Oxide Heterointerfaces Research Articles

Carrier tuning of 2D electron gas in field-effect devices based on Al2O3/ZnO heterostructures.

Two-dimensional electron gas (2DEG) formed at oxide heterointerfaces via atomic layer deposition (ALD) has attracted considerable interest toward fascinating electron-related physics and electronic device applications. The employment of oxide-based 2DEG in a confined channel in field-effect transistors (FETs) holds great promise for advanced electronic devices due to its high mobility, spatial confinement, and tunable conductivity. In this work, a 2DEG FET based on the Al2O3/ZnO heterostructure is fabricated with an optimized channel carrier density and oxide thickness. The carrier transport in the bulk and the oxide interface dominantly governed by percolation conduction, optical phonon scattering, and grain boundary scattering is comparatively studied through oxygen annealing and thickness engineering. A tunable carrier density from 4 × 1011 cm-2 to 2 × 1014 cm-2 is achieved with a maximum Hall mobility of ∼62 cm2 V-1 s-1. The electron distribution associated with the annealing process of the ZnO underlayer and the interface reaction during Al2O3 deposition are found to have an impact on the electrical characteristics of the devices. The fabricated Al2O3/ZnO-based 2DEG FET exhibits an on/off ratio over 108, a subthreshold swing of 224 mV dec-1, and a field-effect mobility of 5.7 cm2 V-1 s-1 which can be promising for advanced oxide thin film-containing device and system applications.

Metal–oxide heterointerface synergistic effects of copper–zinc systems for highly selective CO2-to-CH4 electrochemical conversion

Highly efficient CO2 electroreduction to methane (CH4) is achieved over a precisely controlled Cu–ZnO heterointerface system, delivering a superior activity with a faradaic efficiency of up to 72.4% at −0.7 V vs. RHE.

Superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures

Complex oxide heterointerfaces can host a rich of emergent phenomena, and epitaxial growth is usually at the heart of forming these interfaces. Recently, a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO3 single-crystal substrates and films of other oxides. Unexpectedly, rare of these oxide films was epitaxially grown. Here, we report the existence of superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures, with a superconducting transition temperature of ∼ 0.5 K. Meanwhile, no superconductivity was detected in the (001)- and (110)-orientated LaVO3/KTaO3 heterostructures down to 50 mK. Moreover, we find that for the LaVO3/KTaO3(111) interfaces to be conducting, an oxygen-deficient growth environment and a minimum LaVO3 thickness of ∼ 0.8 nm (∼ 2 unit cells) are needed.

Anionic Flow Valve Across Oxide Heterointerfaces by Remote Electron Doping.

As an analogue of charged electron flows, the ionic flow could be controlled by the electronic band alignment due to the ambipolar nature of diffusion in the ionic crystal. Here, we demonstrate the active control of the anionic diffusion across heterointerfaces through remote electron doping in the capping layers. In contrast to the spontaneous ionic flux from the underlying VO2 layers to the undoped TiO2 capping layers, the activated Nb dopants in the TiO2 capping layers substantially restrict the ionic flux, despite identical growth conditions. The increase of Fermi level by Nb donors in TiO2 prevents electron flux from being generated across the interfaces by the heightening of a Schottky barrier; this electron shortage generates a kinetic close valve for the flow of negatively charged oxygen ions. Thus, these results demonstrate the importance of electron supply on charged ionic flow, thereby suggesting an unprecedented strategy for ionic-defect-induced emergent properties at interfaces.

