Performance Of Organic Thin-film Transistors Research Articles

Towards the Bisbenzothienocarbazole Core: A Route of Sulfurated Carbazole Derivatives with Assorted Optoelectronic Properties and Applications.

Ladder-type molecules, which possess an extended aromatic backbone, are particularly sought within the optoelectronic field. In view of the potential of the 14H-bis[1]benzothieno[3,2-b:2’,3’-h]carbazole core as a p-type semiconductor, herein we studied a set of two derivatives featuring a different alkylation patterning. The followed synthetic route, involving various sulfurated carbazole-based molecules, also resulted in a source of fluorophores with different emitting behaviors. Surprisingly, the sulfoxide-containing fluorophores substantially increased their blue fluorescence with respect to the nearly non-emitting sulfur counterparts. On this basis, we could shed light on the relationship between their chemical structure and their emission as an approach for future applications. Considering the performance in organic thin-film transistors, both bisbenzothienocarbazole derivatives displayed p-type characteristics, with hole mobility values up to 1.1 × 10−3 cm2 V−1 s−1 and considerable air stability. Moreover, the role of the structural design has been correlated with the device performance by means of X-ray analysis and the elucidation of the corresponding single crystal structures.

Key aspects affecting the performances of high-K dielectrics based single-gate and dual-gate OTFTs

The single-gate (SG) and dual-gate (DG) organic thin-film transistors (OTFTs) performances have been analyzed by using high dielectric constant material. The dielectric and gate electrode material variation does the comparative study on SG (bottom-gate bottom-contact configuration) and DG-based OTFTs. Variation in thickness of the dielectric layer (step size 2) and channel length (step size 10) results in a deviation in the performance parameters like threshold voltage, mobility, ION/IOFF current ratio, subthreshold swing, trans-conductance, etc. Such variations in the performance of OTFT have been observed by using 2D numerical devices ATLAS simulator. Subsequently, it is analyzed that reduction in channel length from 50 µm to 10 µm leads to an increase in the drain current from −9.88 × 10−10 A to −5.8 × 10−9 A (in case of DG-OTFT) and from −9.84 × 10−11 A to −5.3 × 10−9 A (in case of SG-OTFT). Similarly, the reduction in dielectric layer thickness from 10 nm to 2 nm leads to an increase in the drive current/the current ratio from 3.9 × 1012 to 1.3 × 1013 (in case of SG-OTFT) and from 1.8 × 105 to 1.5 × 106 (in case of DG-OTFT). So achieving a better result, we switch to DG- OTFT compared to SG-OTFT, which would be helpful in various future applications like chemical sensors, circuits, RFIDs, etc.

N-Type Solution-Processed Tin versus Silicon Phthalocyanines: A Comparison of Performance in Organic Thin-Film Transistors and in Organic Photovoltaics

Tin(IV) phthalocyanines (SnPcs) are promising candidates for low-cost organic electronic devices, and have been employed in organic photovoltaics (OPVs) and organic thin-film transistors (OTFTs). H...

TCAD based study of parameters affecting the electrical performance of organic thin-film transistors

Field effect transistors (FETs) are widely used in integrated circuits of electronic devices. Mostly silicon-based FETs are used for commercial purposes, but with the recent advancement in organic electronics – organic thin-film transistors (OTFTs) have become trending research topics nowadays. Modeling of organic FETs helps in understanding various electrical characteristics of the device such as on current, threshold voltage, off current, on/off ratio, and so on. Optimization of these factors is needed to enhance the working and overall performance of thin-film transistors. In this paper, the comparative study of the device having bottom-gate with electrode contact on top and bottom of organic semiconductor has been done based on the effects of organic semiconductor's thickness variation, dielectric thickness variation, and dielectric material variation on pentacene based organic transistors.

Engineering Cannabinoid Sensors through Solution-Based Screening of Phthalocyanines.

