Phonon Bottleneck Research Articles

Ab initio nonadiabatic molecular dynamics investigation on the dynamics of photogenerated spin hole current in Cu-doped MoS2

Fully spin-polarized hole current is theoretically proposed to be generated by photoexcitation in the impurity states of the $\mathrm{Mo}{\mathrm{S}}_{2}$ monolayer with sulfur partially substituted by copper. To understand the dynamics of the photogenerated spin hole current, we perform a time-domain ab initio nonadiabatic molecular dynamics investigation with different initial excitation and temperature. First, the spin hole relaxes in a band-by-band manner. Therefore a longer lifetime can be achieved if the initial hole is generated at the lower edge of the impurity bands. Second, the phonon excitation is found to affect the spin hole dynamics significantly. When the temperature is decreased from 100 to 50 K, the hole relaxation across the band gap is strongly suppressed by the phonon bottleneck, which is due to the reduction of the phonon occupations. Our results show that the initial hole generation and phonon excitation are two key factors determining the dynamics of the photogenerated spin hole, which provide insights into the design of optimal spintronic devices.

Slow hot carrier cooling in cesium lead iodide perovskites

Lead halide perovskites are attracting a great deal of interest for optoelectronic applications such as solar cells, LEDs, and lasers because of their unique properties. In solar cells, heat dissipation by hot carriers results in a major energy loss channel responsible for the Shockley–Queisser efficiency limit. Hot carrier solar cells offer the possibility to overcome this limit and achieve energy conversion efficiency as high as 66% by extracting hot carriers. Therefore, fundamental studies on hot carrier relaxation dynamics in lead halide perovskites are important. Here, we elucidated the hot carrier cooling dynamics in all-inorganic cesium lead iodide (CsPbI3) perovskite using transient absorption spectroscopy. We observe that the hot carrier cooling rate in CsPbI3 decreases as the fluence of the pump light increases and the cooling is as slow as a few 10 ps when the photoexcited carrier density is 7 × 1018 cm−3, which is attributed to phonon bottleneck for high photoexcited carrier densities. Our findings suggest that CsPbI3 has a potential for hot carrier solar cell applications.

Phonon bottleneck identification in disordered nanoporous materials

Nanoporous materials are a promising platform for thermoelectrics in that they offer high thermal conductivity tunability while preserving good electrical properties, a crucial requirement for high- effciency thermal energy conversion. Understanding the impact of the pore arrangement on thermal transport is pivotal to engineering realistic materials, where pore disorder is unavoidable. Although there has been considerable progress in modeling thermal size effects in nanostructures, it has remained a challenge to screen such materials over a large phase space due to the slow simulation time required for accurate results. We use density functional theory in connection with the Boltzmann transport equation, to perform calculations of thermal conductivity in disordered porous materials. By leveraging graph theory and regressive analysis, we identify the set of pores representing the phonon bottleneck and obtain a descriptor for thermal transport, based on the sum of the pore-pore distances between such pores. This approach provides a simple tool to estimate phonon suppression in realistic porous materials for thermoelectric applications and enhance our understanding of heat transport in disordered materials.

Excited-state indirect excitons in GaAs quantum dot molecules

We demonstrate the fabrication of strain-free and widely adjustable GaAs quantum-dot molecules (QDMs) by filling of droplet etched nanoholes in AlGaAs. Gate-voltage dependent optical spectra of highly asymmetric QDMs exhibit anticrossings that clearly indicate strong coupling with delocalized molecule states. Furthermore, indirect excitons are observed that are related to recombinations of excited-state electrons and ground-state holes both located in different dots. Simple numerical simulations reproduce the electric-field dependent energy shifts of direct and indirect transitions and predict their radiative lifetimes. The visibility of excited-state indirect excitons even for strong off-resonant energy detuning indicates the presence of a phonon bottleneck which suppresses the relaxation of excited electrons into lower levels.

