Phase-change Devices Research Articles

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport. Yet, it is difficult to predict if dopants will form a secondary phase or a solid solution, which hinders the tailoring of microstructures and material properties. Here, we propose that the solid solution is more easily formed between metavalently bonded solids, while precipitates prefer to exist in systems mixed by metavalently bonded and other bonding mechanisms. We demonstrate this in a metavalently bonded GeTe compound alloyed with different sulfides. We find that S can dissolve in the GeTe matrix when alloyed with metavalently bonded PbS. In contrast, S-rich second phases are omnipresent via alloying with covalently bonded GeS and SnS. Benefiting from the reduced phonon propagation and the optimized electrical transport properties upon doping PbS in GeTe, a high figure-of-merit ZT of 2.2 at 773 K in (Ge0.84Sb0.06Te0.9)(PbSe)0.05(PbS)0.05 is realized. This strategy can be applied to other metavalently bonded materials to design properties beyond thermoelectrics.

Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties.

Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron-phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.

Experimental study of an aluminum based three-dimensional thermosyphon heat sink with microscale enhancement structure

One of the most significant limitations to the advancement of electronics is the issue of heat dissipation. Currently, air cooling remains the most widely used method for heat dissipation due to the advantages of low cost and ease of maintenance. However, the traditional air-cooling method based on an all-solid heat sink is unable to keep pace with the rapid advancement in thermal power of electronics due to its limitation in area expansion by only solid fins. This study proposes an aluminum-based three-dimensional thermosyphon (3D-TS) coupling boiling-condensation heat transfer and forced air cooling as a means of overcoming the limitations of conventional air-cooling methods. Additionally, the incorporation of micro pin-fins enhances the boiling heat transfer and the overall performance of the three-dimensional thermosyphon. The performance of the three-dimensional thermosyphon is experimentally studied and analyzed under different volumetric flow rates using the environmentally friendly refrigerant R1233zd(E) as the working fluid. The results indicate that the total thermal resistance exhibits a biphasic response to heating power, with a decrease initially followed by an increase. This response is primarily attributed to the boiling mode on the substrate. Moreover, the micro pin-fins significantly enhance the boiling heat transfer on the substrate of the three-dimensional thermosyphon, enabling the three-dimensional thermosyphon to reach a minimum thermal resistance of 0.075 K/W and a maximum thermal dissipating power of 650 W with the temperature of the heating source below 85 °C. The three-dimensional thermosyphon proposed in this work is capable of meeting the cooling requirements of the majority of high-performance chips. This paper offers a valuable reference and guidance for the design and optimization of the phase-change devices.

Highly flexible and temperature-tolerant phase change devices for dual-band camouflage

Here, we have developed a more temperature-tolerant emitter with a gradient emittance, which can enable adaptation to changing environmental conditions. Such a thermal emitter is mainly constructed by multilayered films composed of nitrogen (N)-doped Ge2Sb2Te5 (N-GST) and an underlying metal film. The proposed device not only possesses special wavelength selectivity in the middle infrared range but can also dynamically adjust average emissivity (from 0.13 to 0.83) through the degree of crystallization. Besides, N doping can elevate the phase transition temperature of GST and enhance its thermal resistance, which renders it particularly well-suited for applications in higher temperature environments than pure GST. This emitter also shows strong adhesion capability and high flexibility against bending, enabling more practical and widespread situations. By using a multi-layer structure, we combined the more temperature-tolerant and dynamically modulating N-GST emitter with an optical thin film, successfully achieving dual camouflage for both infrared and visible light. The element doping technology and multi-layer stacking approach presented in this research will provide valuable insight for the development of dynamic emissive materials in multi-spectral camouflage scenarios.

650 ps SET speed in Ge2Sb2Te5 phase change memory induced by TiO2 dielectric crystal plane

AbstractCrystallization speed of phase change material is one of the main obstacles for the application of phase change memory (PCM) as storage class memory in computing systems, which requires the combination of nonvolatility with ultra‐fast operation speed in nanoseconds. Here, we propose a novel approach to speed up crystallization process of the only commercial phase change chalcogenide Ge2Sb2Te5 (GST). By employing TiO2 as the dielectric layer in phase change device, operation speed of 650 ps has been achieved, which is the fastest among existing representative PCM, and is comparable to the programing speed of commercial dynamic random access memory (DRAM). Because of its octahedral atomic configuration, TiO2 can provide nucleation interfaces for GST, thus facilitating the crystal growth at the determinate interface area. Ti–O–Ti–O four‐fold rings on the (110) plane of tetragonal TiO2 is critical for the fast‐atomic rearrangement in the amorphous matrix of GST that enables ultra‐fast operation speed. The significant improvement of operation speed in PCM through incorporating standard dielectric material TiO2 in DRAM paves the way for the application of phase change memory in high performance cache‐type data storage.image

Dual-phase coexistence enables to alleviate resistance drift in phase-change films

The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge2Sb2Te5 (GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles.

Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices. We show that our synthesis approach can accurately control the structure of the CGT colloids, such as composition-tuned CGT amorphous nanoparticles as well as crystalline CGT nanoparticles with trigonal α-GeTe and tetragonal Cu2GeTe3 phases. In situ characterization techniques such as high-temperature X-ray diffraction and X-ray absorption spectroscopy reveal that Cu doping in GeTe improves the thermal properties and amorphous phase stability of the nanoparticles, in addition to nanoscale effects, which enhance the nonvolatility characteristics of CGT nanoparticles even further. Moreover, we demonstrate the thin-film fabrication of CGT nanoparticles and characterize their optical properties with spectroscopic ellipsometry measurements. We reveal that CGT nanoparticle thin films exhibit a negative reflectivity change and have good reflectivity contrast in the near-IR spectrum. Our work promotes the possibility to use PCM in nanoparticle form for applications such as electro-optical switching devices, metalenses, reflectivity displays, and phase-change IR devices.

Performance of a novel loop heat pipe coupled with micro vapor-driven jet injector – An experimental and numerical study

Loop heat pipe (LHP) is an efficient phase-change heat transfer device which has been widely applied in cooling high-power electronics on ground and in spacecraft. In previous work, a novel LHP coupled with vapor-driven jet injector (VDJI) has been proved to be feasible and shows excellent performance, namely LHPI. However, due to the lack of pressure data during LHP operation, the coupling mechanisms of VDJI and LHP remain unknown. Especially, the heat-mass transfer between high-speed vapor and subcooled liquid inside VDJI, which has great influence on the LHPI, need to be investigated to guide the design of the LHPI. In this paper, the start-up process, steady-state operation characteristic of LHPI and internal flow field of VDJI were investigated experimentally and numerically. By using the pore-forming sintering and integrated sintering method, the bi-porous wick was prepared and embedded on the base plate surface of evaporator, which brought a significant improvement in its performance. The results indicated that the LHPI could operate under a power of 600 W (50.0 W/cm2) without dry-out. Maintaining the heating wall temperature within 85 °C, the minimum thermal resistance of the LHPI with bi-porous and integrated sintered wick was below 0.18, and the maximum heating power can reach up to 404 W, which are 60% lower and 52.5% higher than mono-porous wick, respectively. In addition, four operation modes of VDJI were classified as low-efficiency mode, normal-injection mode, restricted expansion mode and superheated mode. The operation modes of VDJI had great influence on the performance of LHPI. In normal-injection mode, the entrainment ratio of VDJI exceeded 100, which resulted in the lowest thermal resistance of LHPI. For long-term operation of LHPI, the VDJI is suggested keep operating in normal-injection mode. Moreover, by using 3D numerical simulation method, the internal flow structure of the VDJI was obtained to gives an insight into mechanisms of these four operation modes. The numerical results showed the profile of compression waves and confirmed the existence of condensation shock wave in VDJI.

Multi-objective optimization of a novel phase-change thermal storage unit based on theoretical modeling and genetic algorithm

Phase-change thermal storage technologies are becoming increasingly indispensable in the field of renewable energy, and researchers have been striving to achieve high thermal storage performance in storage devices. To enhance the application potential of phase-change thermal storage units based on micro heat pipe arrays, theoretical analysis is applied to optimize the operating parameters and the fin structure, addressing the research gap caused by insufficient theoretical analysis. Therefore, an accurate thermal resistance network model is developed, and machine learning algorithms are employed for the multi-objective optimization of the fin structure. The optimal heights, widths, and thicknesses in two directions of the fins are 42.2, 3.7, 0.3, and 0.8 mm, respectively, resulting in a 15.8 % increase in charging power compared to the initial structure without increasing metal consumption. Additionally, it is recommended that the design flow rate be increased by 26 kg/h for each additional thermal storage unit connected in series. Finally, a phase-change thermal storage device is designed for a solar water heating system, and its applicability is simulated and analyzed. This study provides design guidance for this novel thermal storage device and promotes its application in the field of renewable energy.

