Photodetectors Research Articles

Design and simulation of a tunable parity-time symmetric optoelectronic oscillator utilizing integrated components

Non-Hermitian photonics, relaying on parity-time (PT) symmetry, have shown promise in achieving mode selection for optical or microwave single-mode oscillation. Typically, a PT-symmetric system is constructed using two coupled loops with identical geometry. This article utilizes the PT-symmetry property to select a single frequency mode in an optoelectronic oscillator (OEO). However, traditional OEO implementations often involve discrete components, limiting widespread adoption due to factors such as size, weight, power consumption, and cost. Our aim in this paper is to leverage integrated components within the OEO loop. The proposed structure incorporates an integrated micro-ring resonator (MRR) with a high-quality factor (Q-factor) that serves both as a modulator and a resonator. Additionally, we suggest employing an adjustable integrated power splitter utilizing a micro heater to balance the gain and loss of two mutually coupled OEO loops. In this configuration, two integrated photo detectors (PD) are also utilized. In this setup, the single-frequency mode can be easily identified by simultaneously utilizing the properties of PT-symmetry and an integrated high-Q-factor resonator, obviating the need for a narrowband microwave filter. By adjusting the center frequency of the microwave photonic filter (MPF), the frequency of the generated signal can be tuned over a wide range. For instance, setting the generated frequency of the microwave signal to 11.5 GHz results in a measured phase noise of − 76.5 dBc/Hz at a 10-kHz offset frequency, with a side mode suppression ratio (SMSR) of 40 dB.

Enhancement of the response speed of CIGS-based photodetector by Te-doping

Cu(In,Ga)Se2 (CIGS) based devices are promising candidates for high performance photodetector applications. The present work investigated the effects of Te-doping on the properties of CIGS layers and studied the performance of photodetectors (PDs) fabricated on these films. The films were vacuum evaporated on glass substrates and their morphological, structural and optical properties were evaluated after an annealing step at 550ºC. Morphological data indicated that undoped CIGS films had non-uniform surface features with large grains separated by nanoparticles. Addition of 6.6 % Te improved the morphology and yielded a smoother layer. Further increase in Te concentration showed appreciable reduction in surface feature size and shape. X-ray diffraction patterns showed that increasing the Te amount in CIGS caused a shift in the XRD peaks towards smaller angles pointing to replacement of Se atoms by Te. Peak splitting at higher Te samples suggested a graded structure with Se and Te amounts changing through the thickness of the film. Raman analysis demonstrated formation of CuInGa(Se,Te)2 (CIGST) compound. According to Tauc’s approximation, CIGS films with and without Te atoms possessed two energy band gaps of Eg1 and Eg2 that were in the ranges of 1.10–1.28 eV and 1.16–1.36 eV, respectively. Electrical data obtained from photodetector devices showed a responsivity of 4.44×10−1 A/W and a detectivity of 8.01×107 Jones for Te-free material, while the rise/fall times were measured as 34/148 ms. A much faster response speed of 19/20 ms was reached for devices fabricated on films with 10.2 % Te. This work demonstrated, for the first time, the fabrication low-cost and high-performance metal-semiconductor-metal (MSM) type CIGST-based PDs.

High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga2O3 Single-Crystal Layer.

The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-dark current ratio and slow light response speed. In this study, we present three types of UV PDs based on an unetched GaN, NP-GaN distributed Bragg reflector (DBR), and NP-GaN-DBR with a Ga2O3 single-crystal film (Ga2O3/NP-GaN-DBR). The unetched GaN PD does not exhibit a significant photoresponse. Compared to the NP-GaN-DBR PD device, the Ga2O3/NP-GaN-DBR PD demonstrates a larger light-dark current ratio (6.14 × 103) and higher specific detectivity (8.9 × 1010 Jones) under 365 nm at 5 V bias due to its lower dark current (3.0 × 10-10 A). This reduction in the dark current can be attributed to the insertion of the insulating Ga2O3 between the metal and the NP-GaN-DBR, which provides a thicker barrier thickness and higher barrier height. Additionally, the Ga2O3/NP-GaN-DBR PD device exhibits shorter rise/decay times (0.33/0.23 s) than the NP-GaN-DBR PD, indicating that the growth of a Ga2O3 layer on the DBR effectively reduces the trap density within the NP-GaN DBR structure. Although the device with a Ga2O3 layer presents low photoresponsivity (0.1 A/W), it should be feasible to use Ga2O3 as a dielectric layer based on the above-mentioned reasons.

