between the electron level of conduction band and the light and heavy hole level of valence band in the photoluminescence (PL) at room temperature. The PL peaks present a redshift and merge together with the increasing GIT, which is attributed to the QW energy level shift caused by the increase in arsenic concentrations in GaAsP QW, the diversified thickness of QW and the variations of indium components in the InAlGaAs barrier layer. The Gaussian deconvolution parameters in temperature-dependent PL (TDPL) show that the GaAsP/InAlGaAs QW with a GIT of 6 s has a 565.74 meV activation energy, enhancing the carrier confinement in QW and the PL intensity, while the 6 s-GIT GaAsP QW has the increasing interface roughness and the non-radiative centers at the InGaAsP intermediate layer, leading to a spectral broadening. The QW with 10 s-GIT exhibits a small full width at half maximum (FWHM) with the various temperature, indicating reduced interface roughness and excellent crystal quality. An increase in GIT may be suitable for optimizing the optical properties of GaAsP/InAlGaAs QW.

CsPbBr3 perovskite quantum dots by mesoporous silica encapsulated for enhancing water and thermal stability via high temperature solid state method

All inorganic perovskite quantum dots (PQDs) have great application prospects in the lighting and display fields due to their excellent photoelectric properties. However, their instabilities in water and high temperature lead to photoluminescence (PL) quenching, and colloidal synthesis methods usually use a mass of organic solvents, limiting their practical application. Herein, we successfully synthesized mesoporous silica (m-SiO2) and employed a confinement effect to successfully synthesize CsPbBr3@m-SiO2 powders using a simple high-temperature solid-phase synthesis method in an air atmosphere. When the m-SiO2 content is 0.2 g, optimal green luminous intensity is achieved with a peak wavelength of 522 nm and a full width at half maximum (FWHM) of 23 nm. CsPbBr3@m-SiO2 powders have excellent thermal stability, the PL spectral shapes do not change and the PL intensity can maintain 88.1 % of the original level after 10 heating cycles (200 °C). In addition, CsPbBr3@m-SiO2 powders exhibit excellent water stability, which can still be well dispersed after 30 days exposure to water, and the PL strength remain basically unchanged. This study presents a novel approach for the advancement of stable perovskite luminescent materials.

Amino‐Arsine and Amino‐Phosphine Based Synthesis of InAs@InP@ZnSe core@shell@shell Quantum Dots

AbstractA colloidal synthesis protocol is demonstrated for InAs@InP core@shell quantum dots (QDs) with a tunable InP shell thickness (ranging from 3 to 8 monolayers), utilizing tris(diethylamino)‐arsine and ‐phosphine. Structural analysis reveals that the InP shell preferentially grows onto the tetrahedral InAs cores along the <‐1‐1‐1> directions, forming tetrapodal‐shaped InAs@InP QDs. Growth of the InP shell causes a red shift in the absorption spectrum of the QDs. This is explained by considering that electrons are delocalized throughout the whole core@shell QDs, while holes preferentially leak along the <‐1‐1‐1> directions, as indicated by the density functional theory calculations. This means such heterostructures cannot be described as type‐I or quasi type‐II, contrary to earlier assumptions. The overlap of carrier wavefunctions throughout the entire InAs@InP QD structure results in no significant reduction of the Auger recombination rate, which remains as fast as in InAs QDs. However, the InP shell enhances photoluminescence (PL) efficiency (up to ≈13%) by passivating surface trap states of the InAs QDs (mainly located close to the top of the valence band). The overgrowth of a ZnSe shell endows the QDs with a high PL efficiency (≈55%) and good stability upon air exposure (≈80% PL intensity retention after 14 days).

