Photodiode Parameters Research Articles

Inspection and comparative analysis of light and thermal response dynamics of Cu/V₂O₅/n-Si and Cu/La-V₂O₅/n-Si MIS diodes

Schottky Barrier Diodes (SBDs) are pivotal in modern electronics for their quick switching and low forward voltage drop, enabled by metal-semiconductor junctions. SBDs are renowned for their performance, primarily due to their metal-semiconductor intersection. This study focuses on Cu/V2O5/n-Si and Cu/La-V2O5/n-Si SBDs, examining the impact of lanthanum doping on their performance. Transition Metal Oxides (TMOs) like Vanadium Pentoxide (V2O5) offer unique electronic, magnetic and optical properties making them suitable for various applications. The fabrication process involved sol-gel spin coating and DC magnetron sputtering to create a thin V2O5 layer on n-type silicon wafers, followed by copper contact deposition. Galvanizing temperatures ranged 300° C to 500° C to study the structural, optical, and morphological changes in V2O5 thin films. Key findings include the significant reduction in ideality factor (n) with increasing annealing temperatures for Cu/V2O5/n-Si SBDs, reaching as low n value of 5.26 at 500°C, indicating improved device performances. For Cu/La-V2O5/n-Si SBDs, the ideality factor consistently decreased with higher light intensities, showcasing enhanced performance due to La doping. Barrier height (ɸB) also varied, with higher values observed for La-doped V2O5, enhancing charge recombination and increasing oxygen vacancies. Photodiode parameters were significantly enhanced by doping of the La. The Cu/La-V2O5/n-Si SBDs demonstrated high photosensitivity (PS = 3327.5 %), photo responsivity (R = 33.39 mA/W) and detectivity (D* = 9.82 × 10¹⁰ Jones), making them highly efficient for optoelectronic applications. Overall, this study highlights the potential of Cu/La-V2O5/n-Si SBDs for high-efficiency, optoelectronic applications, with optimized doping concentrations and annealing conditions significantly improving their performance.

The effects of Ppy-silicene composite on the performance of n-/p-type silicon semiconductor-based photodiodes

The advancement of electronic technology is accelerated by the discovery of two-dimensional materials, and it also becomes a prompting area for researchers to focus on exploring their alternatives. In these research activities, silicene attracts significant attention due to its potential in various electronic applications. In addition, polypyrrole (PPy), belonging to the class of intrinsic conducting polymers, is another important material preferentially used in this technology. In this study, a composite material prepared in the form of Ppy:silicene is applied between metal and semiconductor. The resulting Ppy:silicene/p-Si and Ppy:silicene/n-Si photodiodes are discussed according to their diode responses. Structural characteristics of fabricated silicene based layer material are determined by X-ray diffraction technique. Device behaviors of the fabricated devices are mainly analyzed in response to incident light. At this characterization step, electrical measurements are conducted in a dark environment and under different light intensities ranging from 20 to 100mW/cm2. For instance, the Ppy-Silicene/p-Si device exhibited a barrier height of 0.57eV and an ideality factor of 3.1, compared to the Ppy-Silicene/n-Si device, which showed a barrier height of 0.55eV and an ideality factor of 4.9. Characteristic photodiode parameters, such as light sensitivity, responsivity, and detectivity are obtained through current-voltage/time measurements depending on power of light. In addition to these parameters, performance-determining parameters for the diodes as barrier height, series resistance, and ideality factor are investigated according to thermionic emission and Cheung's approaches. The results indicate that the performance of the Ppy-Silicene/p-Si photodiode is significantly more effective than that of the photodiode produced with n-Si substrate. As a result of these experimental works, the fabricated Ppy-Silicene composite material and its diodes, especially on p-Si, can be evaluated as a promising candidate for optoelectronic technology.

Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance

In this study, Cu/n-Si Schottky diodes with V2O5–Y insulating interface layer were designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of different Y–V2O5 interface layers placed between metals and semiconductors on the critical electrical parameters of Schottky diodes were examined. Electrical parameters of the prepared sample such as barrier height (ΦB), ideality factor (n), photosensitivity (Ps), photosensitivity (R), quantum efficiency (QE) and detectivity (D∗) were obtained from the expression. Characteristics of I–V The modification in these parameters can be attributed to the use of Schottky diodes as intermediate layers. Additionally, n, ΦB values were calculated using the thermionic emission process and the photodiode parameters Ps, R, QE and D∗ the results were compared with each other. Experiments have shown that the Schottky structure with V2O5–Y interlayer leads to higher values of Ps = 799.70 % and under the light condition of 6 wt% of Y lower value n = 2.01. This provides evidence of the improved performance of MIS models.