Organic thin-film transistors (OTFTs) have shown promise for a range of sensing applications, with phthalocyanine-based OTFTs demonstrated as sensors for atmospheric parameters, volatile gases, and small organic molecules including cannabinoids. However, the process of fabricating, testing, and optimizing OTFTs in a laboratory setting requires highly specialized equipment, materials, and expertise. To determine if sensor development can be expedited and thus reduce manufacturing burden, spectroelectrochemistry is applied to rapidly screen for molecular interactions between metal-free phthalocyanines and a variety of metal phthalocyanines (MPcs) and the cannabinoids Δ9-tetrahydrocannabinol (THC) or cannabidiol (CBD), with and without a cannabinoid-sensitive chromophore (Fast Blue BB). Spectral analyses are corroborated by 2D-NMR and related to measured OTFT performance. Spectroelectrochemical changes to the Q band region of the phthalocyanine spectra in the presence of analytes can be used to predict the response of OTFTs. Thus, with spectroelectrochemistry, a range of potential materials for OTFT small organic molecule-sensing applications can be quickly analyzed, and phthalocyanines with a preferred response can be selected.

Relationship between the surface structure of the gate insulator and the performance of organic thin-film transistors

To investigate the impact on the device performance of different surface structures of the self-assembled monolayer (SAM) used to form the gate insulator of organic field effect transistors (OFETs), sum frequency generation spectroscopy and contact angle measurements were performed on SAM insulators with different surface structures. Furthermore, the surface structure of the SAM was varied with changing its dipping or spin coating formation method. Moreover, the electrical properties of OFETs were examined when only the surface structure of the gate insulator had changed. The results showed that compared with the dipping method, the disorder of alkyl chains (gauche defects) increased on the octadecylphosphonic acid (ODPA) SAM surface, deposited through the spin coating method. Contact angle measurements revealed that the surface free energy of ODPA-SAM increased in tandem with an increase in gauche defects on the SAM surface. Contrary to expectations, the device performance of OFETs with the SAM insulator with gauche defects improved, which is most probably due to the smaller surface free energy difference between ODPA-SAM and poly(3-hexylthiophene) (P3HT), which improved the adhesion at the ODPA-SAM/P3HT interface.

Selenium-containing core-expanded naphthalene diimides for high performance n-type organic semiconductors

The incorporation of heavy atoms into molecular backbone is an extremely straightforward strategy for fine-tuning the optoelectronic properties of organic semiconductors. However, it is rarely studied in n-type small molecules. Herein, by selenium substitution of NDI3HU-DTYM2, two Se-decorated core-expanded naphthalene diimides (NDI) derivatives DTYM-NDI3HU-DSYM ( 1 ) and NDI3HU-DSYM2 ( 2 ) were synthesized. In comparison with the reference S-containing compound NDI3HU-DTYM2, the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of 1 and 2 were fine-tuned with ∆HOMO of about 0.2 eV, ∆LUMO of 0.1 eV and the narrowed HOMO-LUMO gaps. More surprisingly, the as-spun organic thin film transistors (OTFTs) based on 1 and 2 both showed µ e,sat values as high as 1.0 cm2 V−1 s−1, which are 2-fold higher than that of NDI3HU-DTYM2 with the same device structure and measurement conditions. In addition, the single crystal OFET devices based on Se-containing compound NDI2BO-DSYM2 showed a high µ e,sat value of 1.30 cm2 V−1 s−1. The molecular packing of NDI2BO-DSYM2 in single crystals (two-dimensional supramolecular structure formed by intermolecular Se···Se interactions) is quite different from that of a S-containing compound NDI-DTYM2 (one dimensional supramolecular structure formed by intermolecular π-π stacking). Therefore, the Se substitution can cause dramatic change about molecular stacking model, giving rise to high n-type OTFT performance. Our results demonstrated an effective strategy of the heavy atom effect for designing novel organic semiconductors.