Improved optical contrast of plasmonic phase change memory using a Fabry-Perot cavity

As a promising technology to realize multilevel, non-volatile data storage and information processing, optical phase change technologies have attracted extensive attention in recent years. However, existing phase-change photonic devices face significant challenges such as limited switching contrast and high switching energy. This study introduces an innovative approach to tackle these issues by leveraging Fabry-Perot (F-P) cavity resonance and plasmon resonance techniques to enhance the modulation effect of phase change materials (PCMs) on the light. To the best of our knowledge, a novel device structure is proposed, featuring an elliptic nano-antenna placed on an F-P cavity waveguide composed of symmetric Bragg grating. This design exploits the enhanced electric field to achieve low power consumption and high contrast. The device enables crucial functions, including read, write, and erase operations, under all light conditions. Through the synergistic utilization of plasma and F-P cavity effects, an ultra-high switching contrast of around 70.6% is achieved. By varying the pulse power or duration, the proportion between the crystalline and amorphous states of the PCMs is altered, consequently modifying its refractive index. With its wide range of applications in optical storage and computing, the device holds significant potential for advancing these fields.

Study on the modulation of sb phase change thin films and device properties by MoTe2 heterojunction layer

Study on the modulation of sb phase change thin films and device properties by MoTe2 heterojunction layer

Leaky-integrate-fire neuron based on vertically extended drain Si[formula omitted]Ge[formula omitted] source TFET: Ultra-energy-efficient and high speed design

This article investigates the performance of a vertically extended drain double gate Si1−x Gex source tunnel field effect transistor (VD-DG-Si1−x Gex S-TFET) as a leaky integrate-and-fire (LIF) neuron. The proposed VD-DG-Si1−x Gex S-TFET structure has been designed and optimized by deploying the commercially available Silvaco TCAD. The LIF neuron using VD-DG-Si1−x Gex S-TFET requires a low spiking threshold voltage (i.e. 0.20 V) which is 5x, 3x, 5x, 1.3x, 1.55x, 7.5x, and 1.44x times less in comparison to MOSFET, Bulk FinFET, phase change device, SOI MOSFET, DG-JLFET, silicon nanowire, and DL-TFET silicon neuron. The proposed device based neuron demonstrates the least spiking energy (177 ZJ) reported to date which is 18192 times less as compared to BTBT based PDSOI MOSFET neuron. The threshold value of current is achieved at 0.20 V drain voltage which is 15x, 14x, 10x, and 1.5x less as compared to FinFET, PD-SOI MOSFET, LBIMOS, and DL-TFET, respectively. Moreover, the effects of gate metal work function, germanium mole fraction, and temperature on the spike current variations have also been investigated. Here, impact ionization is a key method for generating a neuron spike due to holes accumulated in the potential well of VD-DG-Si1−xGex S-TFET. In addition, a LIF neuron based on VD-DG-Si0.5Ge0.5 S-TFET device exhibits a 9 THz spiking frequency which is approximately 12 times higher than real nerves present in the human body. This work shows a remarkable reduction in the power consumption and the proposed device neuron is a potential start-up solution for a large scale spiking neural networks (SNN) implementation because of its better performance and compact circuitry.

Phase-Change RF Devices for Future Communications: Phase-Change Materials and Devices for Reconfigurable RF Front-Ends: State-of-the-Art and Future Perspectives

Phase-Change RF Devices for Future Communications: Phase-Change Materials and Devices for Reconfigurable RF Front-Ends: State-of-the-Art and Future Perspectives

Temperature control method and verification for spaceborne atomic clock based on phase change technology

The spaceborne atomic clock, as the time reference for navigation signal generation and system ranging, is the core component of the satellite system payload, and temperature stability is one of the main factors affecting the output frequency stability of the atomic clock. To ensure its continuous and stable operation in orbit, the temperature control system needs to provide a good working temperature environment for it. This article takes the high stability temperature control of the rubidium atomic clock in low-Earth inclined orbit as the research background, and conducts research on temperature control methods and phase change devices based on phase change technology. Simulation analysis and in-orbit telemetry data show that, by utilizing the temperature stability characteristic during the phase change process, the phase change temperature control system effectively suppresses the temperature fluctuations of the rubidium atomic clock caused by drastic changes in the space thermal environment.

