Output Power Pout Research Articles

Design of a Series of Inverse Continuous Modes Power Amplifier Based on Bandpass Filter

ABSTRACTIn this paper, a broadband high‐efficiency power amplifier (PA) with filtering characteristics is proposed. This PA is designed using a series of inverse continuous modes (SICMs) and adds a novel coupled microstrip line filter structure. The terminal of this structure is composed of microstrip lines cascaded to improve the out‐of‐band suppression effect. This filter can achieve low in‐band insertion loss, high passband selectivity, as well as deep stopband rejection performance simultaneously. A PA was designed and implemented using a 10 W GaN HEMT device, verifying its wideband characteristics. The measurement result shows that the 39.6–41.6 dBm output power (Pout), 61.6%–73.7% drain efficiency (DE), and 8.6–10.8 dB gain are achieved at 2.2–2.9 GHz.

A High Efficiency Broadband Gallium Nitride Power Amplifier with Harmonic Control technology

ABSTRACT In order to meet the requirements of high efficiency and broadband for the wireless communication system, a high efficiency and broadband gallium nitride power amplifier (PA) is designed and verified. Using the step-matching structure, its bandwidth has been improved. Furthermore, its input matching network is constructed by connecting several microband lines serially to reduce the matching Q value. Meanwhile, the harmonic control network is designed as the output matching network, which is built by a quarter-wave (λ/4) line open circuit and short circuit microwave lines in parallel. Thus, its drain efficiency (DE)can be improved. This design is simulated and tested at 2.2–3 GHz with the gallium nitride (GaN) process. After measuring, it attains an output power (Pout) of 39.5–41.5 dBm, Gain of 10.5–12.5 dB, DE of 65.1%–78.3% with power added efficiency (PAE) of 64.8%–76.2%.

Enhancing the Performance of Photovoltaic Solar Cells using a Hybrid Cooling Technique of Thermoelectric Generator and Heat Sink

Abstract This study aims to enhance the performance of photovoltaic (PV) solar cells by employing a hybrid cooling technique involving a thermoelectric generator (TEG) and heat sink. Three configuration modules are investigated both experimentally and numerically: module 01: PV only (PV), module 02: PV with TEG (PV-TEG), and module 03: PV with TEG and heat sink (PV-TEG-HS). These modules have been examined numerically under various weather conditions, including solar radiation, wind speed, and ambient temperature. The experimental and numerical results indicate that as solar radiation increases from 500 to 1000 W/m2, the temperature of the PV back sheet and PV solar cell also increases. Specifically, for module PV, module PV-TEG, and module PV-TEG-HS, the temperature increases by 57.3%, 56.1%, and 32% respectively. Additionally, the percentage output power (Pout) of the PV increases with rising solar radiation for the three modules, reaching 60.5%, 62.0%, and 87.39% respectively. Moreover, the percentage Pout of the TEG also increases with the increasing solar radiation for the three modules, with percentages of 0%, 299.25%, and 311.96% respectively. Furthermore, increasing wind speed leads to a decrease in the temperatures of the back sheet and solar cell, while simultaneously increasing the Pout of the PV for all three modules. However, the Pout of the TEG in module PV-TEG-HS decreases. The impact of increasing ambient temperatures on module PV-TEG-HS is relatively small compared to the other modules.

Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

A millimeter-wave (mmWave) gallium nitride (GaN) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) was implemented, considering a source via effect. In this paper, we introduce guidelines for designing GaN HPA MMICs, from device sizing to meeting high-power specifications, power matching considering source via effects, schematic design of three-stage amplifier structures, and electromagnetic (EM) simulation. Based on the results of load pull simulation and small-signal maximum stable gain (MSG) simulation, the GaN high-electron-mobility transistor (HEMT) size was selected to be 8 × 70 μm. However, since the source via model provided by the foundry was significantly different from the EM results, it was necessary to readjust the power matching considering this. Additionally, when selecting the source via size, the larger the size, the easier the matching, but since the layout of the peripheral bias circuit is not possible, a compromise was required considering the actual layout. To prevent in-band oscillation, an RC parallel circuit was added to the input matching circuit, and low-frequency oscillation was solved by adding a gate resistor on the PCB module. The proposed PA was fabricated with a commercial 0.1 μm GaN HEMT MMIC process. It exhibited 38.56 to 39.71 dBm output power (Pout), 14.2 to 16.7 dB linear gain, and 14.1% to 18.2% power-added efficiency (PAE) in the upper Ka band. The fabricated GaN power amplifier MMIC shows competitive Pout in the upper Ka band above 33 GHz.

Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

AbstractThis letter introduces the design of a highly efficient reconfigurable C/X dual‐band power amplifier (PA). Conventional dual‐band designs connect two amplifier branches for each band by a switch, whose transmitting losses will limit the efficiency of the PA. In alternative to the switching solution, the authors propose a novel design method using two branches of output matching networks (OMN) which the 5–6 and 8–12 GHz branch acting as active loads for each other, respectively. The band‐pass OMNs are applied, and parts of the passive matching components are replaced by transistors for channel selection. The proposed design has been simulated, implemented, and measured. The experimental results demonstrate a power added efficiency (PAE) of 45% at a pulsed output power (Pout) of 42 dBm in 5–6 GHz while a PAE greater than 39% at 42 dBm Pout in 8–12 GHz. Moreover, the second and third harmonics of both operating bands are compressed to −35 and −40 dBc, respectively. The proposed design technique addresses the challenges of low‐efficiency and lower‐band harmonic suppression in traditional dual‐band designs, making it suitable for application in next‐generation satellite communication and remote sensing systems.

Physics‐informed neural network assisted automated design of power amplifier by user defined specifications

AbstractThis article presents a model that can automatically produce a power amplifier's (PA) design parameters, that is, transmission lines (TLs) dimension, from a dataset of user‐specified design goals like gain, efficiency, linearity, and scattering (S‐) parameters. Based on the applied boundary conditions, a synthetic dataset is generated with the best range of design parameters (W and L). This dataset is utilized for training the physics‐informed neural network (PINN) model with user‐specified design goals as input and design parameters as target to produce the optimum value of W and L as the resultant output. Furthermore, utilizing the obtained dimensions, design, simulation, fabrication, and measurement of a PA are performed to validate our proposed model. The results of large signal measurements of PA are drain efficiency (DE) of 26.9%, power added efficiency (PAE) of 24.7%, output power (Pout) of 30.98 dBm at an input power of 19 dBm, and gain of 12.41 dB at an operating frequency of 1.625 GHz. It has been observed that the design parameters produced by the model have a significant agreement with the validated output. Also, the statistical error analysis is done by calculating the error metrics between the validated output and the actual output of the PA design.

Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

The impact of embedded microfluidic cooling on the performance of Ku-band gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) has been studied in this work. The research demonstrates that embedded cooling can substantially lower junction temperatures, mitigate the self-heating effect, and thereby improve the electrical performance of GaN MMIC PAs. Using merely 10.4 mW of pumping power (Ppump), the technology reduces the maximum junction temperature (Tj,max) from 216.7 to 147.8 °C. Furthermore, the system enhances the saturation current by 13.8%, increases output power (Pout) and gain (Gain) by 1.8 dB, elevates the power added efficiency (PAE) by 5.9%, and improves the heat flux of last gate (Qgate) to 37.3 kW/mm2 and the heat flux of MMIC (QMMIC) over 2.6 W/mm2, while reducing the thermal resistance (Rj-c) from 2.13 to 1.26 °C/W. Additionally, there is a notable improvement of the small signal gain (S21) by 2.5 dB. Therefore, the achievements in this work indicate that embedded cooling offers a powerful technique to suppress the thermal effects on GaN MMIC PAs, consequently improving their electrical performance.

On the improved RF performance of step field plate LDMOS transistor

This paper presents an analysis of the Step Field Plate Laterally Diffused Metal Oxide Semiconductor (SFP LDMOS) structure for improved high power and RF performance. The proposed structure is cost-effective, CMOS integrable, and has a high power figure of merit (FoM) due to its high off-state breakdown voltage (BVDS,off) and low specific on-resistance (Rsp). Significant improvement in frequency behavior is observed, as demonstrated by the flatter trans-conductance (gm), 12.5x lower gate-to-drain capacitance (Cgd), 2.5x lower gate-to-source capacitance (Cgs), and lower output conductance (gds). Single tone and double tone analyses are performed on an RF PA circuit implemented in TCAD. Results show ∼5 dBm higher output power (Pout), ∼6 dB higher power gain, and 46% higher drain efficiency (η), which are attributed to ∼1.9x lower drain-to-source capacitance (Cds) and ∼15 dBm lower magnitude of third-order intermodulation distortion due to lower third order derivative of drain current (ID). The paper also explains the device physics behind these observations.

