Parabolic Band Approximation Research Articles

The effect of hydrostatic pressure, temperature and impurity factor on linear and nonlinear optical properties of InxGa1-xAs tuned quantum dot with modified Gaussian potential under the action of a vertical magnetic field

This study presents a detailed theoretical analysis of the effects of hydrostatic pressure, temperature, impurity factors, and external electric fields on the optical properties of InxGa1-xAs tuned quantum dot. A uniform magnetic field, directed perpendicular to the quantum dot plane, is applied. The system is excited using a monochromatic electromagnetic field, considering electron intersubband transitions. Energy levels and wave functions are determined using the parabolic band approximation and effective mass approximation. The linear and nonlinear optical absorption coefficients and refractive index changes are computed using the compact-density matrix approach and the iterative method. Numerical results indicate that the peaks of the linear and nonlinear optical absorption coefficients and refractive index changes shift towards lower energies (red shift) and higher energies (blue shift) under varying hydrostatic pressure, temperature, and impurity factor strength. Additionally, the peak values of the absorption coefficients and refractive index changes increase or decrease based on these parameter variations. These results have significant implications for the design and optimization of quantum dot-based optoelectronic devices.

Modulation of nonlinear optical rectification, second, and third harmonic generation coefficients in n-type quadruple δ-doped GaAs quantum wells under external fields

The paper theoretically explores the variations in nonlinear optical rectification (NOR), second (SHG), and third harmonic generation (THG) coefficients of an n-type quadruple δ-doped GaAs quantum well in the presence of electric, magnetic, and THz laser fields. The energies of subbands and associated wave functions are derived through the solution of the Schrödinger equation, utilizing effective mass and parabolic band approximations. The findings indicate that the applied external electric and magnetic fields significantly influence both the magnitudes and the positions of the peaks in NOR, SHG, and THG concerning the incident photon energies. In addition to the influences of electric and magnetic fields, subjecting the system to an intense laser field results in noticeable changes in the THG, SHG, and NOR coefficients. These numerical findings regarding the optical properties of quadruple δ-doped quantum wells in the presence of external fields could offer valuable guidance for experimental studies.

Hydrostatic pressure and temperature dependent optical properties of double inverse parabolic quantum well under the magnetic field

In this study, we investigated the combined effects of structure parameters such as size and geometry, as well as hydrostatic pressure, temperature, and magnetic field on the electronic and optical properties of a double inverse parabolic quantum well within the framework of the effective mass and parabolic band approximations. It is very important to consider the effects of temperature and hydrostatic pressure, especially in practical applications involving quantum wells such as semiconductor devices and optoelectronics. The results obtained are in good agreement with the literature. Understanding how these factors affect the electronic and optical properties of semiconductor heterostructures helps to optimize the performance and stability of devices operating under different environmental conditions.

Hydrostatic pressure and temperature effects on nonlinear optical properties in harmonic-Gaussian asymmetric double quantum wells

The paper examines the linear and non-linear optical characteristics of an electron in harmonic Gaussian asymmetrical double quantum wells, taking into account thermodynamic variables such as temperature and hydrostatic pressure. Numerical calculations by considering the effective mass and parabolic band approximation are performed. The electron contained within an asymmetric double well generated by the sum of a parabolic and Gaussian potential has its eigenvalues and eigenfunctions determined using the diagonalization approach. For nonlinear optical coefficients, the density matrix expansion is used. Wavefunctions and energy levels vary as an effect of the applied fields. In harmonic Gaussian asymmetrical double quantum wells, the total optical absorption coefficient (TOAC), the relative refractive index changes (RRIC), and second harmonic generation (SHG) have all been theoretically investigated. The magnitude and position of the resonant peaks are significantly influenced by the hydrostatic pressure and temperature effects. With controllable coupling and externally applied hydrostatic pressure and temperature, the potential model presented in this study can be used to simulate and manipulate the optical and electronic properties of the asymmetric double-quantum heterostructures, such as double quantum dots and wells.

