Photodetectors Research Articles

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure.

High channel current of the high electron mobility transistors (HEMTs) and high relative responsivity of the photodetectors (PDs) were demonstrated in the AlGaN/AlN/GaN channel-stacking epitaxial structures. The interference properties of the X-ray curves indicated high-quality interfaces of the conductive channels. The AlGaN/AlN/GaN interfaces were observed clearly in the transmission electron microscope micrograph. The saturation I ds currents of the HEMT structures were increased by adding a number of channels. The conductive properties of the channel-stacking structures corresponded to the peaks of the transconductance (g m) spectra in the HEMT structures. The depletion-mode one- and two-channel HEMT structures can be operated at the cutoff region by increasing the reverse V gs bias voltages. Higher I ds current in the active state and lower current in the cutoff state were observed in the two-channel HEMT structure compared with one- and three-channel HEMT structures. For the channel-stacking metal-semiconductor-metal photodetector structures, the peak responsivity was observed at almost 300 nm incident monochromic light, which was increased by adding a number of channel layers. The channel current of the HEMT devices and the photocurrent in the PD devices were increased by adding a number of two-dimensional electron gas (2DEG) channels. By using a flat gate metal layer, the two-channel AlGaN/AlN/GaN HEMT structures exhibited a high I ds current, a low cutoff current, and a high peak g m value and have the potential for GaN-based power devices, fast portable chargers, and ultraviolet PD applications.

UV-Vis-NIR Broadband Self-Powered CuInS2/SnO2 Photodetectors and the Application in Encrypted Optical Communication.

Photodetectors (PDs) with broadband photoresponse can meet the demand for multiband detection in complex environments, overcoming the technological complexity issue of integrated narrow-band PDs. Self-powered heterojunction PDs having ultraviolet-visible-near-infrared broadband photoresponse were constructed by using SnO2 nanopillars and CuInS2 nanoflakes. The dimension, crystalline quality, and energy level structure of the SnO2 nanopillars were regulated by changing the concentration of Sn ions in the precursor solution. The optimized interfacial energy band structure of the heterojunction can increase the transfer ability of the photogenerated carrier. The optimum performance is achieved for the CuInS2/SnO2(0.025M) PD prepared at 0.025 M Sn ion concentration in the precursor solution with the responsivities of 1.15, 6.13, and 1.02 mA/W, and detectivities of 1.19 × 1010, 6.35 × 1010, and 1.02 × 1010 Jones under 254 nm solar-blind ultraviolet light, 475 nm visible light, and 940 nm near-infrared light. Furthermore, a proof-of-concept solar-blind ultraviolet-visible-near-infrared encrypted communication system utilizing a broadband self-powered CuInS2/SnO2 PD as the receiving terminal and solar-blind ultraviolet light, ultraviolet light, visible light, and near-infrared light as the carrier and encryption protocol is proposed. The PD has great potential for applications in the field of encrypted optical communication.

Boosting the UV-vis-NIR Photodetection Performance of MoS2 through the Cavity Enhancement Effect and Bulk Heterojunction Strategy.

Navigating more effective methods to enhance the photon utilization of photodetectors poses a significant challenge. This study initially investigates the impact of morphological alterations in 2H-MoS2 on photodetector (PD) performance. The results reveal that compared to layered MoS2 (MoS2 NLs), MoS2 nanotubes (MoS2 NTs) impart a cavity enhancement effect through multiple light reflections. This structural feature significantly enhances the photodetection performance of the MoS2-based PDs. We further employ the heterojunction strategy to construct Y-TiOPc NPs:MoS2 NTs, utilizing Y-TiOPc NPs (Y-type titanylphthalocyanine) as the vis-NIR photosensitizer and MoS2 NTs as the photon absorption enhancer. This approach not only addresses the weak absorption of MoS2 NTs in the near-infrared region but also enhances carrier generation, separation, and transport efficiency. Additionally, the band bending phenomenon induced by trapped-electrons at the interface between ITO and the photoactive layer significantly enhances the hole tunneling injection capability from the external circuit. By leveraging the synergistic effects of the aforementioned strategies, the PD based on Y-TiOPc NPs:MoS2 NTs (Y:MT-PD) exhibits superior photodetection performance in the wavelength range of 365-940 nm compared to MoS2 NLs-based PD and MoS2 NTs-based PD. Particularly noteworthy are the peak values of key metrics for Y:MT-PD, such as EQE, R, and D* that are 4947.6%, 20588 mA/W, and 1.94 × 1012 Jones, respectively. The multiperiod time-resolved photocurrent response curves of Y:MT-PD also surpass those of the other two PDs, displaying rapid, stable, and reproducible responses across all wavelengths. This study provides valuable insights for the further development of photoactive materials with a high photon utilization efficiency.