Encapsulation of crystalline and amorphous Sb2S3 within carbon and boron nitride nanotubes.

The recent rediscovery of 1D and quasi-1D (q-1D) van der Waals (vdW) crystals has laid foundation for the realization of emergent electronic, optical, and quantum-confined physical phenomena in both bulk and at the nanoscale. Of these, the highly anisotropic q-1D vdW crystal structure and the visible-light optical/optoelectronic properties of antimony trisulfide (Sb2S3) have led to its widespread consideration as a promising building block for photovoltaic and non-volatile phase change devices. However, while these applications will greatly benefit from well-defined and sub-nanometer-thick q-1D structures, little has been known about feasible synthetic routes that can access single covalent chains of Sb2S3. In this work, we explore how encapsulation in single or multi-walled carbon nanotubes (SWCNTs or MWCNTs) and visible-range transparent boron nitride nanotubes (BNNTs) influences the growth and phase of Sb2S3 nanostructures. We demonstrate that nanotubes with smaller diameters had a more pronounced effect in the crystallographic growth direction and orientation of Sb2S3 nanostructures, promoting the crystallization of the guest structures along the long-axis [010]-direction. As such, we were able to reliably access well-ordered few to single covalent chains of Sb2S3 when synthesized within defect-free SWCNTs with sub-2 nm inner diameters. Intriguingly, we found that the degree of crystalline order of Sb2S3 nanostructures was strongly influenced by the presence of defects and discontinuities along the Sb2S3-nanotube interface. We show that amorphous nanowire domains of Sb2S3 form around defect sites in larger, multi-walled nanotubes that manifest inner wall defects and discontinuities, suggesting a means to manipulate the crystallization dynamics of confined sub-10 nm-thick Sb2S3 nanostructures within nanotubes. Lastly, we show that ultranarrow amorphous Sb2S3 can impart functionality onto isolable BNNTs with photocurrent generation in the pA range which, alongside the dispersibility of the Sb2S3@BNNTs, could be leveraged to easily fabricate photoresistors only a few nm in width. Altogether, our results serve to solidify the understanding of how q-1D vdW pnictogen chalcogenides crystallize within confined synthetic platforms and are a step towards realizing functional materials from ensembles of encapsulated heterostructures.

Phase transition in WSe2-xTex monolayers driven by charge injection and pressure: a first-principles study.

Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.

Tailoring Substrate Topography to Enhance Wicking Performance of Electrodeposited Cu Porous Films

Porous metallic films have received emerging interests in the fields of catalysts, fuel cells, lithium batteries, and phase-change heat transfer devices. Substrate topography is known to have a strong impact on adhesion and morphology of porous coating layers prepared by electrodeposition. In this study, we have tailored the topography of a Cu substrate by wet etching in a sodium persulfate/sulfuric acid (SPS) solution prior to electrodeposition of porous Cu films. An analytic approach is proposed to quantitatively analyze nucleation and growth of dendritic Cu deposits on the SPS-treated Cu substrates. Such a dendritic porous Cu film can serve as a capillary wick to complete recirculation of condensed liquid in the phase-change heat transfer devices. The maximum heat transfer rate of a heat pipe or vapor chamber indeed is proportional to the capillary performance (K/Reff ) of the wick structure, where K and Reff stand for liquid permeability and effective pore radius of the wick, respectively. A large K/Reff value of 0.975 µm has been attained for the electrodeposited dendritic Cu film on a Cu substrate with an optimal SPS etching treatment. The influence of dendritic deposits on the wicking performance of the electrodeposited Cu film is investigated. Figure 1

Thermally processed phase change behavior on the stoichiometric efficacy of quaternary Se77.5-X Te20 Sn2.5 AgX (X = 2.5, 5, 7.5) thin films