Photodetectors Based on MASnI3/MoS2 Hybrid-Dimensional Heterojunction Transistors: Breaking the Responsivity-Speed Trade-Off.

Hybrid-dimensional heterojunction transistor (HDHT) photodetectors (PDs) have achieved high responsivities but unfortunately are still with unacceptably slow response speeds. Here, we propose a MASnI3/MoS2 HDHT PD, which exhibits the possibility to obtain high responsivity and fast response simultaneously. By exploring the detailed photoelectric responses utilizing a precise optoelectronic coupling simulation, the electrical performance of the device is optimally manipulated and the underlying physical mechanisms are carefully clarified. Particularly, the influence and modulation characteristics of the trap effects on the carrier dynamics of the PDs are investigated. We find that the localized trap effect in perovskite, especially at its top surface, is primarily responsible for the high responsivity and long response time; moreover, it is normally hard to break such a responsivity-speed trade-off due to the inherent limitation of the trap effect. By synergistically coupling the photogating effect, trap effect, and gate regulation, we indicate that it is possible to achieve an enhancement of the responsivity-bandwidth product by about 3 orders of magnitude. This study facilitates a fine modulation of the responsivity-speed relationship of hybrid-dimensional PDs, enabling breaking the traditional responsivity-speed trade-off of many PDs.

Relative intensity noise reduction for noise-like pulses based on synchronous intensity modulation

Extra-cavity synchronous intensity modulation is a straightforward and effective approach to suppress the full-bandwidth relative intensity noise (RIN) for noise-like pulse (NLP) fiber lasers. In this work, the picosecond NLPs are produced by a homemade Er/Yb co-doped mode-locked fiber laser and subsequent optimized by the synchronous intensity modulation device. The photodetector (PD) and electro-optical modulator (EOM) allow the real-time measurement and modulation for each optical pulse. A detailed description of key parameters for components is presented. The impact of DC bias voltage and RF signal amplitude on resulting RIN is experimentally investigated. We demonstrate a noteworthy reduction in RIN from 5.62% before synchronous intensity modulation to 1.91% afterward. Numerical investigations suggest that this method is potential to suppress RIN to below 1% under ideal conditions. The key factor in RIN reduction is correct operating region and high photoelectric-conversion linearity. The synchronous intensity modulation is an effective method to obtain low-RIN NLP laser sources, valuable for some practical applications.

Stable, Scalable, and Free-Standing Perovskite Quantum Dots Composite Reinforced by Cellulose Fibers.

Perovskite quantum dots (PQDs) have attracted emerging attention as fluorescent and light-absorbing materials for next-generation optoelectronics due to their outstanding properties and cost-efficiency. However, PQD thin film suffers significant instability due to structure and material failures, which hinders their application in flexible and reliable PQD-based advanced wearable devices. Herein, we use commercial cellulose fiber-based filter paper as a substrate to synthesize PQDs in situ and fabricate PQD-paper free-standing flexible composite film. The abundant hydroxy capping ligands of cellulose fibers and the unique dense network structure of the filter paper can facilitate confined crystallization, forming strong interactions between the PQDs and substrate, the unpackaged PQD composite film showed extraordinary stability (>30 days) in the air with high humidity (90%). Meanwhile, the strong interaction between PQDs and paper enables an ultrasimple drop-cast synthesis process with excellent process tolerance, making it customizable and easy to scale up (10 cm in diameter). Due to the uniformly dispersed PQDs on cellulose fibers of the substrate, the composite demonstrates impressive photo-responsive properties. Photodetector (PD) arrays were designed on free-standing PQD paper and flexible graphitic electrodes, and circuits were fabricated by drawing. The PD arrays can work as optical and electrical dual-mode image sensors with incredible bending robustness, enduring up to 100,000 cycles at 180°.

