Polishing Pad Research Articles

Surface characterization of the diamond polishing pads and their performance evaluation in nanofinishing of electroless nickel plating

Surface characterization of the diamond polishing pads and their performance evaluation in nanofinishing of electroless nickel plating

The Quantitative Evaluation of the Cell Structure Uniformity of Microcellular TPU with Low Porosity via a Digital Image Processing Method.

The cell structure uniformity of microcellular polymers significantly impacts material performance, especially for low-porosity microcellular TPU used in chip polishing. The distribution of the cell structure of polishing pads directly affects the removal rate and process repeatability. Despite its importance, no quantitative method for evaluating cell structure uniformity has been reported in the literature. In this study, a digital image processing method that involves morphological operations of scanning electron microscopy (SEM) images, binarization, and cell localization, and the statistical evaluation of cell structure parameters was established to evaluate cell structure uniformity. A quantitative metric, the cell structure uniformity index (CUI), was calculated based on cell structure indices, incorporating the cell size index (Ud), the cell number index (Un), and the cell local spacing index (Ur). By establishing an ideal model and analyzing representative SEM images, the effectiveness and efficiency of the method for evaluating cell structure uniformity of microcellular TPU were successfully validated. The results demonstrated that low-porosity TPU foams exhibited relatively low cell structure uniformity compared to the ideal model. The heterogeneous nucleation process in TPU caused non-uniform cell structures due to the temporal and spatial non-homogeneities during the early cell nucleation process. As the cells grew, they merged and reduced the distance between them, resulting in improved cell structure uniformity.

Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing

Abstract The groove depth of a polishing pad diminishes due to continuous wear from the diamond conditioner. Over the course of approximately 20 hours of use, this reduction in groove depth enhances slurry flow across both the pad grooves and surface. A fluid simulation analysis indicates that the new slurry mass fraction at 0.51 seconds increases from 72.34% for an 850 µm groove depth to 100.00% for a 250 µm depth. Consequently, polishing performance metrics including removal rate, within-wafer nonuniformity (WIWNU), and added defects exhibit variations commensurate with groove depth alterations. To explore the influence of process parameters on these polishing performance metrics, oxide film polishing experiments were conducted using pads with initial groove depths of 250, 500, 750, and 850 µm. The effects of process parameters, including pad cut rate, retainer ring pressure, and slurry flow rate on polishing were separately examined across different groove depth pads. Generally, shallow groove pads display improved removal rates but worse WIWNU. Additionally, the maximum surface temperature of the pads was recorded, serving as an indirect indicator of individual parameter effects. The findings have implications for advanced process control, guiding the optimization of polishing protocol in consideration of pad lifetime.

Enhanced material removal modeling in cylindrical bonnet tool polishing: Incorporating time-dependent pad wear effects

To enhance the accuracy and stability of the material removal model for cylindrical bonnet tool polishing (CBTP), this study introduces a model incorporating the time-varying wear effect of the polishing pad. Initially, the functional principles of the CBTP method are systematically outlined. An advanced material removal model is then proposed, which accounts for the impact of pad wear on pressure and velocity distributions within the contact area. Experimental methods were employed to explore how pad wear affects the pad surface morphology, polishing quality, and material removal rates. Findings reveal that pad wear considerably influences both the depth of material removal and the quality of the polished surface. Validation experiments demonstrate that the enhanced model is accurate and stable. Including the time-varying factor, the discrepancy between the predicted and experimental values of the polishing spot size was 9.29 %, while the accuracy of the predicted material removal depth reached 90.74 %. Additionally, the removal profiles generated by the improved model closely matched those observed experimentally.