Inverted annealing enhanced performance of organic thin-film transistors and phototransistors based on 2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene

Abstract Thermal annealing is an effective process for regulating the arrangement of liquid crystalline molecules to realize high performance devices. Although, extensive research has been conducted on the development of this technique in recent years, it is still challenging to fine-control the molecular packing and arrangement in thin films. Herein, we propose an inverted annealing approach to address this issue, which successfully improves the performance of organic thin film transistors based on 2-(4-dodecylphenyl) (Bucella et al., 2015) [1]benzothieno[3,2-b]benzothiophene (C12-Ph-BTBT) with ~25% increase in mobility compared to the counterparts with conventional annealing. In addition, the photoelectric properties of C12-Ph-BTBT based phototransistors treated with inverted annealing display a similar improvement, with an enhancement in the highest photoresponsivity from 461.6 A/W for conventionlly annealed devices to 541.7 A/W under the incident beam intensity of 179.2 μW/cm2. This device improvement is mainly ascribed to the gravity induced alignment of C12-Ph-BTBT molecules due to their soft nature at high temperature. Our results provide an effective way to improve the performance of organic electronic devices based on liquid crystalline molecules.

Direct Patterning on Top-Gate Organic Thin-Film Transistors: Improvement of On/Off Ratio, Subthreshold Swing, and Uniformity

Indacenodithiophene-co-benzothiadiazole (ID T-BT), diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPT-TT), and poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4, 5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (N2200) organic thin-film transistors (OTFTs) with a top-gate structure were patterned by simple oxygen plasma treatment instead of conventional processes such as photolithography and inkjet printing. The ungated layer, which is known to cause leakage current paths, was efficiently removed by oxygen plasma treatment. After patterning, the gate leakage current in OTFTs was suppressed below the order of 10−9 A, the on/off current ratio of DPPT-TT OTFTs increased from ${5}\times {10}^{{4}}$ to ${2}\times {10}^{{7}}$ , and the subthreshold swing extracted from N2200 OTFTs decreased from 1.6 to 0.3 V dec−1. All the measured electrical parameters of the patterned OTFTs were distributed in narrower ranges than those of the corresponding non-patterned devices, indicating the high uniformity and reproducibility of the patterned OTFTs. Our low-cost and simple patterning method can be widely used to improve the electrical performance of OTFTs.

Wettability Control of Interfaces for High-Performance Organic Thin-Film Transistors by Soluble Insulating Polymer Films.

Organic small-molecule semiconductors have higher carrier mobility compared to polymer semiconductors, while the actual performances of these materials are susceptible to morphological defects and misalignment of crystalline grains. Here, a new strategy is explored to control the crystallization and morphologies of a solution-processed organic small-molecule semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) using soluble polymer films to control the wettability of substrates. Different from the traditional surface modification method, the polymer layer as a modification layer is soluble in the semiconductor solution during the fabrication of organic thin-film transistors (OTFTs). The dissolved polymer alters the state of the semiconductor solution, which in turn, changes the crystallographic morphologies of the semiconductor films. By controlling the solubility and thickness of the polymer modification layers, it is possible to regulate the grain boundary and domain size of C8-BTBT films, which determine the performances of OTFTs. The bottom-gate transistors modified by a thick PS layer exhibit a mobility of >7 cm2/V·s and an on/off ratio of >107. It is expected that this new modification method will be applicable to high-performance OTFTs based on other small molecular semiconductors and dielectrics.

A facile and novel route to improve TIPS pentacene based organic thin film transistor performance with elastomer

In this study, we report a facile route to regulate the crystallization and enhance charge transport of small-molecule organic semiconductors by blending with a rubbery polymer additive polyisobutylene (PIB). Using a solution-processed semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) to mix with the PIB polymer, we show that the addition of PIB led to densely-arranged, lengthened TIPS pentacene needles with excellent long-range uniformity. Bottom-gate, top-contact organic thin-film transistors (OTFTs) based on TIPS pentacene/PIB hybrid film demonstrated a field-effect mobility of up to 0.15 cm2/Vs, and particularly, a 3-fold and 2-fold enhancement of average mobility and performance consistency (denoted by average mobility to standard deviation ratio). In addition, the effect of hexamethyldisilazane (HMDS) surfactant treatment on the semiconductor charge transport was studied. We ascribe such improved performance of TIPS pentacene/PIB blend OTFTs to the collaborative outcome of reduced crystal misorientation, diminished defects and charge trap centers, as well as a higher areal coverage. The effective method as demonstrated in this work can be generally implemented to attune the crystal growth and promote charge transport of newly-developed small-molecule organic semiconductors.