A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband

This paper presents a high efficiency Rat-Race Coupler based compact GaN HEMT power amplifier (PA) design over broadband for high power transmitter in wireless communication. The rat-race coupler integrated PA Compact design is proposed for the first time as per author best knowledge. The design methodology used a higher order two open stubs and a rat-race coupler (RRC) at input/output sections to control harmonics impedances. The RRC is used to enhance the i/o power, and efficiency over broadband, which provides a good insertion loss, and consumes the least power and non-crucial impedance bandwidth for the normalized frequency band of interest. As a proof of concept, a PA is fabricated using a monolithic microwave integrated circuit (MMIC) 0.15 µm gallium nitride high electron mobility transistor (GaN HEMT) process. The measured result shows that the designed PA achieves a flat power added efficiency (PAE) of 65 % − 74 %, output power (Pout) of 44.8 dBm − 46 dBm, and drain efficiency (DE) of 72 % − 85 %, over a record wide frequency of 1.8 GHz − 3.6 GHz, which is the highest one among all reported harmonic tuned PAs.

A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications

The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications.

Automatic multi‐objective particle swarm optimization method for effective Doherty power amplifier design

AbstractIn this paper, an automatic multi‐objective particle swarm optimization (AMOPSO) method is developed for the design of Doherty power amplifiers (DPAs). In comparison to the well‐known built‐in optimizer available in commercial simulators, the proposed method not only reduces the optimization time, but also provides superior power added efficiency (PAE) for the final power amplifier. According to the reported measurements, the output PAE of the fabricated DPA exceeds 50% at 6 dB backoff, the saturated PAE is more than 61%, and the saturated output power (Pout) is over 43 dBm in the target frequency range of 1.9–2.1 GHz. As compared with existing optimization methods, the proposed method allows reducing optimization time by more than 37%.

A selectable single-frequency erbium fiber laser with septuple-ring apparatus for narrow linewidth and uniform power output

A single-longitudinal-mode (SLM) erbium-doped fiber laser (EDFL) with septuple-ring is demonstrated to acquire tunable and stable wavelength output. The demonstrated septuple-ring design not only can result in mode-filter operation to diminish the dense longitudinal-mode oscillations, but also can reach sub-kHz linewidth. The presented fiber laser also can extend the tuning bandwidth from 1512.0 to 1572.0 nm based on C-band gain-medium and lead to a uniform power output range within 0.36 dB power fluctuation. Furthermore, the obtained output linewidth, output power (Pout), output stability and optical signal to noise ratio (OSNR) of the EDFL are also executed and discussed.

Operating characteristics and design parameter optimization of permanent magnet linear generator applied to free-piston energy converter

A tubular permanent magnet linear generator (PMLG) with axial magnetized is proposed for the free-piston engine generator (FPEG). The structures and test rigs of the PMLG and FPEG prototypes are introduced. The working characteristics of the PMLG in FPEG system are analyzed under ignition conditions. A 2D finite element model of the PMLG is designed and verified based on initial design parameters and test results. The influences of key operating parameters on the output performance of PMLG are studied. On these basis, when considering the actual motion characteristics of the PMLG in FPEG system, the effects of different structural parameters on the power generation performance and efficiency (h) are investigated. Results show that when the working frequency of the FPEG is relatively small, the displacement profile resembles a sinusoidal curve. As the working frequency and stroke length increase, the power generation increases rapidly. As the air gap length and back iron shaft diameter decrease, and the stator slot number increases, the output voltage (U), current (I), power (Pout), and total loss power (Ploss) show an approximately linear increasing trend. As the pole arc coefficient and stator tooth width increase, the U, I, Pout, and Ploss first increase and then decrease. As the stator yoke thickness increases, the U, I, and Pout increase rapidly and then tend to stabilize. Besides, these structural parameters have little impact on power generation efficiency of this PMLG.