Synthesis and photoluminescence properties of Ce3+/Tb3+ and Eu3+ ions doped GdB3O6/Ca10(PO4)6(OH)2 Core/Shell particles as well as its cytotoxicity against colon cancer cells

In this study, Ce3+/Tb3+ co-doped, Eu3+ doped GdB3O6 phosphor particles were synthesized by sol-gel method, coated with hydroxyapatite (HAP) and loaded with doxorubicin. Different chelating agents and surfactants (Cetyltrimethylammonium bromide (CTAB), citric acid, glycine, ethylenediaminetetraacetic acid (EDTA) and tartaric acid) were used in the synthesis in order to see their effect on the structure. While single phase Gadolinium triborate, GdB3O6 was obtained by using CTAB in precursor solution in the synthesis and Gadolinium orthoborate, GdBO3 produced when EDTA was used in precursor solution. Other organic molecules added to precursor solution produced mixtures of both phases. The highest photoluminescence intensity was obtained in the Gd0.95Ce0.025Tb0.025B3O6 and Gd0.825Eu0.175B3O6. In order to increase the drug loading efficiency, The Gd0.825Eu0.175B3O6 core was coated with Calcium hydroxyapatite, HAP. The core had an average size of 458.65 nm which increased to 616.85 nm after coating as seen with dynamic light scattering (DLS). Gd0.825Eu0.175B3O6@HAP particles were loaded with 7.82 % ± 0.80 wt doxorubicin and the release was studied at 37 °C in pH 7.4 phosphate-buffered saline (PBS) and pH 5.5 acetate buffer solutions. The total number of moles of drug released versus luminescence intensity was measured during the release studies and real-time imaging studies were carried out. Finally, cytotoxicity experiments were performed on HCT-116 colon cancer cells.

Spin chain orientation and magneto-optical coupling in twisted NiPS3 homostructures

Magnetic two-dimensional (2D) materials have garnered significant attention due to their unique electronic, magnetic, and optical properties and their potential applications in next-generation electronic and optoelectronic devices. However, the magneto-optical effects of oligolayer antiferromagnetic materials remain inadequately understood. Here, we investigate the magnetic properties of few-layer nickel phosphorus trisulfide (NiPS3) and its twisted heterostructures, emphasizing the observation of optical phenomena at low temperatures (1.65 K). By stacking few-layer NiPS3 to fabricate twisted homostructures, we probe their magnetic characteristics using photoluminescence (PL) spectroscopy. Our results reveal that sharp exciton peaks emerge at low temperatures and that the spin chain orientation in oligolayer NiPS3 can be discerned through the polarization dependence of exciton PL intensity. Notably, fewer-layered NiPS3 exhibits a significant magneto-optical effect under an applied magnetic field, allowing the modulation of the polarization angle of its exciton PL spectrum. Additionally, the polarization-dependent Raman spectrum of NiPS3 shows substantial changes under the influence of a magnetic field. These findings underscore the potential of few-layer NiPS3 for future magneto-optical device applications.

Predicting PbS Colloidal Quantum Dot Solar Cell Parameters Using Neural Networks Trained on Experimental Data

Recent advances in machine learning (ML) have enabled predictive programs for photovoltaic characterization, optimization, and materials discovery. Despite these advances, the standard photovoltaic materials development workflow still involves manually performing multiple characterization techniques on every new device, requiring significant time and expenditures. One barrier to ML implementation is that most models reported to date are trained on computer simulated data, due to the difficulty in experimentally collecting the massive data sets needed for model training, limiting the ability to assess the limitations and validity of these methods, as well as to access new potential physical mechanisms absent in simulations. Herein, several neural networks trained on experimental data from PbS colloidal quantum dot thin‐film solar cells are introduced. These models predict multiple, complex materials properties, including carrier mobility, relative photoluminescence intensity, and electronic trap‐state density, from a single, simple measurement: illuminated current–voltage curves. The measurement system considers the spatial distribution of the materials parameters to gather and predict large amounts of data by treating an inhomogeneous device as a series of thousands of micro‐devices, a novel feature compared to existing solutions. This model can be extended to other materials and devices, accelerating development times for new optoelectronic technologies.

Characterization of methylammonium tin iodide thin films prepared by sequential physical vapour deposition

Methylammonium tin triiodide (MASnI3) films were grown through Sequential Physical Vapour Deposition (SPVD) without breaking the vacuum and optimized by varying MAI thickness and annealing time while keeping SnI2 thickness constant. The film's crystallinity increased with MAI thickness and annealing time. Optimal bandgap was attained for the film with 500 nm MAI annealed for 20 & 40 min. FE-SEM revealed densely packed, large grains, increasing in size with MAI thickness and on annealing from 0 to 40 min and decreasing at 80 min. The film with 300 nm MAI thickness annealed for 40 min showed the strongest PL intensity suggesting reduced carrier recombination losses. Trap densities reduced with annealing time and MAI thickness due to improvements in films' crystallinity, grain sizes and reduced grain boundaries which act as carrier trapping sites. Hence, films prepared through SPVD, exhibit excellent structural, optical, and morphological properties, suitable for photovoltaic applications.

