Oxide-free Si Research Articles

Controlling the reproducibility of Coulomb blockade phenomena for gold nanoparticles on an organic monolayer/silicon system

Two types of highly ordered organic layers were prepared on silicon modified with an amine termination for binding gold nanoparticles (AuNPs). These two grafted organic monolayers (GOMs), consisting of alkyl chains with seven or 11 carbon atoms, were grafted on oxide-free Si(111) surfaces as tunnel barriers between the silicon electrode and the AuNPs. Three kinds of colloidal AuNPs were prepared by reducing HAuCl4 with three different reactants: citrate (Turkevich synthesis, diameter ∼16 nm), ascorbic acid (diameter ∼9 nm), or NaBH4 (Natan synthesis, diameter ∼7 nm). Scanning tunnel spectroscopy (STS) was performed in a UHV STM at 40 K, and Coulomb blockade behaviour was observed. The reproducibility of the Coulomb behavior was analysed as a function of several chemical and physical parameters: size, crystallinity of the AuNPs, influence of surrounding surfactant molecules, and quality of the GOM/Si interface (degree of oxidation after the full processing). Samples were characterized with scanning tunneling microscope, STS, atomic force microscope, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), and high resolution transmission electronic microscope. We show that the reproducibility in observing Coulomb behavior can be as high as ∼80% with the Natan synthesis of AuNPs and GOMs with short alkyl chains.

Micropatterned ferrocenyl monolayers covalently bound to hydrogen-terminated silicon surfaces: effects of pattern size on the cyclic voltammetry and capacitance characteristics.

The effect of the size of patterns of micropatterned ferrocene (Fc)-functionalized, oxide-free n-type Si(111) surfaces was systematically investigated by electrochemical methods. Microcontact printing with amine-functionalized Fc derivatives was performed on a homogeneous acid fluoride-terminated alkenyl monolayer covalently bound to n-type H-terminated Si surfaces to give Fc patterns of different sizes (5 × 5, 10 × 10, and 20 × 20 μm(2)), followed by backfilling with n-butylamine. These Fc-micropatterned surfaces were characterized by static water contact angle measurements, ellipsometry, X-ray photoelectron spectroscopy (XPS), infrared reflection-absorption spectroscopy (IRRAS), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The charge-transfer process between the Fc-micropatterned and underlying Si interface was subsequently studied by cyclic voltammetry and capacitance. By electrochemical studies, it is evident that the smallest electroactive ferrocenyl patterns (i.e., 5 × 5 μm(2) squares) show ideal surface electrochemistry, which is characterized by narrow, perfectly symmetric, and intense cyclic voltammetry and capacitance peaks. In this respect, strategies are briefly discussed to further improve the development of photoswitchable charge storage microcells using the produced redox-active monolayers.

Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface

The interface level alignment of alkyl and alkenyl monolayers, covalently bound to oxide-free Si substrates of various doping levels, is studied using X-ray photoelectron spectroscopy. Using shifts in the C 1s and Si 2p photoelectron peaks as a sensitive probe, we find that charge distribution around the covalent Si–C bond dipole changes according to the initial position of the Fermi level within the Si substrate. This shows that the interface dipole is not fixed but rather changes with the doping level. These results set limits to the applicability of simple models to describe level alignment at interfaces and show that the interface bond and dipole may change according to the electrostatic potential at the interface.

Effect of Molecule–Surface Reaction Mechanism on the Electronic Characteristics and Photovoltaic Performance of Molecularly Modified Si

We report on the passivation properties of molecularly modified, oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated Si(111) surface can follow two possible paths, nucleophilic substitution (SN) and radical chain reaction (RCR), depending on adsorption conditions. Moderate heating leads to the SN reaction, whereas with UV irradiation RCR dominates, with SN as a secondary path. We show that the site-sensitive SN reaction leads to better electrical passivation, as indicated by smaller surface band bending and a longer lifetime of minority carriers. However, the surface-insensitive RCR reaction leads to more dense monolayers and, therefore, to much better chemical stability, with lasting protection of the Si surface against oxidation. Thus, our study reveals an inherent dissonance between electrical and chemical passivation. Alkoxy monolayers, formed under UV irradiation, benefit, though, from both chemical and electronic passivation because under these conditions both SN and RCR occur. This is reflected in longer minority carrier lifetimes, lower reverse currents in the dark, and improved photovoltaic performance, over what is obtained if only one of the mechanisms operates. These results show how chemical kinetics and reaction paths impact electronic properties at the device level. It further suggests an approach for effective passivation of other semiconductors.