Towards an understanding of hot carrier cooling mechanisms in multiple quantum wells

Multiple quantum wells have been shown significantly reduced hot carrier cooling rates compared to bulk material and are thus a promising candidate for hot carrier solar cell absorbers. However, the mechanism(s) by which hot carrier cooling is restricted is not clear. A systematic study of carrier cooling rates in GaAs/AlAs multiple quantum wells (MQWs) with either varying barrier thickness or varying well thickness is presented in this paper. These allow an investigation as to whether the mechanisms of either a modification in hot carrier diffusion or a localisation of phonons emitted by hot carriers are primarily responsible for reduced carrier cooling rates. With the conclusion that for the structures investigated the situation is rather more complex with both carrier mobility to modify hot carrier diffusion, different diffusion rates for electrons and holes and reflection and localisation of phonons to enhance phonon bottleneck all playing their parts in modulating phonon reabsorption and hot carrier behaviour.

Room-Temperature Coherent Optical Phonon in 2D Electronic Spectra of CH3NH3PbI3 Perovskite as a Possible Cooling Bottleneck.

A hot phonon bottleneck may be responsible for slow hot carrier cooling in methylammonium lead iodide hybrid perovskite, creating the potential for more efficient hot carrier photovoltaics. In room-temperature 2D electronic spectra near the band edge, we observe amplitude oscillations due to a remarkably long lived 0.9 THz coherent phonon population at room temperature. This phonon (or set of phonons) is assigned to angular distortions of the Pb-I lattice, not coupled to cation rotations. The strong coupling between the electronic transition and the 0.9 THz mode(s), together with relative isolation from other phonon modes, makes it likely to cause a phonon bottleneck. The pump frequency resolution of the 2D spectra also enables independent observation of photoinduced absorptions and bleaches independently and confirms that features due to band gap renormalization are longer-lived than in transient absorption spectra.

Long-Lived Hot Carriers in Formamidinium Lead Iodide Nanocrystals

The efficient harvesting of hot carrier energy in semiconductors is typically inhibited by their ultrafast thermalization process. Recently, highly promising experiments reported on the slowdown of the intraband relaxation in hybrid metal halide perovskites. In this work, we report on the presence of long-lived hot carriers in weakly confined colloidal nanocrystals (NCs) of formamidinium lead iodide perovskite (FAPbI3). The effect is apparent from the excitation-dependent lengthening of the rise time and broadening of the high-energy tail of the transient absorption bleaching signal, yielding a retardation of the carrier relaxation by 2 orders of magnitude compared to typical time scales in colloidal semiconductor NCs. Three distinct cooling stages are observed, occurring at sub-picosecond, ∼5 ps, and ∼40 ps time scales, which we attribute to scattering from LO-phonons, contribution from a hot phonon bottleneck effect and Auger heating, respectively. Thermalization appears also influenced by the FAPbI3 NC...

Thermal anisotropy enhanced by phonon size effects in nanoporous materials

While thermal anisotropy is a desirable materials property for many applications, including transverse thermoelectrics and thermal management in electronic devices, it remains elusive in practical natural compounds. In this work, we show how nanoporous materials with anisotropic pore lattices can be used as a platform for inducing strong heat transport directionality in isotropic materials. Using density functional theory and the phonon Boltzmann transport equation, we calculate the phonon-size effects and thermal conductivity of nanoporous silicon with different anisotropic pore lattices. Our calculations predict a strong directionality in the thermal conductivity, dictated by the difference in the pore-pore distances, i.e., the phonon bottleneck, along the two Cartesian axes. Using Fourier's law, we also compute the diffusive heat transport for the same geometries obtaining significantly smaller anisotropy, revealing the crucial role of phonon-size effects in tuning thermal transport directionality. Besides enhancing our understanding of nanoscale heat transport, our results demonstrate the promise of nanoporous materials for modulating anisotropy in thermal conductivity.

Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals

Hot-carrier solar cells can overcome the Shockley-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ∼83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells.