Molybdenum Oxide/Dopamine-Derived Carbon Electrodes with Enhanced Electrochemical Activity in Energy Storage Systems

Herein, a versatile sol-gel reaction produces new electrode materials consisting of tightly integrated molybdenum oxide and carbon derived from chemically incorporated dopamine molecules, and the materials show enhanced electrochemical activity in nonaqueous Li-ion and aqueous Zn-ion energy storage systems. The novel synthesis entails the oxidation of molybdenum in aqueous solutions of excess and limited dopamine (Dopa) hydrochloride via a hydrogen peroxide-initiated process.The transformation of molybdenum under the condition of Dopa excess (Mo:Dopa molar ratio of 1:1) resulted in the formation of a metastable precipitate of polydopamine (PDopa) spheres encapsulated by Dopa-preintercalated molybdenum oxide, (Dopa)xMoOy@PDopa. Hydrothermal treatment (HT) of (Dopa)xMoOy@PDopa precursor was concomitant with concurrent Dopa carbonization and molybdenum reduction processes, resulting in a formation of spherical matrices of Dopa-derived carbon decorated by MoO2 nanoplatelets (HT-MoO2/C), as determined through FTIR spectroscopy, Raman spectroscopy, and SEM imaging. Annealing (An) of HT-MoO2/C at 600°C under argon atmosphere (AnHT-MoO2/C) led not only to improvements in MoO2 crystallinity, but also to an increased oxidation state of molybdenum and a facilitated interaction between molybdenum-based and Dopa-derived components, resulting in an intimate MoO2/C heterointerface. Consequently, while both HT-MoO2/C and AnHT-MoO2/C showed reversible intercalation-type behavior when evaluated as electrodes versus Li/Li+ in nonaqueous lithium-ion cells, AnHT-MoO2/C demonstrated higher capacities, enhanced capacity retention, better rate capability, and lower charge transfer resistance. The AnHT-MoO2/C electrode showed an initial specific capacity of 260 mAh/g and 67% capacity retention after 50 cycles at 10 mA/g, compared to an initial specific capacity of 235 mAh/g and 47% capacity retention shown by HT-MoO2/C at the same current density. Furthermore, in rate capability experiments, HT-MoO2/C and AnHT-MoO2/C delivered specific capacities of 93 mAh/g and 120 mAh/g respectively at 100 mA/g.When molybdenum was transformed in the presence of Dopa deficit (Mo:Dopa molar ratio of 5:1), a (Dopa)xMoOy powder precursor was isolated, and subsequent hydrothermal treatment of this precursor produced an MoO3 material with carbonized Dopa molecules, HT-MoO3/C. Reference α-MoO3 electrodes (α-MoO3-ref) were synthesized similarly but in the absence of Dopa molecules in the initial sol-gel reaction. The appearance of characteristic D and G bands in the Raman spectra and distinct vibrational modes in the FTIR spectra of HT-MoO3/C confirmed the presence of carbon in its structure. SEM images showed a uniform nanobelt morphology with fragmentation due to interactions between interlayer Dopa and MoO3 layers under the conditions of hydrothermal treatment. HT-MoO3/C delivered a second-cycle capacitance of 141.4 F/g when cycled at 2 mV/s in a -0.25–0.70 V versus Ag/AgCl potential window in 5M ZnCl2 electrolyte, while α-MoO3-ref delivered a nearly two-fold smaller second-cycle capacitance of 76.1 F/g under the same conditions. HT-MoO3/C also showed increased capacitance compared to α-MoO3-ref when cycled at increasing sweep rates up to 20 mV/s. The superior performance of HT-MoO3/C prompted a study of the electrode in an expanded potential window, based on previous reports in which MoO3 showed electrochemical activity at negative potentials versus Ag/AgCl. The HT-MoO3/C electrode exhibited a capacitance of 347.6 F/g on the second cycle when cycled between -0.85–1.00V versus Ag/AgCl at 2 mV/s in 5M ZnCl2 electrolyte.This work demonstrates a new strategy to improve the electrochemical performance of transition metal oxide electrodes for next-generation energy storage systems. Integration of oxides with carbon through the wet chemistry synthesis approaches that involve carbonization of organic molecules can be used to control oxide crystal phase and heterointerfaces leading to improved charge transfer and energy storage properties.

