Photodetectors Research Articles

Influence of AZO buffer layer on characteristics of ZnO film on glass substrates for Schottky UV photodetector applications

An Al-doped ZnO (AZO) thin film was introduced into the structure of Ag/ZnO schottky Photo detectors (PDs) prepared by magnetron sputtering method on glass substrates. Influences of AZO layer on characteristics of ZnO film and performances of Ag/ZnO schottky PDs were discussed in detail. Results investigated by means of the scanning electron microscopy (SEM), X-ray diffraction (XRD) and Photoluminescence (PL) spectra show that the introduction of an AZO buffer layer can effectively decrease the defects and improve the crystallization of the ZnO thin film. Compared with Ag/ZnO schottky PDs, the Ag/ZnO/AZO PDs possess more excellent rectifying characteristics, the photocurrent (Iph) to dark current (Id) ratio are improved from 6.4 to 100.7. Given the bias voltage at -2 V, the photoresponsivity R and detectivity D* are increased from 0.15 A W-1 to 4.08 × 1010 Jones to 0.69AW-1 and 3.78 × 1011 Jones, respectively. The response speed becomes faster, the response and delay times are decreased from 281 to 395 ms to 178 and 300 ms, respectively. The results provide a new idea for the preparation of high performance ZnO film UV PDs on low-cost glass substrates.

A fully-printed plasmonic nanoparticle-incorporated ZnO-based UV photodetector with very high responsivity and fast response

We report the development of a fully printed plasmonic Ag nanoparticle-enhanced ZnO-nanoparticle-based photodetector (PD) for the efficient detection of ultraviolet (UV) light. The contact electrodes with a gap of 200 µm are printed on a SiO2/Si substrate, and a micropattern of Ag nanoparticles (Ag NPs) is printed within the electrode gap to generate the plasmonic effect. The ZnO nanoparticle thin film is printed onto the array of Ag NPs to fabricate the plasmon-enhanced UV PD. The printed devices exhibit impressive performance with a peak responsivity of 48.8 A W−1, external quantum efficiency of 1.7 × 104%, and detectivity of 1.3 × 1013 Jones at 5 V bias. Moreover, the device shows an ultrafast photoresponse with a rise time of 24.3 µs and a fall time of 33.1 µs. Finite element method-based simulations confirm a significant field enhancement within the ZnO matrix upon incorporation of plasmonic Ag nanoparticles, explaining the increased photoresponse. The performance of the printed plasmon-enhanced UV-PD here offers a promising, simple, and inexpensive approach for the fabrication of future optoelectronic devices.

Performance evaluation of SILAR deposited Rb-Doped ZnO thin films for photodetector applications

ZnO-based photodetectors (PDs) compose a remarkable optoelectronic device field due to their high optical transmittance, electrical conductivity, wide band gap, and high binding energy. This study examined the visible light photodetector performance of the pristine and Rubidium (Rb)-doped ZnO thin films. The influence of Rb doping amount (2, 4, and 6 wt% in solution) on the electrical, optical, and structural properties of the ZnO-based thin films produced by the Successive Ion Layer Adsorption and Reaction (SILAR) technique was analyzed. Structural analyses showed that all peaks correspond to hexagonal wurtzite structure with no other peak from Rb-based phases, suggesting the high quality of the crystalline pristine and Rb-doped ZnO thin films. The morphology of the thin films shows homogenous layers formed of nanoparticles where particle size was first decreased and then increased with the increasing Rb doping according to Scanning Electron Microscope (SEM) morphology analysis. Besides that, Raman spectroscopy analyses indicate that the phonon lifetimes of the ZnO-based thin films slightly increased due to the improvement of the crystal quality with the increasing amount of Rb in the SILAR solution. Photosensor measurements of the nanostructured pristine and Rb-doped ZnO thin films were measured at different light power intensities under the visible light environment. Photosensor properties were examined depending on the doping amount and light power density. In light of the literature review, our study is the first to produce Rb-doped ZnO thin films via the SILAR method, which has a promising potential for photosensor applications.Graphical

Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method.

