Phonon Branches Research Articles

The Impact of Hydrostatic Pressure on the Structural, Mechanical, Thermal, and Optoelectronic Characteristics of the RbV3Sb5 Kagome Compound: Ab initio Approach.

We studied the RbV3Sb5 kagome compound's structural, mechanical, thermal, and optoelectronic properties. Mulliken and Hirshfeld population analysis found ionic and covalent connections in RbV3Sb5. The Born stability criterion shows that pure RbV3Sb5 is mechanically stable. The precise measurement of 3.96 indicates that our sample has higher machinability at 20 GPa. Low anticipated hardness of RbV3Sb5 suggests it can be used as a soft solid lubricant. Hardness ratings rise with pressure, however there are exceptions. Pressure causes large nonmonotonic changes in RbV3Sb5's anisotropic characteristics. A comparable 20 GPa Zener anisotropic value, RbV3Sb5 has the highest. The structure's projected Debye temperature at 0 GPa is 284.39 K, indicating softness. Dispersion curves with negative frequencies suggest ground state structural dynamical instability. The structure has no negative-energy phonon branches under 10 GPa stress. From band structure and density of state analysis, the structure behaves metallically under hydrostatic pressure. Also, the structure has maximal ultra-violet conductivity and absorption. The absorption coefficient, conductivity, and loss function plots show uniform patterns at all pressures. As pressure rises, these graphs' peaks blue shift.

Evolution from a charge-ordered insulator to a high-temperature superconductor in Bi2Sr2(Ca,Dy)Cu2O8+δ

How Cooper pairs form and condense has been the main challenge in the physics of copper-oxide high-temperature superconductors. Great efforts have been made in the ‘underdoped’ region of the phase diagram, through doping a Mott insulator or cooling a strange metal. However, there is still no consensus on how superconductivity emerges when electron-electron correlations dominate and the Fermi surface is missing. To address this issue, here we carry out high-resolution resonant inelastic X-ray scattering and scanning tunneling microscopy studies on prototype cuprates Bi2Sr2Ca0.6Dy0.4Cu2O8+δ near the onset of superconductivity, combining bulk and surface, momentum- and real-space information. We show that an incipient charge order exists in the antiferromagnetic regime down to 0.04 holes per CuO2 unit, entangled with a particle-hole asymmetric pseudogap. The charge order induces an intensity anomaly in the bond-buckling phonon branch, which exhibits an abrupt increase once the system enters the superconducting dome. Our results suggest that the Cooper pairs grow out of a charge-ordered insulating state, and then condense accompanied by an enhanced interplay between charge excitations and electron-phonon coupling.

Nanoscale heat conduction properties of graphene at different phonon branches

Nanoscale heat conduction properties of graphene at different phonon branches

Lattice Dynamics of Quasi-2D Perovskites from First Principles.

We present the vibrational properties and phonon dispersion for quasi-2D hybrid organic-inorganic perovskites (BA)2CsPb2I7, (HA)2CsPb2I7, (BA)2(MA)Pb2I7, and (HA)2(MA)Pb2I7 calculated from first principles. Given the highly complex nature of these compounds, we first perform careful benchmarking and convergence testing to identify suitable parameters to describe their structural features and vibrational properties. We find that the inclusion of van der Waals corrections on top of generalized gradient approximation (GGA) exchange-correlation functionals provides the best agreement for the equilibrium structure relative to experimental data. We also investigate the impact of the molecular orientation on the equilibrium structure of these layered perovskite systems. Our results suggest ground state ferroelectric alignment of molecular dipoles in the out-of-plane direction is unlikely and support the assignment of the centrosymmetric space group for the low-temperature phase of (HA)2(MA)Pb2I7. Finally, we compute vibrational properties under the harmonic approximation. We find that stringent energy cut-offs are required to obtain well-converged phonon properties, and once converged, the harmonic approximation can capture key physics for such a large, hybrid inorganic-organic system with vastly different atom types, masses, and interatomic interactions. We discuss the obtained phonon modes and dispersion behavior in the context of known properties for bulk 3D perovskites and ligand molecular crystals. While many vibrational properties are inherited from the parent systems, we also observe unique coupled vibrations that cannot be associated with vibrations of the pure constituent perovskite and ligand subphases. Energy dispersion of the low energy phonon branches primarily occurs in the in-plane direction and within the perovskite subphase and arises from bending and breathing modes of the equatorial Pb-I network within the perovskite octahedral plane. The analysis herein provides the foundation for future investigations on this class of materials, such as exciton-phonon coupling, phase transitions, and general temperature-dependent properties.

