Photovoltaic Effect Research Articles

Geometric Configuration for Maximizing Photocurrent Collection in Bulk Photovoltaic Effect Devices

Geometric Configuration for Maximizing Photocurrent Collection in Bulk Photovoltaic Effect Devices

Photovoltaic effect in methylammonium lead triiodide single crystal

Due to the crystalline acentricity leading to the bulk photovoltaic effect (PV) the ferroelectrics (FEs) are considered as important candidates for creation of the PV cells overcoming the Shockley-Queisser limit of semiconductors. However, this research direction still requires more investigations to develop reliable pathways for PV efficiency optimization. The recent progress in the power conversion efficiency of the cells based on the organic-based compounds such as CH3NH3PbI3perovskite attracted much attention of the scientists. Unfortunately, manufacturing of these multilayer cells implies a very complicated technology and very high price of the devices. Under such circumstances investigations of the PV effect in the single crystals of FE perovskites look very promising. In this paper we report that due to the sample illumination with intensive UV light, CH3NH3PbI3single crystal is transformed from the pristine antiFE into the FE state. As a result, the PV effect characteristic of the FEs is realized in this material. The theoretically maximal value of the power conversion efficiency in this case was found to be one of the largest among the single crystals of this class of ferroics. We also considered the ways allowing to increase the PV efficiency of the potential solar cells based on such materials.

Giant Bulk Photovoltaic Power Generation in 2D AgBiP2Se6 Crystals

AbstractWith the theoretical high power conversion efficiency (PCE) exceeding the thermodynamic Schockley–Queisser (S–Q) limit, the bulk photovoltaic (BPV) effect, which is manifested in acentric crystals across the entire visual spectrum, holds great potential for next‐generation light‐harvesting devices. Here the abnormally giant second harmonic generation (SHG) activity and BPV response in 2D AgBiP2Se6 crystals with broken inversion symmetry is demonstrated, which can be remarkably enhanced with the thickness downscaling. Based on the vertical device sandwiched with graphene electrodes, the wideband light absorption of 2D AgBiP2Se6 crystals with Eg of 1.49 eV enables giant BPV response in the entire visible spectrum, and efficient utilization of solar energy contributes to large short‐current (≈330 mA cm−2), high PCE (≈0.13%) and EQE (≈12.5%) under 532 nm light illumination. Furthermore, benefitting from the local ion redistribution driven by an in‐plane electric field, the BPV photocurrent generation is effectively enhanced 3 times, yielding an extremely high PCE of 0.18%, according high among the reported 2D acentric crystals. The study reintroduces AgBiP2Se6 to the 2D acentric crystal family and lays the groundwork to develop BPV devices for light‐harvesting applications.

Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications

AbstractSelf‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems, sensing in IoT electronics, facial recognition, health monitoring, optical communication networks, night vision, and biomedical imaging. However, silicon commercial detectors need external power to operate and cooling to suppress large dark currents. This work demonstrates a new class of CMOS‐compatible self‐powered NIR photodetector based on ferroelectric 5‐nm thick ZrO2 films which do not require cooling and therefore have two key advantages over Si, and at the same time have comparable performance metrics. At room‐temperature, under 940 nm wavelength illumination (1.4 mW cm−2 power density, 10 Hz repetition rate), and without any power applied, fast rise and fall times of ≈2 and 4 µs, respectively, are achieved in Al/Si/SiOx/ZrO2/ITO devices, along with responsivity, detectivity and sensitivity values of up to ≈3.4 A W−1, 1.2 × 1010 Jones and 4.2 × 103, respectively, far exceeding all other emerging self‐powered systems. Furthermore, dual‐band NIR detection is shown for different NIR wavelengths, proof‐of‐concept feasibility being demonstrated for the smart identification of NIR targets. Therefore, it is demonstrated, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect, and the ferroelectric effect is a novel method to significantly enhance the performance of CMOS‐compatible ZrO2‐based self‐powered photodetectors in the NIR region.

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe2.

