Optoelectronic Performance Research Articles

Tuning the bandgap without compromising efficiency: ambient solution processing of Ge-alloyed (Ag,Cu)2Zn(Sn,Ge)(S,Se)4 kesterite thin-film solar cells

The photovoltaic sector currently experiences a growing demand for deeply-integrated technologies in agriculture, buildings, vehicles, among others. Kesterite compounds provide a versatile solution through their tunable bandgap via isovalent alloying. However, this should be done while preserving material opto-electronic quality and device performance, which is an unresolved challenge. Indeed, tuning the bandgap of kesterites must ensure low crystalline disorder to counteract the associated open-circuit voltage (Voc) losses when used in solar cells. To achieve this goal, this work introduces a simple molecular ink recipe realized in ambient air to process single-phase high-quality Ag,Gealloyed kesterite absorbers. By varying the Ge content from 0 to 100%, the absorber bandgap covers the range from 1.15 to 1.5 eV, in which the Urbach energy remains close to 20 meV and promisingly low Voc deficits are observed. In particular, the champion efficiency of 12.1% obtained with 40% Ge breaks the record for Ge-alloyed kesterites with a 1.2 eV bandgap by remarkably reaching 62% of the Shockley-Queisser limit for Voc. This study demonstrates a promising strategy to solve the issue of large band tailing and low opto-electronic quality in widebandgap kesterites while establishing a foundation for solution-processed kesterite solar cells with tunable bandgap and promising performance.

Optimization of P-electrode structures to enhance current spreading uniformity in micro-LEDs

In this study, we designed and fabricated parallel-connected green micro-LEDs with three different P-electrode configurations: rounded (Sample A), cross-shaped (Sample B), and circular (Sample C). We then systematically evaluated the impact of these electrode shapes on the devices’ optoelectronic performance. The results show that the shape of the P-electrode significantly influences the optoelectronic performance of micro-LEDs. With a round mesa, Sample C exhibits the lowest operating voltage and the smallest dynamic resistance and achieves a peak external quantum efficiency (EQE) of 19.57%, which is 25.53% and 11.13% higher than that of Sample A (15.59%) and Sample B (17.61%), respectively. The analysis suggests that this improvement is mainly due to enhanced uniformity in current spreading and shorter current injection paths. COMSOL simulations, along with thermal resistance and surface temperature measurements, confirm that different P-electrode shapes affect the uniformity of current distribution in micro-LEDs, which in turn impacts the device’s thermal performance. TracePro simulation results further demonstrated that circular P-electrodes optimize the light output of the device. We believe that this study provides a valuable reference for the design and fabrication of micro-LED chips.

Effective Dual Cation Release in Quasi‐2D Perovskites for Ultrafast UV Light‐Powered Imaging

AbstractRuddlesden‐Popper quasi‐2D perovskites represent robust candidates for optoelectronic applications, achieving a delicate balance between outstanding photoresponse and stability. However, mitigating the internal defects in polycrystalline films remains challenging, and their optoelectronic performances still lag behind that of their 3D counterparts. This work highlights the profound impact of defect passivation at the buried interface and grain boundaries through a dual‐cation‐release strategy. Cations released from the pre‐deposited inorganic iodide buffer layer effectively repair deep‐level defects by inducing low‐dimensional phase reconstruction and interacting with undercoordinated ions. The resulting quasi‐2D perovskite polycrystalline films feature large grain size (>2 µm) and minimum surface roughness, along with alleviated out‐of‐plane residual tensile strain, which is beneficial for inhibiting the initiation and propagation of cracks. The fabricated photodetector demonstrates drastically improved self‐powered photoresponse capability, with maximum responsivity up to 0.41 A W−1 at 430 nm and an ultrafast response speed of 161 ns / 1.91 µs. Moreover, this strategy is compatible with the photolithography‐assisted hydrophobic‐hydrophilic patterning process for fabricating pixelated photodetector arrays, which enables high‐sensitivity imaging. This study presents a feasible defect passivation approach in quasi‐2D perovskites, thereby providing insights into the fabrication of high‐performance optoelectronic devices.