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (fTMIn). In addition, with the reduction of the fTMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In2O3 thin film with roughness of 0.44 nm is obtained when the fTMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In2O3 thin films with different fTMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the fTMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the fTMIn of 5 sccm possesses a record-high responsivity of 2.53 × 103 AW−1, a high detectivity of 5.43 × 107 Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs.

Compressive sensing–based optical two-frequency continuous wave time-of-flight ranging system

A time-of-flight–based ranging system constructed using an intensity-modulated light source and photodetectors (PDs) is proposed. In the proposed system, the carrier wave, which comprises two cosine waves with different frequencies in the megahertz range, is reconstructed from a few samples obtained using PDs with kilohertz sampling rates using the compressive sensing technique. This allows the system to measure distances with very high accuracy and extends the measurement range while maintaining the accuracy of an existing system that uses a single-frequency carrier.

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs.

InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 μs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.

A theoretical analysis to reveal the prospects of MoS2 as a back surface field layer in TiS3-based near infrared photodetector

In this article, a photodetector based on TiS3 absorber material, featuring a narrow direct bandgap of 1 eV, has been simulated. Throughout this research, the J-V (current–voltage) curves and spectral responses have been explored by systematically varying the thickness, doping concentration, and defect density of specific layers. The JSC (short circuit current) and VOC (open circuit voltage) of the heterostructure photodetector are found to be 45.77 mA cm−2 and 0.693 V respectively. Also, the responsivity (R) and detectivity (D*) are 0.81 A W−1 and 2.19 × 1014 Jones at a light wavelength of 1100 nm. The spectral response exhibits significantly elevated values within the wavelength range of 800 nm to 1200 nm, indicating the device’s ability to detect light in the near-infrared (NIR) region effectively. The novel research offers valuable insights, emphasizing the material’s suitability for photodetector (PD) applications and signaling a promising direction for further research interest in photodetector development.

Ultrathin Non‐van der Waals Chromium Sulfide: Liquid Phase Exfoliation, Characterization, and Self‐Powered Photoelectrochemical Photodetector Application

AbstractIn the search for new advanced 2D materials for technological applications and to expand the research of non‐van der Waals (non‐vdW) 2D electronic devices, this study presents a novel strategy for liquid phase exfoliation (LPE) of non‐vdW Cr2S3 to produce Cr2S3 nanosheets (NSs). By utilizing N‐methyl‐2‐pyrrolidone (NMP), bulk Cr2S3 is separated along the (001) plane, resulting in the formation of NSs with an average thickness of ≈3 nm. Various characterization techniques are applied to the Cr2S3 material before and after LPE. Subsequently, the obtained Cr2S3 NSs are integrated into a photoelectrochemical (PEC)‐type photodetector (PD) to evaluate the photoelectric conversion efficiency under varying conditions. The findings indicate that the developed PD exhibits a distinct self‐powered photodetection capability with a photocurrent (Pph) of 39.5 nA cm−2, a photoresponsivity (Rph) of 622 nA W−1, and a detectivity (D*) of 0.5 × 107 Jones under 350 nm irradiation at 0 V. Moreover, the PD demonstrates rapid response time (0.06 s) and good long‐term stability (over 15 days), thus providing valuable insight for the advancement of non‐vdW Cr2S3‐based optoelectronic devices.