Realizing the High Efficiency of Type‐II Superlattice Infrared Sensors Integrated Wire‐Grid Polarizer via Femtosecond Laser Polishing

AbstractA comprehensive strategy to enhance the polarization performance of mid‐wave infrared photodetectors (PDs) is developed and implemented by integrating wire‐grid polarizers (WGPs) using nanoimprint lithography and femtosecond laser (FSL) polishing. This combined approach offers significant advantages, including large‐area fabrication capabilities, practical device integration, and improved polarization characteristics. By addressing optical losses, the primary factor contributing to polarization degradation through the thermal effects of FSL polishing, substantial improvements are achieved in surface roughness and grain boundary reduction on the WGP, resulting in remarkable performance enhancements. As a result, the extinction ratio of the integrated WGP InAs/GaSb type‐II superlattice PD achieves an impressive value of up to 1044. This approach holds promising potential for advancing polarization‐based imaging and measurement systems to new heights.

Graphene-Perovskite Fibre Photodetectors.

The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, fibre PDs are prepared by combining rolled graphene layers and photoactive perovskites. Conductive fibres (~500 Ωcm-1) are made by rolling single-layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al2O3 and parylene C), another rolled SLG as a channel, and perovskite as photoactive component. The resulting gate-tunable PD has a response time~9ms, with an external responsivity~22kAW-1 at 488nm for a 1V bias. The external responsivity is two orders of magnitude higher, and the response time one order of magnitude faster, than state-of-the-art wearable fibre-based PDs. Under bending at 4mm radius, up to~80% photocurrent is maintained. Washability tests show~72% of initial photocurrent after 30 cycles, promising for wearableapplications.

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection.

The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top-down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their optical and electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) on patterned Si substrates, devoid of any catalyst. These GaN TPAs feature highly ordered, large-scale structures, attributed to the utilization of 3D Si substrates and thin AlN interlayers to alleviate epitaxial strains and limit dislocation formation. Comprehensive characterization via scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and cathodoluminescence attests to the superior structural and optical attributes of these crystals. Furthermore, photoluminescence and ultraviolet (UV)-visible diffuse reflectance spectroscopy reveal sharp band-edge emission and significant light trapping in the UV bands. Employing these GaN TPAs, we constructed metal-semiconductor-metal visible-blind UV photodetectors (PDs) incorporating Ti3C2 MXene as Schottky electrodes. These PDs display exceptional responsivity, achieving 5.32 × 103 mA/W at 255 nm and an ultrahigh UV/visible rejection ratio (R255nm/R450nm) approaching 106, which are 1-2 orders of magnitude higher than most recently reported works. This exploration showcases novel GaN-based microstructures characterized by uniformity, ordered geometry, and exemplary crystalline integrity, paving the way for developing optoelectronic applications.

Photodetector for visible light based on Fe(phen)2(SCN)2 molecule

This paper describes a unique method that uses Iron (phen) molecule [phen: 1,10-phenanthroline] placed on a glass substrate to create a photodetector (PD) that is sensitive to visible light as a heterostructure device. The structural, morphological, and optical properties of the samples were investigated using techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectra (EDX), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometry. The photosensitivity of the Iron (phen) /glass PD was evaluated at different bias voltages (5, 10, 15, and 20 V) at wavelength of 510 nm. The photosensitivity values were found to be 58.45, 76.82, 84.9, and 87.83, indicating the PD's ability to generate a measurable electrical response to light stimuli in the visible range. Furthermore, the response and recovery times of the Iron (phen) PD were assessed when exposed to pulsed visible light at a wavelength of 510 nm and bias voltages of 5, 10, 15 and 20 V. The results indicated favorable response and recovery times, suggesting the PD's capability to quickly detect and recover from changes in light intensity. At a bias voltage of 20 V and under illumination with visible light at 510 nm, the Iron (phen) PD demonstrated a maximum current gain of 9.22 and a quantum efficiency (ƞ) of 28.17. These values indicate the PD's ability to amplify the generated electrical current and efficiently convert incident photons into detectable electrical signals. Overall, the fabricated Iron (phen) glass PD exhibited promising photosensitivity, response and recovery times, current gain, and quantum efficiency when exposed to visible light. The findings suggest the potential application of Iron (phen) as a material for visible light photodetection.