Construction and Multifunctional Photonic Applications of Light Absorption-Enhanced Silicon-Based Schottky Coupled Structures.

To expand the detection capabilities of silicon (Si)-based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si-based graphene photodetector. This work introduces a novel Si-based Schottky coupled structure by in situ growth of 3D-grapheneand molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual-enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D-graphene's natural nano-resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built-in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380-2200nm. It stably outputs photocurrent under high-frequency (1 kHz) modulated laser (2200nm), with a responsivity (R) of 40mAW-1 and detectivity (D*) of 1.15×109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240×200 pixels).

Interfacial Metal Chlorides as a Tool to Enhance Charge Carrier Dynamics, Electroluminescence, and Overall Efficiency of Organic Optoelectronic Devices.

Interface engineering is the key to optimizing optoelectronic device performance, addressing challenges like reducing potential barriers, passivating interface traps, and controlling recombination of charges. Metal fluorides such as lithium fluoride are employed in interface modification within organic devices due to their strong dipole characteristics but carry health risks, high processing costs, and minimal impact on interface traps in organic electronics. Hence, this study investigates alternative metal chloride (MC) nanocrystals (sodium, cesium, rubidium, and potassium chlorides) that exhibit a strong dipole moment and are readily processable with the aim of reducing the influence of interface traps. Interfacial properties are assessed via various techniques, including electron paramagnetic resonance, X-ray/ultraviolet photoelectron spectroscopy, capacitance-voltage measurements, and density functional theory calculations. In organic light-emitting diodes (OLEDs), the influence of MC on charge transfer, trap density, and light emission properties is evaluated. MCs in ZnO:PEIE nanocomposites (NCs) show improved charge transport, accelerated trapping/detrapping in ZnO:PEIE NCs, and a 50% reduction in active traps in NaCl-based devices versus the reference without MCs. RbCl-, CsCl-, and NaCl-based OLEDs exhibit substantial reductions in the potential barrier between the electron injection layer and the metal contact (Al) from 4.43 to 2.93, 3.02, and 4 eV, respectively, accompanied by enhancements of 35, 27, and 25% in electroluminescence intensity.

A Combination of Silver Nanowires and Al2O3 to Replace ITO and MgF2 in a Cu(In,Ga)Se2 Thin‐Film Solar Cell

AbstractSilver nanowire (AgNW) transparent conducting electrodes can be prepared via a low‐cost process and deliver optoelectronic performance comparable to or even better than that of indium tin oxide (ITO). However, their integration into a real device is challenging, mainly because of the weak adhesion between AgNWs and the underlayer. Furthermore, when AgNWs replace ITO, a different material needs to be considered for the antireflection coating (ARC) of a thin‐film solar cell. A combination of AgNWs and Al2O3 is employed to replace both ITO and the MgF2 in a Cu(In,Ga)Se2 (CIGS) thin‐film solar cell. The quality of the contact between the AgNWs and CdS buffer is improved by introducing a chemical‐bath‐deposited welding layer, which improves the fill factor of the cell from 43.4% to 68.7%. Accordingly, the exposed surface of the CIGS thin‐film solar cell changes from ITO to CdS. Therefore, the commonly used MgF2 ARC is replaced with Al2O3, which is a better match in terms of the refractive index for AgNW‐based CIGS thin‐film solar cells. The adoption of the Al2O3 ARC increases the short‐circuit current density of the cell by 7.3%. In conclusion, a device structure of Al2O3/AgNW/CdS/CIGS/Mo is suggested for CIGS thin‐film solar cells.

Defect Self-Elimination in Nanocube Superlattices Through the Interplay of Brownian, van der Waals, and Ligand-Based Forces and Torques.