Impurity modes in two-dimensional strongly coupled complex plasma crystals

Complex plasma fluctuation processes have been extensively studied in many aspects, especially lattice waves in strongly coupled plasma crystals, which are of great significance for understanding fundamental physical phenomena. A challenge of experimental investigations in two-dimensional strongly coupled complex plasma crystals is to keep the main body and foreign particles of different masses on the same horizontal plane. To solve the problem, we have proposed a potential well formed by two negatively biased grids to bind the negatively charged particles in a two-dimensional (2D) plane, thus achieving a 2D plasma crystal in the microgravity environment. The study of such phenomena in complex plasma crystals under microgravity environment then becomes possible. In this paper, we focus on the continuum spectrum, including both phonon and optic branches of the impurity mode in a 2D system in microgravity environments. The results show the dispersion relation of the longitudinal and transverse impurity oscillation modes and their properties. Considering the macroscopic visibility of complex mesoscopic particle lattices, theoretical and experimental studies on this kind of complex plasma systems will help us further understand the physical nature of a wide range of condensed matters.

Codebase release r0.3 for SmoQyDQMC.jl

We introduce the SmoQyDQMC.jl package, a Julia implementation of the determinant quantum Monte Carlo algorithm. SmoQyDQMC.jl supports generalized tight-binding Hamiltonians with on-site Hubbard and generalized electron-phonon (ee-ph) interactions, including non-linear ee-ph coupling and anharmonic lattice potentials. Our implementation uses hybrid Monte Carlo methods with exact forces for sampling the phonon fields, enabling efficient simulation of low-energy phonon branches, including acoustic phonons. The SmoQyDQMC.jl package also uses a flexible scripting interface, allowing users to adapt it to different workflows and interface with other software packages in the Julia ecosystem. The code for this package can be downloaded from our GitHub repository at https://github.com/SmoQySuite/SmoQyDQMC.jl or installed using the Julia package manager. The online documentation, including examples, can be obtained from our document page at https://smoqysuite.github.io/SmoQyDQMC.jl/stable/.

SmoQyDQMC.jl: A flexible implementation of determinant quantum Monte Carlo for Hubbard and electron-phonon interactions

We introduce the SmoQyDQMC.jl package, a Julia implementation of the determinant quantum Monte Carlo algorithm. SmoQyDQMC.jl supports generalized tight-binding Hamiltonians with on-site Hubbard and generalized electron-phonon (ee-ph) interactions, including non-linear ee-ph coupling and anharmonic lattice potentials. Our implementation uses hybrid Monte Carlo methods with exact forces for sampling the phonon fields, enabling efficient simulation of low-energy phonon branches, including acoustic phonons. The SmoQyDQMC.jl package also uses a flexible scripting interface, allowing users to adapt it to different workflows and interface with other software packages in the Julia ecosystem. The code for this package can be downloaded from our GitHub repository at https://github.com/SmoQySuite/SmoQyDQMC.jl or installed using the Julia package manager. The online documentation, including examples, can be obtained from our document page at https://smoqysuite.github.io/SmoQyDQMC.jl/stable/.

Tunable Chemochromism and Elastic Properties in Intercalated MoO3: Au-, Cr-, Fe-, Ge-, Mn-, and Ni-MoO3.

Chemical tunability of the elastic constants of α-MoO3, a two-dimensional layered oxide, is demonstrated with mutability on the order of tens of GPa, simply by choice of a metal intercalant including Au, Cr, Fe, Ge, Mn, and Ni. Using Brillouin laser light scattering from confined acoustic phonons in nanometer-thick materials, the in-plane angular dispersion of the quantized acoustic phonon branches of 2D layered, intercalated MoO3 is measured and used to determine the bulk modulus (K), Young's moduli (E11, E22, and E33), each of the nine independent elastic tensor elements (cij), and the thickness. Intercalation of metals generally reduces the anisotropy in MoO3 except in Ge-MoO3, for which the in-plane longitudinal elastic anisotropy is unaffected. Chemochromism from transparent white (MoO3 and Fe-MoO3) to near black (Ni-MoO3) to brilliant dark blue (Ge-MoO3) is demonstrated and is associated with a reduction in electronic band gap with intercalation and an increase in absorption >600 nm for some intercalants (Cr-, Ge-, and Mn-MoO3).

