With their excellent optoelectronic properties, the practical application of single-crystalline organolead halide perovskite materials is now limited by the lack of a method to prepare high-quality perovskite single crystals in large dimension. Herein, we report our development of a low-temperature-gradient crystallization (LTGC) method for high-quality CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite single crystals with lateral dimension as large as two inches. The theoretical analysis suggests that a small temperature gradient should be used to restrain the growth condition, particularly the solution concentration, within the optimal single-crystal-growth (OSCG) zone. The solubility curve as a function of temperature reveals a sharp turning point at ∼60 °C, across which the first-order solubility derivative (dC/dT) shows very different behaviors: below this temperature, the dC/dT changes dramatically as the temperature increases, while above this temperature, the dC/dT enters a plateau where further temperature change has little effect on the derivative, meaning that one can attain both a substantial crystal growth rate and crystallization yield below this temperature. Utilizing this discovery, a MAPbBr 3 single crystal as large as 47 × 41 × 14 mm is obtained with high quality via the LTGC method. The single crystal exhibits the best optoelectronic quality among all MAPbBr 3 materials reported in the literature, including the best trap state density, mobility, carrier lifetime, and diffusion length. These superior optoelectronic properties are further transferred into a high-performance planar photodetector. The device exhibits high operational stability, high external quantum efficiency (13,453%), excellent detectivity as high as 8 × 10 13 Jones, and a fast response speed as quick as 15.8 μs. To our knowledge, both the detectivity and the response speed are the best among all MAPbBr 3 devices reported to date. The unique synthesis method and excellent crystalline quality of the perovskite single crystals make them promising candidates for the next generation of optoelectronic devices.