Preparation and performance study of silicon modified polyurethane-based magnetorheological elastomeric polishing pad

Abstract By employing Magnetorheological Elastomers (MREs) as polishing pads for chemical mechanical polishing (CMP), the magnetorheological properties are utilized to effectively control the flexible removal of materials in CMP. This study presents a method for preparing a Silicon modified Polyurethane (SPU)-based MRE polishing pad, aimed at demonstrating improved magnetorheological properties while preserving mechanical properties. The SPU-based MRE polishing pad was synthesized through the copolymerization of hydroxypropyl silicone oil and polyurethane prepolymers, with subsequent evaluation of its mechanical properties and polishing performance. Fourier Transform Infrared (FTIR) analysis confirmed the successful incorporation of the soft polydimethylsiloxane main chain from organosilicon into the polyurethane main chain, forming a soft segment that intertwines with the polyurethane main chain to create a soft-hard segment crosslinked structure. Comparison to Polyurethane (PU)-based MRE, SPU exhibits significantly reduced hardness but improved wear resistance, as well as enhanced resistance to acid and alkali corrosion. Due to the presence of a soft matrix, SPU shows better magnetorheological effects than PU-based MRE. Under a magnetic field intensity of 845 mT, the magnetorheological effect of PU-based MRE is only 18%, while Si-15.96 and Si-16.79 SPU-based MREs can reach 84% and 110%, respectively. Although the Material Removal Rate (MRR) of single-crystal SiC decreases after polishing with SPU compared to PU-based MRE, a higher surface quality is achieved, and the glazing degree of the polishing pad is significantly reduced. In the magnetic field-assisted polishing of single crystal SiC, the MRR increased by 38.4% when polished with an SPU-based MRE polishing pad, whereas the MRR was only 8.7% when polished with a PU-based MRE polishing pad. This study provides further evidence for the development and application of MRE in CMP.

Roughness control in the processing of 2-inch polycrystalline diamond films on 4H-SiC wafers

Diamond is an essential material for the manufacture of semiconductors devices, infrared optical windows, heat dissipation and other fields. The applications have put forward a practical demand that the diamond substrates have an ultra-smooth surface and are free of structural damage. However, precision polishing of diamond is challenging due to the extreme hardness and chemical inertness. The focus of this study is to prepare nanoscale smooth polycrystalline diamond films with roughness Ra down to 0.1 nm using chemical and mechanical synergies. After processing, the surface roughness and quality of CVD diamond film were characterized, and a material removal mechanism was proposed. The graphitization process is accelerated when diamond contacts the transition metal Fe in the mechanical polishing process. In chemical mechanical polishing process, the polished surface of diamond C is transformed into deformed diamond C* under friction. A relatively soft polishing pad is used to increase the contact area with the diamond, which is transformed into a softer, easy-to-remove structure under the action of potassium permanganate oxidant, and then the reaction layer is removed again by mechanical friction.

Investigating Slurry Flow Patterns in Chemical Mechanical Polishing (CMP) Using Computational Fluid Dynamic (CFD) Simulations

Chemical Mechanical Polishing has emerged as a leading area approach for planarizing wafer surfaces during semiconductor manufacturing due to its ability to provide defect-free and uniform surfaces. Achieving nanoscale planarity on a wafer and die is one of the most significant steps in the process [1]. As part of the CMP process, it is essential to understand the interactions between consumables to facilitate the production of smooth and mirror-like surfaces [2], [3]. Simulation and numerical modeling have become critical means for elucidating intricate flow patterns to probe the underlying fundamentals of CMP processes. The computational fluid dynamics (CFD) simulations provide a detailed understanding of fluid flow behavior for various conditions [4], [5]. This study uses a three-dimensional CFD simulation to provide an understanding of the slurry flow pattern and its effects on CMP performance. Several CFD simulations were performed to study the effect of different parameters on slurry flow patterns. The simulations provided information on the interaction between the slurry, the wafer surface, and the polishing pad, in addition to the abrasive distribution, slurry velocity, and pressure variations within the CMP tool. It was observed that changing the pad and wafer rotation speeds, the wafer-pad gap size and the center-to-center distance affect the slurry flow conditions. For the same rotational speeds, as the center-to-center distance decreases, the flow velocity increases toward the wafer edge. Moreover, with the same rotation speed, the pad rotation dominates the wafer rotation speed.[1] B. Suryadevara, Advances in Chemical Mechanical Planarization (CMP). Woodhead Publishing, 2021.[2] J. Seo, Journal of Materials Research, 36, 235–257, 2021.[3] A. R. Mazaheri and G. Ahmadi, J Electrochem Soc, 150, G233, 2003.[4] J. Tu, K. Inthavong, and G. Ahmadi, Springer Science & Business Media, 2012.[5] G. Ahmadi, “Chapter 2 -, R. Kohli and K. L. Mittal, Eds., Oxford: William Andrew Publishing, 2012, pp. 81–105.