Effect of Ga/Al ratio on the luminescent properties of inorganic scintillating GGAG:(4 mol%)Ce ceramic powder

Gadolinium gallium aluminum garnet doped with cerium (GGAG:Ce), a promising ceramic scintillator material, is being excessively explored for its high quality optical properties by the bandgap engineering with different Ga/Al ratio. In this study, GGAG:Ce powders were synthesized using a solvothermal method and sintered at 1300 °C to investigate the impact of the gallium-to-aluminum (Ga/Al) ratio on optical characteristics. The results revealed that a decrease in the Ga/Al ratio led to a decrease in particle size. This observation can be attributed to the different reactivity and growth kinetics of gallium and aluminum precursors during the solvothermal process. Perturbations from the optimized Ga/Al ratio of 1.5–1.77 and 1.27 resulted in substantially enhanced photoluminescence (PL) and radioluminescence (RL) spectra intensities. PL lifetime measurements of various Ga/Al ratio exhibit average PL lifetime between 48 and 57 ns. Specifically, the deviations to 1.77 and 1.27 ratios yielded approximately 125 % and 106 %, respectively, in observed luminescent measurements compared to other ratios. This enhancement in PL and RL intensity suggests that the Ga/Al ratio plays a critical role in modulating the optical properties of GGAG:Ce ceramic powders. The results of this study also highlight the importance of the Ga/Al ratio in tailoring the optical or luminescence characteristics of GGAG:Ce powders.

Multimodal optical detection, identification and reduction of Cr(VI) with carbon dots and its PVA/polyNIPAM spheres based 2D luminescent photonic structures

Multiple emissive carbon dots (CDs) were synthesized through a one-step solvothermal acid-assisted method using citric acid and urea. Three main emission bands were observed at ∼431 nm, ∼501 nm, and ∼622 nm, corresponding to excitation wavelengths of 360 nm, 430 nm, and 550 nm, respectively. Simultaneous detection through salient discernible features of three metal ions has been achieved. Emission of CDs with Fe(III) shows reduction in intensity at 360 nm and 550 nm wavelengths and an enhancement of photoluminescence (PL) intensity at an excitation wavelength of 430 nm. Al(III) revealed turn-on PL signals, along with a redshift when excited at 360 and 430 nm, and turn-off intensity at excitation of 550 nm. Under all the excitation wavelengths, Cr(VI) exhibits PL quenching accompanied with an additional red shift. This sensor enhances the accuracy and reliability of the probe through multiple distinctive and characteristic responses for all the three ions for which the probes were selective. Apart from the optical detection at a certain wavelength, the Cr(VI) reduction to the less toxic Cr(III) through as-prepared CDs could be monitored at three different excitation wavelengths. The Fe(III) and Cr(VI) detection in solid state has also been demonstrated through 2D luminescent photonic structures formed with CDs-PVA (poly-vinyl alcohol)-polyNIPAM (poly (N-isopropylacrylamide)) composites that can possibly be used for anticounterfeiting applications.

Exploring Bismuth Oxide Supported Kaolinite for Photocatalytic Application

Bismuth oxide (Bi2O3) and Bi2O3–supported Kaolin were synthesized using household microwave–assisted methods (350 W, 5 min), with catalyst characteristics analyzed. XRD patterns confirmed the monoclinic structure of Bi2O3. Incorporating 20%w/w Kaolin increased the specific surface area of Bi2O3 from 6.2879 to 16.1345 m2/g, observed in FESEM images showing a hierarchical flower-like morphology resembling French fries alongside Kaolin plates. XRF analysis identified elements in Kaolin contributing to self–doping in band structure of Bi2O3, reducing its band gap and PL intensity. Kaolin/Bi2O3 composites demonstrated enhanced photocatalytic degradation of tetracycline (TC) under visible light, attributed to Bi2O3-generated radicals and increased surface area. The composite photocatalyst can be recycled up to three times. This research not only enhances the photocatalytic activity of Bi2O3 but also increases the value of a local waste material, Kaolin clay. Such enhancements could potentially extend to other metal oxides and abundant waste materials within the country.

