Synchrotron and HeI radiation were used to study the chemical shifts and valence band structural changes on the GaSb and InP (110) surfaces during the initial stages of oxidation. Chemical shifts indicating anion and cation oxide formation were observed for both GaSb and InP, even when unexcited oxygen was used. The valence band spectra were very sensitive to small amounts of oxygen, and it was possible to identify some oxygen-induced structures as being characteristic of anion or cation oxide. Extinction of surface excitons was also observed at low oxygen exposures.