Oxide Junctions Research Articles

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

We present a simulation-based study for identifying promising cell structures, which integrate poly-Si on oxide junctions into industrial crystalline silicon solar cells. The simulations use best-case measured input parameters to determine efficiency potentials. We also discuss the main challenges of industrially processing these structures. We find that structures based on p-type wafers in which the phosphorus diffusion is replaced by an n-type poly-Si on oxide junction (POLO) in combination with the conventional screen-printed and fired Al contacts show a high efficiency potential. The efficiency gains in comparsion to the 23.7% efficiency simulated for the PERC reference case are 1.0% for the POLO BJ (back junction) structure and 1.8% for the POLO IBC (interdigitated back contact) structure. The POLO BJ and the POLO IBC cells can be processed with lean process flows, which are built on major steps of the PERC process such as the screen-printed Al contacts and the text{Al}_text{2 }text{O}_text{3 }/text{SiN } passivation. Cell concepts with contacts using poly-Si for both polarities (text{POLO}^2-concepts) show an even higher efficiency gain potential of 1.3% for a text{POLO}^2 BJ cell and 2.2% for a text{POLO}^2 IBC cell in comparison to PERC. For these structures further research on poly-Si structuring and screen-printing on p-type poly-Si is necessary.

Quantum Limited SIS Receiver Technology for the Detection of Water Isotopologue Emission From Comets

NASA's Planetary Science Decadal Survey has concluded that isotopic measurements of cometary water vapor are a means to unraveling the mysteries involving the origin of Earth's water and the evolution of our solar system. To support this, a recent Jet Propulsion Laboratory internal research program has developed quantum limited superconductor–insulator–superconductor (SIS) receivers in the important 500 $-$ 600 GHz submillimeter frequency band. These instruments can be used to detect the deuterated water (HDO) ground state (1 $_{10}$ –1 $_{01}$ ), H $_2^{16}$ O ortho ground state (1 $_{10}$ –1 $_{01}$ ), and the oxygen isotopologues H $_2^{17}$ O and H $_2^{18}$ O with exquisite sensitivity. To achieve the presented results, we have investigated aluminum oxide (AlO $_x$ ) and aluminum nitride (AlN $_x$ ) barrier SIS tunnel junction mixers on the 6- $\mu$ m silicon-on-insulator substrate. The AlO $_x$ and AlN $_x$ junction mixer blocks utilize diagonal and smooth-profile conical horns, respectively. In both cases, a commercial 4–8-GHz intermediate frequency low-noise amplifier (LNA) has been integrated into the mixer block. The AlO $_x$ (low-current-density) barrier SIS junctions were fabricated with 2- $\mu$ m gold beam-lead technology, whereas in the case of the AlN $_x$ SIS tunnel junction, we use capacitive RF decoupling tabs. The latter approach simplifies fabrication, increases yield, eases the mounting process, and facilitates scaling to higher frequencies. For an actual flight mission, with operation $\leq$ 4.2 K, the allowed heat dissipation of the mixer-integrated LNA needs to be minimized. In this article, we also investigate the receiver sensitivity as a function of the LNA dc power consumption. We find that the dc power consumption of the LNA can be reduced to $\sim$ 1.6 mW with minimal loss in sensitivity. It is anticipated that the continued InP HEMT development for quantum computer applications are likely to reduce the required LNA power dissipation even further.

Parameters of the Tunnel Barrier of Superconducting Niobium-Based Structures

The main parameters of the tunnel barrier of Josephson Nb/AlOx/Nb and Nb/AlN/Nb junctions are estimated in a wide range of the current density using the Simmons method. The dependences of the tunnel barrier height and width of the resistivity are determined experimentally for each type of the junctions. A decrease in the tunnel barrier height of the junction with the AlN interlayer by 0.3 eV as compared to an oxide junction enables us to obtain the junctions with a current density higher than 15 kA/cm2 at an insulating layer thickness of 10 A allowable technologically, which gives the possibility to obtain quality parameter Rj/Rn no lower than 25.