Ga2O3 is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response. Doping can improve the photoelectric properties of Ga2O3 materials. In this paper, In and Al elements alloyed Ga2O3 nanowires (InAl-Ga2O3 NWs) were successfully grown on p-GaN using a cost-effective chemical vapor deposition method and a vertical structure. The GaN/InAl-Ga2O3 NWs p-n self-powered wide-gap UV photodetector (PD) was constructed based on sputtered gold film as the bottom and top electrodes, and spin coated with polymethyl methacrylate as the insulating layer in the vertical direction. The GaN/InAl-Ga2O3 UV PD exhibits excellent performances, including an extremely low dark current of 0.015 nA, a maximum photocurrent of about 16 nA at zero-bias voltage under 265 nm illumination, and a light-to-dark current ratio greater than 103. The responsivity is 0.94 mA W-1, the specific detectivity is 9.63 × 109 jones, and the good fast response/attenuation time is 31.2/69.6 ms. The self-powered characteristics are derived from the internal electric field formed between p-type GaN and n-type InAl-Ga2O3 NWs, which is conducive to the rapid separation and transfer of photogenerated carriers. This work provides an innovative mechanism of high-performance metal oxide nanowires for the application of p-n junction photodetectors, which can operate without any external bias.

Electrode materials and structures in UV photodetectors

Electrodes can be recognized as the bridges between photodetectors (PDs) and outer measurement circuits. The interfacial electric properties between electrodes and sensitive materials would dominate the separation and collection of photo-induced charge carrier, which are recognized as one of the critical factors influencing the photo-detecting performance. In this paper, the electrode materials used in UV PDs are summarized and categorized according to their components. Then, the effects of electrode configurations (such as the contact types, band structure, and electrode structure) on the photoelectric performances of UV PDs are discussed. Varied kinds of specific electrodes such as transparent electrodes, flexible electrodes, and bio-originated electrodes are described. Finally, the perspective of electrodes in UV PDs is presented, which provides guidance for their future development.

Review about Organic-Inorganic Perovskite Single Crystal : Synthesis Methods, Properties and Applications

Due to their easy synthesis and exceptional optoelectronic characteristics, such as their long carrier diffusion length, high carrier mobility, low trap density, and tuneable absorption edge ranging from ultraviolet (UV) to near-infrared (NIR), perovskite single crystals have attracted a lot of attention in recent years. These properties have the potential to be used in solar cells, photo-detectors (PDs), lasers, and other devices. In this review provides detailed information about the synthesis methods and applications of perovskite single crystals.

First Principle calculations for structural and optoelectronic properties of MnNi1-xAgxGe alloys: A DFT study

We investigate the optical and electronic characteristics of parental MnNiGe and doped MnNi1-xAgxGe (x = 4 %, 8 %, and 12 %) for photodetector and other electronic applications. First principles are applied to every calculation performed in the context of DFT. The generalized gradient approximation with the Hubbard potential included (GGA + U) has been chosen as the appropriate approximation to handle systems with strongly coupled electrons. The semi-metallic parental MnNiGe and doped MnNi1-xAgxGe (x = 4 %, 8 %, and 12 %) is ideal for conducting materials in electronics due to band overlapping, according to our findings. Degenerate doping of Ag into MnNiGe includes spinning the Fermi level, changing the DOS profile, and reducing the density of Fermi level states that allow tunneling from the valence band to the conduction band. An important part of this research is analyzing the refractive index, reflectivity, extinction coefficient, dielectric function, absorption coefficient, and energy loss function of parental MnNiGe and doped MnNi1-xAgxGe (x = 4 %, 8 %, and 12 %). According to our findings, it is possible to create a photo detector based on MnNi1-xAgxGe (x = 4 %, 8 %, and 12 %) that can detect light in the visible range (below 500 nm). It has also been found that the MnNi1-xAgxGe (x = 4 %, 8 %, and 12 %) exhibits the highest sensitivity to light with a wavelength of 450 nm. Due to its advantageous optical characteristics in the visible and ultraviolet regions, this material could be useful for the development of numerous optoelectronic applications.