Experimental Investigation of Magnet Grouping Technique in Reduction of Cogging Torque and Total Harmonic Distortions in the Axial Flux PM Generator for Direct Drive Wind Turbine

Generators that have been used in direct-drive wind turbines could be produced with a permanent magnet between the power ranges of 1 kW to 1 MW. The cogging torque is the most significant problem of these generators. In this study, the pole grouping method is suggested to reduce the cogging torque of an axial flux permanent magnet (AFPM) synchronous generator with open slotted. The suggested method includes magnetic analyzes and experimental results of the 14-pole open slotted AFPM generator rotor poles that grouped as 7-7, 4-3-4-3, 3-2-2-3-2-2 and named A, B, C, respectively. Besides obtaining the cogging torque (Tc) data, the most considerable part of the study is to get total harmonic distortion (THDV) and output power (Pout) data in which show the electrical performance of the generator for different grouping angles. The optimum ranges for an AFPM generator were determined as 80% reduction for Tc, 15% reduction for Pout, and below 3% for THDV. The optimum grouping angles for A, B, and C were obtained by experimental studies as 32°, 32°, and 30°, respectively. Experimental results and the magnetic analysis have been shown that optimum values are obtained when the ratio of the pole angle to the grouping angle is

A continuous Class‐EF power amplifier based on the general continuous mode design theory

SummaryContinuous mode provides better bandwidth performance and constant efficiency by offering greater design flexibility in fundamental and harmonics. However, this mode is mainly applicable to limited classes of power amplifiers (PAs) (such as Class‐F, Class‐J, and their derived types). In view of this problem, this paper proposes a general design theory for high‐efficiency broadband continuous PAs, which can easily extend any waveform of PAs to obtain the continuous impedance space. In theoretical analysis, first, the high‐efficiency equations are analyzed from the perspective of frequency domain. Furthermore, combining time domain constraints, a general continuous mode analysis and solution theory is presented. The theory is applied to the bandwidth expansion of Class‐EF PAs, resulting in a new continuous Class‐EF (C‐EF) mode that maintains constant efficiency while offering greater broadband design freedom. The proposed theory is verified by fabricating a C‐EF PA using GaN HEMT CGH40010F, which demonstrated output power (Pout) ranging from 39.5 to 41.2 dBm and drain efficiency (DE) of 69.5% to 79.2% in the frequency range of 2.5–3.6 GHz.

Broadband PA design using Bayesian algorithms with different covariance functions

AbstractThis article examines the effects of Bayesian optimization (BO) with different covariance functions on the optimization of a radio frequency power amplifier (RFPA). An initial PA is designed based on a Chebyshev low‐pass topology using a 10 W Gallium Nitride (GaN) transistor. The objective function is established in a novel manner. The performance of the initially designed PA was optimized by using various BO algorithms, including two different acquisition functions and five different covariance functions. Both simulation and measurement results indicate that the kernel squared exponential (KSE) and Matérn32 covariance functions provide the best option for optimizing PA by BO. A broadband power amplifier (PA) operating at a frequency range from 2.5 GHz to 3.5 GHz has been developed with an output power (Pout) greater than 40.8 dBm and a power‐added efficiency (PAE) greater than 65%.

High-Performance Wearable Bi2Te3-Based Thermoelectric Generator

Wearable thermoelectric generators (w-TEGs) convert thermal energy into electrical energy to realize self-powering of intelligent electronic devices, thus reducing the burden of battery replacement and charging, and improving the usage time and efficiency of electronic devices. Through finite element simulation, this study successfully designed high-performance thermoelectric generator and made it into wearable thermoelectric module by adopting “rigid device—flexible connection” method. It was found that higher convective heat transfer coefficient (h) on cold-end leads to larger effective temperature difference (ΔTeff) and better power generation performance of device in typical wearable scenario. Meanwhile, at same h on the cold-end, longer TE leg length leads to larger ΔTeff established at both ends of device, larger device output power (Pout) and open-circuit voltage (Uoc). However, when the h increases to a certain level, optimization effect of increasing TE leg length on device power generation performance will gradually diminish. For devices with fixed temperature difference between two ends, longer TE leg length leads to higher resistance of TEGs, resulting in lower device Pout but slight increase in Uoc. Finally, sixteen 16 × 4 × 2 mm2 TEGs (L = 1.38 mm, W = 0.6 mm) and two modules were fabricated and tested. At hot end temperature Th = 33 °C and cold end temperature Tc = 30 °C, the actual maximum Pout of the TEG was about 0.2 mW, and the actual maximum Pout of the TEG module was about 1.602 mW, which is highly consistent with the simulated value. This work brings great convenience to research and development of wearable thermoelectric modules and provides new, environmentally friendly and efficient power solution for wearable devices.