CsPb(Br/Cl)3-Sm3+ codoped glasses for optical temperature sensing in FIR and chromatic coordinate modes

We have fabricated Sm3+ doped glasses, CsPb(Br/Cl)3 quantum dots (QDs) glasses and CsPb(Br/Cl)3-Sm3+ codoped glasses by melt-quenching and subsequent heat treatment for optical temperature sensing. Photoluminescence (PL), photoluminescence excitation (PLE) spectra and PL decay have been measured. Two CsPb(Br/Cl)3-Sm3+ samples with different PL peaks of QDs at 486 nm and 503 nm have been studied for fluorescence intensity ratio (FIR) and chromatic coordinate sensing. The CsPb(Br/Cl)3 QDs and Sm3+ ions exhibit distinguished spectral components and they are dynamically independent. PL intensity of QDs rapidly decreases with temperature, whereas PL intensity of Sm3+ slowly decreases with temperature. PL intensity of Sm3+ ions and CsPb(Cl/Br)3 QDs have been independently fitted. Then, FIR sensing has been studied. The different variation in PL intensity with temperature for Sm3+ and CsPb(Cl/Br)3 leads to the change of luminescent color and chromatic coordinate. The chromatic coordinate sensing has also been studied. Absolute sensitivity (Sa) and relative sensitivity (Sr) have been analyzed for both FIR and chromatic coordinate sensing. Compared with the chromatic coordinate mode, FIR mode has the larger Sa and Sr. But the chromatic coordinate method is more convenient for application, which does not require separating two spectral components. Both FIR and chromatic coordinate sensing modes show outstanding temperature cycling characteristics.

Performance improvement photodetectors with high speed and detectivity using terbium-doped ZIF-8 and MOF-5 films

Crystal engineering is critical for improving the crystal quality and tuning the optoelectronic properties of metal-organic frameworks (MOFs) materials. Doping MOFs is one of the practical approaches to improve the optoelectronic properties of MOFs. Here, a simple and effective method is used to grow MOF nanoparticles as films on the surface of the material. MOF-5 and ZIF-8 nanoparticles can be uniformly grown as films on the Si substrates. The crystalline quality of MOF films is improved after doping with Tb. Meanwhile, two-dimensional conducting photodetectors and photodetector arrays were prepared with perovskite films. Meanwhile, planar conducting photodetector arrays were prepared with MOF films. The photoluminescence (PL) intensity of the Tb-ZIF-8 and Tb-MOF-5 films shows an improvement compared to both ZIF-8 and MOF-5 layers, which leads to improved charge carriers transfer. The maximum photocurrents were about 4 × 10−8 A and 3 × 10−8 A of exposed light at 525 and 425 nm, respectively, at a fixed bias of 10 V for Tb-ZIF-8. The highest photo response of approximately 2.4 × 10−7 and 1.2 × 10−7 A was measured under 525 and 450 nm for the Tb-MOF-5-based device, respectively. The photocurrent behavior is optimized in the visible range due to the increased number of photo-generated carriers at 525 nm. The Tb-MOF-5 based device is a more powerful photodetector than the Tb-ZIF-8 based device under the same conditions. In addition, the stability of Tb-MOF-5 and Tb-ZIF-8 based photodetectors was obtained 77 % and 30 %, respectively. The photodetectors of Tb-MOF-5 have higher stability and better performance than Tb-ZIF-8.

Mechanism of Pressure-Modulated Self-Trapped Exciton Emission in Cs2TeCl6 Double Perovskite.