Ultra-low misorientation angle in small-molecule semiconductor/polyethylene oxide blends for organic thin film transistors

In this work, we report for the first time the use of a nonconjugated semicrystalline polymer as a film-forming agent to control the crystallization and tune the charge transport of solution-processed, small-molecule organic semiconductors. When 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) was demonstrated as a representative material to blend with polyethylene oxide (PEO) polymer, it crystallized into uniformly-aligned needles with reduced random orientation, enhanced long-range order and elevated areal coverage. Specifically, an ultra-low misorientation angle of 7.9° ± 3.5° was obtained with 10% PEO additive, beneficial for charge transport in the TIPS pentacene/PEO hybrid film. Bottom-gate, top-contact organic thin film transistors (OTFTs) based on TIPS pentacene/PEO mixture were found to show a field-effect mobility up to 2.5 × 10−2 cm2/Vs. This work may be universally applied to other organic semiconductors to regulate their crystal formation, enhance film forming and improve device performance of OTFTs. It contributes to the utilization of flexible substrates for future-generation high-performance organic electronics.

Control of dielectric surface energy by dry surface treatment for high performance organic thin film transistor based on dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene semiconductor

We studied organic thin film transistors using vacuum-deposited para-sexiphenyl (p-6P) as a sublayer to reduce the surface energy of the dielectric material. The correlation between the growth mode of a thin film of the organic semiconductor dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene and the number of p-6P sublayers could be explained by a surface energy difference resulting from molecular orientation changes in the p-6P layer. A local surface energy difference was confirmed by measuring the adhesion force using a nanomechanical force measurement method.

Bar‐Coated Organic Thin‐Film Transistors with Reliable Electron Mobility Approaching 10 cm2 V−1 s−1

AbstractThe realization of high‐performance n‐type organic thin‐film transistors (OTFTs) via solution processing remains challenging, while these devices are considered highly desirable as basic elements for organic circuits. Apart from the designing of semiconducting materials, the controlling of thin‐film microstructures using specific processing techniques is also effective to enhance OTFT performance. In this work, bar coating—a meniscus‐guided and high throughput production compatible technique—is utilized to orient a diketopyrrolopyrrole‐based conjugated polymer (P4FTVT‐C32) for uniaxially aligned thin film with large crystalline grains, assisted by polyethylenimine ethoxylated interlayer. The anisotropic molecular arrangement of the bar‐coated thin films is confirmed by X‐ray diffraction, atomic force microscopy, and polarized UV−vis absorption analyses. OTFTs based on the oriented thin films exhibit remarkable charge transport anisotropy. High saturation and linear mobility up to 9.38 and 8.35 cm2 V−1 s−1 along with high on/off ratio of 105–106 is achieved when the electric field is parallel to the coating direction. These are the highest reliable electron mobilities obtained from solution‐processed OTFTs, considering their high reliability factor >80%. These results demonstrate that the electron mobility of conjugated polymers can be significantly improved by proper solution processing at optimized interfaces.

Effect of hydroxyl group in polymeric dielectric layer on the performance of organic thin-film transistors and their application for NO2 gas sensor

Poly(vinyl alcohol) (PVA) as a conventional polymer dielectric material which possesses excellent insulating performance by cross-linking of the hydroxyl-rich group (–OH) has been utilized extensively in organic thin-film transistors (OTFTs). In this work, a novel strategy for OTFTs, constructing with tandem dielectric films, is studied. The air stability of OTFTs can be conveniently modulated by the construction of tandem dielectrics. Herein, with the optimization for the dielectric structures and interface engineering, a holistic understanding of the hydroxyl group for the performance of OTFTs and OTFT-based gas sensors is provided. Implementing the interface properties affords double dielectric OTFTs that deliver a remarkable responsivity for 10 ppm NO2 nearly 62% and triple dielectric OTFTs that maintain a slight fluctuation in their electrical performance during 10-day atmospheric storage, respectively. The enhancement of air stability of OTFTs and sensing performance for NO2 can be attributed to the passivation controlling effect of PVA, and these results demonstrate that the simple and effective method provides new insight into the design of functional groups of organic dielectric materials for high-performance, air-stable OTFTs and high responsivity for OTFT-based gas sensors.

