Oxide Semiconductor Materials Research Articles

Tailoring the Ni-O Microenvironment in Amorphous-Dominated Highly Active and Stable Zn/NiO for Hydrogen Sulfide Detection.

Amorphous metal oxide semiconductor (MOS) materials are endowed with great promise to modulate electronic structures for gas-sensing performance improvement. However, the elevated-temperature requirement of gas sensors severely impedes the application of amorphous materials due to their low thermal stability. Here, a cationic-assisted strategy to tailor the Ni-O microenvironment in an amorphous-dominated Zn/NiO heterogeneous structure with high thermal stability was developed. It was found that 6 mol % Zn incorporation into amorphous NiO can effectively preserve the amorphous-dominated NiO phase even at high temperature. After calcination, the amorphous oxide can only be converted to crystals partly thus leading to the formation of amorphous/crystalline compounds, and the content of the amorphous phase can be adjusted by changing the calcination temperature. This amorphous/crystalline configuration can induce more electron transfer from Ni to Zn species, leading to the formation of active Niδ+ (δ>2) centers. Ex situ XPS and in situ Raman spectroscopy studies proved that the generated Niδ+ species pronouncedly promote the electron transfer during the H2S adsorption process. The amorphous/crystalline-6 mol % Zn/NiO sensor exhibits exceptional hydrogen sulfide response (2 ppm, 3.23), outstanding repeatability (as long as 5 weeks), and low limit of detection (as low as 50 ppb), surpassing most reported nickel-based gas sensors such as the crystal nickel oxide prepared in this work. The response and detection limit of the latter is only (2 ppm, 1.89) and (0.05 ppm) respectively. Our work thus opens up more opportunities for fundamental understanding and modulating of highly active amorphous sensing materials.

Inkjet printed IGZO memristors with volatile and non-volatile switching

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and − 5 V, respectively, a retention up to 105 s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth < − 0.65 V) and a characteristic time (τ) of 0.75 ± 0.12 ms when a single pulse of − 0.65 V with width of 0.1 ms is applied. The characteristic time alters depending on the number of pulses. These volatile characteristics allowed them to be tested on different 4-bit pulse sequences, as an initial proof of concept for temporal signal processing applications.

Pengaruh Penambahan Monoetanolamin (MEA) pada Sifat Listrik dari Material Copper Tin Oxide

Semiconductors are materials with interesting electrical properties. Copper tin oxide (CuSnO3) is an oxide semiconductor material with a band gap value of 2.0-2.5 eV. The method used is sol-gel method with the addition of monoethanolamine (MEA). Copper (II) nitrate trihydrate and tin (II) chloride dihydrate as precursors and methanol as solvent. The purpose of this research is to see the effect of MEA addition on the electrical properties of CuSnO3. Characterization results using UV-DRS showed the band gap of CuSnO3 obtained with the addition of 1.5 mL of MEA was 1.71 eV and without the addition of MEA was 2.36 eV. The addition of MEA can reduce the band gap value. Electrical conductivity will be better with the smaller band gap value.

Flower-like Ag-decked non-stoichiometric Bi2O3-x/rGO hybrid nanocomposite SERS substrates for an effective detection of Rhodamine 6G dye molecules.

In early years, SERS-active substrates were generally noble metals. However, their practical applications were limited due to their poor biocompatibility, low uniformity and high cost. Recently, the utilization of semiconductor SERS-active substrates has greatly expanded the applications of SERS in many fields. However, metal-free SERS-active substrates have a low enhancement factor (EF), which can be overcome by adjusting their oxygen deficiency or through the effective preparation of non-stoichiometric semiconducting oxide materials. This is the key strategy and may work as an efficient and simple way to achieve high sensitivity and obtain an enhancement factor (G-factor) comparable to that of noble metals. Here, we report the preparation of flower-like rGO-Bi2O3/Bi2O2.75 and rGO-Ag-Bi2O3/Bi2O2.75 hybrid thin film nanocomposites using a liquid/liquid interface method (LLI) for the first time. In addition to the synergic effect of different enhancement mechanisms, the 3-D flower-like morphology of the substrate shows more favourable properties to improve the G-factor due to the existence of more hotspots. The rGO-Ag-Bi2O3/Bi2O2.75 hybrid thin-film nanocomposites show an EF of 1.8 × 109 with a detection ability of up to 1 nM towards Rhodamine 6G (R6G), which is highly toxic to humans and the aquatic environment.