Structure Low Dimensionality and Lone-Pair Stereochemical Activity: the Key to Low Thermal Conductivity in the Pb-Sn-S System.

Recently, metal sulfides have begun to receive attention as potential cost-effective materials for thermoelectric applications beyond optoelectronic and photovoltaic devices. Herein, based on a comparative analysis of the structural and transport properties of 2D PbSnS2 and 1D PbSnS3, we demonstrate that the intrinsic effects that govern the low lattice thermal conductivity (κL) of these sulfides originate from the combination of the low dimensionality of their crystal structures with the stereochemical activity of the lone-pair electrons of cations. The presence of weak bonds in these materials, responsible for phonon scattering, results in inherently low κL of 1.0 W/m K in 1D PbSnS3 and 0.6 W/m K in 2D PbSnS2 at room temperature. However, the nature of the thermal transport is quite distinct. 1D PbSnS3 exhibits a higher thermal conductivity with a crystalline-like peak at low temperatures, while 2D PbSnS2 demonstrates glassy thermal conductivity in the entire temperature range investigated. First-principles density functional theory calculations reveal that the presence of antibonding states below the Fermi level, especially in PbSnS2, contributes to the very low κL. In addition, the calculated phonon dispersions exhibit very soft acoustic phonon branches that give rise to soft lattices and very low speeds of sounds.

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite numerous efforts made to simulate the structural, electronic, and dynamical properties of binary materials, no vibrational and/or thermodynamic studies exist for the ternary alloys. By adopting a realistic rigid-ion-model (RIM), we have reported methodical calculations to comprehend the lattice dynamics and thermodynamic traits of both binary and ternary compounds. With appropriate interatomic force constants (IFCs) of XC at ambient pressure, the study of phonon dispersions ωjq→ offered positive values of acoustic modes in the entire Brillouin zone (BZ)—implying their structural stability. For XxY1−xC, we have used Green’s function (GF) theory in the virtual crystal approximation to calculate composition x, dependent ωjq→ and one phonon density of states gω. With no additional IFCs, the RIM GF approach has provided complete ωjq→ in the crystallographic directions for both optical and acoustical phonon branches. In quasi-harmonic approximation, the theory predicted thermodynamic characteristics (e.g., Debye temperature ΘD(T) and specific heat Cv(T)) for XxY1−xC alloys. Unlike SiC, the GeC, SnC and GexSn1−xC materials have exhibited weak IFCs with low [high] values of ΘD(T) [Cv(T)]. We feel that the latter materials may not be suitable as fuel-cladding layers in nuclear reactors and high-temperature applications. However, the XC and XxY1−xC can still be used to design multi-quantum well or superlattice-based micro-/nano devices for different strategic and civilian application needs.

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

AbstractAs a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

Integrated Multi‐Color Raman Microlasers with Ultra‐Low Pump Levels in Single High‐Q Lithium Niobate Microdisks

AbstractIntegrated Raman microlasers, particularly discrete multi‐color lasers which are crucial for extending the emission wavelength range of chip‐scale laser sources to much shorter wavelengths, are highly in demand for various spectroscopy, microscopy analysis, and biological detection applications. However, integrated multi‐color Raman microlasers have yet to be demonstrated because of the requirement of high‐Q microresonators possessing large χ(2) nonlinearity, strong Raman phonon branches, and the challenge in the cavity‐enhanced multi‐photon hyper‐Raman scattering parametric process. In this work, integrated multi‐color Raman lasers have been demonstrated for the first time at weak pump levels, via the excitation of high‐Q (> 6 × 106) phase‐matched modes in single thin‐film lithium niobate (TFLN) microresonators by dispersion engineering. Raman lasing is observed at 1712 nm for a 1547‐nm pump threshold power of only 620 µW, representing the state of the art in the TFLN platform. Furthermore, multi‐color Raman lasers are realized at discrete wavelengths of 1712, 813, 533, and 406 nm with pump levels as low as 1.60 mW, which is more than two orders of magnitude lower than the current records (i.e., 200 mW) in bulk resonators, allowed by the fulfillment of the requisite conditions consisting of broadband natural phase match, multiple‐resonance, and high‐Q factors.