Fabrication of Octadecyl and Octadecanethiolate Self-Assembled Monolayers on Oxide-Free Si(111) with a One-Cell Process

Self-assembled monolayers (SAM) of 1-octadecene (ODE) and 1-octadecanethiol (ODT) were deposited on an oxide-free Si(111) surface with a one-cell method. The etching and SAM deposition of Si(111) were performed in one cell containing immiscible solutions in two layers: an aqueous solution of NH4F and a toluene solution of organic SAM precursors (ODE and ODT). To remove surface Si oxides, the Si(111) surface was initially etched in the lower layer of NH4F solution. The Si as etched was subsequently moved directly to the upper solution of the precursors for deposition of the SAM under illumination of white light. This one-cell approach avoids the Si surface, as etched, coming in contact with the atmosphere, so eliminating oxidation and contamination. The ODE and ODT SAM were characterized with measurements with an atomic force microscope (AFM) and X-ray photoelectron spectra (XPS). The resulting ODE SAM was more stable than the ODT SAM and exhibited satisfactory resistance to oxidation under the ambient atmosphere. The ODT SAM prepared with this one-cell method exhibited a resistance to atmospheric oxidation better than with a two-cell method.

A Non-Oxidative Approach Towards Hybrid Silicon Nanowire- Based Solar Cell Heterojunctions

AbstractA general method for the non-oxidative termination of silicon nanowires (Si NWs) is reviewed. Oxide-free Si NW have been successfully alkylated in the lab using a two-step chlorination/alkylation process. The distinctive properties of the resulting Si NW have been taken advantage of by integrating the Si NWs into functional devices such as solar cells. Moreover, molecularly terminated Si NWs exhibit lower defect density emissions than unmodified Si NWs. This, in part, explains the better performance of the molecularly terminated Si NW-based solar cells. Solar cells that use organic-inorganic hybrid Si NWs as absorbers show an increased open-circuit voltage (V

Structure–Properties Correlation in Si Nanoparticles by Total Scattering and Computer Simulations

High-energy synchrotron X-ray diffraction coupled to atomic pair distribution function analysis and computer simulations is used to determine the atomic-scale structure of silicon (Si) nanoparticles obtained by two different synthetic routes. Results show that Si nanoparticles may have significant structural differences depending on the synthesis route and surface chemistry. In this case, one method produced Si nanoparticles that are highly crystalline but surface oxidized, whereas a different method yields organic ligand-passivated nanoparticles without surface oxide but that are structurally distorted at the atomic scale. Particular structural features of the oxide-free Si nanoparticles such as average first coordination numbers, length of structural coherence, and degree of local distortions are compared to their optical properties such as photoluminescence emission energy, quantum yield, and Raman spectra. A clear structure–properties correlation is observed indicating that the former may need to be taken into account when considering the latter.

Stable Organic Monolayers on Oxide-Free Silicon/Germanium in a Supercritical Medium: A New Route to Molecular Electronics.

Oxide-free Si and Ge surfaces have been passivated and modified with organic molecules by forming covalent bonds between the surfaces and reactive end groups of linear alkanes and aromatic species using single-step deposition in supercritical carbon dioxide (SCCO2). The process is suitable for large-scale manufacturing due to short processing times, simplicity, and high resistance to oxidation. It also allows the formation of monolayers with varying reactive terminal groups, thus enabling formation of nanostructures engineered at the molecular level. Ballistic electron emission microscopy (BEEM) spectra performed on the organic monolayer on oxide-free silicon capped by a thin gold layer reveals for the first time an increase in transmission of the ballistic current through the interface of up to three times compared to a control device, in contrast to similar studies reported in the literature suggestive of oxide-free passivation in SCCO2. The SCCO2 process combined with the preliminary BEEM results opens up new avenues for interface engineering, leading to molecular electronic devices.

Efficient Functionalization of Oxide-Free Silicon(111) Surfaces: Thiol–yne versus Thiol–ene Click Chemistry

Thiol-yne click (TYC) chemistry was utilized as a copper-free click reaction for the modification of alkyne-terminated monolayers on oxide-free Si(111) surfaces, and the results were compared with the analogous thiol-ene click (TEC) chemistry. A wide range of thiols such as 9-fluorenylmethoxy-carbonyl cysteine, thio-β-d-glucose tetraacetate, thioacetic acid, thioglycerol, thioglycolic acid, and 1H,1H,2H,2H-perfluorodecanethiol was immobilized using TYC under photochemical conditions, and all modified surfaces were characterized by static water contact angle measurements, X-ray photoelectron spectroscopy (including a simulation thereof by density functional calculations), and infrared absorption reflection spectroscopy. Surface-bound TYC proceeds with an efficiency of up to 1.5 thiols per alkyne group. This high surface coverage proceeds without oxidizing the Si surface. TYC yielded consistently higher surface coverages than TEC, due to double addition of thiols to alkyne-terminated monolayers. This also allows for the sequential and highly efficient attachment of two different thiols onto an alkyne-terminated monolayer.