Multioxide combinatorial libraries: fusing synthetic approaches and additive technologies for highly orthogonal electronic noses

This study evaluates the performance advancement of electronic noses, on-chip engineered multisensor systems, exploiting a combinatorial approach. We analyze a spectrum of metal oxide semiconductor materials produced by individual methods...

Multioxide combinatorial libraries: fusing synthetic approaches and additive technologies for highly orthogonal electronic noses.

This study evaluates the performance advancement of electronic noses, on-chip engineered multisensor systems, exploiting a combinatorial approach. We analyze a spectrum of metal oxide semiconductor materials produced by individual methods of liquid-phase synthesis and a combination of chemical deposition and sol-gel methods with hydrothermal treatment. These methods are demonstrated to enable obtaining a fairly wide range of nanomaterials that differ significantly in chemical composition, crystal structure, and morphological features. While synthesis routes foster diversity in material properties, microplotter printing ensures targeted precision in making on-chip arrays for evaluation of a combinatorial selectivity concept in the task of organic vapor, like alcohol homologs, acetone, and benzene, classification. The synthesized nanomaterials demonstrate a high chemiresistive response, with a limit of detection beyond ppm level. A specific combination of materials is demonstrated to be relevant when the number of sensors is low; however, such importance diminishes with an increase in the number of sensors. We show that on-chip material combinations could favor selectivity to a specific analyte, disregarding the others. Hence, modern synthesis methods and printing protocols supported by combinatorial analysis might pave the way for fabricating on-chip orthogonal multisensor systems.

Biotemplate-Assisted Growth of ZnO in Gas Sensors for ppb-Level NO2 Detection.

With the growing concern over the adverse effects of environmental pollution on human health, the combination of environmentally friendly and nontoxic biomaterials with metal oxide semiconductor materials for electronic devices has emerged as a prominent trend in current research. In this study, we utilized 150 mg apple biotemplates to assist in the hydrothermal synthesis of ZnO nanospheres. It successfully achieved high sensitivity for detecting 35 and 350 ppb NO2 at room temperature, with responses of 13.74 and 132.44%, respectively. Simultaneously, the 5-cycle repeatability and multiple-gas selectivity exhibited significant improvements. The ZnO nanospheres demonstrated enhanced sensing performance compared to pure ZnO nanorods, which is attributed to the following mechanisms: reason I, the modified surface morphology increasing the surface-to-volume ratio; reason II, an increase in oxygen vacancies, leading to reduced crystallinity and a higher electron concentration; reason III, incorporation of carbon elements on the nanostructure surface to increase active sites. The novel gas sensor assisted by the apple pectin biotemplate offers a promising solution for NO2 gas detection, featuring low operating temperatures, low concentrations, and high response sensitivity.

Environmentally friendly synthesis of In2O3 nano octahedrons by cellulose nanofiber template-assisted route and their potential application for O3 gas sensing

Cellulose has recently been utilized as a green and eco-friendly substrate template for synthesizing semiconductor oxide materials. This paper introduces a novel and sustainable method for obtaining In2O3 nano octahedrons, using cellulose nanofibers (CNF) as sacrificial templates. To demonstrate the importance and advantages of the CNF template, a parallel synthesis was conducted under the same conditions, but with no CNF. The as-prepared In2O3 compounds were thoroughly characterized by XRD, SEM, and XPS techniques. The CNF template-assisted route resulted in an approximately 3000 % particle size reduction and a narrow distribution compared to the sample prepared with no CNF as a template. Notably, the sensing performance towards ozone (O3) gas was also substantially enhanced in the CNF template-assisted sample and a significantly higher response (Rg/Ra = 42 @ 70 ppb O3) was observed compared to the In2O3 sample with no CNF (Rg/Ra = 3.5 @ 70 ppb O3). Furthermore, sensors based on CNF-assisted In2O3 octahedra synthesis showed greater selectivity towards O3 than towards NO2, another oxidizing gas, and a relatively lower operation temperature (200 °C). The enhancement in gas sensing properties for O3 detection was attributed mainly to the higher concentration of chemically adsorbed oxygen species and surface defects, such as oxygen vacancies, which were promoted by the reduction in the particle size and the removal of CNF, respectively. The sustainable and CNF template-assisted approach represents a promising result for environmentally-friendly synthesis and advanced gas sensing applications.

