In our previous papers, we have considered the energy and quasi-momentum focusing patterns [1] (hereafter referred to as I) and the image of crystalline GaAs obtained by the phonon-drag effect in GaAs—AlGaAs heterostuctures [2]. All of these patterns were obtained for sources of pulses of monochromatic phonons. Τhe duration time of these pulses was taken as the shortest of the characteristic times • in the considered problem. However, most experiments are performed not for pulses of monochromatic phonons but for heat pulses. Additionally, the time of duration of pulses may not be the shortest time characterizing the generation, propagation and detection of pulsed phonon beams. Therefore our approach should be generalized. In this paper we shall show that the kinetic approach, based on the use of the Boltzmann equation, can be used for the description of experiments with the use of heat pulses. Since mechanisms for the generation of phonon beams seem not yet properly understood we construct the source terms of the Boltzmann equation using arguments based on dimensional analysis and imposing suitable normalization conditions [1, 2, 3]. Let us briefly describe the experiment performed by Huebener and collaboration [4, 5] and Dietsche et al. [6]. All of these experiments were performed at an ambient temperature Τ much lower than the Debye temperature θD. Thus the thermal phonons were frozen out. Huebener et al. studied the energy focusing patterns of [001] oriented single crystalline Ge [4] and GaAs samples in the form of wafer discs. The diameters of these discs were several times greater than their thickness (1-2 mm). Τhe top