Modern innovations in the provision and efficient application of 2D inorganic nanoscale materials

Abstract Two-dimensional nanoscale materials (2D NMs) have exceptional physical characteristics, distinctive structures, and customizable surface chemistry. They consist of infinite transverse dimensions of near-atomic thickness or atoms. They promise advancements in catalysis, renewable energy, and sensing. An extensive summary of the most recent research results on the creation and use of 2D NMs is provided in this work. It is possible to modify the characteristics of these multi-layered materials by means of chemical and physical manipulations. Due to their layer-dependent electrical properties, certain 2D layered inorganic nanomaterials such as MoS2, WS2, and SnS2 have recently been created and used in a variety of applications, including new sensors. In addition, the article delves into the difficulties confronted by sectors reliant on nanotechnology as well as the potential future uses of nanostructures coupled with electrochemical systems. The article begins by outlining the typical “top-down” and “bottom-up” approaches for synthesizing 2D NMs. These approaches include hydrothermal procedures, ion intercalation, mechanical exfoliation, liquid-phase exfoliation assisted by ultrasonic waves, and chemical vapor deposition. 2D NMs are the focus of this work because of their potential applications in gas sensing, photocatalysis, electrocatalysis, photo detection, and electromagnetic wave absorption. In addition, the study predicts patterns of future development and possible issues with 2D NMs based on existing studies. Increased demand for cost-effective, environmentally friendly, and highly connected products is propelling the ongoing research and development of these high-performance materials. This research is significant since it summarizes, in one place, the most recent advances in 2D NM preparation methods and applications.

High responsivity photodetector based on MEH-PPV/CsPbBr3 heterojunction

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr3 heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr3 perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr3 heterojunction improves the energy level arrangement, and CsPbBr3 QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity (R) of MEH-PPV/CsPbBr3 heterojunction PD is 11.98 A W−1, the specific detectivity (D*) is 6.98 × 1011 Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices.

High-performance solar-blind photodetectors based on Ta-doped ZnSnO3 single crystal thin films

High-quality Ta-doped ZnSnO3 single crystal thin films were grown on LiTaO3 substrates by pulsed laser deposition (PLD) method, and the effects of Ta doping on the lattice structure, surface morphology, electronic structure and photodetector performance of ZnSnO3 thin films are studied in detail. When the Ta doping content is 1 %, the [0001]-oriented ZnSnO3 thin film present the highest quality, which the optical band gap (3.75 eV), the smoothest surface roughness (0.83 nm), and the biggest carrier concentration (4.03 × 1019 cm−3). For the solar-blind photodetectors (PDs), based on these excellent characteristics, the 1 % Ta-doped ZnSnO3 PD exhibits large light-to-dark current ratio (>103), responsivity (21.37 A/W), detectivity ((3.63±0.71) ×1011 Jones) and external quantum efficiency (∼1.04× 104 %) under 254 nm UV light at an applied bias of 5 V. This study suggests that Ta doping can effectively improve the optoelectronic performance of ZnSnO3 PDs, laying the foundation for their application.

Design of an integrable double-sided optoplasmonic gyroscope via a bent hybrid structure

This paper presents an optoplasmonic gyroscope that employs a novel bent-hybrid structure, and works double-sided. The proposed device is integrable without moving parts, and simply has a robust configuration. The detection mechanism is based on surface plasmon polaritons (SPPs), and the sensor consists of a laser, a bent-metal layer, and a photo-detector (PD). Based on the simulations, the proposed gyroscope provides significant characteristics of a measurement range of ± 45000°/s, an optical sensitivity of 6.025 µ/(°/s), a total sensitivity of 2.41 µA/W(°/s), an ultra-high resolution ability of 16.598 µ°/s, and an accuracy of 99.999%. The dimensions are 5 × 5 × 5 µm3, and the measurement time is 1 ms. The operational wavelength is at visible range of λ = 630 nm. Additionally, the effects of various parameters, including metal material, metal thickness, and laser wavelength, on the gyroscope performance are comprehensively studied.

3D Modelling Approach to Enhance the Characterization of a Bronze Age Nuragic Site

Megalithism in Sardinia (Italy) had its highest expression during the Bronze Age with the creation of monumental complexes known as Nuraghes. These unique monuments have recently been the subject of in-depth investigations for their potential to be recognized as World Heritage Sites (by UNESCO). The main purpose of our research was to make a contribution to obtain a more in-depth characterization of these monuments by testing a 3D model of a complex Nuraghe, integrated with an analysis of the geolithological context. This work first focused on the geological and typological investigation of the materials used in its construction, which was then compared with the geolithological characteristics of the region. A survey of the outcropping remains was carried out by means of Structure-from-Motion Multi-View Stereo (SfM-MVS) photogrammetry with UAV ground and aerial acquisition using APS-C photo sensors, georeferenced with an RTK-GNSS ground survey. The level of accuracy of our digital models shows the potential of the proposed method, giving accurate and geometrically consistent 3D reconstructions in terms of georeferencing error, shape and surface. The survey method allows for the virtualization of the current state of conservation of the Nuraghe, giving a solid basis to set up further (future) archaeological excavations and to contribute to knowledge on the architecture of the structures. This study also provides useful information on the nature and origin of the construction materials and proposes a hypothesis on the original dimensions of the monument, which is often a topic of debate in the world of archaeology.