High Reliability Tungsten-Doped Indium Zinc Oxide Thin Film Transistors for Display Applications

Recently, flat panel display technologies are based on amorphous silicon (a-Si), polycrystalline silicon (poly-Si) or amorphous oxide semiconductor (AOS) thin film transistors (TFTs) technology. In order to reach higher performance for ultra-high resolution display applications, the material selection for the channel layer is vital. AOS TFTs drawn lots of attention because of its advantages such as low leakage current, high driving current and high uniformity [1,3]. In this work, we presented a novel amorphous oxide semiconductor (AOS) material of gallium-free a-InWZnO thin film transistors (IWZO TFTs) which is very promising to be applied for ultra-high resolution display technology. Experiment In this work, we demonstrated the structure of a-IWZO TFTs processes. Figure 1 shows the schematic of the TFT cross-section. After growing a 550 nm thermal oxide layer as buffer layer, a 25-nm-thick of molybdenum was deposited by DC-sputter as the bottom gate electrode. A 10-nm-HfO2 was deposited by plasma-enhanced atomic layer deposition (PEALD) system as high-κ gate dielectric (GI). Then, post deposition annealing (PDA) was carried out to enhance the quality of the insulator layer. Next, an ultra-thin body a-IWZO was deposited by RF-sputter as channel layer. Finally, source and drain were defined by lift-off process and the gate contact via was etched by dry etching to finish the device fabrication. Result and Discussion Figure 1(b) shows the negative gate bias stress (NGBS) transfer curve (ID-VG) of a-IWZO TFTs with passivation layer. The experimental results have shown that passivation layer could keep the back channel of IWZO channel from exposing to oxygen and hydrogen from the atmosphere. Without the passivation layer, the back channel would contact moisture leading the diffused hydrogen atoms to fill oxygen vacancy sites and de-trap free carriers, causing the VTH shifts negatively. The ultra-thin a-IWZO TFTs with passivation layer exhibited a low subthreshold swing (S.S.) of 89.7 mV/dec, high on/off current ratio (ION/IOFF) of 2.1×107 and small threshold voltage shift (ΔVth) of -0.097 V during NGBS of -2MV/cm with 2000s. To sum up, the passivation layer could enhance the a-IWZO TFTs reliability. Reference [1] Kamiya, H. Hosono, NPG Asia Mater., vol. 2, pp. 15, 2010.[2] Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, nature, vol. 432, no. 7016, pp. 488-492, 2004.[3] Y. Kuo, C. M. Chang, I. H. Liu, and P. T. Liu, Scientific reports, vol. 9, no. 1, pp. 1-7, 2019. Figure 1

Review-Extremely Thin Amorphous Indium Oxide Transistors.

Amorphous oxide semiconductor transistors have been a mature technology in display panels for upward of a decade, and have recently been considered as promising back-end-of-line compatible channel materials for monolithic 3D applications. However, achieving high-mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long-standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement-mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, the history leading to the re-emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state-of-the-art indium oxide device research, and the bias stability of the devices are reviewed.

Змочування та контактна взаємодія напівпровідникових оксидних матеріалів Ga2O3, In2O3, ZnO з металічними розплавами у вакуумі