Anisotropic phonon properties in SiP2 monolayer: A first-principles study

Recently, the micromechanical exfoliation method has effectively separated the two-dimensional (2D) SiP2 flake, which exhibits superior performance in field-effect transistors and photodetectors. In this paper, first-principles calculations were utilized to investigate the phononic properties of a SiP2 monolayer, which would be significant to explain the thermal deformation of 2D SiP2-based devices. We found that the acoustic phonon branches of SiP2 monolayer demonstrate significant in-plane anisotropy. The anisotropic ratios for the group velocities are 2.41 and 1.66 for the longitudinal and transverse acoustic modes, respectively. Meanwhile, the anisotropic ratio of the negative thermal expansion coefficient only considering the contribution from acoustic phonons is 0.14, while this ratio is ∼0.279 occurs at 120 K when both acoustic and optical phonons are taken into account. For the Raman-active optical phonons, the largest Grüneisen constant of these Raman-active phonons reaches 22.76, while the largest anisotropic ratio of phonon frequency is up to 2.16. To interpret this significant in-plane anisotropy, we calculated the electron density distribution, crystal orbital Hamilton populations (COHP) and interatomic force constants (IFCs), and found the maximal IFC in the x-direction is 5.79 times greater than y-direction, suggesting it as a major origin of the phononic anisotropy.

The effect of optical-acoustic phonon coupling on the thermal conductivity of 2D MgI2.

2D MgI2 has a large phonon band gap and strong coupling of optical and acoustic phonons, and it is difficult to accurately predict thermal conductivity by considering only three-phonon scattering. Thus, in this study, the effect of four-phonon scattering on the thermal conductivity of a 2D MgI2 lattice was investigated using first-principles calculations combined with Boltzmann transport theory. The results show that with increasing temperature, four-phonon scattering induces an increase in the scattering of phonons at the optical and acoustic phonon coupling (2 THz), as well as in the vicinity of the optical phonon branch (4.5 THz), which leads to the enhancement of the anharmonicity of phonon transport and results in a decrease in the thermal conductivity of the 2D material. At 700 K, the thermal conductivity of MgI2 decreases by over half, from 0.47 W m-1 K-1 to 0.23 W m-1 K-1, when considering both three- and four-phonon scattering, compared to considering only three-phonon scattering. This study confirms the need to consider the role of four-phonon scattering to enhance optical and acoustic phonon coupling to accurately predict the thermal conductivity of 2D materials with larger phonon band gaps.

Intrinsic ultralow lattice thermal conductivity in lead-free halide perovskites Cs3Bi2X9 (X = Br, I).

Lead-free halide perovskites have recently garnered significant attention due to their rich structural diversity and exceptionally ultralow lattice thermal conductivity (κL). Here, we employ first-principles calculations in conjunction with self-consistent phonon theory and Boltzmann transport equations to investigate the crystal structure, electronic structure, mechanical properties, and κLs of two typical vacancy-ordered halide perovskites, denoted with the general formula Cs3Bi2X9 (X = Br, I). Ultralow κLs of 0.401 and 0.262 W mK-1 at 300 K are predicted for Cs3Bi2Br9 and Cs3Bi2I9, respectively. Our findings reveal that the ultralow κLs are mainly associated with the Cs rattling-like motion, vibrations of halide polyhedral frameworks, and strong scattering in the acoustic and low-frequency optical phonon branches. The structural analysis indicates that these phonon dynamic properties are closely relevant to the bonding hierarchy. The presence of the extended Bi-X antibonding states at the valence band maximum contributes to the soft elastic lattice and low phonon group velocities. Compared to Cs3Bi2Br9, the face-sharing feature and weaker bond strength in Cs3Bi2I9 lead to a softer elasticity modulus and stronger anharmonicity. Additionally, we demonstrate the presence of wave-like κC in Cs3Bi2X9 by evaluating the coherent contribution. Our work provides the physical microscopic mechanisms of the wave-like κC in two typical lead-free halide perovskites, which are beneficial to designing intrinsic materials with the feature of ultralow κL.