Efficient Direct Detection of Twin Single-Sideband Quadrature-Phase Shift Keying Using a Single Detector with Hierarchical Blind-Phase Search

We propose a novel reception scheme for twin single-sideband (twin-SSB) signals using just a single photodetector (PD), significantly reducing the system complexity and cost. To detect a twin-SSB with power-unbalanced quadrature-phase shift keying (QPSK) sidebands upon detection via a single PD at the receiver side, two QPSKs carried in two sidebands are coherently superposed and detected in a 16-ary quadrature amplitude modulation (16-QAM) format. This technique notably diminishes the linearity and effective number of bits required for the transmitter components in high-speed optical transmission systems. Moreover, a hierarchical blind-phase search (HBPS) algorithm is proposed to compensate for the imperfect phase rotation of QPSK signals during transmission. To demonstrate the effectiveness of our proposed method, we successfully conducted simulations of 112 Gb/s 16-QAM signal transmission over a 10 km standard single-mode fiber (SSMF), achieving bit error ratios (BERs) of 7.84×10−4, well below the 7% hard-decision forward error correction (HD-FEC) threshold of 3.8×10−3. In addition, the synthetic transmission scheme proposed in this paper is compared with the traditional 16-QAM signal transmission scheme, and the results show that the proposed scheme does not introduce a performance cost with the same received optical power (ROP) and transmission distance.

Introducing Ag Dopants into CdSe Nanoplatelets (NPLs) Leads to Effective Charge Separation for Better Photodetector Performance.

Solution-processed colloidal cadmium chalcogenide nanoplatelets (NPLs)-based photodetectors (PD) are promising materials for next-generation optoelectronic devices due to their excellent optical properties. Here, we report on ultrafast carrier relaxation dynamics of four monolayer (4 ML) Ag-doped CdSe (Ag: CdSe) NPLs using ultrafast transient absorption spectroscopy and their photodetectors applications. A broad dopant emission is observed at around 650 nm with a large FWHM of ~431 meV and band edge emission at 515 nm. The intragap dopant state acts as a hole acceptor, which leads to better charge separation. The ultrafast transient absorption spectroscopy study shows faster carrier recombination dynamics with a hole transfer time scale of ~10 ps in Ag-doped CdSe NPLs. This supports the excited hole capture phenomenon at the dopant state. Ag-doped CdSe NPLs-based PD performed better than undoped CdSe NPLs with detectivity and responsivity values of 1.3×1010 Jones and 2.4 mA/W, respectively.

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity.

Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a Ga2O3/ZnO:V heterojunction. The performance of the Ga2O3/ZnO:V PD is significantly enhanced through the reasonable coupling of ferroelectricity and piezoelectricity within the ZnO:V film. The device at 260 nm exhibits excellent photoelectric properties with high peak responsivity of 64.5 mA/W, a specific detectivity of 3.8 × 1010 Jones, and a rise/decay time of 1.9/45.2 μs, together with reproducibility and stability. Systematical energy band diagram analysis reveals that the excellent performance of Ga2O3/ZnO:V PD can be attributed to the driving forces arising from the addition of the depolarization field and piezoelectric field, which increases the intensity of built-in electric field and promotes the separation and transport of photogenerated carriers at the heterojunction interface. The findings of our research provide a novel avenue and valuable guidance for the design of high-performance self-powered photodetectors.

