<abstract> <p>Ferroelectricity is demonstrated for the first time in Si(100)/SiO<sub>2</sub>/TiN/HfO<sub>2</sub>-ZrO<sub>2</sub>/TiN stack using pulsed laser deposition (PLD) and the effects of temperatures, partial oxygen pressures, and thickness for the stabilization of the ferroelectric phase were mapped. Thin films deposited at a higher temperature and a higher oxygen partial pressure have a higher thickness, demonstrating a better ferroelectric response with ~12 μC/cm<sup>2</sup> remnant polarization, a leakage current of 10<sup>−7</sup> A (at 8 V) and endurance &gt; 10<sup>11</sup> cycles indicative of an orthorhombic crystal phase. In contrast, thin films deposited at lower temperatures and pressures does not exhibit ferroelectric behavior. These films can be attributed to having a dominant monoclinic phase, having lower grain size and increased leakage current. Finally, the effects of ZrO<sub>2</sub> as top and bottom layer were also investigated which showed that ZrO<sub>2</sub> as the top layer provided better mechanical confinement for stabilizing the orthorhombic phase instead of as the bottom layer.</p> </abstract>
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