We present a review of theoretical and experimental results for on-wafer microwave devices. Specifically, we discuss construction of on-wafer inductors designed to operate in frequencies below 1-2 GHz. We also present recent progress in tunable microwave band-stop filters, band-pass filters, phase shifters, and a signal to noise enhancer, all based on a microstrip geometry and using a variety of magnetic thin films and layered structures. These devices are compatible in size and growth process with on-chip high-frequency electronics. For tunable devices based on metallic ferromagnetic films of Fe and Permalloy, the operational frequency ranges from 5 to 35 GHz for external fields below 5 kOe. For the band-stop filters, we observed power attenuation up to ∼100 dB/cm, and an insertion loss on the order of ∼2–3 dB, for both Permalloy and Fe-based structures. We also will discuss the use of thin films of hexagonal ferrites, and liquid crystals/magnetic nano-rods colloids, and show these materials can be used to make on-wafer microwave devices. The devices based on hexagonal ferrite operate in the frequency range 35-70 GHz while devices based on liquid crystal/magnetic nano-rods colloids operate in the frequency range 5 - 110 GHz.
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