Solvent-Directed Bioactive Supramolecular Zinc(II)-Metallogels: Exploring Semiconducting Aptitudes of Fabricating p-n Junction and Schottky Devices.

α-Ketoglutaric acid-based supramolecular Zn(II) metallogels in N,N'-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) solvent (i.e., Zn-α-Glu-DMF and Zn-α-Glu-DMSO) were successfully achieved. Zinc(II) acetate salt and α-ketoglutaric acid directed a three-dimensional noncovalent supramolecular network individually entrapped with N,N'-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) solvent to accomplish their respective semisolid flexible metallogel frameworks. The gel features of these synthesized materials were verified by rheological experiments such as amplitude sweep and frequency sweep measurements. The discrete morphological arrangements were analyzed for these metallogel samples through field emission scanning electron microscopic (FESEM) analysis. Highly stacked interconnected blocks of Zn-α-Glu-DMF with hierarchical arrays are found due to the occurrence of diverse noncovalent supramolecular interactions present in the metallogel framework. A distinct spherical shaped microstructure with interconnected hierarchical assembly has been observed for the FESEM pattern of Zn-α-Glu-DMSO. FTIR spectroscopic measurement was carried out to detect some important stretching vibrations of xerogel samples of different metallogels as well as gel-constructing chemical ingredients. A substantial amount of peak shifting of xerogel samples for both metallogels is observed in FTIR analysis, indicating the presence of different noncovalent interactions. ESI-mass analysis portrays a possible metallogel-constructing strategy. The antibacterial potentialities of both metallogels were investigated. These materials exhibited good antimicrobial efficacy toward Gram-positive and Gram-negative bacterial strains (including Escherichia coli, Bacillus cereus, Staphylococcus aureus, Listeria monocytogenes, and Salmonella typhimurium). Both synthesized metallogels were successfully implemented to fabricate the photoresponsive semiconducting diode. These materials offer excellent photodiode parameters including an ideality factor and rectification ratio (ON/OFF ratio). Synthesized metallogels are used to successfully fabricate photodiodes with an Al/p-Si/metallogel/Au structure. The ideality factors (η) for Zn-α-Glu-DMF and Zn-α-Glu-DMSO are found as 1.3 and 2.3, respectively, in dark conditions. The rectification ratios for Zn-α-Glu-DMF and Zn-α-Glu-DMSO metallogels are also determined, and these are found as 40 and 10, respectively.

Standardizing the optimal photo-diode performance of CuO nanostructures through various morphological patterns

The CuO nanocrystals were prepared using a simple surfactant-assisted co-precipitation technique then addition of anionic surfactants such as Hexamine (HEX), Polyvinyl Pyrrolidone (PVP), Polyvinyl Alcohol (PVA) and Cetyl Trimethyl Ammonium Bromide (CTAB) leads to the formation of CuO nanostructures on the surface of spherical particles. Samples were characterized via X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR), Field Emission Scanning Electron Microscopy (FESEM), UV–visible diffuse reflectance spectroscopy and I-V characteristics. According to various spectroscopic results, all surfactant decorated CuO nanocrystal have a monoclinic crystal structure. Then the average grain size of CuO samples supported by HEX, PVA, PVP and CTAB is approximately 72 nm. The properties of surfactants have been shown to affect size and shape. In addition, the FT-IR spectra of all samples show three similar vibration modes of CuO, this indicates the presence of a monoclinic CuO crystal structure. According to absorbance data, the quantum confinement effect caused by the use of surfactant significantly affects the optical bandgap value, ranging from 3.00 to 2.59 eV. Current-voltage characteristics [I-V] unveil the photodiode parameters of prepared diode are evaluated in the dark and light condition. In this case, the barrier height (ΦB) is 0.80 eV and the ideal value for the diode (n) is 2.05, which is more suitable for photodiode applications.

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Silicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.