Three-dimensional graphene foam based triboelectric nanogenerators for energy systems and autonomous sensors

In this work we investigate the potential of three-dimensional graphene (3DG) foam as an active layer in triboelectric nanogenerators (TENGs) and as an energy harvesting power source for autonomous sensors. A series of comprehensive measurements have been carried out to test the output characteristics of 3DG-TENG under cyclic mechanical stimulus, capable of operating TENG in contact-separation mode at different frequencies, gap distances between electrodes, and applied pressures. The triboelectric response of 3DG-TENG (with an effective surface of 16 cm2) showed maximum open-circuit voltage (Voc) and short-circuit current (Isc) of 400 V and 105.7 μA respectively when stimulated at 3 Hz (contact-separation frequency) and 70 mm (optimum gap distance). Under the same conditions, a maximum output power (Pout) of around 10.37 W/m2 is produced using an external load resistance of 40 MΩ; this is an order of magnitude lower resistance than that needed with other graphene based TENG variants. 3DG-TENG exhibited great stability in the output characteristics with 15,000 cyclic mechanical stimuli and a retention percentage in Pout above 95%. This is a significant improvement with respect to other carbon based TENG`s, which show enhanced deterioration of TENG performance due to material transfer between electrodes and plastic deformation of triboelectric materials. Simulations of TENG Voc using distance dependent model determined high triboelectric charge densities in the range of mC/m2. Here, we also demonstrate the potential of 3DG-TENG as an energy supply for energy storage devices, and as an active layer in an autonomous pressure sensing platform for anonymous room occupancy monitoring in smart buildings.

Performance Analysis of Conventional MPPT Techniques for a Solar PV System

The effectiveness and accuracy of two different MPPT methods of solar photovoltaic (PV), namely Perturb & Observe (P&O) and Constant Current (CC) have been investigated in this study. The main objective of this study is to test the impacts of temperature and solar irradiance (insolation) variations on solar PV output power which are achieved through these methods. Usually, solar insolation and temperature are the two most important influencing factors that have a significant impact on the output power (Pout). Here, the two conventional MPPT techniques have been applied to analyze the response through power characteristics curves of solar PV systems subject to changing environmental conditions. The MPPT techniques have been implemented on the solar PV system using MATLAB®. Additionally, the output power curves at various irradiances are shown in this work. The research demonstrates that the P&O-based MPPT method outperforms the CC-based MPPT method.

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

This paper presents the design procedure of an efficient compact monolithic microwave integrated circuit power amplifier (MMIC PA) in a 0.1 μm GaN-on-Si process for 5G millimeter-wave communication. Load/source-pull simulations were conducted to correctly create equivalent large-signal matching models for stabilized power cells and to determine the optimal impedance domain. The shorted stub with bypass capacitors minimizes the transistor’s output reactance, simplifying the matching objective to an approximate real impedance transformation (IT). With miniaturization as the implementation guide, explicit formulas and tabulated methods based on mathematical analysis were applied to synthesize the filtering matching networks (MNs) for the input and output stages. In addition, a CAD-dependent numerical optimization approach was used for the interstage MN that needs to cope with high IT ratio and complex loads. The continuous-wave (CW) characterization for the proposed two-stage PA demonstrated 19.8 ± 0.7 dB of small-signal gain, very flat output power (Pout) and power-added efficiency (PAE) at 4 dB gain compression of 32–32.4 dBm and 34–34.6%, respectively, over 24–30 GHz, with 37.1% of peak PAE at mid-frequency.