Simultaneous effects of the position dependent mass and magnetic field on quantum well with the improved Tietz potential

In this study, we explored the synergistic impact of position-dependent mass and magnetic field on the electronic and optical properties of quantum wells, featuring an enhanced Tietz potential confinement incorporating both standard Morse and improved Rosen–Morse potentials, as influenced by variations in the structural parameter. Calculations were conducted within the framework of effective mass and parabolic band approximations. The diagonalization method was employed, selecting a wave function basis of trigonometric orthonormal functions to determine the eigenvalues and eigenfunctions of the confined electron potential. Our findings reveal that alterations in the sizes and shapes of the quantum wells, magnetic field strength, geometric asymmetry, and confinement parameters lead to significant variations in electron energies, transition between electron states, and the absorption spectrum. These outcomes offer valuable insights for investigating the electronic and structural properties of materials and devising novel materials with tailored optical characteristics.

Time-resolved analysis of dual-gate FETs with non-parabolic energy dispersion for THz applications

The investigation of charge carrier transport in state-of-the-art nanoelectronic devices based on III/V semiconductors proves to be challenging, even more so when the highly non-parabolic energy dispersion exhibited by these materials is taken into account. Unlike the common approach of neglecting this behavior by the use of the parabolic band approximation, a novel combination of a tight-binding approach with a quantum Liouville-type equation is introduced here, where any arbitrary energy dispersion can effectively be included. This leads to a discretization based on the atomic structure without the need for finite difference approximations of the Hamiltonian. Because this allows for the stationary as well as the transient simulation of quantum charge carrier transport, it is well suited for the analysis of ultrathin FETs such as dual-gate FETs when it is combined with a mode-space approach. We demonstrate that the parabolic approximation not only vastly underestimates the current densities when compared to the non-parabolic case but also fails to capture transient effects such as gain compression when amplifier operation is considered.

Electronic and optical properties of the exponential and hyperbolic Rosen–Morse types quantum wells under applied magnetic field

In this study, we considered the electronic and optical properties of quantum wells with the exponential and hyperbolic Rosen–Morse potentials under an applied magnetic field. Calculations are made within the framework of effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal function to find eigenvalues and eigenfunctions of the confined electron. Our results show that the magnetic field, asymmetry, and confinement parameters cause a significant increase in electron energies and energy differences between the electron states and the blue shift in the absorption peaks. These results can be used to probe materials’ electronic and structural properties and develop new materials with tailored optical properties.

Position-Dependent Effective Mass and Asymmetry Effects on the Electronic and Optical Properties of Quantum Wells with Improved Rosen–Morse Potential

In this study, we investigated, for the first time, the effects of the spatially varying effective mass, asymmetry parameter, and well width on the electronic and optical properties of a quantum well which has an improved Rosen–Morse potential. Calculations were made within the framework of the effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal functions to find eigenvalues and eigenfunctions of the electron confined within the improved Rosen–Morse potential. Our results show that the position dependence mass, asymmetry, and confinement parameters cause significant changes in the electronic and optical properties of the structure we focus on since these effects create a significant increase in electron energies and a blue shift in the absorption spectrum. The increase in energy levels enables the development of optoelectronic devices that can operate at wider wavelengths and absorb higher-energy photons. Through an appropriate choice of parameters, the Rosen–Morse potential offers, among many advantages, the possibility of simulating heterostructures close to surfaces exposed to air or vacuum, thus giving the possibility of substantially enriching the allowed optical transitions given the breaking of the system´s symmetries. Similarly, the one-dimensional Rosen–Morse potential model proposed here can be extended to one- and zero-dimensional structures such as core/shell quantum well wires and quantum dots. This offers potential advancements in fields such as optical communication, imaging technology, and solar cells.

Alloying and Doping Control in the Layered Metal Phosphide Thermoelectric CaCuP.