Constructing van der Waals materials with spontaneous out-of-plane polarization through interlayer engineering expands the family of two-dimensional ferroelectrics and provides an excellent platform for enhancing the photoelectric conversion efficiency. Here, we reveal the effect of spontaneous polarization on ultrafast carrier dynamics in rhombohedral stacked bilayer WSe2. Using precise stacking techniques, a 3R WSe2-based vertical heterojunction was successfully constructed and confirmed by polarization-resolved second harmonic generation measurements. Through output characteristics and the scanning photocurrent map under zero bias, we reveal a non-zero short-circuit current in the graphene/3R WSe2/graphene heterojunction region, demonstrating the bulk photovoltaic effect. Furthermore, the out-of-plane polarization enables the 3R WSe2 heterojunction region to achieve an ultrafast intrinsic photoresponse time of approximately 3 ps. The ultrafast response time remains consistent across varying detection powers, demonstrating environmental stability and highlighting the potential in optoelectronic applications. Our study presents an effective strategy for enhancing the response time of photodetectors.

High‐speed and contactless inspection of defective micro‐LEDs through the photovoltaic effect

AbstractThe most significant challenge associated with micro‐light‐emitting‐diode (micro‐LED) displays, which are anticipated to be the next generation of display technology, is the high manufacturing cost. In order to reduce manufacturing costs, it is essential to improve yield. Improving the manufacturing yield of them necessitates the evaluation of micro‐LED chips prior to their installation onto substrates. However, the microsize and large quantity of these chips renders inspection difficult with conventional inspection methods. Herein, we propose a method for inspecting micro‐LED chips by measuring the voltage generated between the anode and cathode due to the photovoltaic effect using a developed proximity capacitance image sensor. As this inspection method does not require the use of probe pins to contact LED electrodes, it enables simultaneous inspection of multiple chips in a short time without causing any damage to the electrodes. In this paper, an experimental system equipped with this sensor was developed to demonstrate the basic measurement principle. Moreover, we demonstrated that more than 50,000 micro‐LED chips with a size of 60 μm × 34 μm can be simultaneously inspected in approximately 2 s.

2D Multifunctional Phototransistor Based on MoTe2/Graphene/SnS0.25Se0.75 Heterostructure with High Photogain and Reconfigurable Polarized Detection

Abstract2D van der Waals (vdWs) heterojunctions exhibit facile fabrication process and tunable optoelectronic properties. However, suppressing interfacial charge traps and multifunctional photoresponse remain significant challenges. Here, the study designs a 2D multifunctional phototransistor based on ambipolar MoTe2/graphene (Gr)/p‐type SnS0.25Se0.75 double vdWs vertical heterostructure via alloy engineering. The middle Gr interlayer is pivotal in reducing interfacial charge traps, facilitating vertical photocarrier transportation, and enhancing light absorption coefficient. Under photogating effect, the trapped electrons in SnS0.25Se0.75 promote the photogating effect, resulting in the maximum photogain of 8084 and specific detectivity (D*) of 8.2 × 1012 Jones. Under photoconductive effect, a high responsivity (R) of 36.9 A W−1 and D* of 7.17 × 1011 Jones are achieved. Under photovoltaic effect, the devices exhibit a remarkable R of 501 mA W−1, D* of 1.4 × 1011 Jones. Notably, a self‐driven photocurrent polarized ratio of 8 under 635 nm is achieved because of the anisotropic nature of SnS0.25Se0.75 and the effective double built‐in electric fields. By varying the gate voltage, the polarization ratio can be modulated from 1 to 2.5, enabling reconfigurable polarized‐sensitive detection. Above all, the designed heterojunction with multifunctional and reconfigurable polarization detection.

Structure and ferroelectric photovoltaic effect modulation in the epitaxial BiFeO3/La0.5Sr0.5CO3 heterostructures