Augmented photovoltaic performance of Cu/Ce-(Sn:Cd)/n-Si Schottky barrier diode utilizing dual-doped Ce-(Sn:Cd) thin films

In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on dual doped Ce-(Sn:Cd) (1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis of transparent glass and silicon substrates using a low-cost nebulizer, ideal substrate temperature is 450 °C and the structure, optics, morphology & electrical properties of the films were characterized by X-Ray Diffractometer, Atomic Force Microscope and Ultra Violet - Visible spectral, electrical and I–V properties of diodes. All dual doped thin films are the cubic structure, as revealed by the XRD pattern. Then the roughness and smoothness of the film were then revealed by atomic force microscopy (AFM). Ultraviolet–vis spectroscopy is formed on optical absorption and band gap energy (3.91 eV) also electrical conductivity increases Cd concentration of films corresponding activation energy diminish. Current-voltage properties [I–V] and photodiode parameters of Cu/Ce-(Sn:Cd)/n-Si diodes were evaluated in the dark and light. The barrier height (ФB) for the diode fabricated was initiate to be 0.69 eV, as well as ideality factors (n) 2.57 of the diode parameters. As a consequence, the 5 wt% of Cd parade greater device performance for the photodiode applications, the present study is first combination of dual doped samples and low cost JNSP technique.

Effect of molar concentration on optoelectronic properties of NiO nanoparticles for p-n junction diode application

In this work, fine nickel oxide nanoparticles (NiO NPs) were successfully made utilizing a straightforward co-precipitation approach at low temperature. The effects of precursor concentration on the structural, optical, and electrical characteristics of NiO nanoparticles were investigated. All indexed diffraction peaks in XRD demonstrate the production of NiO with cubic structure. An increase in NiO crystallite size above 16.8 nm was observed when the precursor concentration exceeds 2 M, suggesting the presence of nanostructure in the final product. In FT-Raman spectra, the band centered at ∼ 500 cm–1 is due to Ni-O stretching (LO) mode, and two-magnon (2 M) scattering mode causes the band at 1514 cm–1. The synthesized product is composed of almost rod-shaped particles with a size range of 10–20 nm, according to FESEM pictures. The UV absorption studies showed a high absorption at the fundamental absorption edges originating at 332 nm, which gradually shifted to a lower energy region up to 400 nm with increasing precursor concentration, which means a reduction in bandgap values. The effect of precursor concentration associated with the electrical characteristics of the produced NiO nanoparticles has been investigated for the temperature range 30 to 130 °C. The I-V characterization was used to compute the different photo-diode parameters including n, ФB, Io, PS, R, QE, and D* . The remarkable high photosensitivity of 1100% and specific detectivity of 4.324 × 10−10 Jones for the diode evaluated at 120 mW/cm2 was observed in a 2 M fabricated diode. These findings imply that all the fabricated diodes are exceptionally light-sensitive and are well-suited for upcoming UV photodetector applications.

Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta

Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta

Parameter extraction for photodiode equivalent circuit model based on hybrid genetic algorithm

Photodiode equivalent circuit models often involve numerous parameters, making the parameter extraction process complex. Therefore, this work presents a hybrid genetic algorithm (HGA) to extract photodiode parameters. Firstly, we deduce the calculation formula of the scattering parameters of the photodiode equivalent circuit model. Then, to address the limitations of the standard genetic algorithm (SGA) that its slow convergence and extended search times, we incorporate the elite strategy and acceleration operator, enhancing the local search ability of HGA. We compare the performance of the HGA with the other four optimization algorithms under multiple sets of measured data. Results show that HGA has better performance in parameter fitting, convergence speed, and accuracy from 10 MHz to 40 GHz, highlighting its superiority. The algorithm significantly simplifies photodiode parameter extraction, and provides a feasible solution for the parameter extraction of optoelectronic devices.

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

Graphene oxide (GO) doped poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) interlayered Al/p-Si Schottky barrier diodes (SBDs) were manufactured by spin coating technique and investigated for the effects of GO concentration on electrical and photodiode parameters. The current–voltage (I-V), measurements for the different mass ratios of GO:P3HT:PCBM (0:1:1(S1), 0.5:1:1(S2) and 2:1:1(S3)) used diodes allowed the determination of key electrical parameters, including ideality factor (n), barrier height (Φ B ), series resistance (R s ), shunt resistance (R sh ), interface states density (N ss ) and optical sensing behaviors in dark and different illumination levels (10, 30, 60, 80 and 100 mW cm−2). The rectification ratio (RR) was found to be in the order of 104. The trends obtained for the n, Φ B , R s /R sh and N ss show that these are influenced by the contribution of the GO. Observed increasing behavior of reverse current with increasing illumination shows that this SBDs can be use as photo-diodes/sensors/detectors. On the other hand, it was observed that the linear dynamic range (LDR), which is important parameter for image sensors, increased (6.86, 16.95 and 26.98 for S1, S2 and S3, respectively) with increasing GO contribution. In addition, to investigate and compare in more detail, capacitance–voltage (C-V) and conductance-voltage (G-V) measurements used for the determination of diffusion potential (V D ), concentration of dopant acceptor atoms (N A ), Fermi energy level (E F ), depletion layer width (W D ) for low frequency (1 kHz) and high frequency (1 MHz). The measured capacitance values showed a high value at the low frequency in comparison with the high frequency. This behavior explained on the basis of N ss . The findings suggest that the prepared diodes has the potential to serve as a photo-diodes/sensors/detectors for optical sensing applications.