Self-powered broadband photodetection using PbS decorated ZnO nanorods/reduced graphene oxide junction

Vertically aligned ZnO nanorods (NRs) were grown on fluorine doped tin oxide (FTO) coated glass substrates using hydrothermal method. Self-powered broadband photodetector was fabricated with PbS decorated ZnO NRs and reduced graphene oxide (RGO) junction. ZnO NRs/PbS/RGO device demonstrated significant photocurrent over broad spectral range 350–700 nm. Our photodetector showed maximum external quantum efficiency (EQE) ~78%, responsivity Rλ ~0.25A/W and detectivity (Dλ ) ~82944.55Hz1/2/W at 400 nm under zero bias. The transient photoresponse of the device exhibited fast response (~65 ms) and recovery time (~74 ms). Such PbS/ZnO NRs p-n heterojunction also demonstrated photovoltaic properties with open circuit voltage (VOC) ~ 0.27 V, short circuit current (JSC) ~1.03 mA/cm2 and power conversion efficiency (PEC) ~0.73% under illumination of white light of intensity 100 mW/cm2.

Vertically aligned carbon nanotubes grown on reduced graphene oxide as high-performance thermal interface materials

Efficient thermal dissipation is one of the most critical factors constraining the development of modern microelectronic devices. Placing vertically aligned carbon nanotubes (VACNTs) with anisotropic thermal conductive between high-power devices and heat sink such as copper plate can improve the interfacial thermal conductance. Due to the limited contact area between CNTs and the surface of the devices, direct use of ACNTs as thermal interface material fails to meet people’s expectations. Here, we employ reduced graphene oxide (rGO) as the substrate for the growth of CNT arrays. VACNTs grown on rGO (rGO-ACNT) by chemical vapor deposition are then used as thermal conducting filler in epoxy resin. Compared with direct contact between CNT and the interface, using CNT and reduced graphene oxide junction to form contact with the surface can improve heat transfer efficiency. The resultant composite film exhibited excellent thermal conductivity at 9.62 W m−1 K−1 along the thickness direction. The obtained rGO-ACNT and its composite present higher thermal conductivity and heat transfer ability than ACNT. This strategy offers an insight into the easy preparation of flexible and highly thermal conductive composite materials, which may enable potential applications in advanced electronic devices.

Ultrahigh Brightening of Infrared PbS Quantum Dots via Collective Energy Transfer Induced by a Metal-Oxide Plasmonic Metastructure

We demonstrate that a solution-processed heterojunction interface formed via the addition of a thin buffer layer of CdSe/ZnS quantum dots (QDs) to a functional metal oxide plasmonic metastructure (FMOP) can set up a collective interquantum dot energy-transport process, significantly enhancing the emission of infrared PbS quantum dots. The FMOP includes a Schottky junction, formed via deposition of a Si layer on arrays of Au nanoantennas and a Si/Al oxide charge barrier. We show when these two junctions are separated from each other by about 15 nm and the CdSe/ZnS quantum dot buffer layer is placed in touch with the Si/Al oxide junction, the quantum efficiency of an upper layer of PbS quantum dots can increase by about 1 order of magnitude. These results highlight a unique energy circuit formed via collective coupling of the CdSe/ZnS quantum dots with the hybridized states of plasmons and diffraction modes of the arrays (surface lattice resonances) and coupling between such resonances with PbS QDs via lattice-induced photonic modes.