Carbide-directed enhancement of electrochemical hydrogen evolution reaction on tungsten carbide–oxide heterostructure

Carbide–oxide heterointerfaces have been known to be responsible for electrochemical activity, however, it is rarely investigated in tungsten carbide-oxide heterostructure for the hydrogen evolution reaction (HER). Furthermore, typical carbide preparation includes carbonization of oxide under gaseous carbon sources at a high temperature, resulting in sintering and collapse of the heterostructures. In this work, nano-sized carbon dots (CDs, ∼2 nm in diameter) were adopted as carbon sources and dispersed on tungsten oxide nanorods allowing abundant nucleation sites for oxide-to-carbide conversion, resulting in high density of carbide-oxide heterointerfaces. The resulting tungsten carbide-oxide heterostructure decorated with carbon dots (WO(3−x) − WCy/CDs) exhibited superior electrocatalytic activity toward the HER with a low overpotential of 65 mV at a current density of − 10 mA cm−2 in acidic media. This performance is among the best electrocatalytic activities compared to the state-of-the-art tungsten carbide-based electrocatalysts. Importantly, the single-cell test using WO(3−x) − WCy/CDs as the cathode showed a current density of 10 mA cm−2 with a cell voltage of only 1.47 V, which is very close to that for Pt/C (1.41 V). In addition, a combined analysis of the X-ray spectroscopic and electrochemical results suggested an optimal W–C ratio in the tungsten carbide-oxide composite to guarantee the high HER activity. Theoretical calculations provided more insight into the carbide-directed enhancement of the electrocatalytic activity of WO(3−x) − WCy/CDs.

Stabilizing Lithiophilic Sites Via Bimetallic Oxide Heterointerfaces

AbstractDesigning metal oxide hosts with multiple lithophilic sites has emerged as a promising strategy to stabilize lithium (Li) metal anode for Li metal batteries (LMBs). Through lowering Li nucleation overpotentials, metal‐oxide‐derived lithiophilic frameworks can guide uniform Li deposition. However, lithiophilic sites suffer from failure upon cycling due to the structural collapse, limiting their durability for practical applications. Herein, a heterointerfacing strategy is reported to stabilize the alloy‐type lithiophilic sites of zinc. Nondurable zinc oxide is closely jointed with durable cobalt oxide, forming a unique bimetallic oxide heterointerface that possesses both favorable Li affinity and high structural integrity. The roles of individual components and the interface are both investigated. The heterostructured framework serves as a buffer layer at the anode/electrolyte interface, enabling stable regulation of Li plating and stripping. The as‐modified Li metal anode achieves high coulombic efficiency and long‐term stability in practical LMBs. This work sheds a light on designing durable lithiophilic hosts for LMBs under practical conditions.

Decoupling the conduction from redox reaction and electronic reconstruction at polar oxide interfaces

The physical properties of oxide heterointerfaces depend crucially on the electronic and ionic reconstructions across the interface. For the formation of a two-dimensional electron liquid (2DEL) at the interface of ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ (LAO/STO) systems, although it is well accepted that the conduction of amorphous-LAO/STO samples comes exclusively from the oxygen vacancies due to interfacial redox reactions, the relative contribution of ionic reconstruction and electronic reconstruction to the conduction at the polar crystalline LAO/STO interface has been a topic of debate. Herein, by resonant x-ray photoemission spectroscopy and x-ray absorption spectroscopy measurements, we investigated the evolution of the Ti $2p$ signal as well as the in-gap states at the diluted oxide interface of $\mathrm{La}{\mathrm{Al}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}{\mathrm{O}}_{3}/\mathrm{STO}$ $(0\ensuremath{\le}x\ensuremath{\le}0.3)$, where the doping of Mn into LAO gradually decreases the carrier density of the interfacial 2DEL but does not change the interface polarity. The spectroscopic results present direct evidence that the conduction from redox reaction at polar LAO/STO interfaces is suppressed by increasing the Mn doping level without the need of oxygen postannealing. A pure polarity discontinuity induced electronic reconstruction can be achieved by deliberately controlling the Mn doping level in LAO, which results in low-carrier, high-mobility, and spin-polarized 2DELs at $x=0.3$.

