A low-threshold continuous-wave (CW)-operable gain-coupled distributed-feedback laser with a corrugated active layer was realized with InGaAsP/InP materials by implementing active ion etching and organometallic vapor-phase epitaxy. Without any phase-shifting structures, the devices exhibited excellent single-longitudinal-mode oscillation, independent of facet reflection. Threshold currents as low as 12 mA and side-mode suppression ratios as high as 55 dB were demonstrated at a wavelength of 1.55 mu m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>