Thin films of the quaternary metal chalcogenide have recently gained attention due to their improved electrical, optical, thermal, and structural properties. The structural, thermal, morphological, optical, and electrical properties of Ag-modified novel quaternary Se–Te–Sn–Ag thin film systems are investigated in this paper. Temperature-dependent structural, electrical, and thermoelectric properties are given special attention. From Differential Thermal Analysis/Thermogravimetric Analysis (DTA/TGA), the Ag content in this composition induces thermal stability and crystalline phase as well as glass phase transitions. High-temperature X-ray diffraction (HTXRD) patterns were used to investigate the temperature-dependent structural phase transition, grain size, lattice strain, and dislocation density. The morphological observations show that Ag concentration promotes the nucleation and growth processes of nanorod structures in as-deposited thin films. Optical characteristics reveal higher IR transparency in thin films and high refractive indexes in the range of 3.22–3.29. The as-deposited thin films resistivity decreases with increasing temperature and silver content. The Hall measurement corroborates the results obtained from the Seebeck measurements, indicating that the samples are n-type. The phase change switching mechanism of phase change devices is still unclear; there are two possible mechanisms: thermal and electronic models. This work proposes thermally processed phase transition behaviors in structural and electrical studies. The result of the above analyses shows that the quaternary Se–Te–Sn–Ag thin film will be a potential candidate for phase change device applications.

Emulation of neuro-mimetic dynamics via GaSb/Si heterojunction V-DGTFET leaky-integrate-fire silicon neuron

A leaky integrate and fire (LIF) neuron property is emulated using vertically developed double gate GaSb/Si tunnel field effect transistor (V-DGTFET). The suggested device can precisely replicate the neuronal dynamics after considering and proper validating the numerical simulations. Silvaco-TCAD tool is exploited for emulation of neuronal attributes and found in good agreement with earlier published research data. The article reports the membrane threshold voltage of 0.47 V which is 3.2x, 2.13x, 2.13x, 1.28x times less as compared to silicon nanowire, MOSFET, phase change device and Bulk FinFET neuron. The energy required for mimicking the neurons is computed as 0.748 aJ which is 1.2 × 109, 4 × 107, 4.68 × 107, 1.34 × 107, 7.59 × 106, 8.42 × 103, 4.30 × 103 3.34 × 105, 2.41 × 105, 1.52 × 106, 26.7,2, 3.88 × 103 times less compared to CMOS, phase change device, SOI CMOS, PCMO RRAM, SiNPN, Bulk FinFET, BTBT based PDSOI MOS, FBFET, LBIMOS, DGJLFET, Si NIPIN, DL-TFET, silicon nano wire respectively. The biasing at second gate is used to induce potential well at channel region to accumulate hole carriers produced due to impact ionization. The threshold current is achieved at 0.20 V drain voltage which is 15x, 14x, 10x, and 1.5x less as compared to FinFET, PD-SOI MOSFET, LBIMOS, and DLTFET respectively. Furthermore, calculated spiking frequency of V-DGTFET LIF neuron is 534 GHz. Thus, remarkable enhancement in frequency of operation and an ultra-low energy per spike makes this neuron device a potential solution for implementing the neuro-mimetic behaviour at large scale.

Calorimetric studies of yttrium doped non-conventional phase-change materials for improved performance

Though phase-change materials (PCMs) are regarded as constituent part of next-generation phase-change memory and other unfolding optoelectronic applications, the kinetics study of glass transition and crystallization, significant property in switching remains obscure in high-temperature region. Hence, this paper reports the investigation of glass transition and crystallization kinetics of Te(1-x) (GeSe0.5)Yx (TGSY) chalcogenide glass using differential scanning calorimetry (DSC) at heating rates 5, 10, 15, 20 °C/min. The effect of increasing Y quantity has been described by connecting structural relaxation kinematics during glass transition phenomena and devitrification while crystallization in chalcogenide glasses with their varied physicochemical characteristics. The inclusion of Y causes a discernible rise in the crystallization rate. The system is compatible with a strong glass-forming liquid, according to the Te(1-x) (GeSe0.5) Yx material fragility index. According to the average values of the kinetic exponent factors, there is heterogeneous nucleation for the investigated composition, which is subsequently followed by a two- or three-dimensional crystal growth phenomenon. Different glass stability criteria have been discussed based on the relationship between the characteristic temperatures. The CZW and CLX criteria were found to be inappropriate for discussing glass stability (GS) for the studied compositions based on the heating rate and composition dependencies of all criteria. The CYL criteria of Yuan et al. is the finest and it demonstrates the optimal ability for evaluating the GS, according to the data that was extracted from several GS criteria and their relative change parameters. By adding Y, thermal stability parameter and enthalpy emitted during the transition of glass and crystalline phases have been found to have an inverse relationship. All studied properties can conclude the application of studied material in phase-change material devices.