Current progress in electrode/pentacene interfaces of pentacene-based organic thin films transistors: A review

Organic thin-film transistors (OTFTs) in device physics is currently considered as a standout amongst the most progressive concepts of device applications. Currently, due to humongous technological progress, OTFT with high mobilities can be produced that are comparable to silicon technology. This remarkable mobility is considered as a benchmark for more demanding applications which is accomplished by novel, tenable organic semiconductor materials such as pentacene and the tailoring of their geometries and characteristics. In addition, pentacene demonstrates charge carrier mobilities up to 5.5 cm2/Vs. However very low mobility was achieved in OTFTs due to fabrication defects, material processing etc. The most important defect that arise during the fabrication process is contact interfaces in OTFTs, which highly effect the device performance. Thus, in this article, we will review the current progress of contact engineering of OTFTs with special emphasis on electrode/pentacene interfaces of pentacene-based organic thin film transistors. Further, this review aims to provide an in-depth understanding of bottlenecks to improve the OTFTs performance. After a short introduction, the historical background of pentacene-based OTFTs is discussed that focuses on different methods and materials employed so far to improve the contact between pentacene layer. Also, the review presents the key challenges in the geometry of pentacene based OTFT that is the direct deposition of metal electrodes onto the pentacene channel layer in top contact interface due to which poor carrier injection, high barrier height, chemical diffusion between both layers, high contact resistance and surface roughness has been observed which highly affects the device performance especially the field effect mobility. Also, the state-of-the-art devices and related models that widely employ pentacene are presented. This detailed review will assist the future researchers in understanding and improving field-effect properties of OTFTs.

Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation.

Polymer dielectric materials with hydroxyl functionalities such as poly(4-vinylphenol) and poly(vinyl alcohol) have been utilized widely in organic thin-film transistors (OTFTs) because of their excellent insulating performance gained by hydroxyl-mediated cross-linking. However, the polar hydroxyl functionality also deleteriously affects the performance of OTFTs and significantly impairs the device stability. In this study, a sub-20 nm, high-k copolymer dielectric with hydroxyl functionality, poly(2-hydroxyethyl acrylate-co-di(ethylene glycol) divinyl ether), was synthesized in the vapor phase via initiated chemical vapor deposition. The inherently dry environment offered by the vapor-phase polymer synthesis prompted the snuggling of polar hydroxyl functionalities into the bulk polymer film to form a molecular thin hydrophobic skin layer at its surface, verified by near-edge X-ray absorption fine structure analysis. The chemical composition of the copolymer dielectric was optimized systematically to achieve high dielectric constant (k ≈ 6.2) as well as extremely low leakage current densities (less than 3 × 10-8 A/cm2 in the range of ±2 MV/cm) even with sub-20 nm thickness, leading to one of the highest capacitance (higher than 300 nF/cm2) achieved by a single polymer dielectric to date. Exploiting the structural advantage of the cross-linked high-k polymer dielectric, high-performance OTFTs were obtained. Notably, the spontaneously formed molecular thin, hydrophobic skin layer in the copolymer film substantially suppressed the hysteresis in the transistor operation. The trap analysis also suggested the formation of bulk trap with a high energy barrier and sufficiently low trap densities at the semiconductor/dielectric interface, owing to the surface skin layer. Furthermore, the OTFTs with the -OH-containing copolymer dielectric showed an unprecedentedly excellent operational stability. No apparent OTFT degradation was observed up to 50 000 s of high constant voltage stress (corresponding to the applied electric field of 1.4 MV/cm) because of the markedly suppressed interfacial trap density by the hydrophobic skin layer, together with the current compensation by the bulk hydroxyl functionalities. We believe that the surface modification-free, one-step polymer dielectric synthetic strategy will provide a new insight into the design of polymer dielectric materials for high-performance, low-power soft electronic devices with high operational stability.