Square-shaped BiFeO3 (BFO) thin films were prepared on SrTiO3 (STO) substrates by off-axis magnetron sputtering using La0.5Sr0.5CoO3 (LSCO) as the bottom electrode, and both LSCO and BFO are perovskite structure. The BFO crystalline quality improves and the grain size becomes larger as the thickness H increases, and both have smaller mean square roughness. The effects of BFO thickness H, light intensity Ip and ambient temperature AT on the ferroelectric photovoltaic effect (FPE) for the Pt/BFO/LSCO heterostructures are significant. With the H increase, the open-circuit voltage Voc and short-circuit current Jsc increase linearly, with Voc up to 0.44 V. The short-circuit current modulation intensity ΔJsc follows the ΔJsc-300>ΔJsc-200>ΔJsc-100 rule. With the Ip increase, Pt/BFO(300nm)/LSCO' Jsc increases linearly, and Voc first increases and then tends to saturation, which satisfies Glass' law. With the AT increases, Voc is linearly decreasing and Jsc shows the law: decreasing→increasing→decreasing. The polarization-modulated FPE mechanism is investigated by analyzing the Pt/BFO/LSCO energy band structure, which is attributed to the coupling effect between the BFO depolarization field (Edp) and the built-in electric field at the interface (EPt/BFO & EBFO/LSCO), and the FPE mechanism is shifted from the interface barrier domination to the ferroelectric polarization domination as H increases.

Unveiling Intrinsic Bulk Photovoltaic Effect in Atomically Thin ReS2.

The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of ∼1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other noncentrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.

Two-Dimensional Topological Ferroelectric Metal with Giant Shift Current.

The pursuit for "ferroelectric metal," which combines seemingly incompatible spontaneous electric polarization and metallicity, has been assiduously ongoing but remains elusive. Unlike traditional ferroelectrics with a wide band gap, ferroelectric (FE) metals can naturally incorporate nontrivial band topology near the Fermi level, endowing them with additional exotic properties. Here, we show first-principles evidence that the metallic PtBi_{2} monolayer is an intrinsic two-dimensional (2D) topological FE metal, characterized by out-of-plane polarization and a moderate switching barrier. Moreover, it exhibits a topologically nontrivial electronic structure with Z_{2} invariant equal to 1, leading to a significant FE bulk photovoltaic effect. A slight strain can further enhance this effect to a remarkable level, which far surpasses that of previously reported 2D and 3D FE materials. Our Letter provides an important step toward realizing intrinsic monolayer topological FE metals and paves a promising way for future nonlinear optical devices.

The Effect оf Laser Radiation оn Functional Properties of MOS Structures

The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.

Optimizing Wide Band Gap Cu(In,Ga)Se2 Solar Cell Performance: Investigating the Impact of "Cliff" and "Spike" Heterostructures.

In recent years, the efficiency of high-efficiency Cu(In,Ga)Se2 (CIGS) solar cells has been significantly improved, particularly for narrow-gap types. One of the key reasons for the enhancement of narrow-gap device performance is the formation of the "Spike" structure at the CdS/CIGS heterojunction interface. Wide-gap CIGS solar cells excel in modular production but lag behind in efficiency compared to narrow-gap cells. Some studies suggest that the "Cliff" structure at the heterojunction of wide-gap CIGS solar cells may be one of the factors contributing to this decreased efficiency. This paper utilizes the SCAPS software, grounded in the theories of semiconductor physics and photovoltaic effects, to conduct an in-depth analysis of the impact of "Cliff" and "Spike" heterojunction structures on the performance of wide band gap CIGS solar cells through numerical simulation methods. The aim is to verify whether the "Spike" structure is also advantageous for enhancing wide-gap CIGS device performance. The simulation results show that the "Spike" structure is beneficial for reducing interfacial recombination, thereby enhancing the VOC of wide-gap cells. However, an electronic transport barrier may form at the heterojunction interface, resulting in a decrease in JSC and FF, which subsequently reduces device efficiency. The optimal heterojunction structure should exhibit a reduced "Cliff" degree, which can facilitate the reduction of interfacial recombination while simultaneously preventing the formation of an electronic barrier, ultimately enhancing both VOC and device performance.

Modelling and simulation in sim 3D software of a solar hybrid cell to using in PV power integration

A photovoltaic cell converts solar energy into electrical energy thanks to the photovoltaic effect. This technology is widely used in land and space applications. Many studies are being carried out to improve the models of these cells and for the proper functioning and to bring them to their maximum potency to be obtained. In this article, we present our photovoltaic cell model and for this we choose a GaAs-based pin cell, our studies carried out at the equilibrium of this cell. We used all our calculations on the SIM 3D simulator carried out in the “Component modelling and circuit design” team. This software is designed to study low geometry design components and to determine the volume of a structure, potential distributions and free carrier densities. The SIM 3D is under development by a group from the Mohamed Tahri University of Bechar. Algeria. We will present our photovoltaic cell model and our SIM 3D software development.