Control growth of silicon nanocolumns’ epitaxy on silicon nanowires

The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius*21 ± 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocol- umns' decorated SiNW arrays are discussed in the text.

Mono-Fluorinated Alkyne-Derived SAMs on Oxide-Free Si(111) Surfaces: Preparation, Characterization and Tuning of the Si Workfunction

Organic monolayers derived from ω-fluoro-1-alkynes of varying carbon chain lengths (C(10)-C(18)) were prepared on Si(111) surfaces, resulting in changes of the physical and electronic properties of the surface. Analysis of the monolayers using XPS, Infrared Reflection Absorption Spectroscopy, ellipsometry and static water contact angle measurements provided information regarding the monolayer thickness, the tilt angle, and the surface coverage. Additionally, PCFF molecular mechanics studies were used to obtain information on the optimal packing density and the layer thickness, which were compared to the experimentally found data. From the results, it can be concluded that the monolayers derived from longer chain lengths are more ordered, possess a lower tilt angle, and have a higher surface coverage than monolayers derived from shorter chains. We also demonstrate that by substitution of an H by F atom in the terminal group, it is possible to controllably modify the surface potential and energy barrier for charge transport in a full metal/monolayer-semiconductor (MOMS) junction.

Controlled, Low-Coverage Metal Oxide Activation of Silicon for Organic Functionalization: Unraveling the Phosphonate Bond

Deposition of thin films and grafting of organic molecules on semiconductor surfaces, particularly oxide surfaces, are widely studied as means of passivation and functionalization for a variety of applications. However, organic functionalization of silicon oxide is challenging, as the currently used molecules (silanes and phosphonates) do not form layers that are stable in aqueous environments and present challenges during the grafting process. For instance, the chemical grafting of phosphonates requires high temperature (140 °C) to perform. Modification of SiO(2) surfaces with metal oxides is an attractive alternative since strong bonds can be established between metal oxides and relevant molecules (silanes, phosphonates). While such modification is possible using vapor-phase methods, such as atomic layer deposition and physical vapor-phase deposition, wet chemical processing is inexpensive and technologically very attractive. We describe here a simple wet chemical method to deposit an ultrathin layer of metal oxide/hydroxide groups. Further, using a model surface with exactly one-third monolayer OH groups on oxide-free Si surfaces, the precise adsorption geometry on single Al(OH)(3) groups is shown to be bidentate, and the distance between the Al and P atoms is determined to be the main influencing parameter for a thermodynamically stable formation of the Al-O-P bond.

Controlling Space Charge of Oxide-Free Si by in Situ Modification of Dipolar Alkyl Monolayers

Good passivation of Si, both electrically and chemically, is achieved by monolayers of 1,9-decadiene, directly bound to an oxide-free Si surface. The terminal C═C bond of the decadiene serves for further in situ reaction, without harming the surface passivation, to −OH- or −Br-terminated monolayers that have different dipole moments. Such a two-step procedure meets the conflicting requirements of binding mutually repelling dipolar groups to a surface, while chemically blocking all surface reactive sites. We demonstrate a change of 0.15 eV in the Si surface potential, which translates into a 0.4 eV variation in the Schottky barrier height of a Hg junction to those molecularly modified n-Si surfaces. Charge transport across such junctions is controlled both by tunneling across the molecular monolayer and by the Si space charge. For reliable insight into transport details, we resorted to detailed numerical simulations, which reveal that the Si space charge and the molecular tunneling barriers are coupled. As a result, attenuation due to the molecular tunneling is much weaker than in metal/molecule/metal molecular junctions. Simulation shows also that some interface states are present but that they have a negligible effect on Fermi level pinning. These states are efficiently decoupled from the metal (Hg) and interact mostly with the Si.