Poly(α-methylstyrene) polymer and small-molecule semiconductor blend with reduced crystal misorientation for organic thin film transistors

The electrical performance of solution-processed, small-molecule organic semiconductors is largely restricted by their severe charge carrier mobility variations. In this work, we demonstrate an effective method to reduce such variations of the semiconductor mobilities and improve the performance consistency of organic thin film transistors (OTFTs) by adding poly(α-methylstyrene) (PαMS) as a polymer additive. By using 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) as an example, we found that while pristine TIPS pentacene film exhibited random crystal orientation and large film gaps, the addition of PαMS polymer promoted the growth of semiconductor crystals, which formed uniformly aligned needles with significantly improved orientation and coverage within the channel regions. An ultra-low misorientation angle of 2.2° ± 1° was obtained from TIPS pentacene/PαMS blend film, which is a 20-fold reduction as compared to pristine TIPS pentacene. Bottom-gate, top-contact OTFTs with TIPS pentacene crystals aligned perpendicularly from source to drain contact electrodes demonstrated a hole mobility of up to 0.26 cm2/V s, as well a 6-fold enhancement of average mobility as compared to the pristine TIPS pentacene based counterparts. Notably, the addition of PαMS led to a performance consistency factor of 3.35, as defined by the ratio of the average mobility to standard deviation, implying a great reduction of charge carrier mobility variations. The improvement of electrical performance of OTFTs can be attributed to the combined outcome of crystal rigid alignment, extended long-range order, and almost full coverage of charge transport channel.

(Invited) High-Frequency Operation of Vertical Organic Field-Effect Transistors

Organic thin-film transistors (OTFT) are attracting great interest in view of flexible electronics enabling future revolutionizing applications such as flexible displays or wearable electronics. Due to the poor intrinsic charge carrier transport in organic semiconductor thin-films, the main target of development in the last two decades was to find suited semiconductor materials offering a higher charge carrier mobility. However, although record values of clear beyond 10cm²/Vs have been demonstrated, key transistor parameters such as the transconductance or transition frequency have not been improved substantially. In consequence, the performance of today's OTFTs is still too low for many demanding electronic applications. In the last couple of years we have develop various architectures for vertical organic transistor offering superior current driving capabilities compared to state-of-the-art horizontal organic TFTs. Within this 3-dimensional VOFET geometry, the channel length is not defined by the applied patterning technique but rather by the thickness of the organic layers, typically <300nm, separating the vertically stacked source and drain electrodes. This ultra-short channel configuration allows for superior current driving, however, it is usually accompanied by undesired short-channel effects such as loss of saturation and an increased off-current level. In my presentation I introduce the VOFET concept and highlight the development of optimized transistor geometries leading to superior performance with an on/off ratio>10⁷, transition frequency approaching 100MHz and excellent operational stability. In the second part of the contribution I focus on the potential of VOFETs for active matrix OLED (AMOLED) display driving. Comparing typical TFT design guidelines for vertical and horizontal TFTs, it can be deduced that the VOFET design leads to a considerable reduction of area consumption within a pixel which ultimately enables a higher display resolution and a lower power consumption. The concept of vertical transistors is not restricted to organic semiconductors. Hence, I discuss in the third part of my presentation the potential of high mobility metal-oxide semiconductors for vertical thin-film transistors for GHz operation.

Transport models in disordered organic semiconductors and their application to the simulation of thin‐film transistors

AbstractRelevant organic thin‐film transistor (OTFT) simulation software must account for the main specificities of organic semiconductors (OSCs) in terms of free carrier density of states, transport mechanisms and injection/collection properties from/to the device contacts. Among the parameters impacting the OTFT performance carrier mobility is a key parameter. Usual methods to extract the mobility from current–voltage measurements lead to only an apparent, or effective, mobility. The value of the apparent mobility is different from the intrinsic channel OSC mobility. Although the effective mobility actually determines most of a given device performance, therefore providing a very useful technology benchmark, it does not describe the intrinsic OSC material transport properties, and may even be misleading in the route to improving the OTFT fabrication process. To obtain a better understanding of the transport properties in OSCs using OTFT electrical characterization, implementing an appropriate physical mobility model in OTFT current–voltage simulation software is mandatory. The present paper gives a review of the carrier mobility models which can be implemented in OTFT simulation software. The review is restricted to analytical and semi‐analytical physical models taking into account the temperature, the carrier concentration and the electric field dependence of the carrier mobility in disordered OSCs. © 2019 Society of Chemical Industry