We recently identified CaCuP as a potential low cost, low density thermoelectric material, achieving zT = 0.5 at 792 K. Its performance is limited by a large lattice thermal conductivity, κL, and by intrinsically large p-type doping levels. In this paper, we address the thermal and electronic tunability of CaCuP. Isovalent alloying with As is possible over the full solid solution range in the CaCuP1-xAsx series. This leads to a reduction in κL due to mass fluctuations but also to a detrimental increase in p-type doping due to increasing Cu vacancies, which prevents zT improvement. Phase boundary mapping, exploiting small deviations from 1:1:1 stoichiometry, was used to explore doping tunability, finding increasing p-type doping to be much easier than decreasing the doping level. Calculation of the Lorenz number within the single parabolic band approximation leads to an unrealistic low κL for highly doped samples consistent with the multiband behavior in these materials. Overall, CaCuP and slightly Cu-enriched CaCu1.02P yield the best performance, with zT approaching 0.6 at 873 K.

Electric and Magnetic Fields Effects in Vertically Coupled GaAs/AlxGa1−xAs Conical Quantum Dots

Vertically coupled quantum dots have emerged as promising structures for various applications such as single photon sources, entangled quantum pairs, quantum computation, and quantum cryptography. We start with a structure composed of two vertically coupled GaAs conical quantum dots surrounded by AlxGa1−x, and the effects of the applied electric and magnetic fields on the energies are evaluated using the finite element method. In addition, the effects are evaluated by including the presence of a shallow-donor impurity. The electron binding energy behavior is analyzed, and the effects on the photoionization cross-section are studied. Calculations are carried out in the effective mass and parabolic conduction band approximations. Our results show a notable dependence on the electric and magnetic fields applied to the photoionization cross-section. In general, it has been observed that both the electric and magnetic fields are useful parameters for inducing blueshifts of the resonant photoionization cross-section structure, which is accompanied by a drop in its magnitude.

Influence of a Non-Resonant Intense Laser and Structural Defect on the Electronic and Optical Properties of a GaAs Quantum Ring under Inversely Quadratic Potential

We investigated the impact of a non-resonant intense laser, structural defects, and magnetic fields on the electronic and optical properties of a simple GaAs quantum ring under the inverse quadratic Hellmann potential, using the effective mass and parabolic band approximations. We obtained the energies and wavefunctions by solving the 2D Schrodinger’s equation using the finite-element numerical technique to analyze this. We considered circular polarization to calculate the dipole matrix elements, which were influenced by the laser field and structural defects in the system. This enabled us to study the linear absorption coefficients. Our results demonstrated that the presence of a laser field and a structural defect disrupt the axial symmetry of the problem. When only the non-resonant laser was present, a pattern of excited states appeared in pairs, which oscillated with the magnetic field. However, the amplitude of the oscillation decreased as the magnetic field strength increased, and these oscillations disappeared when the structural defect was introduced. It was also noted that the intensity and position of the linear optical absorption peaks exhibited a non-monotonic behavior with the magnetic field in the absence of a structural defect. However, this behavior changed when the structural defect was present, depending on the type of polarization (right or left circular). Finally, a clear improvement in the absorption peaks with an increase in the laser parameter is reported.

Nonlocal optical conductivity of Fermi surface nesting materials

We investigate the nonlocal optical conductivity of Fermi surface nesting materials that support charge density waves (CDWs) or spin density waves (SDWs). The nonlocal optical conductivity contains information on correlations in electron fluids, which could not be accessed by standard optical probes. A half-metal emerges from doping a CDW, and similarly, a spin-valley half-metal emerges from doping an SDW. Based on the parabolic band approximation, we find that the Drude peak is shifted to a higher frequency and splits into two peaks in the nonlocal optical conductivity. We attribute this to the two Fermi velocities in the half-metal or spin-valley half-metal states.