Design and simulation of a tunable parity-time symmetric optoelectronic oscillator utilizing integrated components

Non-Hermitian photonics, relaying on parity-time (PT) symmetry, have shown promise in achieving mode selection for optical or microwave single-mode oscillation. Typically, a PT-symmetric system is constructed using two coupled loops with identical geometry. This article utilizes the PT-symmetry property to select a single frequency mode in an optoelectronic oscillator (OEO). However, traditional OEO implementations often involve discrete components, limiting widespread adoption due to factors such as size, weight, power consumption, and cost. Our aim in this paper is to leverage integrated components within the OEO loop. The proposed structure incorporates an integrated micro-ring resonator (MRR) with a high-quality factor (Q-factor) that serves both as a modulator and a resonator. Additionally, we suggest employing an adjustable integrated power splitter utilizing a micro heater to balance the gain and loss of two mutually coupled OEO loops. In this configuration, two integrated photo detectors (PD) are also utilized. In this setup, the single-frequency mode can be easily identified by simultaneously utilizing the properties of PT-symmetry and an integrated high-Q-factor resonator, obviating the need for a narrowband microwave filter. By adjusting the center frequency of the microwave photonic filter (MPF), the frequency of the generated signal can be tuned over a wide range. For instance, setting the generated frequency of the microwave signal to 11.5 GHz results in a measured phase noise of − 76.5 dBc/Hz at a 10-kHz offset frequency, with a side mode suppression ratio (SMSR) of 40 dB.

Enhancement of the response speed of CIGS-based photodetector by Te-doping

Cu(In,Ga)Se2 (CIGS) based devices are promising candidates for high performance photodetector applications. The present work investigated the effects of Te-doping on the properties of CIGS layers and studied the performance of photodetectors (PDs) fabricated on these films. The films were vacuum evaporated on glass substrates and their morphological, structural and optical properties were evaluated after an annealing step at 550ºC. Morphological data indicated that undoped CIGS films had non-uniform surface features with large grains separated by nanoparticles. Addition of 6.6 % Te improved the morphology and yielded a smoother layer. Further increase in Te concentration showed appreciable reduction in surface feature size and shape. X-ray diffraction patterns showed that increasing the Te amount in CIGS caused a shift in the XRD peaks towards smaller angles pointing to replacement of Se atoms by Te. Peak splitting at higher Te samples suggested a graded structure with Se and Te amounts changing through the thickness of the film. Raman analysis demonstrated formation of CuInGa(Se,Te)2 (CIGST) compound. According to Tauc’s approximation, CIGS films with and without Te atoms possessed two energy band gaps of Eg1 and Eg2 that were in the ranges of 1.10–1.28 eV and 1.16–1.36 eV, respectively. Electrical data obtained from photodetector devices showed a responsivity of 4.44×10−1 A/W and a detectivity of 8.01×107 Jones for Te-free material, while the rise/fall times were measured as 34/148 ms. A much faster response speed of 19/20 ms was reached for devices fabricated on films with 10.2 % Te. This work demonstrated, for the first time, the fabrication low-cost and high-performance metal-semiconductor-metal (MSM) type CIGST-based PDs.

High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga2O3 Single-Crystal Layer.

The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-dark current ratio and slow light response speed. In this study, we present three types of UV PDs based on an unetched GaN, NP-GaN distributed Bragg reflector (DBR), and NP-GaN-DBR with a Ga2O3 single-crystal film (Ga2O3/NP-GaN-DBR). The unetched GaN PD does not exhibit a significant photoresponse. Compared to the NP-GaN-DBR PD device, the Ga2O3/NP-GaN-DBR PD demonstrates a larger light-dark current ratio (6.14 × 103) and higher specific detectivity (8.9 × 1010 Jones) under 365 nm at 5 V bias due to its lower dark current (3.0 × 10-10 A). This reduction in the dark current can be attributed to the insertion of the insulating Ga2O3 between the metal and the NP-GaN-DBR, which provides a thicker barrier thickness and higher barrier height. Additionally, the Ga2O3/NP-GaN-DBR PD device exhibits shorter rise/decay times (0.33/0.23 s) than the NP-GaN-DBR PD, indicating that the growth of a Ga2O3 layer on the DBR effectively reduces the trap density within the NP-GaN DBR structure. Although the device with a Ga2O3 layer presents low photoresponsivity (0.1 A/W), it should be feasible to use Ga2O3 as a dielectric layer based on the above-mentioned reasons.