Understanding defect healing is necessary to control the electronic and optoelectronic performance of devices based on nanoparticle (NP) superlattices. However, a key challenge remains to understand how NP interactions and the resulting dynamics are coupled to defect self-elimination during assembly processes. Additional degrees of freedom that account for the anisotropic nature of NPs associated with rotational dynamics and torques further complicate the challenge. Here, we investigate nanocube (NC) superlattices by employing liquid-phase transmission electron microscopy, continuum theory, and molecular dynamics simulations. Our detailed analyses reveal that interparticle forces and torques due to ligand interactions dominate those from Brownian motions and van der Waals interactions. More importantly, NC translations and rotations induced by unbalanced forces and torques are transmitted to neighboring NCs, prompting "chain interactions" in a two-dimensional (2D) network and expediting self-elimination. The mechanistic understanding will further enable the design and fabrication of defect-free superlattices as well as those with tailored defects via assembly of anisotropic particles.

Pyridalthiadiazole-Based Molecular Chromophores for Defect Passivation Enables High-Performance Perovskite Solar Cells.

Passivation of defects at the surface and grain boundaries of perovskite films has become one of the most important strategies to suppress nonradiative recombination and improve optoelectronic performance of perovskite solar cells (PSCs). In this work, two conjugated molecules, abbreviated as CPT and SiPT, are designed and synthesized as the passivator to enhance both efficiency and stability of PSCs. The CPT and SiPT contain pyridalthiadiazole (PT) units, which can coordinate with undercoordinated Pb2+ at the surface and grain boundaries to passivate the defects in perovskite films. In addition, with the incorporation of CPT, the crystallized perovskite films exhibit more uniform grain size and smoother surface morphology relative to the control ones. The efficient passivation by CPT also results in better charge extraction and less carrier recombination in PSCs. Consequently, the CPT-passivated PSCs yield the highest power conversion efficiency (PCE) of 23.14 % together with better storage stability under ambient conditions, which is enhanced relative to the control devices with a PCE of 22.14 %. Meanwhile, the SiPT-passivated PSCs also show a slightly enhanced performance with a PCE of 22.43 %. Our findings provide a new idea for the future design of functional passivating molecules towards high-performance PSCs.

Impact of PEDOT:PSS/Ti3C2Tx composite hole transport layer on the performance of perovskite light emitting diodes

The two-dimensional transition metal carbide MXenes, often designated by Ti3C2Tx, have garnered significant interest on account of their distinctive optoelectronic characteristics. In this paper, PEDOT:PSS/Ti3C2Tx composite hole transport layer (HTLs) was prepared by adding the MXenes material Ti3C2Tx into PEDOT:PSS, and quasi-two-dimensional perovskite light-emitting diodes (PeLEDs) were fabricated and investigated. While the addition concentration of Ti3C2Tx was 0.25 mg/mL, the optimal device shows the maximum luminance of 6250 cd/m2, and the current efficiency of 6.17 cd/A, which is 133 % and 112 % higher than the reference device without Ti3C2Tx, respectively. It is indicated that the additive incorporation of Ti3C2Tx in PEDOT:PSS can improve the efficiency of hole injection and conductivity of hole transport layer, and passivate the defects of perovskite film, thus enhancing the optoelectronic performance of PeLEDs. The findings of this study indicate that the PEDOT:PSS/Ti3C2Tx composite HTLs has considerable potential for application in PeLEDs.

First-principles studies of strain-tunable InN monolayer: applications for switching and optoelectronic devices

Abstract Two-dimensional (2D) materials are attracting significant attention for their potential applications in the post-Moore era. In this work, we systematically investigate the effect of strains on the electronic structure, transport and optoelectronic properties of 2D Indium nitride (InN) monolayer using density functional theory and non-equilibrium Green’s function methods. The results show that strains can modulate the electronic properties. Specifically, biaxial strain triggers the transition from semiconductor to metal and indirect to direct band gap. On this basis, the constructed InN-based nanodevice exhibits current switching ratios up to 1010. In addition, the optoelectronic device based on InN monolayer exhibits a robust photoelectric response in the red light. Meanwhile, biaxial strain can improve the optoelectronic performance of InN-based optoelectronic devices. The compressive strains blue-shift the photocurrent peaks of the InN monolayer, which effectively modulates its detection range in the visible light region. These findings underscore the potential applications in nanotechnology, particularly in nano-switches and optoelectronic devices.