Photo/Electrochemical Applications of Metal Sulfide/TiO2 Heterostructures

AbstractDeveloping efficient and affordable catalysts is of great significance for energy and environmental sustainability. Heterostructure photocatalysts exhibit a better performance than either of the parent phases as it changes the band bending at the interfaces and provides a driving force for carrier separation, thus mitigating the effects of carrier recombination and back‐reaction. Herein, the photo/electrochemical applications of a variety of metal sulfides (MSx) (MoS2, CdS, CuS, PbS, SnS2, ZnS, Ag2S, Bi2S3, and In2S3)/TiO2 heterojunctions are summarized, including organic degradation, water splitting, and CO2 reduction conversion. First, a general introduction on each MSx material (especially bandgap structures) will be given. Then the photo/electrochemical applications based on MSx/TiO2 heterostructures are reviewed from the perspective of light harvesting ability, charge carrier separation and transportation, and surface chemical reactions. Special focus is given to CdS/TiO2 and PbS/TiO2‐based quantum dot sensitized solar cells. Ternary composites by taking advantages of positive synergetic effects are also well summarized. Finally, conclusions are made regarding approaches for structure design, and the authors' perspective on future architectural design and electrode construction is given. This work will make up the gap for TiO2 nanocomposites and shed light on the fabrication of more efficient MSx‐metal oxide junctions in photo/electrochemical applications.

For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?

AbstractWe present a systematic study on the benefit of the implementation of poly‐Si on oxide (POLO) or related junctions into p‐type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell (PERC). We assess three aspects: (a) the simulated efficiency potential of representative structures with POLO junctions for none (=PERC+), one, and for two polarities; (b) possible lean process flows for their fabrication; and (c) experimental results on major building blocks. Synergistic efficiency gain analysis reveals that the exclusive suppression of the contact recombination for one polarity by POLO only yields moderate efficiency improvements between 0.23%abs and 0.41%abs as compared with PERC+ because of the remaining recombination paths. This problem is solved in a structure that includes POLO junctions for both polarities (POLO2), for whose realization we propose a lean process flow, and for which we experimentally demonstrate the most important building blocks. However, two experimental challenges—alignment tolerances and screen‐print metallization of p+ poly‐Si—are unsolved so far and reduced the efficiency of the “real” POLO2 cell as compared with an idealized scenario. As an intermediate step, we therefore work on a POLO IBC cell with POLO junctions for one polarity. It avoids the abovementioned challenges of the POLO2 structure, can be realized within a lean process flow, and has an efficiency benefit of 1.59%abs as compared with PERC—because not only contact recombination is suppressed but also the entire phosphorus emitter is replaced by an n+ POLO junction.

On-Demand Visible-Light Sensing with Optical Memory Capabilities Based on an Electrical-Breakdown-Triggered Negative Photoconductivity Effect in the Ubiquitous Transparent Hafnia.

A transparent visible-light sensor may sound like an oxymoron. Indeed, this scenario is often deemed challenging in conventional photosensitive semiconducting materials due to the complementary relationship between absorbance (which determines photosensitivity) and transmittance (which determines transparency). Past studies have relied on photoinduced ionization of vacancy defect states within a wide-band-gap oxide to modulate the flow of current or charge storage in specific device structures such as nanorods, hetero oxide junctions, or thin-film transistors. Here, we demonstrate visible-light-sensing and optical memory functions in a thin, optically transparent wide-band-gap oxide such as the ubiquitous hafnium dioxide, following a soft electrical breakdown. The physical mechanism is distinguished by a persistent current decrease that spans several orders of magnitude, indicating that the breakdown oxide is restored by the visible light. Physical characterization by X-ray photoelectron spectroscopy and the first-principles simulation study based on the density functional theory provide a strong support for the proposed light-assisted recombination of electrically induced Frenkel-pair defects as the underlying mechanism for the observed negative photoconductance response and optical memory effect. By harnessing this alternative mechanism, this work demonstrates a different approach of overcoming the traditional barrier in realizing both transparency and on-demand visible-light sensing with optical memory functions all in a single device.

Electron pairing in the pseudogap state revealed by shot noise in copper oxide junctions.

