Oxide-coated Silicon Substrates Research Articles

Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors

Direct synthesis of thin-film carbon nanomaterials on oxide-coated silicon substrates provides a viable pathway for building a dense array of miniaturized (micron-scale) electrochemical sensors with high performance. However, material synthesis generally involves many parameters, making material engineering based on trial and error highly inefficient. Here, we report a two-pronged strategy for producing engineered thin-film carbon nanomaterials that have a nano-graphitic structure. First, we introduce a variant of the metal-induced graphitization technique that generates micron-scale islands of nano-graphitic carbon materials directly on oxide-coated silicon substrates. A novel feature of our material synthesis is that, through substrate engineering, the orientation of graphitic planes within the film aligns preferentially with the silicon substrate. This feature allows us to use the Raman spectroscopy for quantifying structural properties of the sensor surface, where the electrochemical processes occur. Second, we find phenomenological models for predicting the amplitudes of the redox current and the sensor capacitance from the material structure, quantified by Raman. Our results indicate that the key to achieving high-performance micro-sensors from nano-graphitic carbon is to increase both the density of point defects and the size of the graphitic crystallites. Our study offers a viable strategy for building planar electrochemical micro-sensors with high-performance.

Photo-control of poly(N-[4-[(4-Nitrophenyl)azo]phenyl]acrylamide) brushes on graphene oxide coated silicon surface

Poly(N-[4-[(4-Nitrophenyl)azo]phenyl]acrylamide [poly(NPAPAA)] brushes were obtained via interface-mediated reversible addition–fragmentation chain transfer polymerization to design new photoresponsive surface on the graphene oxide coated silicon substrate. Switchable surface wettability was controlled successfully by these densely packed polymer brushes using light as the exterior stimulation. The relatively nonpolar trans azobenzene polymer brushes were converted to a polar cis form (with a larger dipole moment) utilizing light of the suitable wavelength. This conversion is reversible and can be switched back by employing visible light. Cis–trans photo-induced isomerization provided a reversible contact angle change (~ 9o) with UV and visible light for the poly(NPAPAA) brushes under successive irradiation cycles. This study may be promised to control cell culture surface without leaving any residual in terms of alternative medicine.

In Situ Nanoscale Characterization of Water Penetration through Plasma Polymerized Coatings.

The search continues for means of making quick determinations of the efficacy of a coating for protecting a metal surface against corrosion. One means of reducing the time scale needed to differentiate the performance of different coatings is to draw from nanoscale measurements inferences about macroscopic behavior. Here we connect observations of the penetration of water into plasma polymerized (PP) protective coatings and the character of the interface between the coating and an oxide-coated aluminum substrate or model oxide-coated silicon substrate to the macroscopically observable corrosion for those systems. A plasma polymerized film from hexamethyldisiloxane (HMDSO) monomer is taken as illustrative of a hydrophobic coating, while a PP film from maleic anhydride (MA) is used as a characteristically hydrophilic coating. The neutron reflectivity (NR) of films on silicon oxide coated substrates shows that water moves more readily through the hydrophilic PP-MA film. Off-specular X-ray scattering indicates the PP-MA film on aluminum is less conformal with the substrate than is the PP-HMDSO film. Measurements with infrared-visible sum frequency generation spectroscopy (SFG), which probes the chemical nature of the interface, make clear that the chemical interactions between coating and aluminum oxide are disrupted by interfacial water. With this water penetration and interface disruption, macroscopic corrosion can occur much more rapidly. An Al panel coated with PP-MA corrodes after 1 day in salt spray, while a similarly thin (∼30 nm) PP-HMDSO coating protects an Al panel for a period on the order of one month.

Capillary Force Lithography Pattern-Directed Self-Assembly (CFL-PDSA) of Phase-Separating Polymer Blend Thin Films.