Investigation of electrical, photodiode and photovoltaic properties of Au/SiO2/n-Si structures with GO and P3C4MT interface

This study mainly focused on investigating the electrical and photodiode properties of Au/SiO2/n-Si heterostructures with graphene oxide (GO) and poly(3-cyclohexyl-4-methyl-2,5-thiophene) (P3C4MT) interface. For this, GO and P3C4MT thin layer was grown as an interfacial layer between Au and SiO2/n-Si to create this Au/(GO:P3C4MT)/SiO2/n-Si hetero structure. From the current–voltage (I–V) measurements, the values of electrical and photodiode parameters such as ideality factors (n), rectification ratios (RR), saturation currents (I0), barrier heights (Φbo), photocurrent (Iph), photosensivity (RR), photoresponse (R), and detectivity (D*) were examined under dark and variable illuminations (from 20 to 100 mW/cm2 by 20 mW/cm2 steps) at room temperature, respectively. Au/(GO:P3C4MT)/SiO2/n-Si heterostructure exhibited a photoconducting behavior under variable illuminations. Furthermore, the photovoltaic properties such as short circuit current (Isc) and open circuit voltage (Voc) were examined under variable illuminations intensities. The experimental results shows that Au/(GO:P3C4MT)/SiO2/n-Si hetero structure under light illumination exhibits a perfect photodiode behavior, and thus this structure can be used as photodiode in optoelectronic devices.

The photodetection properties of a ruthenium electro-optic device for organic material-based device industry

The electrical properties and effect of illumination on the photodetection properties were investigated for the fabricated device with Ru(II)-pydim complex interface layer. The Ru(II)-pydim interface was deposited by spin coating technique on a p-silicon substrate. The electrical and optoelectrical parameters of photodiode were analyzed via the current-voltage (I–V), capacitance/conductance-voltage (C/G-V) measurements under dark and different illumination power. The fabricated device has good electrical parameters such as the rectification ratio of 2.726 × 104, the ideality factor of 1.328, and barrier height of 0.805 eV under the dark condition. The current values of the device with Ru(II)-pydim interface at reverse bias were strongly dependent on the illumination intensities, confirming its photoconduction behavior. The I–V measurements under different solar illuminations present that the electro-optic device with Ru(II)-pydim complex as an interface has good photodiode parameters with the responsivity of 131 mA/W, and the detectivity of 1.63 × 1011 Jones at 100 mW/cm2. The photo transient measurements demonstrate that the Ru(II)-pydim complex based photodiode presents the desired photo-switching property. Therefore, the prepared Ru(II)-pydim based device can be used for electro-optic and photonic applications, particularly in the rapidly developing organic material-based device industry.

High-responsivity silicon p–i–n mesa-photodiode

Silicon p–i–n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso-technology were investigated. Photodiodes with a meso-structure have higher responsivity and lower capacitance than samples made by conventional planar technology.

The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer

To date, the number of publications on NDI-based small molecules is almost identical to the number of publications on NDI-based polymers. As opposed to the polymer examples, the design of NDI-based small molecules can be easily sub-categorized into axial (a) and core (c) substituted geometries, and have a practical use. For this purpose, in this study, initially, the symmetric and asymmetric axially-substituted-NDI-based small organic ligands (aNDIs 1A-1G) were synthesized as novel interface layers, and the values of atomic charges, geometry, dipole moment, and thermodynamical properties were calculated with DFT methods. Thus, initially, the theoric and experimental band gap values were calculated with DFT/TD-DFT and UV–Vis measurements, respectively. The theoretical band gap was found to be between 3.5 eV and 3.6 eV and the experimental band gap was found to be between 3.15 eV and 3.17 eV. Following synthesis and theoretical studies, the electrical and photophysical performances of naphthalene diimide-appended diode and photodiode devices (D1-D7) have been discussed with an analytical overview. For this, initially, the aNDIs, organic photodiodes, were fabricated with a thermal evaporation system, and the surface morphologies were examined with AFM for each interface layer. Due to the very small roughness values, about 1.8–2.1 nm, it was concluded that the thermal evaporation method is a suitable method for growing these structures. Following the fabrication of devices, the diode and photodiode parameters were investigated with current–voltage measurements at dark and different illumination conditions. The temperature-dependent performances of the fabricated devices were investigated at 100 K, 200 K, and 320 K. Additionally, the capacitance characteristics were investigated with the impedance spectroscopy method. As a result of all these studies, in addition to the literature for effective synthesis of symmetric and asymmetric aNDIs as simple structured photodiode candidates, besides the effective synthetic touches, the wide-range behavioral differences of these photodiode candidates of different natures have been investigated comparatively.

