The heat dissipation requirements of the new generation of semiconductors are placing higher demands on the overall performance of aluminum nitride (AlN) ceramics. This has led to an increasing emphasis on AlN ceramics that combine thermal conductivity and strength. AlN ceramics are often strengthened by hot-press sintering, but their thermal conductivity is typically modest. In this study, pre-sintering and annealing processes are introduced to optimize the thermal conductivity of hot-pressed AlN ceramics to avoid the detrimental effects of oxygen impurities in the AlN lattice. The effect of the oxide layer on the surface of commercial AlN particles is investigated, including density, phase composition, microstructure, and fracture behavior. The effect of annealing on the improvement of thermal conductivity and flexural strength is also verified. Electron paramagnetic resonance (EPR) analysis is performed to examine the concentration of intercrystalline defects under various conditions. Finally, AlN ceramics with a thermal conductivity of 204 W m−1 K−1 and a flexural strength of 376 MPa are obtained.
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