High-responsivity silicon p–i–n mesa-photodiode

Abstract

Silicon p–i–n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso-technology were investigated. Photodiodes with a meso-structure have higher responsivity and lower capacitance than samples made by conventional planar technology.