Analysis Of Performance Degradation Research Articles

The Analysis of p-MOSFET Performance Degradation due to BF2Dose Loss Phenomena

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.ጌЀ؀㜹㐮㠻䠰㄀

Analysis of System Performance Degradation Using Sinusoidally Modulated Signal in Optical Fiber Communication Systems

The response of a single-mode fiber to a sinusoidally modulated input has been studied to see its utility in measuring system performance in the presence of fiber nonlinearities. The sinusoidally modulated signal models an alternating bit sequence of ones and zeros in on-off keying. The sinusoidal response of normally dispersive fiber shows a strong correlation with eye-opening penalty (EOP) over a wide range of the nonlinearity parameter N (0.1 ＜ N $^2$ ＜ 100). This result implies that the measurement of the sinusoidal response can be an alternate way of measuring EOP without having a long sequence of randomly modulated input bits. But in the anomalous dispersion region, the sinusoidal response has a much more limited range of application to estimate system performance.

F/sub T/ integrator-a new class of tuneable low-distortion instantaneous companding integrators for very high-frequency applications

A novel design methodology for realizing tuneable very high-frequency low-distortion integrators is presented, which we call the f/sub T/ integration. The technique, which is a special ease of the companding technique, not only achieves integrator linearization but also offers similar advantages to the distributed CMOS transistor-only filtering technique in terms of chip area and very high-frequency operation. The operating principle of the f/sub T/ integrator is both explained via a circuit model and a dynamic charge control model in which the physical mechanism underlying the f/sub T/-integration technique is revealed. Detailed analysis of performance degradation due to nonideal effects as well as some design considerations are discussed and means for improvement are proposed. A fully balanced f/sub T/ integrator with frequency tuneability and adjustable DC gain is then developed. Promising results, particularly in terms of tuneability, linearity, and high-frequency performance, were obtained from both preliminary experimental results using a circuit prototype and simulations using HSPICE, confirming the viability of the technique for high-frequency and high-performance filter applications.

An analysis of network performance degradation induced by workload fluctuations

Presents an analysis of network performance degradation induced by workload fluctuations. The basic idea of the analysis is based on catastrophe theory. Conventional performance models typically express workload only by using its average properties. However, it may not be possible to predict network performance simply by using average workload properties, since computer networks are nonlinear systems and workload of computer networks usually fluctuates intensely. The interaction between workload fluctuations and the nonlinearity may greatly affect network behavior. The present analysis shows that fluctuations in workload may change the dynamic structure of the system state space and cause the network performance to vary drastically.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Statistical analysis of performance degradation of lead—acid battery under simulated electric vehicle operations

Controlled laboratory tests were conducted to evaluate the effects of selected electric-vehicle application factors on the performance and life of lead

Analysis of Performance Degradation in CdS Solar Cells

The effect of changes in five physically meaningful parameters on the I-V (current-voltage) curve of a CdS solar cell is calculated. Comparisons between the calculated data and performance data obtained from degraded solar cells are made. The parameter that changed to cause the degradation in each cell becomes apparent.