Inelastic X-ray scattering measurements of III–V multiple quantum wells

Inelastic X-ray scattering (IXS) on an In0.17Ga0.83As/GaAs0.8P0.2 multiple quantum well (MQW) superlattice has been conducted to investigate the potential for phonon bottlenecks in low dimensional materials. This work shows that the measured spectra are in good agreement with an adiabatic bond charge model prediction and back-folded phonon modes make large contributions to the broadening of peaks observed in the spectra. The high-lying mode at 45 meV in the MQW is attributed to vibrations of Ga and P and confirmed by both experiment and theory. The acoustic phonons have a dominant contribution from the Ga and As components, and the contribution from InAs is small and only visible at around 29.7 meV. Low energy optical modes resulting from back-folding might be a key to increased electron-phonon coupling in the material system. The suitability of utilizing IXS as a means to investigate phonon modes in low dimensional materials is also discussed.

Acoustic-optical phonon up-conversion and hot-phonon bottleneck in lead-halide perovskites

The hot-phonon bottleneck effect in lead-halide perovskites (APbX3) prolongs the cooling period of hot charge carriers, an effect that could be used in the next-generation photovoltaics devices. Using ultrafast optical characterization and first-principle calculations, four kinds of lead-halide perovskites (A=FA+/MA+/Cs+, X=I−/Br−) are compared in this study to reveal the carrier-phonon dynamics within. Here we show a stronger phonon bottleneck effect in hybrid perovskites than in their inorganic counterparts. Compared with the caesium-based system, a 10 times slower carrier-phonon relaxation rate is observed in FAPbI3. The up-conversion of low-energy phonons is proposed to be responsible for the bottleneck effect. The presence of organic cations introduces overlapping phonon branches and facilitates the up-transition of low-energy modes. The blocking of phonon propagation associated with an ultralow thermal conductivity of the material also increases the overall up-conversion efficiency. This result also suggests a new and general method for achieving long-lived hot carriers in materials.

Phonon bottleneck and long-lived excited states in π-conjugated pyrene hoop.

In the last decade, recent synthetic advances have launched carbon-based π-conjugated hoops to the forefront of theoretical and experimental investigation not only for their potential use as bottom-up templates for carbon nanotube (CNT) growth, but also for the interesting excitonic effects arising from the cyclic geometry, unique π-system orientation, and unusual electronic interactions and couplings. In particular, cyclic materials based on pyrene, a common component in organic electronics, are popular candidates for the future design of π-conjugated nanorings for optoelectronic applications. Understanding the photophysical response in cyclic oligopyrenes can be achieved using non-adiabatic excited state molecular dynamics (NA-ESMD). Through NA-ESMD modeling, we reveal details of the nonradiative relaxation processes in the circular pyrene tetramer [4]cyclo-2,7-pyrenylene ([4]CPY) where we find that the strong non-adiabatic coupling combined with the dense manifold of excited states creates an internal conversion mechanism dominated by ultrafast sequential quantum transitions. However, we observe two long-lived electronic excited states that introduce a phonon bottleneck in the electronic relaxation process. In fact, the timescale for the electronic relaxation is almost exclusively dominated by the lifetimes of the long-lived states. We find that the states associated with the phonon bottleneck are separated from lower energy states by large energy gaps and are characterized by localization on a single pyrene unit resulting in a spatial mismatch with strongly delocalized neighboring states.

Ultrafast carrier dynamics in bimetallic nanostructure-enhanced methylammonium lead bromide perovskites.

In this work, we examine the impact of hybrid bimetallic Au/Ag core/shell nanostructures on the carrier dynamics of methylammonium lead tribromide (MAPbBr3) mesoporous perovskite solar cells (PSCs). Plasmon-enhanced PSCs incorporated with Au/Ag nanostructures demonstrated improved light harvesting and increased power conversion efficiency by 26% relative to reference devices. Two complementary spectral techniques, transient absorption spectroscopy (TAS) and time-resolved photoluminescence (trPL), were employed to gain a mechanistic understanding of plasmonic enhancement processes. TAS revealed a decrease in the photobleach formation time, which suggests that the nanostructures improve hot carrier thermalization to an equilibrium distribution, relieving hot phonon bottleneck in MAPbBr3 perovskites. TAS also showed a decrease in carrier decay lifetimes, indicating that nanostructures enhance photoinduced carrier generation and promote efficient electron injection into TiO2 prior to bulk recombination. Furthermore, nanostructure-incorporated perovskite films demonstrated quenching in steady-state PL and decreases in trPL carrier lifetimes, providing further evidence of improved carrier injection in plasmon-enhanced mesoporous PSCs.