Harmonic-Gaussian Symmetric and Asymmetric Double Quantum Wells: Magnetic Field Effects

In this study, we considered the linear and non-linear optical properties of an electron in both symmetrical and asymmetrical double quantum wells, which consist of the sum of an internal Gaussian barrier and a harmonic potential under an applied magnetic field. Calculations are in the effective mass and parabolic band approximations. We have used the diagonalization method to find eigenvalues and eigenfunctions of the electron confined within the symmetric and asymmetric double well formed by the sum of a parabolic and Gaussian potential. A two-level approach is used in the density matrix expansion to calculate the linear and third-order non-linear optical absorption and refractive index coefficients. The potential model proposed in this study is useful for simulating and manipulating the optical and electronic properties of symmetric and asymmetric double quantum heterostructures, such as double quantum wells and double quantum dots, with controllable coupling and subjected to externally applied magnetic fields.

Effects of external perturbations on light absorption by light/heavy hole excitons in a semi-parabolic quantum well

The effects of electric, magnetic, and intense terahertz laser fields on optoelectronic properties are investigated in a GaAs/AlxGa1-xAs semi-parabolic quantum well. The binding energy, exciton light absorption coefficients, interband transition energies, and dipole elements in the matrix are studied within the structure of the parabolic band and effective-mass approximations. The transition energy difference between the ground-state electron energy level and the ground-state heavy hole (light hole) energy level and matrix elements are carried out as functions of external perturbations with a constant well size. The results exhibit that the exciton binding energies of heavy and light holes reduce as long as the laser dressing parameter is larger. The optical absorption of light hole exciton in the system is stronger than the heavy hole exciton. And the excitonic energies, transition energies, and absorption coefficients are much more sensitive and controlled by changing the external perturbations.

Intense terahertz laser field induced electro-magneto-donor impurity associated photoionization cross-section in Gaussian quantum wires

Using expressions derived within the compact density matrix approach, the peaks of optical absorption and the changes of refractive index of a hydrogenic impurity in a GaAs/GaAlAs Gaussian quantum well wire are calculated taking into account the influence of static electric, magnetic and intense laser fields. The photoionization cross section, with normalized photon energy, is computed for different values of static electric field, magnetic field, and laser dressing parameter. The dipole moment matrix elements and the transition energy between ground and first excited state energy levels are computed as functions of quantum wire width and confinement potential depth, with and without external perturbations. Donor impurity binding energy is investigated in presence of the aforementioned electromagnetic probes, using parabolic band and effective mass approximations. The results show that the absorption coefficients depend on the transition energy difference between initial and final states involved as well as on the corresponding polarization response via dipole matrix elements. Discussed optical properties are field-sensitive and they can be tuned within the desired energy ranges using these external perturbations. • Peaks of optical absorption and changes of refractive index of a hydrogenic impurity in a GaAs/GaAlAs Gaussian quantum well wire are calculated. • They have been computed taking into account the influence of static electric, magnetic and intense laser fields. • Photoionization cross section, with normalized photon energy, is computed. • Donor impurity binding energy is investigated in the presence of aforementioned electromagnetic-probes, using parabolic band and effective mass approximations. • Discussed optical properties are field-sensitive and they can be tuned within the desired energy ranges using these external perturbations.

Finite confinement potentials, core and shell size effects on excitonic and electron-atom properties in cylindrical core/shell/shell quantum dots

The effects of confinement potentials of the first and second materials, core size and first shell thickness on the confinement of electron, electron-donor atom, and exciton in cylindrical core/shell/shell quantum dot (CSSQD) are studied taking into account the finite confinement potential model. The confinement of charge carriers in CSSQD with two finite confinement potentials models of the barrier materials are studied. Within the effective mass and parabolic band approximation, the 3D time-independent Schrödinger equation has been resolved. To obtain the ground state quasiparticles energies, we have used the variational technique. Our results show that the donor atom and exciton binding energy, as well as the electron energy, strongly depend on the core radius, first shell thickness, confinement potentials of the barrier materials, and their structures (A and B). Moreover, the confinement potential effect of the first material on the energies is more pronounced when their thickness is large and the core radius is small. So, the external potential effect is more significant when the first shell thickness and potential are small. Also, The binding energy of an on-center (off-center) donor atom is greater (weaker) than that of the exciton, whatever the structure of the confinement potential. In addition, the transition from a type-A to a type-B confinement system has been observed. The findings might be used to modify the electronic and excitonic properties in nanomaterials science.

