Results are shown here for low energy ion scattering spectrometry (ISS) experiments on compound semiconductors such as mercury cadmium telluride (HgCdTe) grown by liquid phase epitaxy (LPE) on CdTe substrates. By proper etching of the substrates and control of epitaxial growth conditions, surfaces of the zinc blende sphalerite structure may be obtained in which {111] faces have a top layer of cadmium and mercury (A sites) or of tellurium (B sites). Ion scattering experiments at low energies (500 V or less) on epitaxial HgCdTe shown only A or B sites. However, when the bombarding ion beam potential is raised to values conventionally used (1500–2500 V), then energy losses from both A and B atoms are observed. At these higher energies the ions displace the outer atoms or tunnel through to interact with atoms in the second layer. Spectra obtained at these higher energies shown interesting fine structure which suggest that energy losses are occurring in multiple collisions and nonbinary scattering. Scattered ion yield curves, which for some elements show oscillatory fine structure, are dramatically different for A and B surfaces. Even though these yield curves are very complicated because of the structure and number of elements, the fine structure may prove useful for further understanding of interaction of neighboring atoms. Yield curves along with conventional low energy ion scattering spectra provide a unique method of analysis of the outermost atomic layer of epitaxial films.