We report capillary force lithography pattern-directed self-assembly (CFL-PDSA), a facile technique for patterning immiscible polymer blend films of polystyrene (PS)/poly(methyl methacrylate) (PMMA), resulting in a highly ordered phase-separated morphology. The pattern replication is achieved by capillary force lithography (CFL), by annealing the film beyond the glass transition temperature of both the constituent polymers, while confining it between a patterned cross-linked poly(dimethyl siloxane) (PDMS) stamp and the silicon substrate. As the pattern replication takes place because of rise of the polymer meniscus along the confining stamp walls, higher affinity of PMMA toward the oxide-coated silicon substrate and of PS toward cross-linked PDMS leads to well-controlled vertically patterned phase separation of the two constituent polymers during thermal annealing. Although a perfect negative replica of the stamp pattern is obtained in all cases, the phase-separated morphology of the films under pattern confinement is strongly influenced by the blend composition and annealing time. The phase-separated domains coarsen with time because of migration of the two components into specific areas, PS into an elevated mesa region and PMMA toward the substrate, because of preferential wetting. We show that a well-controlled, phase-separated morphology is achieved when the blend ratio matches the volume ratio of the elevated region to the base region in the patterned films. The proposed top-down imprint patterning of blends can be easily made roll-to-roll-compatible for industrial adoption.

Broad range tuning of structural and optical properties of ZnxMg1−xO nanostructures grown by vapor transport method

One-dimensional (1D) ZnxMg1−xO nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results.

Effect of graphene oxide ratio on the cell adhesion and growth behavior on a graphene oxide-coated silicon substrate.

Control of living cells on biocompatible materials or on modified substrates is important for the development of bio-applications, including biosensors and implant biomaterials. The topography and hydrophobicity of substrates highly affect cell adhesion, growth, and cell growth kinetics, which is of great importance in bio-applications. Herein, we investigate the adhesion, growth, and morphology of cultured breast cancer cells on a silicon substrate, on which graphene oxides (GO) was partially formed. By minimizing the size and amount of the GO-containing solution and the further annealing process, GO-coated Si samples were prepared which partially covered the Si substrates. The coverage of GO on Si samples decreases upon annealing. The behaviors of cells cultured on two samples have been observed, i.e. partially GO-coated Si (P-GO) and annealed partially GO-coated Si (Annealed p-GO), with a different coverage of GO. Indeed, the spreading area covered by the cells and the number of cells for a given culture period in the incubator were highly dependent on the hydrophobicity and the presence of oxygenated groups on GO and Si substrates, suggesting hydrophobicity-driven cell growth. Thus, the presented method can be used to control the cell growth via an appropriate surface modification.

Surface blistering of low temperature annealed hydrogen and helium co-implanted germanium and its application to splitting of bonded wafer substrates

Applications involving transfer of germanium layers to silicon-based substrates often require a process involving a restricted thermal budget. The use of relatively low temperatures has a major advantage in reducing stresses when thermal splitting of implanted germanium wafers bonded to silicon-based substrates is used to create germanium-on-oxide (GeOI) layers. The present study investigates the phenomenon of blistering of hydrogen and helium co-implanted germanium over the temperature range 250–400 °C, optical microscopy being used to detect the initial appearance of the blisters. Results showed that plots of Ln(time) vs. blister initiation temperature consisted of several straight-line regions yielding an activation energy for each region. The plots showed similarities to those observed in previous work with silicon co-implanted and annealed under similar conditions. At temperatures below the blister initiation temperature, transmission electron microscopy (TEM), revealed the presence of spherical bubbles at a depth below the surface estimated to be approximately that of the hydrogen implant projected range. GeOI layers were produced by thermal splitting of co-implanted germanium wafers bonded to oxide-coated silicon substrates wafers at a temperature of 300 °C. The RMS roughness of the split germanium surface measured by atomic force microscopy (AFM) was about 11 nm averaged over the wafer surface. In addition there were isolated and randomly distributed regions of 27 nm roughness covering about 20% of the total surface area of the wafer.