Photodetectors Based on MASnI3/MoS2 Hybrid-Dimensional Heterojunction Transistors: Breaking the Responsivity-Speed Trade-Off.

Hybrid-dimensional heterojunction transistor (HDHT) photodetectors (PDs) have achieved high responsivities but unfortunately are still with unacceptably slow response speeds. Here, we propose a MASnI3/MoS2 HDHT PD, which exhibits the possibility to obtain high responsivity and fast response simultaneously. By exploring the detailed photoelectric responses utilizing a precise optoelectronic coupling simulation, the electrical performance of the device is optimally manipulated and the underlying physical mechanisms are carefully clarified. Particularly, the influence and modulation characteristics of the trap effects on the carrier dynamics of the PDs are investigated. We find that the localized trap effect in perovskite, especially at its top surface, is primarily responsible for the high responsivity and long response time; moreover, it is normally hard to break such a responsivity-speed trade-off due to the inherent limitation of the trap effect. By synergistically coupling the photogating effect, trap effect, and gate regulation, we indicate that it is possible to achieve an enhancement of the responsivity-bandwidth product by about 3 orders of magnitude. This study facilitates a fine modulation of the responsivity-speed relationship of hybrid-dimensional PDs, enabling breaking the traditional responsivity-speed trade-off of many PDs.

Relative intensity noise reduction for noise-like pulses based on synchronous intensity modulation

Extra-cavity synchronous intensity modulation is a straightforward and effective approach to suppress the full-bandwidth relative intensity noise (RIN) for noise-like pulse (NLP) fiber lasers. In this work, the picosecond NLPs are produced by a homemade Er/Yb co-doped mode-locked fiber laser and subsequent optimized by the synchronous intensity modulation device. The photodetector (PD) and electro-optical modulator (EOM) allow the real-time measurement and modulation for each optical pulse. A detailed description of key parameters for components is presented. The impact of DC bias voltage and RF signal amplitude on resulting RIN is experimentally investigated. We demonstrate a noteworthy reduction in RIN from 5.62% before synchronous intensity modulation to 1.91% afterward. Numerical investigations suggest that this method is potential to suppress RIN to below 1% under ideal conditions. The key factor in RIN reduction is correct operating region and high photoelectric-conversion linearity. The synchronous intensity modulation is an effective method to obtain low-RIN NLP laser sources, valuable for some practical applications.

Stable, Scalable, and Free-Standing Perovskite Quantum Dots Composite Reinforced by Cellulose Fibers.

Perovskite quantum dots (PQDs) have attracted emerging attention as fluorescent and light-absorbing materials for next-generation optoelectronics due to their outstanding properties and cost-efficiency. However, PQD thin film suffers significant instability due to structure and material failures, which hinders their application in flexible and reliable PQD-based advanced wearable devices. Herein, we use commercial cellulose fiber-based filter paper as a substrate to synthesize PQDs in situ and fabricate PQD-paper free-standing flexible composite film. The abundant hydroxy capping ligands of cellulose fibers and the unique dense network structure of the filter paper can facilitate confined crystallization, forming strong interactions between the PQDs and substrate, the unpackaged PQD composite film showed extraordinary stability (>30 days) in the air with high humidity (90%). Meanwhile, the strong interaction between PQDs and paper enables an ultrasimple drop-cast synthesis process with excellent process tolerance, making it customizable and easy to scale up (10 cm in diameter). Due to the uniformly dispersed PQDs on cellulose fibers of the substrate, the composite demonstrates impressive photo-responsive properties. Photodetector (PD) arrays were designed on free-standing PQD paper and flexible graphitic electrodes, and circuits were fabricated by drawing. The PD arrays can work as optical and electrical dual-mode image sensors with incredible bending robustness, enduring up to 100,000 cycles at 180°.