New paradigms of 2D layered material self-driven photodetectors.

By virtue of the high carrier mobility, diverse electronic band structures, excellent electrostatic tunability, easy integration, and strong light-harvesting capability, 2D layered materials (2DLMs) have emerged as compelling contenders in the realm of photodetection and ushered in a new era of optoelectronic industry. In contrast to powered devices, self-driven photodetectors boast a wealth of advantages, notably low dark current, superior signal-to-noise ratio, low energy consumption, and exceptional compactness. Nevertheless, the construction of self-driven 2DLM photodetectors based on traditional p-n, homo-type, or Schottky heterojunctions, predominantly adopting a vertical configuration, confronts insurmountable dilemmas such as intricate fabrication procedures, sophisticated equipment, and formidable interface issues. In recent years, worldwide researchers have been devoted to pursuing exceptional strategies aimed at achieving the self-driven characteristics. This comprehensive review offers a methodical survey of the emergent paradigms toward self-driven photodetectors constructed from 2DLMs. Firstly, the burgeoning approaches employed to realize diverse self-driven 2DLM photodetectors are compiled, encompassing strategies such as strain modulation, thickness tailoring, structural engineering, asymmetric ferroelectric gating, asymmetric contacts (including work function, contact length, and contact area), ferroelectricity-enabled bulk photovoltaic effect, asymmetric optical antennas, among others, with a keen eye on the fundamental physical mechanisms that underpin them. Subsequently, the prevalent challenges within this research landscape are outlined, and the corresponding potential approaches for overcoming these obstacles are proposed. On the whole, this review highlights new device engineering avenues for the implementation of bias-free, high-performance, and highly integrated 2DLM optoelectronic devices.

Switchable Photovoltaic Effect and Robust Nonlinear Optical Response in a High-Temperature Molecular Ferroelectric [C8N2H22][PbI4

Hybrid organic-inorganic molecular ferroelectrics (HOIMFs) have garnered significant attention for their potential applications in nonvolatile memory and spintronic devices. However, few efforts have been devoted to the photoelectric properties of lead halide molecular ferroelectrics, despite the fact that robust ferroelectricity and flexibility are desirable for thin-film photoelectric devices. Herein, we present a novel lead halide molecular ferroelectric [C8N2H22][PbI4] (1) synthesized hydrothermally. A polar monoclinic structure of 1 was solved by single-crystal X-ray diffraction and second-harmonic generation (SHG) tests. A direct band gap of 2.36 eV was confirmed by UV-vis spectrum and theoretical calculation. Hysteresis measurements demonstrated inherent room-temperature (RT) ferroelectricity in 1 with a spontaneous polarization (Ps) of 3.2 μC/cm2. The 1-based photoelectric device shows a notable photovoltaic (PV) effect with Voc ∼ 0.27 V, Jsc ∼ 38 nA/cm2 under AM 1.5 G illumination, and a rapid response time of ∼1.5 ms. A considerable enhancement in PV performance has been achieved by adjusting the ferroelectric polarization, resulting in a maximum Voc ∼ 0.75 V, Jsc ∼ 2.28 μA/cm2. Notably, 1 exhibits a rather large SHG signal, which is approximately 2.61-fold higher than that of KH2PO4 (KDP) upon a 1064 nm laser radiation. This study offers a bright avenue for lead halide molecular ferroelectrics as promising optoelectronic devices and SHG materials.

Manipulation of Cancer Cell Spheroids by Photovoltaic Tweezers: Determination of Their Charge State

Photovoltaic optoelectronic tweezers (PVOT), based on the bulk photovoltaic effect presented by certain ferroelectric crystals, have emerged as a versatile tool to manipulate and/or trap micro‐ and nano‐objects. Very recently, an ingenious method has enabled to extend PVOT manipulation to aqueous solution droplets opening the door to applications in optofluidics and biotechnology. The photovoltaic crystal is placed on the bottom of a cuvette filled with paraffin oil while the droplet is hanging from the air–oil interphase where it is manipulated. Herein, this method is used to investigate the feasibility of manipulating hybrid droplets as carriers containing a cancer multicellular spheroid inside cell culture medium. Droplets of two cancer cell lines, MCF‐7 and U‐87 MG, have been successfully manipulated by light‐induced electrical fields generated in the photovoltaic platform. From the droplet dynamics, which includes attractive and repulsive behaviors from the illuminated crystal region, the charge state of the cell culture medium and the spheroid are investigated. The results show that they are positively and negatively charged, respectively. Moreover, analyzing the migration kinetics of water, cell culture medium, and hybrid droplets, to the light of a proposed theoretical model, the charge density of both cell line spheroids has been estimated.