Origin of complex impact craters on native oxide coated silicon surfaces

Crater structures induced by impact of keV-energy ${\mathrm{Ar}}_{n}^{+}$ cluster ions on silicon surfaces are measured with atomic force microscopy. Complex crater structures consisting of a central hillock and outer rim are observed more often on targets covered with a native silicon oxide layer than on targets without the oxide layer. To explain the formation of these complex crater structures, classical molecular dynamics simulations of Ar cluster impacts on oxide coated silicon surfaces, as well as on bulk amorphous silica, amorphous Si, and crystalline Si substrates, are carried out. The diameter of the simulated hillock structures in the silicon oxide layer is in agreement with the experimental results, but the simulations cannot directly explain the height of hillocks and the outer rim structures when the oxide coated silicon substrate is free of defects. However, in simulations of $5\phantom{\rule{0.3em}{0ex}}\mathrm{keV}$/atom ${\mathrm{Ar}}_{12}$ cluster impacts, transient displacements of the amorphous silicon or silicon oxide substrate surfaces are induced in an approximately $50\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ wide area surrounding the impact point. In silicon oxide, the transient displacements induce small topographical changes on the surface in the vicinity of the central hillock. The comparison of cluster stopping mechanisms in the various silicon oxide and silicon structures shows that the largest lateral momentum is induced in the silicon oxide layer during the impact; thus, the transient displacements on the surface are stronger than in the other substrates. This can be a reason for the higher frequency of occurrence of the complex craters on oxide coated silicon.

Nanometer scale electrode separation (nanogap) using electromigration at room temperature

Pairs of electrodes with nanometer separation (nanogap) are achieved through an electromigration-induced break-junction (EIBJ) technique at room temperature. Lithographically defined gold (Au) wires are formed by e-beam evaporation over oxide-coated silicon substrates silanized with (3-Mercaptopropyl)trimethoxysilane (MPTMS) and then subjected to electromigration at room temperature to create a nanometer scale gap between the two newly formed Au electrodes. The MPTMS is an efficient adhesive monolayer between SiO/sub 2/ and Au. Although the Au wires are initially 2 /spl mu/m wide, gaps with length /spl sim/1 nm and width /spl sim/5 nm are observed after breaking and imaging through a field effect scanning electron microscope. This technique eliminates the presence of any residual metal interlink in the adhesion layer (chromium or titanium for Au deposition over SiO/sub 2/) after breaking the gold wire, and it is much easier to implement than the commonly used low-temperature EIBJ technique which needs to be executed at 4.2 K. Metal-molecule-metal structures with symmetrical metal-molecule contacts at both ends of the molecule are fabricated by forming a self-assembled monolayer of -dithiol molecules between the EIBJ-created Au electrodes with nanometer separation. Electrical conduction through single molecules of 1,4-Benzenedimethanethiol (XYL) is tested using the Au/XYL/Au structure with chemisorbed gold-sulfur coupling at both contacts.

Large-grain (>1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III–V solar cell applications

Recrystallized germanium films on ceramics and other materials can serve as a low-cost replacement for the single-crystal germanium wafers currently used for high-efficiency III–V semiconductor solar cells. Related work implies that Ge films with large-grain sizes (>1 mm) formed on thermal-expansion matched substrates, such as sintered alumina ceramic, would function as suitable alternative substrates for epitaxy of high-performance GaAs-based solar cells. For this purpose, we describe a process wherein Ge layers, 0.5–5 μm thick, are deposited by close-spaced vapor transport or sputtering on sintered alumina ceramics, fused silica, or thermally oxidized polysilicon substrates, capped with metal layers deposited by electron-beam evaporation, and recrystallized in an annealing step. Post-growth, the metal cap is stripped with a selective liquid etchant. Recrystallized Ge films have large (1–5 mm) grains and highly oriented textures. These structures provide suitable substrates for epitaxy of GaAs solar cells.

Some Fundamental Aspects of the Thin Film Organization and Device – Structure Fabrication of Polydiacetylenes

ABSTRACTThe utility of the Shear method in obtaining thin single crystal films of polydiacetylenes has been demonstrated previously. In this paper the principles of the Shear method are elucidated with analogy to the well-known L-B method. Both the methods, L-B and Shear, utilize the polar molecular interactions with the substrates as a control parameter for the molecular organization. The major difference between the two is that one (L-B) utilizes a liquid as the subphase while the other (Shear) uses solid substrates. Because of the nature of the interface the L-B approach leads to only one-dimensional organization and poor optical quality for the films while the Shear method provides 3-D organization and excellent optical quality.Thin single crystal films of a specific polydiacetylene, PTS, are prepared on oxide coated silicon substrates by the Shear method. Waveguiding through the PTS films is demonstrated for the first time. Much progress is also made in the waveguide-structural fabrication of PTS films. The results are quite encouraging in terms of device applications of polydiacetylenes as optical switches and logic gates.