In the quest to understand high-temperature superconductivity in copper oxides, debate has been focused on the pseudogap-a partial energy gap that opens over portions of the Fermi surface in the 'normal' state above the bulk critical temperature1. The pseudogap has been attributed to precursor superconductivity, to the existence of preformed pairs and to competing orders such as charge-density waves1-4. A direct determination of the charge of carriers as a function of temperature and bias could help resolve among these alternatives. Here we report measurements of the shot noise of tunnelling current in high-quality La2-xSrxCuO4/La2CuO4/La2-xSrxCuO4 (LSCO/LCO/LSCO) heterostructures fabricated using atomic layer-by-layer molecular beam epitaxy at several doping levels. The data delineate three distinct regions in the bias voltage-temperature space. Well outside the superconducting gap region, the shot noise agrees quantitatively with independent tunnelling of individual charge carriers. Deep within the superconducting gap, shot noise is greatly enhanced, reminiscent of multiple Andreev reflections5-7. Above the critical temperature and extending to biases much larger than the superconducting gap, there is a broad region in which the noise substantially exceeds theoretical expectations for single-charge tunnelling, indicating pairing of charge carriers. These pairs are detectable deep into the pseudogap region of temperature and bias. The presence of these pairs constrains current models of the pseudogap and broken symmetry states, whilephase fluctuations limit the domain of superconductivity.

Highly elastic conductive sponges by joule heat-driven selective polymer reinforcement at reduced graphene oxide junctions

Polymer reinforcement of reduced graphene oxide (rGO) sponges is widely employed to enhance mechanical strength and elasticity. However, the surplus polymer decreases electrical conductivity by passivating the conductive surface of rGO flakes. Here we firstly report the selective polydimethylsiloxane (PDMS) reinforcement at the flake junction of rGO sponge by the Joule heating process utilizing the high electrical contact resistance. The preferential Joule heating of the junction is theoretically simulated by finite element modeling and experimentally confirmed by micro-thermal infrared imaging. The local temperature increase results in the further reduction of rGO and preferential PDMS curing at the flake junction only. The PDMS/rGO mass ratio was carefully optimized at 3.96. The electrical conductivity (0.087 S m−1 at 0% strain) is more than an order of magnitude higher than that (0.00251 S m−1) of the conventional oven-heated sponge with a similar PDMS/rGO mass ratio. The mechanical strength is equivalent (210.3 kPa at 70% strain), in spite of the preferential polymer coating at the rGO flake junction only, with excellent elasticity. The Joule heating method is an excellent curing strategy to selectively reinforce flake junctions for conductive elastic rGO-polymer sponges.

(Invited) heterostructured “Binary Materials” for Photodetection from Mid-Infrared, Visible, to X-Ray

Light-matter interaction is a long-lasting theme in condensed matter physics and optoelectronics. Light detection in different wavelength regimes is the foundation of a wide range of sensing, imaging, medical and surveillance technologies. In this talk I will discuss the use of transition-metal oxides, hybrid organo-metal perovskites and other nanomaterials in "binary" mixed-dimensional heterostructures with proper bandgaps and architectures to detect photons with different wavelengths. First, for visible light detection, we demonstrate that combining 3D hybrid perovskites with high-mobility 1D carbon nanotubes or 2D two-dimensional metal dichalcogenides significantly enhances charge transport and device performance. Second, we report a mid-infrared (up to 10 um) hybrid graphene photodetector enabled via coupling graphene with a narrow bandgap semiconductor Ti2O3. Finally, using epitaxial ferroelectric/semiconductor oxide junctions with a current-perpendicular-to-plane geometry, we achieve a new X-ray detector with colossal persistent X-ray-induced photoconductivity.

The 12-HHT/BLT2/NO Axis Is Associated to the Wound Healing and Skin Condition in Different Glycaemic States.