(Invited) Novel Brush Design for Post CMP Cleans

Chemical Mechanical Polishing (CMP) process is one of the key processes in semiconductor wafer processing. A sub 10nm wafer fabrication process may require more than 40 dielectric and metal CMP steps. As CMP process requirements get more stringent, CMP slurries are formulated with smaller and smaller metal oxide abrasive particles. The abrasive particles may also be surface modified or doped with other metal oxides. Post CMP cleaning chemistry formulations are designed to remove polish byproducts, pad residues and abrasive particles from wafer surface. Chemical composition and PH are tuned for modulating wafer surface-particle interactions so brushes can mechanically “sweep” them off the surface. PVA brushes, used of post CMP cleans, are a highly porous network of crosslinked polyvinyl acetate with pore size in the range of 30 – 100 um and 80% - 90% porosity, depending on the type of brush being used. While PVA brushes have largely met the process capability requirements, they have limitations for advanced cleans such as nano-particle removal. As CMP process continues to expand to new dielectric and metal films for different process steps in wafer fabrication, there is a need for customized brush material and surface design for optimal cleaning efficiency.We discuss a new engineered post CMP brush design that shows high efficiency in nano-particle cleans and allows high level of material tunability. New brush design is an engineered composite with an open cell microporous core, overlaid with engineered fibers in form of loops. Brush design is compatible with existing post CMP cleans. Figure 1(a) shows the new design, where in DIW enters the brush through the center of microporous core and flows outwards to the surface. As water exits the surface, it flows over and across the loops and contacts the wafer surface. Flow resistance through core and loops can be independently tuned, which allows better fluid distribution and more effective cleans. Figure 1(b) show a close-up schematic of interaction between loop and particle. Flexing of the loops on brush surface provides improved contact as well as cleaning ability Brush design can be optimized for chemical and mechanical properties with choice of fiber material, fiber diameter and loop height. Figure 2 shows the Zeta potential of PVA and different loop materials. The fiber material maybe selected such that zeta potential of the loops can enhance mechanical action in removing particle. Mechanical action of the Loops can be modeled as a cantilever and force on the particle is exerted by flexing of the loops.Deflection of loops can be approximated with flexure stiffness of rods with point load at free end. For initial purposed loop is approximated as single element. The equation can be rewritten to calculate cleaning force P at the free end for given loop deflection (Y), P = 3EIY/L3 (1)Where E is elastic modulus, I = moment, L = length of fiber and for rod shapes; I = Pi*(r4/4)The adhesion of particles on the surface is due to the effect of van der Waals and electrostatic forces. The total adhesion force on the surface can be written as: F=F vdw + F edl (2) where Ft is total adhesion force, Fvdw is the van der Waals force, and Fedl is the electrostatic force.Fvdw = AR/6r2 (3)Where A is the Hamaker constant, R is particle radius, r is the separation distanceFor effective removal of particles, P >/= F (4)Flex force and adhesion force were modeled based on equation (1) and (3) and are shown in Figure 3. New brush design was used for post CMP cleaning of silicon dioxide wafers polished with ceria slurry. Two different brush designs were tested for cleaning efficiency. Modeling data and comparison with experimental results is presented. Figure 1

The influence of sub-surface damage microstructure on ultra-thin die flexural strength