Ferroelectric Nanomaterials for Energy Harvesting and Self‐Powered Sensing Applications

AbstractThe rapid development of the Internet of Things has introduced new challenges for miniaturized, highly integrated energy harvesters and sensors, promoting the exploration of various novel nanomaterials. Ferroelectric nanomaterials, characterized by large remanent polarization, exceptional dielectric properties, outstanding chemical stability, and diverse electricity generation capabilities, are emerging as promising candidates in a variety of fields. Possessing various mechanisms for electricity generation, including piezoelectric, pyroelectric, photovoltaic, and triboelectric effects, ferroelectric nanomaterials demonstrate their capability for harvesting and sensing multiple energies simultaneously, including light, thermal, and mechanical energies. This capability contributes to the miniaturization and high integration of electronic devices. This article reviews recent achievements in ferroelectric nanomaterials and their applications in energy harvesting and self‐powered sensing. Different categories of ferroelectric nanomaterials, their ferroelectric properties, and fabrication methods are introduced. The working mechanisms and performance of ferroelectric energy harvesters and self‐powered sensors are described. Additionally, future prospects are discussed.

Infrared optoelectronics in twisted black phosphorus

Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices.

A Near-Infrared Retinomorphic Device with High Dimensionality Reservoir Expression.

Physical reservoir-based reservoir computing (RC) systems for intelligent perception have recently gained attention because they require fewer computing resources. However, the system remains limited in infrared (IR) machine vision, including materials and physical reservoir expression power. Inspired by biological visual perception systems, the study proposes a near-infrared (NIR) retinomorphic device that simultaneously perceives and encodes narrow IR spectral information (at ≈980nm). The proposed device, featuring core-shell upconversion nanoparticle/poly (3-hexylthiophene) (P3HT) nanocomposite channels, enables the absorption and conversion of NIR into high-energy photons to excite more photo carriers in P3HT. The photon-electron-coupled dynamics under the synergy of photovoltaic and photogating effects influence the nonlinearity and high dimensionality of the RC system under narrow-band NIR irradiation. The device also exhibits multilevel data storage capability (≥8 levels), excellent stability (≥2000 s), and durability (≥100 cycles). The system accurately identifies NIR static and dynamic handwritten digit images, achieving recognition accuracies of 91.13% and 90.07%, respectively. Thus, the device tackles intricate computations like solving second-order nonlinear dynamic equations with minimal errors (normalized mean squared errorof 1.06 × 10⁻3 during prediction).

Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Advances in symmetry-breaking engineering of heterointerfaces for optoelectronic devices have garnered significant attention due to their immense potential in tunable moiré quantum geometry and enabling polarization light detection. Despite several proposed approaches to breaking the symmetry of low-dimensional materials, there remains a lack of universal methods to create materials with prominent polarization detection capabilities. Here, we introduce a reliable strategy for manipulating the symmetry of low-dimensional materials through a programmable ferroelectric-doping patterns technique. This method introduces a spontaneous photocurrent and enables the detection of linearly polarization light in isotropic 2H-MoTe2. The 2H-MoTe2 photodetector exhibits a significant short-circuit photocurrent intensity (Jsc = 29.9 A/cm2) and open-circuit voltage Voc of 0.12 V ( ~ 3 × 105 V/cm). Under a specific bias, the polarization ratio transitions from 1 to ∞/−∞, shifting from a positive state (unipolar regime) to a negative state (bipolar regime). These findings underscore the potential of ferroelectric-doping patterns as a promising approach to creating composite materials with artificial bulk photovoltaic effect and achieving high-performance polarization light detection.