A van der Waals p-n heterostructure of GaSe/SnS2: a high thermoelectric figure of merit and strong anisotropy.

In recent years, van der Waals heterostructures (vdWHs) with controllable and peculiar properties have attracted extensive attention in the fields of electronics, optoelectronics, spintronics and electrochemistry. However, vdWHs with good thermoelectric performance are few due to the complex coupling of thermoelectric coefficients. Here, we employ density functional theory and Boltzmann's transport equation to explore the thermoelectric properties of the p-n vdWH of GaSe/SnS2, which has been experimentally observed to exhibit high performance as an optoelectronic device. We reveal that GaSe/SnS2 possesses strong anisotropy in terms of electronic transport resulting from the anisotropic carrier relaxation time. The longer carrier relaxation time in the y-direction for n-type induces a high power factor of 0.084 W m-1 K-2 at 300 K, while it is only 0.0087 W m-1 K-2) in the x-direction. The strong coupling of low-mid frequency phonon branches and the relatively weak Sn-S bond-induced anharmonicity hinder the phonon transport, which results in the lattice thermal conductivity of GaSe/SnS2 (14.61 and 15.43 W m-1 K-1 along the x- and y-directions at 300 K) being much smaller than the average value of GaSe and SnS2 (43.44 W m-1 K-1 at 300 K). The optimal thermoelectric figure of merit at 700 K for GaSe/SnS2 reaches 2.99, which is significantly higher than those of the constituents of GaSe (0.58) and SnS2 (1.04). The present work highlights the potential thermoelectric applications and the understanding of the thermoelectric transport mechanism for the recently synthesized p-n vdWH of GaSe/SnS2 with a high thermoelectric figure of merit and strong anisotropy.

Raman fingerprint of the graphene buffer layer grown on the Si‐terminated face of 4H‐SiC(0001): Experiment and theory

AbstractIn this work, we present the results of measurements of the Raman spectrum of the √3x√3R30° reconstruction of graphene grown on 4H‐SiC(0001), the so‐called buffer layer. The extracted Raman spectrum of the buffer layer shows bands, different from those of graphene, which can be attributed to the interaction of the buffer layer with the SiC substrate. In particular, in the high‐wavenumber region, at least three bands are observed in the wavenumber regions 1,350–1,420, 1,470–1,490 and 1,520–1,570 cm−1. The assignment of the buffer layer bands is supported here by tight‐binding simulations of the one‐phonon density of states for structures with a sufficiently large number of Si‐C bilayers for reaching convergence. The converged phonon density of states is found to be in semi‐quantitative agreement with the latter two bands, and therefore, the tight‐binding predictions of the lattice dynamics of the structure can be used for their assignment to buffer layer vibrations. Namely, the Raman band at about 1,550 cm−1 can be assigned to modified in‐plane optical phonon branches of graphene, while the Raman band at about 1,490 cm−1 can be assigned to modified folded parts of these branches inside the Brillouin zone of the buffer layer and can be considered as a Raman fingerprint of the buffer layer.

Rationalizing Electron–Phonon Interactions and Hot Carriers Cooling in 2D to 3D Metal Halide Perovskites

AbstractThe cooling mechanism of hot carriers (HC) in metal halide perovskites is a topic of debate which gathered huge attention due to its critical role in the performance of perovskite‐based optoelectronics. HC cooling in 2D perovskites is faster than in its 3D counterpart, whereas in 2D/3D perovskites cooling becomes faster with decreasing the thickness of the inorganic quantum wells. Using state‐of‐the art first principles calculations it is showed that the modulation of electron–phonon (e‐ph) coupling strength between bending and stretching phonon branches can explain this observation. Starting from the prototype BA2PbI4 and PEA2PbI4 2D perovskites, e‐ph coupling of individual phonon modes is investigated for 2D/3D perovskites with n = 1 and 3, along with a vis‐à‐vis comparison with the prototypical 3D MAPbI3 system. This study shows that e‐ph coupling with high‐frequency stretching phonon modes in the 60–120 cm−1 range is highest for n = 1 while it decreases with increasing the quantum well layers, by approaching the 3D bulk limit where e‐ph coupling with low‐frequency bending phonon modes (<60 cm−1) is dominant. Longer spacer cations with identical quantum well structures have a limited impact on the e‐ph coupling, highlighting that the primary factor governing HC cooling is the quantum confinement within the inorganic sublattice. This study provides an advancement in the understanding of the mode‐specific e‐ph mediated HC cooling mechanism in metal‐halide perovskites and can provide a route map toward tuning the e‐ph interaction, which is instrumental for effectively gathering HC in solar cell devices.