Nonlinear optical rectification of tuned quantum dots under the action of a vertical magnetic field

The changes of optical rectification (OR) coefficient in tuned quantum dots under the action of the external magnetic field, hydrostatic pressure, temperature and quantum dot radius are theoretically studied in detail. The tuned quantum dots are subjected to a uniform magnetic field perpendicular to the structural plane. Within the framework of effective mass approximation and parabolic band approximation, the energy level and wave function are derived, and the nonlinear OR coefficient is calculated by compact density matrix theory and iterative method. Numerical results show that the resonance peak of the OR coefficient moves in the direction of high energy or low energy under different constraint parameters, that is, red shift or blue shift. At the same time, the peak value of the OR coefficient will increase or decrease with the change of the parameters.

Effects of Intense Laser Field on Electronic and Optical Properties of Harmonic and Variable Degree Anharmonic Oscillators

In this paper, we calculated the electronic and optical properties of the harmonic oscillator and single and double anharmonic oscillators, including higher-order anharmonic terms such as the quartic and sextic under the non-resonant intense laser field. Calculations are made within the effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal functions to find eigenvalues and eigenfunctions of the electron confined within the harmonic and anharmonic oscillator potentials under the non-resonant intense laser field. A two-level approach in the density matrix expansion is used to calculate the linear and third-order nonlinear optical absorption coefficients. Our results show that the electronic and optical properties of the structures we focus on can be adjusted to obtain a suitable response to specific studies or aims by changing the structural parameters such as width, depth, coupling between the wells, and applied field intensity.

First Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots.

Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials delivering outstanding results in various high fields. In this work, we investigated the surface properties of an electron confined in spherical ultra-thin quantum dots in the presence of an on-center or off-center donor impurity. Thus, we have developed a novel model that leads us to investigate the different nanoflake geometries by changing the spherical nanoflake coordinates (R, , ). Under the infinite confinement potential model, the study of these nanostructures is performed within the effective mass and parabolic band approximations. The resolution of the Schrödinger equation is accomplished by the finite difference method, which allows obtaining the eigenvalues and wave functions for an electron confined in the nanoflakes surface. Through the donor and electron energies, the transport, optoelectronic, and surface properties of the nanostructures were fully discussed according to their practical significance. Our findings demonstrated that these energies are more significant in the small nanoflakes area by altering the radius and the polar and azimuthal angles. The important finding shows that the ground state binding energy depends strongly on the geometry of the nanoflakes, despite having the same surface. Another interesting result is that the presence of the off-center shallow donor impurity permits controlling the binding energy, which leads to adjusting the immense behavior of the curved surface nanostructures.

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

We investigate the energy states of confined electrons in doped quantum structures with Razavy-like confining potentials. The theoretical investigation is performed within the effective mass and parabolic band approximations, including the influence of externally applied electric and magnetic fields. First, we analyze the case of a Razavy quantum well and determine its conduction subband spectrum, focusing on the lowest energy levels and their probability densities. These properties have been numerically determined by self-consistently solving the coupled system of Schrödinger, Poisson, and charge neutrality equations. Doping is introduced via an on-center $$\delta$$ -like layer. In order to evaluate the associated total (linear plus nonlinear) optical absorption coefficient (TOAC), we have calculated the corresponding diagonal and off-diagonal electric dipole matrix elements, the main energy separation, and the occupancy ratio which are the main factors governing the variation in this optical response. A detailed discussion is given about the influence of doping concentration as well as electric and magnetic fields, which can produce shifts in the light absorption signal, toward either lower or higher frequencies. As an extension of the self-consistent method to a two-dimensional problem, the energy states of quantum wire system of circular cross section, with internal doping and Razavy potential, have been calculated. The response of eigenvalues, self-consistent potentials and electron densities is studied with the variation in $$\delta$$ -doping layer width and of the donor density. Finally, the origin of Friedel-like oscillations, that arise in the density profile, generated by the occupation of internal and surface electronic states has been explained.