Semiconductor oxide materials such as gallium, indium and zinc oxides play an important role in a development and production of a variety of electronic devices. Experimental studies of these materials allow to define, for example energetic or other physical parameters of the devices created and also to improve existing technologies of their production, metallization and joining of electrocontacts by way of brazing which require additional wetting studies. It should be noted that data on wetting of mentioned oxides by metals are practically absent in literature. Thus a detailed experimental study of the interfacial interaction, adhesion and wetting of Ga2O3, In2O3 and ZnO oxide materials with some pure metal melts (Ga, In, Sn, Au,Ge, Ag, Cu) in vacuum was performed by the sessile drop method using photo- and video- fixing including temporal and temperature dependencies of contact angles. It was found that pure metals don't wet powdery pressed specimens of Ga and In oxides in the temperature range studied and vary in a rather narrow range. For ZnO system the significant effect of experiment temperature and hold-up time on the values of contact angles for some metals (Ga, Ge, Sn, Cu) is observed. For example wetting angles for Ga change from above 90 degrees at low temperatures up to 49 and full spreading at 1173⎯1373 K. This effect may be attributed to the activation of chemical reactions, change of oxide stabilities at high temperatures at the interface. Last metals can be used as adhesive-active additions to base brazing alloy. Keywords: gallium, indium, zinc oxides, semiconductor, wetting, contact interaction, metal melt.

Creation of One- and Two-Dimensional Copper and Zinc Oxides Semiconductor Structures

The most effective methods for the synthesis of nanostructured copper and zinc oxides, which have unique properties and potential applications in a variety of fields including electronics, photonics, sensorics, and energy conversion, are analyzed. Special attention is paid to laser-based methods for synthesizing oxide nanostructures, with an emphasis on the importance of controlling power density distribution to influence the quality and properties of the nanomaterials. The great significance of wavefront shaping techniques for controlling laser-initiated processes is highlighted, which enable precise control over the phase and amplitude of light waves to achieve desired outcomes in optics and laser-assisted formation of one- and two-dimensional structures of oxide semiconductor materials. Diffractive computer optics is presented as a powerful tool for precise beam control. The significance of laser-induced thermochemical processes for creating and improving the properties of ZnO and CuO-based nanomaterials is discussed. The presented analysis shows that the synthesis of nanocomposites based on ZnO and CuO using pulse-periodic laser treatment, coupled with precise laser beam control using free-form diffractive optics, presents novel opportunities for applications in optoelectronics, sensor technology, electronics and portable energy sources manufacturing, and various other fields.

Spray deposited pristine and Mo doped WO3 thin films for acetaldehyde gas sensing at room temperature

In this paper, pure WO3 and molybdenum-incorporated WO3 were directly deposited in the form of thin films on the glass substrate. The films were deposited through the spray pyrolysis technique, and their gas sensing properties, structural, optical, electrical, and morphological properties were altered by adding a dopant to the pristine WO3. A direct, one-step approach is used to deposit metal oxide semiconductor materials as thin films, which enhances the ability to detect gas. A novel gas sensing response for acetaldehyde gas detection was observed from Molybdenum doped WO3 thin film at 25 °C. On investigating the sensing performance of both films for various volatile organic compounds (VOC), a high response (54.55 %) towards acetaldehyde was achieved for 2 % molybdenum-doped WO3 film. The XRD analysis demonstrated that the synthesized films are crystalline with triclinic phase. Decrease in crystallite size increases the grain boundaries that enhance the sensing response. The absorption spectra of UV–Visible spectroscopy showed an apparent change of increase in the absorbance and decrease in the optical band gap on addition of the dopant to the pure WO3 thin film. Filamentous structured porous thin films are discovered to have larger voids and greater surface roughness from FE-SEM and AFM, which aids in the adsorption of gas molecules. Mo-doped WO3 thin films showed a strong sensing response due to larger grain boundary scattering and wide pores abetting for more gas adsorption.

Potential application of Ce doped NiO green synthesised from husk of Cocos nucifera in various types of DSSCs

ABSTRACT In this study, a complete green synthesis procedure was approached to prepare two semiconductor oxide materials NiO and Ce-doped NiO in nanoscale, and natural dyes were extracted from the husk of tender coconut. To our knowledge, this is a novel work that reports Ce-doped NiO synthesized from husk of tender coconut. Coconut is being cultivated in more than 97 countries, and India contributes to 50% of its global production. After consumption of the nutritious liquid from the tender coconut, 33–35% of the fruit (mesocarp and endocarp) are being dumped as agro-wastes. In order to make capital of this wastes, they were utilized in fabricating different types of dye-sensitized solar cells (DSSCs). With the extracted natural dyes, and Rhodamine B, six DSSCs were made with NiO and Ce:NiO and two tandem structured DSSCs were devised with TiO2 as one layer and synthesized NiO materials being the other layer. Tandem cell made with TiO2 and Ce:NiO resulted in the promising power-conversion efficiency of 0.165% and the cell made with TiO2 and NiO exhibited an efficiency of 0.06%.