Pressure-modulated self-trapped exciton (STE) emission mechanism in all-inorganic lead-free metal halide double perovskites characterized by large Stokes-shifted broadband emission, has attracted much attention across various fields such as optics, optoelectronics, and biomedical sciences. Here, by employing the all-inorganic lead-free metal halide double perovskite Cs2TeCl6 as a paradigm, the authors elucidate that the performance of STE emission can be modulated by pressure, attributable to the pressure-induced evolution of the electronic state (ES). Two ES transitions happen at pressures of 1.6 and 5.8GPa, sequentially. The electronic behaviors of Cs2TeCl6 can be jointly modulated by both pressure and ES transitions. When the pressure reaches 1.6GPa, the Huang-Rhys factor S, indicative of the strength of electron-phonon coupling, attains an optimum value of ≈12.0, correlating with the pressure-induced photoluminescence (PL) intensity of Cs2TeCl6 is 4.8-fold that of its PL intensity under ambient pressure. Through analyzing the pressure-dependent STE dynamic behavioral changes, the authors have revealed the microphysical mechanism underlying the pressure-modulated enhancement and quenching of STE emission in Cs2TeCl6.

Novel synthesis of 1-D silicon nanowires grown on pyramidal black silicon substrates and intense visible emission

This work shows a new way to grow 1-D Silicon Nanowires (SiNWs) over pyramidal black silicon used as substrates. These nanostructures are grown by the plasma-assisted vapor–liquid-solid (VLS) as a bottom-up process, using tin thin films as a catalytic metal and dichlorosilane gas as a silicon precursor. SiNWs were obtained with diameters from 300-600 nm and 4–6 µm lengths on the black silicon surface. Due to the pyramid-shaped and porous nature of the black silicon surface, SiNWs form a complex mesh nanostructure. This network has a large surface area and exhibits intense and effective photoluminescence with a peak in the green spectrum, which is attributed to the quantum confinement effect that occurred in small nc-Si embedded inside SiNWs. These structural configurations hold significant promise for applications in optical biosensors, solar cells, and other prospective fields.

Low temperature sensing using photoluminescence of carbon quantum dot-based PVA film

In recent years, non-contact temperature reading sensors based on carbon quantum dots (CQDs) have attracted a lot of attention, most researchers have studied them at room temperature and high temperature. In this paper, red-CQDs (R-CQDs) was synthesized by hydrothermal method using o-phenylenediamine and chemically characterized by transmission electron microscopy, Fourier transform spectroscopy and X-ray photoelectron spectroscopy. The bandgap energy of R-CQDs was calculated from the absorption spectra, and the photoluminescence (PL) spectra at different laser powers showed that the PL of the R-CQDs were single-photo absorbing process. For better application, R-CQDs/polyvinyl alcohol (PVA) films were prepared. The PL properties of the film were studied. Experiments show in temperature range of 190∼260 K, the PL intensity decreases linearly with increasing temperature. Relative sensitivities of temperature sensing were calculated to be about −0.62% K−1. This work demonstrates the feasibility of its application in low temperature sensing.

Analysis of structural defects and their influence on red-emitting γ-Al2O3:Mn4+,Mg2+ nanowires using positron annihilation spectroscopy.

The present paper reported on the analysis of structural defects and their influence on the red-emitting γ-Al2O3:Mn4+,Mg2+ nanowires using positron annihilation spectroscopy (PAS). The nanowires were synthesized by hydrothermal method and low-temperature post-treatment using glucose as a reducing agent. X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), and photoluminescence excitation (PLE) were utilized, respectively, for determining the structural phase, morphology and red-emitting intensity in studied samples. Three PAS experiments, namely, positron annihilation lifetime (PAL), Doppler broadening (DB), and electron momentum distribution (EMD), were simultaneously performed to investigate the formations of structural defects in synthesized materials. Obtained results indicated that the doping concentration of 0.06% was optimal for the substitution of Mn4+ and Mg2+ to two Al3+ sites and the formation of oxygen vacancy (VO)-rich vacancy clusters (2VAl + 3VO) and large voids (~0.7 nm) with less Al atoms. Those characteristics reduced the energy transfer between Mn4+ ions, thus consequently enhanced the PL and PLE intensities. Moreover, this optimal doping concentration also effectively controlled the size of nanopores (~2.18 nm); hence, it is expected to maintain the high thermal conductivity of γ-Al2O3 nanowire-phosphor. The present study, therefore, demonstrated a potential application of γ-Al2O3 nanowire-phosphor in fabricating the high-performance optoelectronic devices.