Break of thermal equilibrium between optical and acoustic phonon branches of CsPbI3 under continuous-wave light excitation and cryogenic temperature

The kinetic of low-temperature carrier and lattice of lead-halide perovskite is yet to be fully understood. In this work, we investigate the steady-state photoluminescences (PLs) of CsPbI3 at the environmental temperature (Te) ranging from 20 K to 300 K, and observed anomalous behaviors at cryogenic temperatures: The carrier temperature (Tc) of pure CsPbI3 exhibits a negative correlation with Te, accompanied by an expansion in Urbach tails of absorption spectra (Abs.) and excessive red-shifts at peak energy of PLs. These phenomena are also observed in those samples containing a certain amount of Cs4PbI6, but to a lesser extent and occurs at lower temperatures. It is attributed to the intensified hot phonon bottleneck effect (HPB) in CsPbI3 at cryogenic Te, which hinders the energy transfer from hot carriers, via longitudinal optics (LO) phonons to longitudinal acoustic (LA) phonons, to the ambient. For samples under continuous-wave laser excitation, in specific, the barrier induced by the enhanced HPB at low Te prevents the effective thermalization among carriers, LO and LA phonons, which, therefore, form thermally isolated ensembles with different temperatures. At cryogenic Te range, the elevated temperatures of carrier and LO phonon expand the high-energy side of PLs and the low-energy tail of Abs., respectively. For those samples in which the CsPbI3 is mixed with Cs4PbI6, the interfacial LO-LO interaction across them provides a bypass for heat dissipation, mitigating the heat accumulation in LO-phonons of CsPbI3. The results suggest that a strong HPB effect may break the thermal equilibrium among different branches of phonons in the lattice under certain extreme conditions.

Modulation of localized phonon thermal transport at GaN/AlxGa1-xN heterointerface: Polar surface, doping, and compressive Strain

The phonon transport processes within a few atomic layers near heterointerfaces play a crucial role in thermoelectric applications such as nitride-based high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs). However, a systematic investigation of their localized transport characteristics remains unexplored. This article employs the Interfacial Phonons method based on first-principles calculations to extract interface phonon information for GaN/AlxGa1-xN heterostructures. Molecular dynamics simulations are utilized to compare the phonon behaviors between Ga-face and N-face GaN-based heterointerfaces. The research extensively investigates the dependence of interfacial thermal transport on the concentration of Al atoms under ordered substitutional doping and the strength of uniaxial compressive strain. The research revealed that both Ga-face and N-face GaN/AlxGa1-xN heterointerfaces exhibit phonon branch drift. The differences in charge distribution at the polar surfaces lead to varying degrees of Brillouin zone distortion. The vibrational modes of the atoms at the N-face GaN interface are more compact and localized than those of Ga-face GaN, resulting in a stronger degree of localization for the optical phonon branches. When varying the doping concentration of Al atoms, some phonon branches at the GaN interface appear outside the band structure of the intrinsic bulk and surface states, exhibiting strong localized characteristics. The introduction of Al atoms at the heterointerface induces additional phonon scattering, and the lattice vibration mismatch between Al and Ga atoms results in a non-uniform residual stress field at the interface, further enhancing phonon-interface scattering. Moderate compressive strain-induced lattice distortion promotes the overlapping of phonon modes at the interface, allowing some localized phonons to serve as interface transport modes. This optimization enhances phonon transport at the heterointerface. This research provides valuable insights into a comprehensive understanding of interfacial thermal transport in GaN-based semiconductors. Moreover, it offers useful theoretical guidance for thermal management through the manipulation of phonon wave properties.