High sensitivity and fast response sensor for formaldehyde based on In2O3/Sn2O3 heterojunction

Modifying metal oxide semiconductor materials is a primary approach to enhance gas sensor performance, and heterojunction is a promising method to address cross-sensitivity issues in gas sensors. Sn2O3 nanoflower-based substrates and In2O3/Sn2O3 heterojunction structures were successfully synthesized by hydrothermal synthetic method. The gas-sensing performance of the In2O3/Sn2O3 heterojunction-based gas sensor towards formaldehyde gas was investigated. The gas sensor based on In2O3/Sn2O3 heterojunction exhibited higher sensitivity to formaldehyde gas compared to pure Sn2O3 gas sensor at the same operating temperature. The response and recovery rates of the sensor were significantly improved as well. In addition, the In2O3/Sn2O3 gas sensor exhibited lower response to interfering gases compared to its response to formaldehyde gas, thus demonstrating superior selectivity over the pure Sn2O3 sensor. The result provides a research direction for the development of high-performance, highly selective, and rapid response formaldehyde sensors, which has certain reference significance for the advancement of gas sensor technology.

Fabrication of carbon nanotube/ titanium dioxide nanomaterials-based hydrogen sensor using novel two-stage dielectrophoresis process

The porosity and large surface area of carbon nanotubes (CNTs) made them a candidate active material for gas sensing applications. However, the responsivity and sensitivity of CNTs toward hydrogen are lower than those of metal oxide semiconductor materials such as TiO2. The addition of TiO2 to CNTs is found to increase the sensitivity of the resulting composite material at the expense of increasing the resistance. This paper presents a new dielectrophoresis (DEP) process to fabricate nanoparticle-based hydrogen sensors at room temperature. The simple and low-cost process is based on tuning the AC signal frequency to deposit different nanoparticles in stages, forming a composite sensing layer across interdigitated electrodes (IDE). The sensing layers have been characterized using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX), and atomic force microscopy (AFM). Sensors fabricated with only CNTs showed low resistance and weak sensitivity of less than 2%. The sensitivity has increased to 3.42% when CNTs are deposited together with TiO2 in a single stage. However, the sensor shows high resistance because TiO2 particles interrupt the conduction paths of CNTs. A high sensitivity of 15.78% and a low resistance of ∼524 Ω have been achieved when CNTs are deposited individually in the first stage, and followed by depositing the TiO2 in the second stage. This work provides a proof-of-concept that the two-stage DEP enhances the performance of the sensor in terms of sensitivity and resistance compared to single-stage DEP, which is highly desirable in fabricating composite and multi-layer sensing materials.

A novel ethanol sensor with high response based on one-dimensional YFeO3 nanorods

As the cognition of metal oxide semiconductor becomes deeper and deeper, their excellent sensing ability has also been demonstrated. The gas sensors with metal oxide semiconductor as basis materials have become a hot topic at present. Enhancing the sensitivity and reducing the test limit of the sensor are exceedingly important topic. It is crucial to regulate the morphology of metal oxide semiconductor materials to improve the gas sensing performance. Low-dimensional materials such as quantum dots, one-dimensional nanowires and nanorods usually show the excellent gas-sensitive properties. In this work, one-dimensional YFeO3 nanorods were synthesized by electrospinning technology. The one-dimensional rod-like structure enables more active sites to be exposed on the surface of materials, which can effectively promote the adsorption process of the YFeO3 nanorods to the test gases, so as to improve the gas sensing performance. Found by testing the gas sensitivity, YFeO3 nanorods responds far better to ethanol than other tested gases. The response and recovery time of YFeO3 nanorods to 100 ppm ethanol at 350 °C was approximately 19 s and 9 s, respectively. It indicates that the response and recovery ability of YFeO3 nanorods to ethanol were excellent. The study can provide technical reference for subsequent preparation of remarkable performance ethanol sensor and enrich the materials category of gas sensor fields.