Type 2 diabetes affects over 340 million people worldwide. This condition can go unnoticed and undiagnosed for years, leading to a late stage where high glycaemia produces complications such as delayed wound healing. Studies have shown that 12-HHT through BLT2, accelerates keratinocyte migration and wound healing. Additionally, evidence has shown the role of nitric oxide as a pro-regenerative mediator, which is decreased in diabetes. Our main goal was to study the association between the 12-HHT/BLT2 axis and the nitric oxide production in wound healing under different glycaemia conditions. For that purpose, we used in vivo and in vitro models. Our results show that the skin from diabetic mice showed reduced BLT2 and iNOS mRNA, TEER, 12-HHT, nitrites, and tight junction levels, accompanied by higher MMP9 mRNA levels. Furthermore, a positive correlation between BLT2 mRNA and nitrites was observed. In vitro, HaCaT-BLT2 cells showed higher nitric oxide and tight junction levels, and reduced MMP9 mRNA levels, compared to mock-keratinocytes under low and high glucose condition. The wound healing capacity was associated with higher nitric oxide production and was affected by the NOS inhibition. We suggest that the BLT2 expression improves the keratinocyte response to hyperglycaemia, associated with the production of nitric oxide.

Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells

Polycrystalline silicon on oxide (POLO) junction passivating contacts have recently been demonstrated as carrier selective contacts for high-efficiency silicon solar cells. The carrier transport through these contacts has been attributed to two competing mechanisms: 1) carrier tunneling through ultrathin oxide and 2) transport through weak spots (pinholes) – the nanoscale regions where oxide thickness has been completely or partially compromised during the processing. In this paper, we use two dimensional device simulations to compare the relative effects of these mechanisms on solar cell characteristics with n-type POLO contact. We show that variation in pinhole areal density ( $ {D}_{\text {ph}}$ ) or the tunnel oxide thickness ( $ {t}_{\text {ox}}$ ) both result in qualitatively similar trends in the cell characteristics under dark and light. For a given $ {t}_{\text {ox}}$ , an exponential variation in $ {D}_{\text {ph}}$ results in trends that are similar to those for a linear variation in $ {t}_{\text {ox}}$ . The effect of pinholes on contact resistance ( $\rho _{\text {c}}$ ) and saturation current density ( ${J} _{\text {o}}$ ) is most significant for relatively thicker oxides (≥ 2 nm). For $ {t}_{\text {ox}}~\leq1$ nm, $\rho _{\text {c}}$ and ${J} _{\text {o}}$ become essentially insensitive to pinholes for $ {D}_{\text {ph}}\,\, . The modeling results are compared with a set of published experimental data to predict the possible roles of various mechanisms.

Vitamin A deficiency impairs intestinal physical barrier function of fish

The present study was the first to investigate the effects of dietary vitamin A (VA) on the intestinal physical barrier function associated with oxidation, antioxidant system, apoptosis and cell-cellular tight junction (TJ) in the proximal (PI), mid (MI) and distal (DI) intestines of young grass carp (Ctenopharyngodon idella). Fish were fed graded levels of dietary VA for 10 weeks, and then a challenge test using an injection of Aeromonas hydrophila was conducted for 14 days. Results indicated that dietary VA deficiency caused oxidative damage to fish intestine partly by the reduced non-enzymatic antioxidant components glutathione (GSH) and VA contents as well as reduced antioxidant enzyme activities [not including manganese superoxide dismutase (MnSOD)]. Further results observed that the decreased antioxidant enzyme activities by VA deficiency were partly related to the down-regulation of their corresponding mRNA levels which were regulated by the down-regulation of NF-E2-related factor 2 (Nrf2) mRNA levels and up-regulation of kelch-like-ECH-associated protein (Keap1a) (rather than Keap1b) mRNA levels in three intestinal segments of fish. Meanwhile, VA deficiency up-regulated the mRNA levels of the apoptosis signalling [caspase-3, caspase-8, caspase-9 (rather than caspase-7)] associated with the inhibition of the target of rapamycin (TOR) signalling pathway in three intestinal segments of fish. Additionally, VA deficiency decreased the mRNA levels of TJ complexes [claudin-b, claudin-c, claudin-3, claudin-12, claudin-15a, occludin and zonula occludens-1 (ZO-1) in the PI, MI and DI, as well as claudin-7 and claudin-11a in the MI and DI] linked to the up-regulation of myosin light chain kinase (MLCK) signalling. These results suggested that VA deficiency impaired structural integrity in three intestinal segments of fish. Meanwhile, excessive VA also showed similar negative effects on these indexes. Taken together, the current study firstly demonstrated that VA deficiency impaired physical barrier functions associated with impaired antioxidant capacity, aggravated cell apoptosis and disrupted TJ complexes in the PI, MI and DI, but different segments performed different actions in fish. Based on protecting fish against protein oxidation, the optimal VA levels for grass carp were estimated to be 2622 IU/kg diet.