Hybrids of Organic Molecules and Flat, Oxide-Free Silicon: High-Density Monolayers, Electronic Properties, and Functionalization

Since the first report of Si-C bound organic monolayers on oxide-free Si almost two decades ago, a substantial amount of research has focused on studying the fundamental mechanical and electronic properties of these Si/molecule surfaces and interfaces. This feature article covers three closely related topics, including recent advances in achieving high-density organic monolayers (i.e., atomic coverage >55%) on oxide-free Si(111) substrates, an overview of progress in the fundamental understanding of the energetics and electronic properties of hybrid Si/molecule systems, and a brief summary of recent examples of subsequent functionalization on these high-density monolayers, which can significantly expand the range of applicability. Taken together, these topics provide an overview of the present status of this active area of research.

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100) in hydroquinone (HQ)/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a) Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b) HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

Multiredox Tetrathiafulvalene-Modified Oxide-Free Hydrogen-Terminated Si(100) Surfaces

Tetrathiafulvalene (TTF) monolayers covalently bound to oxide-free hydrogen-terminated Si(100) surfaces have been prepared from the hydrosilylation reaction involving a TTF-terminated ethyne derivative. FTIR spectroscopy characterization using similarly modified porous Si(100) substrates revealed the presence of vibration bands assigned to the immobilized TTF rings and the Si-C═C- interfacial bonds. Cyclic voltammetry measurements showed the presence of two reversible one-electron systems ascribed to TTF/TTF(.+) and TTF(.+)/TTF(2+) redox couples at ca. 0.40 and 0.75 V vs SCE, respectively, which compare well with the values determined for the electroactive molecule in solution. The amount of immobilized TTF units could be varied in the range from 1.7 × 10(-10) to 5.2 × 10(-10) mol cm(-2) by diluting the TTF-terminated chains with inert n-decenyl chains. The highest coverage obtained for the single-component monolayer is consistent with a densely packed TTF monolayer.

Structure Matters: Correlating temperature dependent electrical transport through alkyl monolayers with vibrational and photoelectron spectroscopies

Freezing out of molecular motion and increased molecular tilt enhance the efficiency of electron transport through alkyl chain monolayers that are directly chemically bound to oxide-free Si. As a result, the current across such monolayers increases as the temperature decreases from room temperature to ∼80 K, i.e., opposite to thermally activated transport such as hopping or semiconductor transport. The 30-fold change for transport through an 18-carbon long alkyl monolayer is several times the resistance change for actual metals over this range. FTIR vibrational spectroscopic measurements indicate that cooling increases the packing density and reduces the motional freedom of the alkyl chains by first stretching the chains and then gradually tilting the adsorbed molecules away from the surface normal. Ultraviolet photoelectron spectroscopy shows drastic sharpening of the valence band structure as the temperature decreases, which we ascribe to decreased electron–phonon coupling. Although conformational changes are typical in soft molecular systems, in molecular electronics they are rarely observed experimentally or considered theoretically. Our findings, though, indicate that the molecular conformational changes are a prominent feature, which imply behavior that differs qualitatively from that described by models of electronic transport through inorganic mesoscopic solids.

Si–C-bound alkyl chains on oxide-free Si: towards versatile solution preparation of electronic transport quality monolayers

We show that electronic transport quality alkyl chain mono-layers can be prepared from dilute solution, rather than from neat alkanes, and on Si (100) instead of (111) surfaces. High monolayer quality was deduced from XPS and from comparing current-voltage curves of Hg/alkyl/Si junctions with those for junctions with monolayers made from neat alkanes. XPS shows that limited surface oxidation does not harm the integrity of the monolayer. Solution preparation significantly widens the range of molecules that can be used for transport studies.

Functional monolayers on oxide-free silicon surfaces via thiol–ene click chemistry

Thiol-ene click chemistry was used for the attachment of a variety of functional molecules onto oxide-free Si(111) surfaces using very mild conditions; the efficient nature of this coupling strategy allowed for successful light-induced micropatterning and thus provides a novel route towards biofunctional electronics.

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

The uncontrolled formation of an interfacial layer between high-κ oxides and semiconductors is a major concern in advanced microelectronics not only for Si-based devices but also for those exploiting the higher mobility of Ge and GaAs. Using transmission electron microscopy, the authors investigate the interfacial layer formed between as-grown thin Al2O3 films, deposited using atomic layer deposition, and oxide free Si(100), Ge(100), and GaAs(100). In particular, they compare the effects of two different oxygen sources (H2O and O3) on interfacial layer formation during the growth process. They show that no interfacial layer can be distinguished unambiguously between the Al2O3 films, grown using TMA and H2O or O3, and all the semiconductor substrates.