Synthesis of TiO&lt;sub&gt;2&lt;/sub&gt; Nanofiber as Photoanode of Dye Sensitized Solar Cells (DSSC)

Recently, dye sensitized solar cell (DSSC) are considered to replace the previous generation of solar cells. DSSC uses an organic dye to absorb light and convert it to electricity. One-dimensional morphological structure of photoanode that provides a straight pathway for electron transport can improve the efficiency of DSSC. TiO2 nanofibers is one-dimensional structure of oxide semiconductor material commonly used as photoanode in DSSC. A simple method to synthesis continuous nanofiber is electrospinning method that use the influence of electrostatic forces. The nanofiber’s diameter that produced by electrospinning method depends on several parameters, one of which is the applied voltage. This study reports the synthesis of TiO2 nanofibers with varying the applied voltages from 10 kV to 14 kV and their performance as photoanode in DSSC. TiO2 nanofibers were electrospun directly onto a TiO2-coated fluorine tin oxide (FTO) substrate from a mixture of titanium (IV) propoxide (TTIP), triton X-100, acetic acid, poly (vinyl) acetate (PVAc) that were dissolved in dimethyl formamide (DMF). TiO2 nanofiber photoanodes were then immersed in ruthenium (II) dye, stacked with a counter electrode, and finally the electrolyte was injected between them. Based on the SEM results, we found that the beads disappeared with increasing applied voltage. The XRD pattern of TiO2 nanofibers indicates the presence of the anatase phase. Based on the photocurrent-voltage characteristic, TiO2 nanofibers produced by applied voltage of 14 kV shows the highest efficiency of 1.11% with JSC 4.78 mA/cm2, VOC 0.74 Volt and fill factor (FF) of 31.37%.

Temperature-dependent formaldehyde and xylene dual selectivity in ZnCo2O4 sphere-like architectures

The gas selectivity of gas sensing materials based on oxide semiconductors is an important parameter for evaluating their functions. Revealing the dominant factor of sensing selectivity is a prerequisite for optimizing gas sensing performance. Herein, the temperature-dependent gas sensing selectivity is achieved in ZnCo2O4 sphere-like architectures via simple solvothermal-annealing treatments instead of noble metal loading or heterojunction construction. The ZnCo2O4 sphere-like architectures after two solvothermal-annealing treatments show superior selectivity to formaldehyde at 100 ℃ and simultaneously present high xylene selectivity at 180 ℃. However the as-prepared ZnCo2O4 sphere-like architectures without treatments merely exhibit high selectivity to formaldehyde at 100 ℃. Such gas sensing behaviors prominently stem from the catalytic promotion discrepancy induced by oxygen vacancies at different working temperatures. The feasible gas sensing selectivity regulation strategy holds great promise for other oxide semiconductor materials.

Solution‐Processed PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

With the introduction of the concept of dopant‐free carrier‐selective contact for c‐Si photovoltaics, Si‐based heterojunction solar cells can greatly reduce production costs by optimizing the manufacturing process while maintaining high power conversion efficiency. Compared with processes that rely on complex vacuum equipment, low‐temperature solution processing has many advantages over conventional silicon solar cells. However, research on low‐cost and high‐efficiency solar cells based on p‐type crystalline silicon is relatively rare. From the point of view regards energy band matching, the inorganic metal oxide semiconductor material ZnO is well suited for low‐cost solution method studies due to its easy preparation, very high transmittance in the visible spectrum, low cost, and suitable energy levels matching p‐Si. Herein, ZnO is spin coated on the back of p‐Si to form a heterojunction, together with spin coating of PEDOT:PSS on the front side as the hole transport layer and passivation layer, a PEDOT:PSS/p‐Si/ZnO‐structured p‐Si‐based backcontact hybrid solar cell is successfully fabricated at low temperature (≤135 °C) via solution process with a PCE of 9.77% (Voc = 0.56 V, Jsc = 25.99 mA cm−2, fill factor = 67.10%). This work provides a promising approach for fabricating high‐performance and low‐cost silicon‐based heterojunction solar cells.