Dietary cysteamine hydrochloride protects against oxidation, inflammation, and mucosal barrier disruption of broiler chickens challenged with Clostridium perfringens.

This study aimed to investigate the effect of dietary cysteamine hydrochloride (CSH) on the growth performance, oxidation, inflammation, and gene expression of cytoskeleton and tight junction in the intestinal mucosa of broiler chickens challenged with Clostridium perfringens (C. perfringens). A total of 360 one-day-old broiler chicks were randomly distributed into 5 groups for a negative control (NC, without C. perfringens challenge), a positive control (PC, with C. perfringens challenge), and PC plus CSH at 100, 150, or 200 mg/kg of diet. The results showed that average daily gain, gain:feed, cecal population and enterotoxin of C. perfringens were negatively affected (P < 0.05) by the C. perfringens challenge, but were conversely affected (P < 0.05) by the CSH supplementation, and G:F reached to the level of NC group. The PC group increased (P < 0.05) serum diamine oxidase, malondialdehyde, protein carbonyl, interleukin-6, interleukin-1β, and tumor necrosis factor-α, whereas the supplementation of CSH decreased (P < 0.05) these parameters. Moreover, the C. perfringens challenge worsened the disruption of intestinal mucosal cytoskeleton and tight junction by downregulating (P < 0.05) the mRNA levels of actin protein of muscle Z-line alpha, syncoilin, synemin, tubulin, claudin-1, and zona occludens protein-2, while these parameters were partially compensated (P < 0.05) by CSH supplementation. For the dose trends of CSH, there were linear and quadratic (P < 0.05) effects on gain:feed, enterotoxins, tumor necrosis factor-α, tubulin alpha 1c, syncoilin, and synemin. In conclusion, the CSH can be an alternative against C. perfringens infection by beneficially regulating gut pathogenic bacteria and enterotoxins, oxidation, inflammation, cytoskeleton, and tight junction in broiler chickens.

Dependence of interfacial properties of p-Cu2O/electrolyte and p-Cu2O/Au junctions on the electrodeposition bath pH of p-Cu2O films

Improvements in electrodeposited cuprous oxide (Cu2O) junction devices could contribute to development of a wider range of affordable and environmentally friendly electronic devices. In this regard, ability of controlling interfacial properties of contacts of Cu2O thin films with other suitable materials will be a very important property. A study on interfacial properties of p-Cu2O/Au and p-Cu2O/electrolyte junctions was conducted using capacitance-voltage and current-voltage measurements. It was found that pH of p-Cu2O film deposition bath has a significant effect on junction properties of Cu2O. Particularly, flat band potential at p-Cu2O/electrolyte interface and built-in potential at p-Cu2O/Au interface were shifted positively by the increase of deposition bath pH of p-Cu2O films. Also, it was revealed that the shift was more pronounce at p-Cu2O/Au interface compared to that at p-Cu2O/electrolyte interface. The observed shifts in flat band potential and built in potentials were correlated with the shifts in relative band edge positions at the interfaces and with the change in net surface charge on the interfacial layers. It was observed, for the first time, that built in potential at p-Cu2O/Au junction can be controlled with bath pH of p-Cu2O films so that the junction can make either ohmic or non ohmic. Further, it was found that surface modification of p-Cu2O films with sulphidation reduces barrier height at p-Cu2O/Au junction and make the contact ohmic irrespective of bath pH of p-Cu2O films. We report here, for the first time, that relative band edge position at interfaces of electrodeposited p-Cu2O junctions can be controlled with pH of film deposition bath and surface modification. This will be very useful in application of electrodeposited p-Cu2O thin films in solar cells and other junction devices.

Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions

Carrier selective junctions using a poly-silicon/ silicon oxide stack on crystalline silicon feature low recombination currents J0 whilst allowing for low contact resistivity ρC. We describe the limiting current transport mechanism as a combination of homogeneous tunneling through the interfacial silicon oxide layer and transport through pinholes where the interfacial silicon oxide layer is locally disrupted. We present an experimental method and its theoretical basis to discriminate between homogenous tunneling and local pinhole transport mechanisms on n + /n or p + /p junctions by measuring the temperature-dependent contact resistance. Theory predicts opposing trends for the temperature dependencies of tunneling and pinhole transport. This allows identifying the dominant transport path. For the contact resistance of two differently prepared poly-Si/ silicon oxide/ c-Si junctions we either find clear pinhole-type or clear tunneling-type temperature dependence. Pinhole transport contributes more than 94% to the total current for the sample with a 2.1 nm-thick interfacial silicon oxide that we anneal at a temperature of 1050 °C to achieve highest selectivity. In contrast pinhole transport contributes less than 35 % to the total current for the sample with a 1.7 nm-thick silicon oxide that we annealed at only 700 °C in order to avoid pinholes.

Electrochemically prepared oxides for resistive switching devices

Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (generated by the presence of oxygen vacancies into the oxide) and extended states. Impedance measurements disclosed the formation of n-type Nb2O5 and insulating HfO2. Pt top electrode was deposited onto the metal/anodic oxide junctions to fabricate ReRAM cells. Whereas switching behaviour of Nb/anodic Nb2O5/Pt cells was not reliable, good endurance and retention performances were proved in the case of Hf/anodic HfO2/Pt cells, showing that electrochemical growth of the oxides can be a reliable way to fabricate solid electrolytes for resistive switching memories.

Acidosis potentiates endothelium-dependent vasorelaxation and gap junction communication in the superior mesenteric artery

Extracellular pH is an important physiological determinant of vascular tone that is normally maintained within 7.35–7.45. Any change outside this range leads to severe pathological repercussions. We investigated the unknown effects of extracellular acidosis on relaxation in the superior mesenteric artery (SMA) of goat. SMA rings were employed to maintain isometric contractions at extracellular pH (pHo) 7.4 and 6.8. We analyzed the effect of acidosis (pHo 6.8) compared to physiological pH (pHo 7.4) on three signaling mediators of endothelium-dependent hyperpolarization: nitric oxide (NO), prostaglandin I2 (PGI2), and myoendothelial gap junctions (MEGJ). NO and cyclic guanosine monophosphate (cGMP) levels were compared between normal and acidic pH. Quantitative real-time PCR (qPCR) studies determined the change in expression of vascular connexin (Cx), Cx37, Cx40, and Cx43. Under acidosis, acetyl choline-induced relaxation was augmented in an endothelium-dependent manner via eNOS-NO-cGMP signaling. Conversely, at normal pH, acetyl choline-induced vasorelaxation was mediated primarily via COX-PGI2 pathway. The functional activity of MEGJ was increased under acidosis as evident from increased sensitivity of connexin blockers and upregulated gene and protein expression of connexins. In conclusion, acetyl choline-induced augmented vasorelaxation under acidosis is mediated by NOS-NO-cGMP, with a partial role of MEGJ as EDH mediators in the SMA. Present data suggest a novel role of connexin as therapeutic targets to attenuate the detrimental effect of acidosis on vascular tone.