Realizing the High Efficiency of Type‐II Superlattice Infrared Sensors Integrated Wire‐Grid Polarizer via Femtosecond Laser Polishing

AbstractA comprehensive strategy to enhance the polarization performance of mid‐wave infrared photodetectors (PDs) is developed and implemented by integrating wire‐grid polarizers (WGPs) using nanoimprint lithography and femtosecond laser (FSL) polishing. This combined approach offers significant advantages, including large‐area fabrication capabilities, practical device integration, and improved polarization characteristics. By addressing optical losses, the primary factor contributing to polarization degradation through the thermal effects of FSL polishing, substantial improvements are achieved in surface roughness and grain boundary reduction on the WGP, resulting in remarkable performance enhancements. As a result, the extinction ratio of the integrated WGP InAs/GaSb type‐II superlattice PD achieves an impressive value of up to 1044. This approach holds promising potential for advancing polarization‐based imaging and measurement systems to new heights.

Graphene-Perovskite Fibre Photodetectors.

The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, fibre PDs are prepared by combining rolled graphene layers and photoactive perovskites. Conductive fibres (~500 Ωcm-1) are made by rolling single-layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al2O3 and parylene C), another rolled SLG as a channel, and perovskite as photoactive component. The resulting gate-tunable PD has a response time~9ms, with an external responsivity~22kAW-1 at 488nm for a 1V bias. The external responsivity is two orders of magnitude higher, and the response time one order of magnitude faster, than state-of-the-art wearable fibre-based PDs. Under bending at 4mm radius, up to~80% photocurrent is maintained. Washability tests show~72% of initial photocurrent after 30 cycles, promising for wearableapplications.

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection.

The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top-down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their optical and electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) on patterned Si substrates, devoid of any catalyst. These GaN TPAs feature highly ordered, large-scale structures, attributed to the utilization of 3D Si substrates and thin AlN interlayers to alleviate epitaxial strains and limit dislocation formation. Comprehensive characterization via scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and cathodoluminescence attests to the superior structural and optical attributes of these crystals. Furthermore, photoluminescence and ultraviolet (UV)-visible diffuse reflectance spectroscopy reveal sharp band-edge emission and significant light trapping in the UV bands. Employing these GaN TPAs, we constructed metal-semiconductor-metal visible-blind UV photodetectors (PDs) incorporating Ti3C2 MXene as Schottky electrodes. These PDs display exceptional responsivity, achieving 5.32 × 103 mA/W at 255 nm and an ultrahigh UV/visible rejection ratio (R255nm/R450nm) approaching 106, which are 1-2 orders of magnitude higher than most recently reported works. This exploration showcases novel GaN-based microstructures characterized by uniformity, ordered geometry, and exemplary crystalline integrity, paving the way for developing optoelectronic applications.

Photodetector for visible light based on Fe(phen)2(SCN)2 molecule

This paper describes a unique method that uses Iron (phen) molecule [phen: 1,10-phenanthroline] placed on a glass substrate to create a photodetector (PD) that is sensitive to visible light as a heterostructure device. The structural, morphological, and optical properties of the samples were investigated using techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectra (EDX), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometry. The photosensitivity of the Iron (phen) /glass PD was evaluated at different bias voltages (5, 10, 15, and 20 V) at wavelength of 510 nm. The photosensitivity values were found to be 58.45, 76.82, 84.9, and 87.83, indicating the PD's ability to generate a measurable electrical response to light stimuli in the visible range. Furthermore, the response and recovery times of the Iron (phen) PD were assessed when exposed to pulsed visible light at a wavelength of 510 nm and bias voltages of 5, 10, 15 and 20 V. The results indicated favorable response and recovery times, suggesting the PD's capability to quickly detect and recover from changes in light intensity. At a bias voltage of 20 V and under illumination with visible light at 510 nm, the Iron (phen) PD demonstrated a maximum current gain of 9.22 and a quantum efficiency (ƞ) of 28.17. These values indicate the PD's ability to amplify the generated electrical current and efficiently convert incident photons into detectable electrical signals. Overall, the fabricated Iron (phen) glass PD exhibited promising photosensitivity, response and recovery times, current gain, and quantum efficiency when exposed to visible light. The findings suggest the potential application of Iron (phen) as a material for visible light photodetection.