In the semiconductor industry, where miniaturization is a key driver, mechanical properties of ultra-thin dies are increasingly important research topics. Sub-surface damage (SSD) is a common issue in wafer thinning processes, but there is a lack of research on the relationship between SSD microstructure and ultra-thin die strength. In this study, the influence of SSD microstructure on flexural strength was investigated through three-point bending tests of ultra-thin dies prepared by distinct wafer-thinning methods, coupled with SSD microstructure characterization. Flexural strength was highest for dies dry polished with N pad, intermediate for dies dry polished with M pad, and lowest for dies with fine grinding. We researched SSD microstructure by high-resolution transmitted electron microscope (HRTEM), revealing that it comprises amorphous regions, micro-cracks, and high-density distortion areas. The SSD of the fine grinding samples was thick and intermittent, with observable micro-cracks. Comparatively, the SSD structure from M pad polishing was uniform but thicker, whereas SSD from N pad polishing was thinner but exhibited greater variability. SSD thickness not only influences the average value but also dictates the distribution of flexural strength. This research enhances the understanding of SSD microstructure's impact on ultra-thin die flexural strength, providing valuable insights for optimizing wafer thinning processes to enhance die reliability.

Effect of Secondary Foaming on the Structural Properties of Polyurethane Polishing Pad.

Polyurethane polishing pads are important in chemical mechanical polishing (CMP). Thus, understanding how to decrease the density but increase the porosity is a crucial aspect of improving the efficiency of a polyurethane polishing pad. According to the principle of gas generation by thermal decomposition of sodium bicarbonate and ammonium bicarbonate, polyurethane polishing pad was prepared by a secondary foaming method. The influence of adding such an inorganic foaming agent as an auxiliary foaming agent on the structure, physical properties, and mechanical properties of polyurethane polishing pads was discussed. The results showed that compared with the polyurethane polishing pad without an inorganic foaming agent, the open-pore structure increased, the density decreased, and the porosity and water absorption increased significantly. The highest porosity and material removal rate (MRR) with sodium bicarbonate added was 3.3% higher than those without sodium bicarbonate and 33.8% higher than those without sodium bicarbonate. In addition, the highest porosity and MRR with ammonium bicarbonate were 7.2% higher and 47.8% higher than those without ammonium bicarbonate. Therefore, it was finally concluded that the optimum amount of sodium bicarbonate to be added was 3 wt%, and the optimum amount of ammonium bicarbonate to be added was 1 wt%.

Novel full-scale model verified by atomic surface and developed composite microfiber and slurry polishing system

Polishing mechanisms between fibers of a polishing pad and slurry are elusive, rising a challenge to develop high-performance composite polishing system. To solve this challenge, a novel full-scale model is proposed from mm to nm, consisting of macro, meso, micro and nanoscale. The model is verified by atomic surface and developed composite microfiber and slurry polishing system. Prior to chemical mechanical polishing, fused silica was polished by ceria slurry. A novel polishing pad was prepared using microfibers with a diameter of 2.5 μm, and a novel green slurry contained silica abrasives, hydrogen peroxide, sodium carbonate, sorbitol and xanthan gum. After CMP, an atomic surface with Ra of 0.108 nm was achieved, and the thickness of damaged layer is 1.95 nm. In terms of the macroscale model suggested, the maximum stress on the microfiber pad decreased 417.7 %, and the direct contact area increased 41.23 % compared with those of a commercial nonwoven pad. The peak stress exceeded 1 MPa on the commercial pad, while it reduced to about one fourth on the developed microfiber pad, according to the mesoscale fiber-slurry model proposed. Reactive force field molecular dynamics simulations, i.e. nanoscale model, reveal that a slurry layer existing at interface effectively impedes direct contact between abrasives and fused silica. With increasing the polishing load, material removal mode transformed from an atom to atomic chains. The constructed full-scale model and developed composite polishing system provide new insights to analyze, design and manufacture high-performance polishing pads, slurry and system.