Improving ZnO ultraviolet Schottky photodetectors by inserting a MoS2 layer

ZnO Schottky junction photodetectors (PDs) has become a research focus due to their wide application, high-performance and low-cost. However, their development has been limited by the low photo-response. Two-dimensional MoS2 exhibit numerous advantages, including a tunable band gap, a strong exciton effect, and broadband absorption. In this work, we incorporate MoS2 into ZnO thin films using a simple spin-coating method to create Schottky ultraviolet (UV) PDs that show a remarkably increased responsivity (by 885%) and a substantially improved photo-current (by one order of magnitude). Furthermore, they exhibit a relatively low noise equivalent power (5.11×10−13 W) and a high normalized detectivity 2.96×1011 Jones. This outstanding performance can be attributed to the enhanced absorption and efficient charge transfer of ZnO film after introduction of MoS2 layer. In this study, an easy method is presented for creating high-performance ZnO Schottky PDs.

PbS/ Si NW Heterojunction on Silicon Chip Based Self-Powered Photo Detector Device for IR Radiations by Chemical Bath Deposition

PbS/ Si NW Heterojunction on Silicon Chip Based Self-Powered Photo Detector Device for IR Radiations by Chemical Bath Deposition

Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon

There is an increasing need for silicon-compatible high-bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address several technological bottlenecks in detection and ranging, surveillance, ultrafast spectroscopy, and imaging. In fact, current e-SWIR high-bandwidth PDs are predominantly made of III–V compound semiconductors and thus are costly and suffer a limited integration on silicon besides a low responsivity at wavelengths exceeding 2.3 μm. To circumvent these challenges, Ge1−xSnx semiconductors have been proposed as building blocks for silicon-integrated high-speed e-SWIR devices. Herein, this study demonstrates vertical all-GeSn PIN PDs consisting of p-Ge0.92Sn0.08/i-Ge0.91Sn0.09/n-Ge0.89Sn0.11 and p-Ge0.91Sn0.09/i-Ge0.88Sn0.12/n-Ge0.87Sn0.13 heterostructures grown on silicon following a step-graded temperature-controlled epitaxy protocol. The performance of these PDs was investigated as a function of the device diameter in the 10–30 μm range. The developed PD devices yield a high bandwidth of 12.4 GHz at a bias of 5 V for a device diameter of 10 μm. Moreover, these devices show a high responsivity of 0.24 A/W, a low noise, and a 2.8 μm cutoff wavelength, thus covering the whole e-SWIR range.

Detecting Visible to Near-Infrared II Light via CsPbBr3 Nanocrystals/Y6 Heterojunctions.

In the endeavor to develop advanced photodetectors (PDs) with superior performance, all-inorganic perovskites, recognized for their outstanding photoelectric properties, have emerged as highly promising materials. Due to their unique electronic structure and band characteristics, the majority of all-inorganic perovskite materials are not sensitive to near-infrared (NIR) light. Here, we demonstrate the fabrication of a high-performance broadband PD comprising CsPbBr3 perovskite NCs/Y6 planar heterojunctions. The incorporation of Y6 not only facilitates charge transfer from CsPbBr3 NCs to Y6 for enhancing photodetection performance under visible illumination but also broadens the absorption spectrum range of the whole device toward the NIR regime. As a result, the heterojunction PD exhibits a photo-to-dark-current ratio above 105, a dynamic range of 149.5 dB, and an impressive lowest detection limit of incident power density of 1.6 nW/cm2 under 505 nm illumination. In the NIR regime, where photon energy is below the bandgap of CsPbBr3, electron-hole pairs can still be produced in the Y6 layer even when illuminated at 1120 nm. Consequently, photodetection is uniquely possible in PDs that incorporate heterojunctions when the illumination wavelength is longer than 565 nm. At 850 nm, the heterojunction device is capable of detecting light with power densities as low as 1.3 μW/cm2 corresponding to a LDR of 99.8 dB. The exceptional performance is attributed to the creation of a heterojunction between CsPbBr3 NCs and Y6. These findings propose a novel approach for developing broadband PDs based on perovskite NC materials.

