Transition metal perovskite oxide SrMoO3 with a Mo4+ 4d2 electronic configuration exhibits a room-temperature resistivity of 5.1 μΩcm in a single-crystal form and, therefore, is considered a prominent conducting electrode material for all-oxide microelectronic devices. Stabilization of the unfavorable Mo4+ valence state in SrMoO3 thin films necessitates reductive growth conditions that are often incompatible with a highly oxidative environment necessary to grow epitaxial heterostructures with fully oxygenated functional layers (e.g., tunable dielectric BaxSr1−xTiO3). Interestingly, only a few unit cells of the perovskite titanate capping layers SrTiO3, BaTiO3, and Ba0.5Sr0.5TiO3 act as an efficient oxygen barrier and minimize SrMoO3 oxidation into electrically insulating SrMoO4 in the broad range of the thin-film growth parameters. The Mo valence state in SrMoO3, determined by x-ray photoelectron spectroscopy, is used to analyze oxygen diffusion through the capping layers. The lowest level of oxygen diffusion is observed in Ba0.5Sr0.5TiO3. A Ba0.5Sr0.5TiO3 film with a thickness of only 6 unit cells preserves the Mo4+ oxidation state in the SrMoO3 underlayer up to the oxygen partial pressure of 8 mTorr at the temperature of 630 °C. Results, therefore, indicate that SrMoO3 films covered with atomically thin Ba0.5Sr0.5TiO3 remain conducting in an oxygen environment and can be integrated into all-oxide thin-film heterostructures with other functional materials.
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