Revealing the Interaction of Charge Carrier-Phonon Coupling by Quantification of Electronic Properties at the SrTiO3/TiO2 Heterointerface.

Oxide heterointerfaces with high carrier density can interact strongly with the lattice phonons, generating considerable plasmon-phonon coupling and thereby perturbing the fascinating optical and electronic properties, such as two-dimensional electron gas, ferromagnetism, and superconductivity. Here we use infrared-spectroscopic nanoimaging based on scattering-type scanning near-field optical microscopy (s-SNOM) to quantify the interaction of electron-phonon coupling and the spatial distribution of local charge carriers at the SrTiO3/TiO2 interface. We found an increased high-frequency dielectric constant (ε∞ = 7.1-9.0) and charge carrier density (n = 6.5 × 1019 to 1.5 × 1020 cm-3) near the heterointerface. Moreover, quantitative information between the charge carrier density and extension thickness across the heterointerface has been extracted by monochromatic near-field imaging. A direct evaluation of the relationship between the thickness and the interaction of charge carrier-phonon coupling of the heterointerface would provide valuable information for the development of oxide-based electronic devices.

Incorporating metal Co into CoMoO4/Co2Mo3O8 heterointerfaces with rich-oxygen vacancies for efficient hydrogen evolution catalysis

• The CoMoO 4 /Co 2 Mo 3 O 8 with rich-oxygen vacancies (V o ) incorporated by Co nanoparticles is designed. • The Co@CoMoO 4 /Co 2 Mo 3 O 8 -V o is helpful for H* adsorption and interfacial electron transferring. • The vacancies can optimize the binding energy of intermediates on CoMoO 4 /Co 2 Mo 3 O 8 interfaces. • The Co@CoMoO 4 /Co 2 Mo 3 O 8 -V o shows excellent HER electrocatalytic performance. Realizing synergetic effect of multiple factors is critical to develop an optimal catalyst. Bimetallic oxides have shown great potential for catalytic hydrogen evolution from water splitting in alkaline media because their oxygen species are beneficial for water adsorption and can get unique d electron configurations to optimize the binding strength of intermediates. Here bimetallic oxide heterointerface CoMoO 4 /Co 2 Mo 3 O 8 with rich-oxygen vacancies (V o ) incorporated by the monodisperse small-size cobalt (Co) nanoparticles (Co@CoMoO 4 /Co 2 Mo 3 O 8 -V o ) is designed for hydrogen evolution reaction (HER) in alkaline media. The charge redistribution occurs at the CoMoO 4 /Co 2 Mo 3 O 8 interface because of incorporation of Co, and this will be helpful for H* adsorption and interfacial electron transferring. Meanwhile, the rich-oxygen vacancies can well optimize the binding energy of intermediate species on CoMoO 4 /Co 2 Mo 3 O 8 interface and thus will facilitate the sluggish HER in alkaline media. Because of the synergistic effects of metallic Co, CoMoO 4 /Co 2 Mo 3 O 8 interfaces and rich-oxygen vacancies, the Co@CoMoO 4 /Co 2 Mo 3 O 8 -V o catalyst shows superior electrocatalytic activity for HER in alkaline media with a low overpotential of 60 mV at 10 mA cm −2 , a small Tafel slop of 52 mV dec -1 , and excellent durability with ∼ 2% degradation after 24 h test. This work will provide a new strategy to enhance HER catalytic performance of bimetallic oxides in alkaline media.

Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition

Two-dimensional electron gases (2DEGs) localized at oxide heterointerfaces can potentially be used in applications associated with the design of novel electronic device architectures. Recent studies have reported that atomic layer deposition (ALD) of Al2O3 on TiO2 substrates can generate 2DEG states, owing to in situ formation of interfacial oxygen vacancies (VO). However, the chemical mechanism governing the adsorption of the trimethylaluminum (TMA) precursor on the TiO2 surface remains unclear. In this work, an investigation aimed at elucidating the formation of the 2DEG state through the reaction of TMA on TiO2 was performed using periodic dispersion-corrected DFT + U calculations. Dimethylether, whose desorption leaves VO surrounded by Ti3+, can be formed via direct methylation of the lattice oxygen on the TiO2 surface. The experimentally observed dependence of the carrier density on the process temperature of Al2O3 ALD confirmed the endothermic nature of VO formation. Furthermore, the emergence of geometrically confined n-type electronic states corresponding to interfacial VO confirmed the formation of 2DEGs at the heterointerface. Our study provides a fundamental understanding of 2DEG formation in the Al2O3/TiO2 heterojunction interface.

Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films.

Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.

Local polarization and valence distribution in LaNiO3 / LaMnO3 heterostructures

The inside of the electrical double layer at perovskite oxide heterointerfaces is examined. Here, we report the local polarization and valence distribution in LaNiO$_3$/LaMnO$_3$ and LaMnO$_3$/LaNiO$_3$ bilayers on a SrTiO$_3$ (001) substrate. Simultaneous measurements of two aspects of the structure are realized by using Bayesian inference based on resonant- and nonresonant-surface X-ray diffraction data. The results show that the average Mn valences are Mn$^{3.12+}$ and Mn$^{3.19+}$ for the two samples. The intensity of their local electric field is $\sim$1~GV/m and the direction of the field points from LaMnO$_3$ to LaNiO$_3$.

Two-dimensional carrier gas at complex oxide interfaces: Control of functionality

New functionalities and unexpected electronic structures can emerge in artificially engineered complex oxide heterointerfaces due to the coupling of multiple physical properties such as ferroelectricity, ferromagnetism, conductivity, charge transfer, etc. Here, we discuss heterointerfaces between perovskite oxides, SrTiO3, LaAlO3, and BaTiO3, as well as the rocksalt ferromagnetic semiconductor EuO. Combining theoretical analysis, experimental growth, and characterization techniques with atomic level resolution, we highlight some of these intriguing emergent interfacial phenomena. We consider several means of creating a two-dimensional carrier gas: through band offset engineering, polarization doping, and oxygen vacancy doping. In addition, we also discuss ways of manipulating these electron/hole gases and their potential applications in new electronic devices.

Electronic and Structural Transitions of LaAlO3 /SrTiO3 Heterostructure Driven by Polar Field-Assisted Oxygen Vacancy Formation at the Surface.

The origin of 2D electron gas (2DEG) at LaAlO3/SrTiO3 (LAO/STO) interfaces has remained highly controversial since its discovery. Various models are proposed, which include electronic reconstruction via surface‐to‐interface charge transfer and defect‐mediated doping involving cation intermixing or oxygen vacancy (V O) formation. It is shown that the polar field‐assisted V O formation at the LAO/STO surface plays critical roles in the 2DEG formation and concurrent structural transition. Comprehensive scanning transmission electron microscopy analyses, in conjunction with density functional theory calculations, demonstrate that V O forming at the LAO/STO surface above the critical thickness (t c) cancels the polar field by doping the interface with 2DEG. The antiferrodistortive (AFD) octahedral rotations in LAO, which are suppressed below the t c, evolve with the formation of V O above the t c. The present study reveals that local symmetry breaking and shallow donor behavior of V O induce the AFD rotations and relieve the electrical field by electron doping the oxide heterointerface.

Display of Spin-Orbit Coupling at ReAlO3/SrTiO3 (Re = La, Pr, Nd, Sm, and Gd) Heterointerfaces.