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

AbstractThis work reports, for the first time, on radiation resistance of state‐of‐the‐art multicomponent Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 perovskite photodiodes, tested under high‐intensity pulsed 170 keV proton irradiation with fluence up to 1013 protons cm−2. The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 1012 protons cm−2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 1013 protons cm−2 deteriorates photodiode parameters on average by only 25% with respect to that of the as‐prepared devices. The revealed high‐performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low‐cost solution‐processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

Determination of the responsivity of a predictable quantum efficient detector over a wide spectral range based on a 3D model of charge carrier recombination losses

We present a method to determine the internal quantum deficiency (IQD) of a predictable quantum efficient detector (PQED) based on measured photocurrent dependence on bias voltage and a 3D simulation model of charge carrier recombination losses. The simulation model of silicon photodiodes includes wafer doping concentration, fixed charge of SiO2 layer, bulk lifetime of charge carriers and surface recombination velocity as the fitted parameters. With only one set of physical photodiode defining parameters, the simulation shows excellent agreement with experimental data at power levels from 100 μW to 1000 μW with variation in illumination beam size. We could also predict the dependence of IQD on bias voltage at the wavelength of 476 nm using photodiode parameters determined independently at 647 nm wavelength. The fitted values of doping concentration and fixed charge extracted from the simulation model are in close agreement with the expected parameter values determined earlier. At bias voltages larger than 5 V at the wavelength of 476 nm, the internal quantum efficiency of one of the tested PQEDs is measured to be 0.999 970 ± 0.000 027, where the relative expanded uncertainty of 0.000 027 is one of the lowest values ever achieved in spectral responsivity measurement of optical detectors.

Improvement of parameters of micro-pixel avalanche photodiodes

The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.

Performance Evaluation of Type-II Superlattice Devices Relative to HgCdTe Photodiodes

At present stage of infrared (IR) detector technology, two material systems, type-II superlattices (T2SLs) and HgCdTe ternary alloys, are used in fabrication of both mid- and long-wavelength IR arrays. The proposal of a new metric, the so-called “Law 19,” motivates the estimation of the potential performance of HgCdTe photodiodes compared to that of T2SL photodetectors. In these circumstances, the evaluation for assessing the merit of HgCdTe detectors relative to novel III–V devices with respect to performance may change. This work attempts to estimate the change in the performance of HgCdTe photodiodes relative to T2SL detectors. The main comparative efforts concern such photodiode parameters as dark currents and noise equivalent temperature differences.

Synthesis of electron-rich thiophene triphenylamine based organic material for photodiode applications

In this paper, a new electron-rich π-conjugated organic material, 4,4'-(thiophene-3,4-diyl)bis(N,N-diphenylaniline) (bisTPAT), which contain thiophene skeleton as the central core with bistriphenylamine side groups as the electron-rich unit and/or donor groups at the 3- and 4-positions, was designed for photodiode application. The bisTPAT was efficiently synthesized via the Pd-catalyzed Suzuki coupling reaction between 3,4-dibromo-thiophene (3) and (4-(diphenylamino)phenyl)boronic acid 4. Structural, optical, and chemical features of the bisTPAT material and thin film form -was characterized by NMR, FTIR, HRMS, UV–Vis spectroscopy, and SEM/EDX analysis techniques. Subsequently, bisTPAT/n-Si device fabrication was carried out by using the spin coating method. Current-voltage (I–V) measurements were performed to determine the characteristic properties of the device under different operating conditions. According to I–V measurements taken under illumination conditions, the fabricated device has photoresponse characteristics in the reverse bias region. Therefore, the fabricated device can be employed as a photodiode for optoelectronic applications. Additionally, the photodiode parameters, such as ideality factor (n), barrier height (Φb), series resistance (Rs), photosensitivity (S), photoresponsivity (R), photodetectivity (D*), open-circuit voltage (Voc), and short-circuit current (Isc), were analyzed under the light intensity of 100 mWcm−2. Finally, capacitance-voltage (C–V) measurements were carried out to obtain important information about the diode's interfacial characteristics at different frequencies. The results show that the calculated parameters such as diffusion potential (Vd) and carrier concentration are sensible to frequency changes.