Deep ensemble learning for material removal rate prediction in chemical mechanical planarization with pad surface topography

Chemical mechanical planarization (CMP) stands as a critical process in semiconductor manufacturing, necessitating precise prediction of material removal rate (MRR) to achieve optimal global planarization of material surface step heights. A notable hurdle in MRR prediction lies in the nonlinear pad-wafer interaction stemming from variations in the polishing pad surface. Despite numerous extant studies examining the asperity of the pad surface and the wafer-pad contact, aspects such as slurry lubrication and micro-topographical structure of the pad surface remain unaddressed. This study firstly proposes a deep ensemble learning-based approach for MRR prediction, leveraging the intricate interactions between the overall features of the pad surface and the polishing pressure. We experimentally generated diverse pad surfaces by controlling the process variables governing pad surface topography. The Multi-TabNet model, constructed by independently training multiple TabNet instances with distinct initialization and hyperparameters, furnishes a framework for MRR prediction across a broad spectrum of pad surface features, encompassing pores and cores. The results demonstrate a root mean square error of 80 Å/min, with the error margin reduced by up to 70 % compared to predictions utilizing a single parameter of the pad surface. Furthermore, it exhibits an error improvement exceeding 17 % relative to the existing method solely considering asperity. This study not only imparts insights for addressing MRR variations contingent on pad condition but also facilitates dependable material removal even on variable pad surfaces due to conditioner wear.

Modelling of polyurethane polishing pad surface topography and fixed-point polished surface profile

Polishing process, is an important process of ensuring surface quality and precision. However, it is difficult to achieve quantitative material removal and polish to target surface profile accurately, due to the special structure characteristic of polishing pad and the complex contact mechanism between polishing pad-abrasive particle-workpiece surface. Therefore, this study proposes a statistic model for polyurethane polishing pad surface, which take into consideration of the circular hole size (Gaussian distribution), density and location distribution (random distribution) on polishing pad surface. On the basis of the polishing pad surface model, this study further establishes a predicting model for polishing surface profile through analyzing of the effective number of abrasive particles between polishing pad and workpiece, the real contact force between a single abrasive particle and workpiece surface, the single abrasive particle footprint, the overlapping and superimposing of abrasive particle footprint. A series of polishing pad comparative analysis and SiC polishing experiments with different parameters are performed. Both of the two models are validated through qualitative and quantitative comparisons of simulation and experiment results. The proposed models not only lay the foundation for an in-depth understanding of the material removal mechanism in polishing process with polyurethane polishing pads, but also meaningful to other polishing process with polyurethane polishing pads and the optimization of polishing process.

Surface microtopography evolution of monocrystalline silicon in chemical mechanical polishing

Chemical mechanical polishing (CMP) is a widely utilized technique for achieving ultra-smooth surfaces, yet a comprehensive understanding of the surface microtopography evolution remains elusive due to the intricate chemical and mechanical interactions inherent in chemical mechanical polishing. Accordingly, this study explores the evolution law of different spatial frequency features of surface microtopography of monocrystalline silicon by analyzing the changes in the power spectral density (PSD) curve. More importantly, the evolution mechanism of the chemical mechanical polishing surface micromorphology is revealed through the analysis of the power spectral density under different mechanical and chemical conditions. The results emphasize the noticeable impact of both mechanical and chemical actions on the evolution of different spatial frequency features in surface microtopography. The mechanical action of a large particle, less likely to contact the valley region with a small curvature radius, enhances the smoothing speed of high-spatial frequency roughness. Moreover, the mechanical action of polishing pad demonstrates a greater efficiency in smoothing mid-spatial frequency roughness when utilizing a hard pad. This is attributed to the limited impact of pad hardness on the removal depth of single particles within the reaction layer, rendering it less significant for high-spatial frequency roughness. Upon elevating the chemical reaction rate, a notable acceleration in the reduction of roughness in both mid- and high-spatial frequency regions is observed. Furthermore, insights derived from molecular dynamics (MD) simulations of monocrystalline silicon and quartz glass show that the manner of surface atom removal, whether through single atom removal or cluster removal, exerts a significant effect on the final high-spatial frequency components of the power spectral density. This study contributes valuable insights into the intricate formation mechanism of a smooth surface in chemical mechanical polishing.

