We demonstrated that the movement of the single ceria particles located at the glass interface could be imaged in situ using evanescent wave (EW) microscopy. (1,2) Here, the flat glass surface of the lens became our model for the SiO2 film surface of interest. 3D trajectories, diffusion coefficients, and interactions of ceria particles with a glass surface at pH 3, 5, and 7 were investigated using EW microscopy. We also defined the types and characteristics of particle motions by analyzing the mean-square displacement (MSD) versus time curves. (1)The removal of single ceria particles from the glass films in the cleaning solution was monitored in situ using EW microscopy coupled with a brush set-up. In situ measurement data collected during cleaning are likely to provide more important insights into the underlying mechanisms of various complex reactions that occur at the particles/brush–wafer interface. (3)This talk will also introduce lateral force microscopy (LFM) mode in the atomic force microscopy (AFM) to obtain the removal force of single ceria particles from the SiO2 film. LFM is a powerful tool to monitor the torsion bending (or twisting) of the cantilever with contact mode, which is corresponding to the removal force. Types of particle removal mechanism depending on the characterization of single particles (size, shape, and surface) will be discussed. Our results will provide a better understanding of how the abrasive particles, the additives, and the film surfaces interact together during cleaning.(1) Seo, J., Gowda, A., Khajornrungruang, P., Hamada, S., Song, T., & Babu, S. (2020). Trajectories, diffusion, and interactions of single ceria particles on a glass surface observed by evanescent wave microscopy. Journal of Materials Research, 35(3), 321-331.(2) Seo, J., Gowda, A., Khajornrungruang, P., Hamada, S., & Babu, S. (2020). 3D trajectories and diffusion of single ceria particles near a glass surface and their removal. Journal of Materials Research, 1-10.(3) Seo, J. (2020). A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization. Journal of Materials Research, 1-23.