It is always a challenge for failure analysis engineer to localize leaky polysilicon gate. One of the common method is to use Passive Voltage Contrast (PVC). If the leakage is low and falls below luA (<luA), it may be difficult to show the contrast between good and bad polysilicon gate using PVC. In this paper, techniques such as secondary/ion image PVC from Scanning Electron Microscope (SEM)/Focus Ion Beam (FIB) and electrochemical wet etching in KOH:H20 solution are used to detect the leaky polysilicon gate. The latter is used specially for physical detection, thus enhancing the confidence level of analysis. Both techniques will be used in complimentary manner as a failure analysis tool to detect leaky polysilicon gate.