Center-injected Polishing for Efficient Slurry Utilization

Polishing is one of the most crucial finishing processes and usually consumes a sufficient slurry to achieve an ultra-fine surface. However, excess slurry consumption is environmentally costly, as it generates a large amount of wastewater. Given the growing environmental concerns, it is essential to improve the process efficiency and minimize the environmental burdens. Considering this, a novel polishing system, herein referred to as center-injected polishing, is proposed by injecting slurry into the center of the polishing pad. Here, it is aimed to utilize the centrifugal force of the rotating pad, with the aim of efficient slurry utilization. The slurry is directly introduced between the pad and the workpiece, then dispersed across the pad by centrifugal force. A simple experiment was conducted with computational analysis using the specially designed polishing tool to prove the concept; slurry was distributed more uniformly in center-injected polishing when compared to the conventional process. The polishing system was then constructed to evaluate polishing performances. Based on sets of experiments in the polishing of silicon carbide (SiC), slurry efficiencies and productivity were analyzed with respect to different rotational speeds and slurry supply rates. The material removal rate (MRR) was more than twice the rate achieved by conventional polishing at the same processing conditions; whereas the slurry consumption was approximately 60% less at the same MRR. The extended Preston equation was used to predict the MRR of the new process. It is expected that efficient slurry utilization will reduce the environmental footprint of abrasive processes.

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Real contact area (RCA) between polishing pad and workpiece surface is one of the most important parameters indicating the mechanical action strength of chemical mechanical polishing (CMP), which has a dominated effect on the material removal. However, the effect of pad viscoelastic characteristics on RCA is not clear. In this study, a contact status measurement device that can apply cyclic load and record contact images is developed to study the viscoelastic behavior of the pad and its influence on RCA. The results show that when the pad undergoes cyclic compression load during CMP, the pad asperity layer gradually accumulates viscoelastic deformation and the RCA increases obviously, which can be mostly recovered after a long time. In particular, the accumulation and recovery of viscoelastic deformation lead to a significant change of the relationship between RCA and pressure, from linear to nonlinear and then to linear. Furthermore, an RCA model is established based on the viscoelastic constitutive model of pad and the mathematical relationship between RCA and pad deformation to explain the influence of pad viscoelastic behavior on RCA. This study is expected to provide new insights into RCA, and to give support for predictive control of the material removal during CMP.

Theoretical and experimental investigation on material removal mechanism in dual-rotation polishing of fused silica glass

Fused silica glass is utilized extensively in various optical components owing to its excellent optical properties, but its high hardness and brittleness make it difficult to process with high surface accuracy and low subsurface damage. To solve this problem, a series of experiments is carried out to explore the mechanism of material removal during dual-rotation polishing of fused quartz glass. A predictive model is proposed to predict the material removal rate and the microtopography of polished surface. This model considers fundamental physics of the dual-rotation polishing process, for instance, the surface micro-topography and the pressure distribution of the polishing pad, the brittle–ductile material removal mechanism, the planetary motion during the polishing, and the influence of chemical reactions. The reliability and accuracy of the model are quantitatively evaluated through practical experiments. It is turned out that the simulated results reasonably agree with the experimental data. In addition, simulation experiments show that a Gaussian removal function with a strong central peak can be obtained when the eccentricity is 0.9 and the rotating speed ratio is between −10 and −1. This indicates that the theoretical model can be successfully applied to the prediction and optimization of polishing processes.

