To obtain more photosensitive S-diodes, silicon should be compensated for by impurities, which increase the photosensitivity of the original crystals. Diffusion of vanadium in silicon was carried out in evacuated or open quartz ampoules at a temperature of 900-1250 °C for 2-20 hours. Silicon wafers 0.5-1.0 mm thick and an alloying element of vanadium were placed in the ampoule. Usually used n-Si with ρ ~ 5 ÷ 200 Ω·sm and with a thickness of 0.2-0.5 mm. The concentration of deep levels introduced during diffusion was 1014 cm-3. The resistivity of silicon after diffusion increased to 103-104 Ω·sm at 300 K, and the diffusion length Ld decreased to 10-30 μm. S-diodes were made in a vacuum by melting aluminum and Au + 0.1% Sb alloy at 700 °C for 1 min. The contact area (S) is approximately 0.2 mm2, the base thickness d = 0.2-1.0 mm. Attitude d/Ld≈10 ÷ 100. Iincline ~ 1/tinclusion in a wide range of currents is linear, where Iincline> Ibre. Determined by the slope Iincline ~ 1/tinclusion the charge is Qcr = 3.52·10-9C. In this case, the average concentration of injected current carriers in the base is n = 5.44·1013 cm-3, which is in good agreement with the concentration of electroactive atoms V in Si, determined by capacitive methods. The dependence for S-diodes from n-Si <V> has a complex form at each temperature and is approximated by two exponents. The obtained experimental results, their analysis and conclusions on S-diodes from Si <V> can be used as a temperature relay, photo relay, switches and photodetectors controlled by the sensitivity current.