In applying ceramics to stuctural components, the assurance of minimum strength is an important factor in achieving high reliability. The fracture strength of ceramics is generally determined by the worst processing flaw. Flaws induced by machining have taken on greater importance than ever before since ceramic processing technologies have made progress toward the successful elimination of internal flaws such as inclusions, agglomerates, exaggerated particles and voids. This means that the elimination of surface flaws produced during machining is a key to further improvement in strength. When strength is governed by surface flaws, strength recovery can be expected to occur at high temperatures. As indicated by Evans [1], crack healing in ceramics can actually take place at high temperatures below the threshold stress intensity, and negative crack velocity is described as a function of the applied stress intensity. Crack tip blunging, another phenomenon occurring under hightemperature loads, works to counteract subcritical crack growth. It was reported that the strength of sintered silicon nitride, having a Knoop indentation flaw, increased due to crack tip blunting below a stress intensity of 0.1 MPam 1/2 at 1200 °C in a nitrogen atmosphere [2]. These studies seem to indicate that diffusional flow along the crack interface to the crack tip produces crack tip blunting, and that further diffusional flow to the crack interface results in crack healing. Oxidation forming a dense surface layer can heal a crack. The strengthening of silicon carbide as a result of oxidation at 1400 °C was thought to be attributed to the healing of surface cracks [3]. Similar phenomena can be expected to occur in silicon nitride at high temperatures because a dense silicon oxide layer can be formed on the surface. If an oxide layer is formed at the crack interface, blunting the crack, higher threshold stress intensity values may be obtained than those seen for diffusion mechanisms. A novel technique, using a modified stress rupture test, has been proposed as a way of determining the threshold stress intensity at high temperatures, based on the idea that strength can increase under a stress level below the threshold [2, 4]. This technique was used in the present study to explore the threshold stress intensity for oxidative crack healing at high temperatures, resulting in increased strength. The material used in this study was sintered silicon nitride having a density of 3.11 g cm -3. This material was fabricated by compacting and sintering a powder mixture (SN-COA, Ube Co., Ltd) having a composition of 90 wt% Si3N4, 5 wt% Y203 and 5 wt% A1203 in a nitrogen atmosphere under a pressure of 0.1 MPa at 1650 °C for 4 h. Specimens prepared for the tests were ground to the dimensions of 3 mm x 4 mm x 38 mm. At the centre of the surface where tensile stress was applied, a crack was introduced with a Knoop indenter at a load of 198 N. The surface layer with a thickness of 100/xm was ground to eliminate the residual stress induced by the indentation [2, 5]. Fig. 1 shows the apparatus for applying flexural stress at high temperatures. The applied static load was transmitted through the level arm mechanism. In order to detect the time to failure, a microswitch connected to a timer was positioned just below the lever arm. The compact furnace was made of silicon carbide heating elements. The fixtures and the loading rods were machined from dense silicon carbide. The load was applied at the outset at room temperature to avoid healing the crack before reaching the test temperature. It took about 1.5 h to reach the test temperature of 1100 °C, and the temperature was then kept constant for 3 or 20 h. The electric power was switched off to let the furnace cool down after the test in order to remove the specimen. The strength of the specimens after being subjected to high temperature loading was measured in a four-point speed of 0.5 mm min -1. lengths for both high strength measurement at and 30 mm, respectively. flexural test at a crosshead The inner and outer span temperature loading and room temperature were 10