The processing properties of photocatalysis assisted magnetorheological polishing based on TiO2–CI composite particles

With the development of optoelectronic wafers tend to be high brittleness, high hardness and high chemical stability, a single magnetorheological polishing is difficult to meet the application requirements of optoelectronic wafers. The quality and efficiency of magnetorheological polishing (MRP) of photoelectric wafer can be further improved by electric field assisted polishing or photocatalysis assisted polishing. In this paper, TiO2–CI functional composite particles were synthesized by sol-gel method, and a variety of polishing fluid with magnetic, electric and optical multi field effects were prepared. Silicon wafer and fused silica glass were polished by fixed-point centering polishing method, and the mechanism of photocatalytic assisted magnetorheological polishing (PMRP) was studied by comparing the polishing performance of the polishing fluid under different applied fields. The results show that when the polishing fluids prepared by oil-based liquid, the material removal rate is high under the action of a single magnetic field, but the polishing quality is poor. After polishing for 60 min, the height difference in surface profile ΔRz of fused silica glass is 0.67 μm. When the 2.5 kV/mm electric field is applied, the abrasive distribution can be controlled by electromagnetic composite field, and the stiffness distribution of polishing pad is more uniform, but it will reduce the material removal rate (MRR). Compared with the single magnetic field, the height difference in surface profile ΔRz is reduced by 73.1 % to 0.18 μm under the magnetoelectric compound field, which can obtain a more flattened surface quality. When light field and magnetic field are applied, water-based polishing fluid is used for polishing. Because UV light can induce photocatalytic reaction, the strong oxidation group ·OH generated in the photocatalytic reaction can oxidize the materials of workpiece surface into the lower hardness materials. Therefore, the material removal rate is increased by 249 % to 13.4 mg/h compared with that without light field, and the surface roughness was reduced by 69.32 % to 1.05 nm.

Novel green chemical mechanical polishing by controlling pH values and redox reaction for achieving atomic surface of a nickel alloy

Traditional chemical mechanical polishing (CMP) normally employs noxious slurries, leading to pollution to the environment. It is a challenge to achieve atomic surfaces of nickel (Ni) alloy using green CMP. To overcome this challenge, a novel green CMP was developed, including composite abrasives of ceria and silica, mandelic acid, hydrogen peroxide and deionized water. Using the developed green CMP, atomic surface with surface roughness Sa of 0.179 nm was achieved, under a scanning area of 50 × 50 μm2. Electrochemical tests indicate that the developed slurry has effective corrosion ability on Ni alloy. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy reveal that the Ni alloy was oxidized by hydrogen peroxide, forming oxides of Ni, chromium (Cr) and molybdenum (Mo). Cr and Mo oxides demonstrated better stability in mandelic acid, while Ni oxides reacted with hydrogen ions and produced Ni2+ and Ni3+ ions. The ions chelated with mandelic acid. Finally, the generated oxides and reaction products were removed by abrasives and a polishing pad under chemical and mechanical balanced functions. The developed green CMP paves a new avenue to obtain atomic surface of a Ni alloy for the possible applications of high-performance components in aerospace industry.

Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization

Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough surface by combining several functions of tribology (friction, lubrication), chemistry, and electrochemistry (corrosion, wear, tribo-corrosion). The surface layer of interest is structurally weakened by the chemical and/or electrochemical reactions of selected additives in a polishing slurry, and the modified surface is flattened by the abrasion of a polishing pad with or without abrasive particles. The chemically active CMP slurry also serves as a lubricant for polishing and enables planarization at a microscopic level while avoiding the formation of defects at the processed surface. Applications of CMP are wide-ranging in various material-processing technologies and, specifically, it is a critical manufacturing step of integrated circuits. The CMP of metals is a significant part of this processing scheme and is associated with highly complex tribo-electrochemical mechanisms that are now additionally challenging due to various new requirements of the advanced technology nodes. The present review examines the current statuses of experimental strategies for collecting important mechanistic details of metal CMP that are necessary to design and assess CMP consumables. Both traditional and underexplored experimental techniques are discussed with illustrative results, including many previously unpublished findings for certain CMP systems of current interest.