Nanometer scale electrode separation (nanogap) using electromigration at room temperature

Abstract

Pairs of electrodes with nanometer separation (nanogap) are achieved through an electromigration-induced break-junction (EIBJ) technique at room temperature. Lithographically defined gold (Au) wires are formed by e-beam evaporation over oxide-coated silicon substrates silanized with (3-Mercaptopropyl)trimethoxysilane (MPTMS) and then subjected to electromigration at room temperature to create a nanometer scale gap between the two newly formed Au electrodes. The MPTMS is an efficient adhesive monolayer between SiO/sub 2/ and Au. Although the Au wires are initially 2 /spl mu/m wide, gaps with length /spl sim/1 nm and width /spl sim/5 nm are observed after breaking and imaging through a field effect scanning electron microscope. This technique eliminates the presence of any residual metal interlink in the adhesion layer (chromium or titanium for Au deposition over SiO/sub 2/) after breaking the gold wire, and it is much easier to implement than the commonly used low-temperature EIBJ technique which needs to be executed at 4.2 K. Metal-molecule-metal structures with symmetrical metal-molecule contacts at both ends of the molecule are fabricated by forming a self-assembled monolayer of -dithiol molecules between the EIBJ-created Au electrodes with nanometer separation. Electrical conduction through single molecules of 1,4-Benzenedimethanethiol (XYL) is tested using the Au/XYL/Au structure with chemisorbed gold-sulfur coupling at both contacts.