High-performance transparent AZO UV photodetectors

In this work, the fabrication of undoped ZnO (ZO) and 3 at.% aluminum (Al) doped ZnO (AZO) thin films (TFs) based transparent photodetectors (PDs) was reported. Both films were spin-coated on fluorine-doped tin oxide (FTO) substrates to investigate the influence of Al doping on the ultraviolet (UV) detection performance of the devices. The systematic characterizations reveal that Al doping positively affects the characteristics of ZO-TFs. The Al doping leads to slight shift in crystalline peaks and induces an enhancement in grain size. In addition, the surface roughness of ZO-TFs gets lower on Al doping. Further, the Al doping improved the transparency and widening of band gap of TFs. The PDs having metal–semiconductor-metal (MSM) configuration were achieved by screen-printing of Ag paste onto ZO and AZO-TFs. The current–voltage (I-V) profiles of the fabricated PDs were measured in the dark and under UV excitation of 365 nm. The AZO-TFs based MSM PD exhibits a spectral responsivity of 326.82 mA/W and an external quantum efficiency of 111.03%. The reproducibility of the fabricated PDs was tested by performing time-dependent photo-response measurements.

An ultraviolet photodetector based on conductive hydrogenated TiO2 film prepared by radio frequency atmospheric pressure plasma

The growing demand for real-time ultraviolet (UV) monitoring calls for a simple, rapid, and low-cost strategy to prepare UV photodetectors (PDs). We prepare a wearable real-time UV PD based on hydrogenated titanium dioxide film synthesized by radio frequency atmospheric pressure plasma. The conductivity of our hydrogenated titanium dioxide is improved to 10.2 S cm−1, nine orders of magnitude higher than that of pristine titanium dioxide after 10 min plasma treatment. Plasma hydrogenation disrupts the surface crystal structure, introducing oxygen vacancies (OVs) that create self-doped titanium(III) and titanium(II) species. First-principles calculations indicate that the OVs raise the Fermi level of TiO2 and distort the lattice locally. Our optimized film has a distinctive periodic switching characteristic under intermittent illumination; its responsivity is good from 280 to 400 nm, peaking at 632.35 mA W−1 at 365 nm. The fabricated wearable sensor based on the optimized film effectively monitors the daily variation of ambient UV intensity in three typical weather types, transferring its data to a smartphone via Wi-Fi.

Filter-Less Color-Selective Photodetector Derived from Integration of Parallel Perovskite Photoelectric Response Units.

Color-selective photodetectors (PDs) play an indispensable role in spectral recognition, image sensing, and other fields. Nevertheless, complex filters and delicate optical paths in such devices significantly increase their complexity and size, which subsequently impede their integration in smart optoelectronic chips for universal applications. This work demonstrates the successful fabrication of filter-less color-selective perovskite PDs by integrating three perovskite units with different photoresponse on a single chip. The variation in photoresponse is attributed to different quantities of SnO2 nanoparticles, synthesized through controlled ultrasonic treatment on the surface of the electron transportation layer SnS2, which selectively absorb short-wavelength light, thus increasing the relative transmittance of long-wavelength light and enhancing the photoresponse of the units to long wavelengths. By integrating any two units and deriving the formula for the wavelength to the responsivity ratio, a wavelength sensor is developed which can accurately identify incident light in the range of 400-700nm with a minimum error <3nm. Furthermore, the device integrating three units with different photoresponse can identify red, green and blue in polychromatic light to achieve color imaging with a relative error <6%. This work provides valuable insights into wavelength identification and color imaging of perovskite PDs.

High Sensitive and Stable UV-Vis Photodetector Based on MoS2/MoO3 vdW Heterojunction.

The development of new high-performance photodetectors (PDs) is currently focused on achieving small size, low power consumption, low cost, and large bandwidth. Two-dimensional (2D) materials and heterostructures offer promising approaches for the future development of optoelectronic devices. However, there has been limited research on 2D wide-bandgap semiconductor heterostructures. In this study, we successfully constructed a MoS2/MoO3 vdW heterojunction PD. This PD exhibited excellent response and significant photovoltaic behavior in the ultraviolet (UV) to visible (Vis) range. Under 365 nm UV light and 1 V bias voltage, the PD demonstrated a high responsivity of 645 mA/W, a high specific detectivity of 8.98 × 1010 Jones, and fast response speeds of 55.9/59.6 ms. At 0 V bias voltage, the responsivity reached as high as 157 mA/W. Furthermore, the PD exhibited remarkable stability in its performance. These outstanding characteristics can be attributed to the strong internal electric field created by the type II heterojunction structure and the chemical stability of the materials. This work opens a route for the application of 2D wide-bandgap semiconductor materials in optoelectronic devices.