Luminescence Patterns on Multimillimeter Single-Crystal MAPbBr3 Microplatelets via Thermal Ablation Effects.

The single crystal distinguishes itself as the most outstanding representative of excellent optoelectronic performance among perovskite semiconductors due to its exceptional charge carrier properties, extraordinary optophysics, precise structural geometries, and superior material stabilities. However, it exhibits mediocre performance in light emission, which can be attributed to its excessive carrier diffusion lengths and extremely low recombination rates. To address this challenge, this study puts forward a controllable high-temperature annealing treatment strategy concentrating on multimillimeter-scale MAPbBr3 micrometer-thick platelet single crystals (MPSCs). Through the utilization of thermal ablation effects to convert the surface monocrystalline lattices into polycrystalline perovskite nanocrystals (PNCs) with a remarkably increased specific surface area, the fluorescence intensity arising from the rapid recombination of free carriers on the PNC surface is enhanced by 320 times compared to the pristine MPSC surface. These PNCs produced through surface annealing, with the characteristic of loose adhesion to surfaces, can be mechanically wiped away and regenerated in situ via reannealing the residual MAPbBr3 MPSCs, guaranteeing high intensity, durability, and standard geometric fluorescence. Moreover, by regulating the surface distributions of thermal ablation effects and carrying out embossing annealing treatment or laser direct writing, we can design and fabricate relatively complex, high-contrast (255×), and clearly resolved fluorescence patterns on MPSC surfaces.

Computational insights into transition metal-based BaCoX3 (X = Cl, Br, I) halide perovskites for spintronics, photovoltaics, and renewable energy devices

Ab-initio simulations using density functional theory (DFT) were employed to investigate the structural, mechanical, electronic, magnetic, optical, and thermoelectric properties of halide perovskites \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {BaCoX}_3$$\\end{document} (X = Cl, Br, I). Structural optimization and mechanical stability assessments confirm the reliability of these perovskites in a hexagonal P\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$6_3$$\\end{document}mc symmetry. The stability of the ferromagnetic phase was validated through total crystal energy minimization via Murnaghan’s equation of state. Electronic band structures and density of states, derived from the generalized gradient approximation (GGA), reveal a semiconducting ferromagnetic nature in the spin up channel, spotlighting their potential in semiconductor spintronic applications. Phonon dispersion analysis of \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {BaCoCl}_3$$\\end{document} and \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {BaCoBr}_3$$\\end{document} revealed positive phonon modes throughout the entire Brillouin zone, confirming their dynamical stability. In contrast, \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {BaCoI}_3$$\\end{document} demonstrated dynamical instability. The elastic constants confirm the mechanical stability and ductile nature of the perovskites. Optical and dielectric properties of these perovskites show significant UV absorption and photoconductivity, making them highly suitable for optoelectronic and solar cell applications. Finally, transport properties, such as the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit (ZT) unveil their exceptional thermoelectric performance. Combining half-metallic ferromagnetic traits with superior thermoelectric and optoelectronic performance positions \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {BaCoX}_3$$\\end{document} compounds as exceptional candidates for applications in spintronics, optoelectronics, and thermoelectrics. This comprehensive investigation demonstrates their ability to excel across a diverse array of advanced technological applications.

Investigating the adaptability of CsMF3 (M = Ge, Si) perovskites under hydrostatic pressure for improved optoelectronic performance: A DFT-based computational study

Investigating the adaptability of CsMF3 (M = Ge, Si) perovskites under hydrostatic pressure for improved optoelectronic performance: A DFT-based computational study

A novel coalesced quantum dot buffer approach to mitigate large lattice mismatch in III–V epitaxy