Non-invasive Blood Glucose Monitoring System

The project presents a novel approach to blood glucose monitoring, offering a non-invasive and pain-free method for individuals with diabetes to track their glucose levels. The system utilizes advanced sensor technology coupled with signal processing techniques to detect glucose levels in the body without the need for traditional needle pricking. The key components of the system include a power supply, voltage regulator, ESP32 microcontroller, LCD display, photo sensor, amplifier circuit, and linearization circuit, all seamlessly integrated to provide accurate and real-time glucose readings. This breakthrough technology holds great promise in revolutionizing diabetes management, enhancing the quality of life for millions of affected individuals.By placing the sensor on the individual’s hand, the Glucometer system employs a combination of photonic and electronic principles to non-invasively measure glucose levels. The photo sensor captures specific wavelengths of light that interact with glucose molecules within the tissue, generating a signal proportional to the glucose concentration. This signal is then amplified and processed through the integrated circuits, ensuring accurate linearization and calibration. The ESP32 microcontroller orchestrates these operations, facilitating seamless communication with the LCD display to present the glucose reading in a clear and user-friendly format.The Glucometer’s innovative design eliminates the discomfort associated with traditional blood sampling methods, making it a highly accessible and convenient tool for diabetes management. The system’s efficiency in providing accurate glucose readings without the need for invasive procedures represents a significant advancement in healthcare technology. With further development and refinement, the Glucometer holds the potential to significantly enhance the daily lives of individuals living with diabetes, offering a reliable and painless means of monitoring blood glucose levels.

Photonic-assisted wideband microwave frequency measurement based on optical heterodyne detection

A photonic-assisted microwave frequency measurement (MFM) method based on optical heterodyne detection is proposed and experimentally demonstrated. In the proposed MFM system, a linearly chirped optical waveform (LCOW) from a three-electrode distributed Bragg reflector laser diode (DBR-LD) and a multi-wavelength signal from a Mach-Zehnder modulator (MZM), where the signal under test (SUT) is modulated on an optical carrier from a distributed feedback laser diode (DFB-LD), are heterodyne detected by the photodetector (PD). A bandpass filter then filters the detected signal, and the envelope is detected by an oscilloscope. Then, frequency-to-time mapping is realized, and the signal frequency is measured. Thanks to the fast tuning rate and large tuning range of the DBR-LD, the proposed MFM system has a high measurement speed and a broad instantaneous measurement bandwidth. In the experimental demonstration, a measurement error below 39.1 MHz is achieved at an instantaneous bandwidth of 20 GHz and a measurement speed of 1.12 GHz/µs. The MFM of a frequency-hopping signal is also experimentally demonstrated. The successful demonstration of the MFM system with a simple structure provides a new optical solution for realizing broadband and fast microwave frequency measurements.

Scalable flexible and stretchable high performance UV photodetector based on MoS2-WO3/Ag composite on a PU substrate by utilizing LIG electrodes

The rapid advancements in photodetector device technologies have captivated the optoelectronic industry owing to their strong features, such as wearability, stretchability, energy efficiency, scalability and cost-effectiveness. However, there is still scope for enhancement in device performance, reliability, and scalable fabrication. In this research work, we have proposed a novel strategy for fabricating stretchable ultraviolet (UV) photodetector (PD) on a polyethylene glycol solution-processed synthesis of MoS2-WO3/Ag composite-based nanocrystals onto a polyurethane (PU) substrate. Moreover, laser induced graphene (LIG) interdigitated electrode arrays for swift photogenerated charge extraction due to their high conductivity. The device displays high photoresponsivity, external quantum efficiency, and specific detectivity, measured at 6.84 A/W, 143 %, and 2.87×1011 Jones, respectively. Additionally, the device demonstrates a quick response time of 80 ms when exposed to 360 nm light, indicating its high speed. These essential advantages have a great potential for applications in real life and mass production. The integration of advanced materials and LIG electrodes enhances the device capability for next-generation stretchable, flexible and wearable electronic devices.