Indeno[3,2-b]carbazole-Based Small Molecule Layer Enables Optimized Carrier Transport for PbS Quantum Dot NIR Photodetectors.

Colloidal quantum dots (CQDs) have garnered considerable attention for photodetectors (PDs), attributable to exceptional photoelectric properties and ease solution-based processing. However, the prevalent use of 1,2-ethanedithiol (EDT) as a hole transport layer (HTL) has limitations, such as energy level discrepancies, requisite oxidation, and intricate multilayer assembly. Organic p-type materials, lauded for their superior attributes and synthetic versatility, are now stepping forward as viable substitutes for conventional EDT HTLs. In this work, we introduced an organic HTL derived from indolo[3,2-b]carbazole, named ZL004, leading to a marked improvement in carrier generation and collection, facilitated by the optimized band alignment and enhanced interfacial charge dynamics. The ZL004-based PDs exhibit a photoresponsivity of 0.45 A/W, a noise current of 1.8 × 10-11 A Hz-0.5, a specific detectivity of 4.6 × 109 Jones, and an expansive linear dynamic range of 107 dB─surpassing EDT-based devices across the board, demonstrating the extraordinary property of organic p-type materials for CQD-based PDs.

Dark Current in Broadband Perovskite-Organic Heterojunction Photodetectors Controlled by Interfacial Energy Band Offset.

Lead halide perovskite and organic semiconductors are promising classes of materials for photodetector (PD) applications. State-of-the-art perovskite PDs have performance metrics exceeding silicon PDs in the visible. While organic semiconductors offer bandgap tunability due to their chemical design with detection extended into the near-infrared (NIR), perovskites are limited to the visible band and the first fraction of the NIR spectrum. In this work, perovskite-organic heterojunction (POH) PDs with absorption up to 950nm are designed by the dual contribution of perovskite and the donor:acceptor bulk-heterojunction (BHJ), without any intermediate layer. The effect of the energetics of the donor materials is systematically studied on the dark current (Jd) of the device by using the PBDB-T polymer family. Combining the experimental results with drift-diffusion simulations, it is shown that Jd in POH devices is limited by thermal generation via deep trap states in the BHJ. Thus, the best performance is obtained for the PM7-based POH, which delivers an ultra-low noise current of 2×10-14AHz-1/2 and high specific detectivity of 4.7×1012Jones in the NIR. Last, the application of the PM7-based POH devices as NIR pulse oximeter with high-accuracy heartbeat monitoring at long-distance of 2 meters is demonstrated.

Silicon Nanoribbon Arrays Based Printed Multifunctional Flexible Photovoltaic Microcells

AbstractThe photovoltaic devices offer promising eco‐friendly solution for self‐powered flexible electronics. However, their fabrication on flexible substrate is not easy due to mismatches between the requirements of conventional microfabrication and the thermal, and mechanical features of the substrates. Herein, direct roll printed nanoscale photoactive electronic layers are presented, which are further processed to develop ≈315 µm2 sized miniaturized photovoltaic microcells. Using a set of 32 microcells, connected in parallel configuration, indoor light harvesting is shown at a maximum power density of ≈10 µW cm−2 under white LED illumination. Further, the dual functionality of developed microcells i.e., energy harvesting as well as wideband photodetection is demonstrated. As self‐powered photo sensors the developed photovoltaic microcells exhibit distinctive photo responses under white LED‐UV (365 nm)‐ NIR (850 nm) light illumination, with exceptionally high‐speed response (rise time τRise = 205 µs and fall time τFall = 2000 µs), and a peak responsivity of 2.48 A W−1 to UV light at zero bias voltage. The presented results show the potential usage of printed multifunctional photovoltaic microcells in a wide variety of applications such as self‐powered wearable and flexible electronic systems for health monitoring and indoor robotics.