III–V compound semiconductors, such as indium arsenide (InAs), are crucial in the fields of electronics and optoelectronics due to their unique properties, including a narrow bandgap, high electron mobility, low effective electron mass, and outstanding optoelectronic performance. However, the lattice constant mismatch of 7.2% between InAs and gallium arsenide (GaAs) leads to a high dislocation density in the InAs epilayer, typically around 109 cm−2 or higher when InAs is directly grown on GaAs (001). A common traditional approach to reduce material defect density involves using a compositionally graded buffer structure, which requires a thickness of several micrometers. This paper presents an innovative method for growing device-quality InAs epilayers on GaAs (001) substrates through an InAs coalesced quantum dot buffer (CQDB) layer. Remarkably, the InAs CQDB method requires a thickness of only several tens of nanometers, leading to significant improvements in film quality. Utilizing the InAs CQDB layer allows for a substantial reduction in dislocation density from 1.8 × 109 to 3.6 × 107 cm−2. The findings of this study provide a crucial research foundation for addressing lattice mismatch challenges in epitaxial growth, particularly for those investigating methods to integrate different materials in advanced device applications.

Controlled Growth of 2D‐3D Perovskite Lateral Heterostructures for Wavelength‐Tunable Light Communication

AbstractLateral heterostructures based on halide perovskites exhibit great potential in the advancement of next‐generation optoelectronic devices. Among them, mixed dimensional perovskite heterostructures, particularly 2D‐3D ones, offer promising opportunities for semiconductor integration and device miniaturization by combining the advantages of 2D and 3D perovskites. However, the controllable and rapid growth of 2D‐3D halide perovskite lateral heterostructures has not yet been achieved. This study presents an efficient strategy that integrates one‐pot method and space‐confined process to enable liquid‐phase lateral growth of a series of 2D Ruddlesden‐Popper (RP) perovskites on the sides of 3D perovskites. The photodetectors (PDs) based on (BA)2MAn‐1PbnBr3n+1‐MAPbBr3 (n = 1, 2, 3) lateral heterostructures demonstrate outstanding optoelectronic performance, featuring an on/off ratio of up to 1.4 × 104, a high responsivity of 4.4 A W−1 and a detectivity of 3.9 × 1013 Jones at 425 nm, 3 V bias. In addition, by combining the tunable dual‐band photoresponse characteristic with the dual‐beam irradiation modes, a wavelength‐tunable light communication system based on the lateral heterostructure PDs is realized. This work provides a convenient and reliable approach for the direct growth of mixed‐dimensional halide perovskite heterostructures, further demonstrating their potential in high‐performance detecting and dual‐band sensing fields.

CVD‐Synthesized CsAg2I3 Single Crystals toward Polarization UV Photodetection and Anti‐Counterfeiting Identification

AbstractLow‐dimensional ternary silver halide (CsAg2I3), an emerging inorganic lead‐free perovskite, has garnered significant scientific attention due to its strong quantum confinement effects, wide bandgaps, non‐toxicity, and others. However, the photophysical properties and optoelectronic performance of CsAg2I3 materials and devices are significantly compromised by crystal quality and defects arising from liquid‐phase preparation. Herein, 1D CsAg2I3 single crystals newly grown by the chemical vapor deposition method are reported. These crystals display exceptional quality and stability over a 3‐month period despite exposure to air and moisture. The high in‐plane anisotropic structure, phonon vibrations, and refractive index of CsAg2I3 crystals are also experimentally elucidated. Polarization‐sensitive ultraviolet photodetector based on the CsAg2I3 monocrystal features a responsivity of 139 mA W−1, a specific detectivity of 1.05 × 1011 cm Hz1/2 W−1, an ultra‐fast photoresponse speed of 48.2/69.1 µs, and a dichroic ratio of 2.66 upon 360 nm irradiation at −5.0 V bias. The photodetector excels amongst its competitors, moving toward the potential application of rapid optical anti‐counterfeiting identification. This work, which leverages grown high‐crystalline and highly stable CsAg2I3 monocrystals, holds promises for advancing this functional material into a robust next‐generation optoelectronic devices capable of probing sensitive optical sensing and specific azimuth recognition.