Dynamics of Strong Coupling between CdSe Quantum Dots and Surface Plasmon Polaritons in Subwavelength Hole Array.

We have investigated the strong coupling interaction between excitons of CdSe quantum dots (QDs) and surface plasmon polaritons (SPPs) of gold nanohole array by steady-state spectroscopic method and transient absorption measurements. Numerical and experimental steady-state measurements demonstrate that the SPP-QD system can indeed undergo strong coupling, characterized by a Rabi splitting up to 220 meV. In particular, it is found that in the transient absorption spectra, under resonant excitation, the 1S transition bleaching band from uncoupled CdSe QDs is completely separated into two distinctive bleaching bands, remarkably fingerprinting the hybrid SPP-QD state. It was also found that the lifetime of these hybrid bands is just slightly shorter than the lifetime of bare CdSe QDs, possibly caused by the phonon bottleneck effect due to the large Rabi splitting. These results could open a new avenue toward the development of novel nanoplasmon devices with strong SPP-QD interaction.

Ultrafast lattice dynamics in lead selenide quantum dot induced by laser excitation

We directly monitored the lattice dynamics in PbSe quantum dots (QD) induced by laser excitation using ultrafast electron diffraction. The energy relaxation between the carriers and the lattice took place within 10 ps, showing no evidence of any significant phonon bottleneck effect. Meanwhile, the lattice dilation exhibited some unusual features that could not be explained by the available mechanisms of photon-induced acoustic vibrations in semiconductors alone. The heat transport between the QDs and the substrate deviates significantly from Fourier's Law, which opens questions about the heat transfer under nonequilibrium conditions in nanoscale materials.

Surface Chemistry of Semiconducting Quantum Dots: Theoretical Perspectives.

Colloidal quantum dots (QDs) are near-ideal nanomaterials for energy conversion and lighting technologies. However, their photophysics exhibits supreme sensitivity to surface passivation and defects, of which control is problematic. The role of passivating ligands in photodynamics remains questionable and is a focus of ongoing research. The optically forbidden nature of surface-associated states makes direct measurements on them challenging. Therefore, computational modeling is imperative for insights into surface passivation and its impact on light-driven processes in QDs. This Account discusses challenges and recent progress in understanding surface effects on the photophysics of QDs addressed via quantum-chemical calculations. We overview different methods, including the effective mass approximation (EMA), time-dependent density functional theory (TDDFT), and multiconfiguration approaches, considering their strengths and weaknesses relevant to modeling of QDs with a complicated surface. We focus on CdSe, PbSe, and Si QDs, where calculations successfully explain experimental trends sensitive to surface defects, doping, and ligands. We show that the EMA accurately describes both linear and nonlinear optical properties of large-sized CdSe QDs (>2.5 nm), while TDDFT is required for smaller QDs where surface effects dominate. Both approaches confirm efficient two-photon absorption enabling applications of QDs as nonlinear optical materials. TDDFT also describes the effects of morphology on the optical response of QDs: the photophysics of stoichiometric, magic-sized XnYn (X = Cd, Pb; Y = S, Se) QDs is less sensitive to their passivation compared with nonstoichiometric Xn≠mYm QDs. In the latter, surface-driven optically inactive midgap states can be eliminated by anionic ligands, explaining the better emission of metal-enriched QDs compared with nonmetal-enriched QDs. Ideal passivation of magic-sized QDs by amines and phosphine oxides leaves lower-energy transitions intact, while thiol derivatives add ligand-localized trap states to the band gap. Depending on its position, any loss of ligand from the QD's surface also introduces electron or hole traps, decreasing the QD's luminescence. TDDFT investigations of QD-ligand and QD-QD interactions provide an explanation of experimentally detected enhancement of blinking on-times in closely packed Si QDs and establish favorable conditions for hole transfer from the photoexcited CdSe QD to metal-organic dyes. While TDDFT well describes qualitative trends in optical response to stoichiometry and ligand modifications of QDs, it is unable to calculate highly correlated electronic states like biexcitons and magnetic-dopant-derived states. In these cases, multiconfiguration methods are applied to small nanoclusters and the results are extrapolated to larger-sized QDs, providing reasonable explanations of experimental observables. For light-driven dynamics, the electron-phonon couplings are important, and nonadiabatic dynamics (NAD) is applied. NAD based on first-principles calculations is a current grand challenge for the theory. However, it can be accomplished through sets of semiclassical approximations such as surface hopping (SH). We discuss validations of approximations used in photodynamics of ligated and doped QDs. Time-domain DFT-based SH-NAD reveals the ligand's role in ultrafast energy relaxation and the connection between the phonon bottleneck and the Zeno effect in CdSe QDs. The calculated results are helpful in controlling both dissipation and radiative processes in QDs via surface engineering and in explanations of experimental data.

Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

Field‐Induced Single‐Ion Magnetism Based on Spin‐Phonon Relaxation in a Distorted Octahedral High‐Spin Cobalt(II) Complex

AbstractInvited for the cover of this issue is the group of Ryuta Ishikawa at Fukuoka University, Japan, collaborating with the group of Masahiro Yamashita at Tohoku University, Japan. The cover image shows a schematic representation of possible slow magnetic relaxation pathways (a two‐phonon Raman process and a direct phonon bottleneck process) in a distorted octahedral high‐spin CoII SIM with positive zero‐field splitting.

Magnetic relaxation in Zn(PO3)2·Er(PO3)3 glass

The results of experimental studies of alternating (ac) magnetic susceptibility and specific heat of Zn(PO3)2·Er(PO3)3 glass are reported. Despite a high concentration of magnetic Er(III) ions the analysis of ac susceptibility ruled out the formation of a spin glass state in the used range of temperatures. Two relaxation processes were identified. The first one is thermally activated with a crossover in its temperature dependence observed at nominally 7K. The relaxation at lower temperatures seems to be governed by a direct process with pronounced effect of phonon bottleneck. Striking deceleration of spin dynamics with increasing temperature found above 7K is tentatively attributed to overcoming Ioffe – Regel crossover and strong scattering of acoustic phonons on local modes. Simplified prediction derived from a soft-mode-dynamics model confirms the presence of the boson peak observed in specific heat data and reasonably predicts the temperature of the crossover. The second process is consistent with a cross – tunneling relaxation. The obtained results suggest that magnetic doping of glasses and studying magnetic relaxation may represent an alternative tool for the investigation of lattice modes in glasses.

P-State Luminescence in CdSe Nanoplatelets: Role of Lateral Confinement and a Longitudinal Optical Phonon Bottleneck.

We evidence excited state emission from p states well below ground state saturation in CdSe nanoplatelets. Size-dependent exciton ground and excited state energies and population dynamics are determined by four independent methods: time-resolved PL, time-integrated PL, rate equation modeling, and Hartree renormalized k·p calculations-all in very good agreement. The ground state-excited state energy spacing strongly increases with the lateral platelet quantization. Depending on its detuning to the LO phonon energy, the PL decay of CdSe platelets is governed by a size tunable LO phonon bottleneck, related to the low exciton-phonon coupling, very large oscillator strength, and energy spacing of both states. This is, for instance, ideal to tune lasing properties. CdSe platelets are perfectly suited to control the exciton-phonon interaction by changing their lateral size while the optical transition energy is determined by their thickness.