Efficient Direct Detection of Twin Single-Sideband Quadrature-Phase Shift Keying Using a Single Detector with Hierarchical Blind-Phase Search

We propose a novel reception scheme for twin single-sideband (twin-SSB) signals using just a single photodetector (PD), significantly reducing the system complexity and cost. To detect a twin-SSB with power-unbalanced quadrature-phase shift keying (QPSK) sidebands upon detection via a single PD at the receiver side, two QPSKs carried in two sidebands are coherently superposed and detected in a 16-ary quadrature amplitude modulation (16-QAM) format. This technique notably diminishes the linearity and effective number of bits required for the transmitter components in high-speed optical transmission systems. Moreover, a hierarchical blind-phase search (HBPS) algorithm is proposed to compensate for the imperfect phase rotation of QPSK signals during transmission. To demonstrate the effectiveness of our proposed method, we successfully conducted simulations of 112 Gb/s 16-QAM signal transmission over a 10 km standard single-mode fiber (SSMF), achieving bit error ratios (BERs) of 7.84×10−4, well below the 7% hard-decision forward error correction (HD-FEC) threshold of 3.8×10−3. In addition, the synthetic transmission scheme proposed in this paper is compared with the traditional 16-QAM signal transmission scheme, and the results show that the proposed scheme does not introduce a performance cost with the same received optical power (ROP) and transmission distance.

Introducing Ag Dopants into CdSe Nanoplatelets (NPLs) Leads to Effective Charge Separation for Better Photodetector Performance.

Solution-processed colloidal cadmium chalcogenide nanoplatelets (NPLs)-based photodetectors (PD) are promising materials for next-generation optoelectronic devices due to their excellent optical properties. Here, we report on ultrafast carrier relaxation dynamics of four monolayer (4 ML) Ag-doped CdSe (Ag: CdSe) NPLs using ultrafast transient absorption spectroscopy and their photodetectors applications. A broad dopant emission is observed at around 650 nm with a large FWHM of ~431 meV and band edge emission at 515 nm. The intragap dopant state acts as a hole acceptor, which leads to better charge separation. The ultrafast transient absorption spectroscopy study shows faster carrier recombination dynamics with a hole transfer time scale of ~10 ps in Ag-doped CdSe NPLs. This supports the excited hole capture phenomenon at the dopant state. Ag-doped CdSe NPLs-based PD performed better than undoped CdSe NPLs with detectivity and responsivity values of 1.3×1010 Jones and 2.4 mA/W, respectively.

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity.

Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a Ga2O3/ZnO:V heterojunction. The performance of the Ga2O3/ZnO:V PD is significantly enhanced through the reasonable coupling of ferroelectricity and piezoelectricity within the ZnO:V film. The device at 260 nm exhibits excellent photoelectric properties with high peak responsivity of 64.5 mA/W, a specific detectivity of 3.8 × 1010 Jones, and a rise/decay time of 1.9/45.2 μs, together with reproducibility and stability. Systematical energy band diagram analysis reveals that the excellent performance of Ga2O3/ZnO:V PD can be attributed to the driving forces arising from the addition of the depolarization field and piezoelectric field, which increases the intensity of built-in electric field and promotes the separation and transport of photogenerated carriers at the heterojunction interface. The findings of our research provide a novel avenue and valuable guidance for the design of high-performance self-powered photodetectors.