Complex oxide heterointerfaces provide a platform to manipulate spin-orbit coupling under the broken inversion symmetry. Moreover, their weak antilocalization (WAL) effect displays quantum coherent behavior due to the strong spin-orbit coupling. Herein, we break through the limitation of lattice mismatch at ReAlO3/STO (Re = La, Pr, Nd, Sm, and Gd) heterointerfaces and obtain their two-dimensional electric gas (2DEG) by spin coating. The effect of different Re elements in the resulting quantum corrections on the conductivity is investigated. It is observed that the conductivity of heterointerfaces is reduced with larger atomic numbers due to the ionization potential of Re elements. Moreover, magnetoresistance (MR) measurements in a perpendicular or a parallel field distinctly uncover strong Rashba spin-orbit coupling (SOC) in ReAO/STO samples besides SAO/STO (Re = Sm) and GAO/STO (Re = Gd), and the effective fields of the SOC (Hso) gradually increase from LAO/STO (Re = La, Hso = 0.82 T) to NAO/STO (Re = Nd, Hso = 1.37 T) at 2 K. The competition between SOC scattering and inelastic scattering is revealed through a temperature-dependence study of MR, and the WAL-weak localization transition is at about 6 K. Furthermore, unambiguous results of the Kondo effect, nonlinear Hall, hysteresis loop, and Rashba SOC suggest the coexistence of WAL at the PAO/STO (Re = Pr) heterointerface with exchange coupling between the localized magnetic moment and the itinerant electron. These results pave a unique route for the exploration of spin-polarized 2DEGs at oxide heterointerfaces.

Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer

The d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO3/LaTiO3 heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO3 to LaCoO3. This triggers destabilisation of the CoO6 octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO3. Tuned by the thickness of LaTiO3, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.

Analysis of Local Charges at Hetero-interfaces by Electron Holography – A Comparative Study of Different Techniques

Interface charges confined within a few nanometers of hetero-interface can be characterized by measuring the phase shift of the transmitted beam using different electron holography techniques. However, reliable measurement of the electrostatic potential arising from the interface charges is challenging as the mean inner potential difference (ΔV0) between two adjoining materials as well as local variation of the sample thickness affect the phase shift. In the present study, we show how electron holography can be used to characterize the confined charges at an oxide hetero-interface and evaluate the applicability of different techniques for this purpose. The model system chosen for this study is a LaAlO3/SrTiO3 (LAO/STO) (111) hetero-interface featuring a two-dimensional electron gas (2DEG), where the ΔV0 between LAO and STO is about 2 eV, which is unignorably large and dominates the net potential variation across the interface. For transmission electron microscopy specimens prepared by focused ion beam we applied three different variants of electron holography techniques: off-axis, inline and hybrid electron holography; and compare the results obtained by these approaches in terms of the information transfer in the spatial frequency domain, and the signal-to-noise ratio of the electric field and charge density maps. To correctly assess the information pertinent to the interface-confined charges, we calculate the electrostatic potential and electric field distribution based on a charge model with taking account of the ΔV0 between LAO and STO and compared the calculated profiles with the experimental results after calibrating the local thickness variation across the LAO/STO interface. The results show that hybrid electron holography recovers the information across a wide range of spatial frequencies, and as a result, delivers the most reliable charge density information, albeit convoluted with the unavoidable effects arising from ΔV0.

Recent Advances on Spin-Polarized Two-Dimensional Electron Gases at Oxide Interfaces

Two-dimensional electron gases (2DEGs) at oxide heterointerfaces show a plethora of intriguing properties and functionality, which has been the focus of intense study in recent years. Rashba spin–orbit coupling stemming from the symmetry breaking supplies the oxide interfaces with a versatile handle to generate, transport, detect, and convert spin current. This review provides a summary of the recent advances on the 2DEGs at oxide interfaces for spintronic applications, mainly focusing on spin-polarized 2DEGs, spin generation and detection, spin-to-charge interconversion, and spin transport of 2DEGs. All of these intriguing properties not only show great promise for the 2DEGs at oxide interfaces in all-oxide spintronics devices but also expand the boundaries of our understanding of this profound cutting-edge field.

Charge Transfer: Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces (Adv. Mater. 4/2021)

Charge Transfer: Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces (Adv. Mater. 4/2021)