Abstract

This study presents a detailed theoretical analysis of the effects of hydrostatic pressure, temperature, impurity factors, and external electric fields on the optical properties of InxGa1-xAs tuned quantum dot. A uniform magnetic field, directed perpendicular to the quantum dot plane, is applied. The system is excited using a monochromatic electromagnetic field, considering electron intersubband transitions. Energy levels and wave functions are determined using the parabolic band approximation and effective mass approximation. The linear and nonlinear optical absorption coefficients and refractive index changes are computed using the compact-density matrix approach and the iterative method. Numerical results indicate that the peaks of the linear and nonlinear optical absorption coefficients and refractive index changes shift towards lower energies (red shift) and higher energies (blue shift) under varying hydrostatic pressure, temperature, and impurity factor strength. Additionally, the peak values of the absorption coefficients and refractive index changes increase or decrease based on these parameter variations. These results have significant implications for the design and optimization of quantum dot-based optoelectronic devices.

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