Leveraging Phenazine‐Based Ligands for Optimized Perovskite Optoelectronic Performance Through Chelation and Redox Engineering

AbstractPerovskite nanocrystals (PNCs) hold immense potential for optoelectronic and photovoltaic applications. However, their performance is hindered by surface defects that promote non‐radiative recombination and reduce stability. Surface engineering, particularly through defect passivation, is crucial for achieving high‐performing perovskite solar cells. Chelation has been shown to significantly improve the efficiency and stability of perovskite solar cells. In this study, a novel chelation strategy using 1,10‐Phenanthroline (Phen) is presented as a bidentate chelating ligand to effectively target and passivate these detrimental surface defects. By strategically designing a Phenanthroline derivative, dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine (Phen‐derivative) with optimized redox potentials, dual functionality: efficient defect passivation and hole transport is achieved. X‐ray photoelectron spectroscopy (XPS) confirms the superior binding capability of the Phen‐derivative due to chelation. This strong interaction facilitates efficient and ultrafast charge transfer from PNCs and the formation of a long‐lived charge‐separated state, as evidenced by sustained bleaching in transient absorption spectra. A metal‐dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine complex (Ir‐complex) derived from dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine, but lacking a chelation site, hinders desired hole transfer despite similar charge transfer energetics. This work emphasizes the critical role of chelation‐mediated interfacial interactions and energy alignment in designing effective charge shuttle molecules and unlocking the potential of lead‐chelating hole transporters for next‐generation light‐harvesting technologies.

Antibonding valence states induce low lattice thermal conductivity in metal halide semiconductors

Reduction of phonon mediated thermal transport properties, i.e., lattice thermal conductivity (κL), of semiconductors can strongly affect the performance of thermoelectrics and optoelectronics. Although extrinsic routes to reduce κL have been achieved through selective scattering of phonons via doping, alloying, and hierarchical nano-structuring, semiconductors with intrinsically low κL have recently gained widespread attention due to their ability to decouple electronic and phonon transports. While innate low κL in crystalline semiconductors is a desired requirement to achieve high performance thermoelectrics, the solar upconversion efficiency of photovoltaics based on metal halide perovskites (MHPs) have been shown to increase due to their ultralow κL through the hot-phonon bottleneck effect. Therefore, understanding the microscopic mechanisms underlying ultralow κL in crystalline semiconductors is extremely important. Several structural factors that are intrinsic to a material have been shown to strongly influence the reduction of κL. Among them, the presence of rattling atoms, lone-pair electrons, and large lattice anharmonicity have been widely studied. Here, we bring out yet another largely unexplored intrinsic characteristic of materials related to the filled antibonding valence states (AVS) near the Fermi level, which are shown to induce low κL in crystalline compounds. We focus our review on an emerging class of compounds–metal halide semiconductors including MHPs and investigate the interplay between structures, chemical bonding and κL, carefully curating from literature a list of 33 compounds having different structure dimensionality with known κL. We established a universal connection between the elastic moduli, speeds of sound, and κL with the presence of AVS just below the Fermi level. We found that large peak in the AVS correlates positively with lower values of elastic moduli, speeds of sound, and κL, providing antibonding states based design criteria of low-κL compounds. Furthermore, we discuss different synthesis strategies, which are crucial for experimental realization of ultralow κL through structure manipulation. Additionally, we outline how chemical bonding data can be utilized in machine learning models for predictive modeling of κL. We hope that our approach of understanding low-κL through the viewpoint of chemical bonding theory would encourage exploration of phonon transport properties in other families of materials having filled AVS that can provide further insights on the structure-bonding-property relationships aiding novel materials design approaches.

Lead-Free CsBi3I10 Thin-Film flexible photodetectors with enhanced performance for broad spectral response

By employing a hot spin-coating method, CsBi3I10 thin-film photodetector was fabricated onto flexible PET substrate. The resulting nontoxic photodetector demonstrated exceptional optoelectronic performance, featuring an Ilight/Idark ratio of 1.8 × 103, a responsivity of 18.3 mA/W and a detectivity of 2.95 × 108Jones. It also showed a broad spectral response and maintained consistent performance after 506 light switching cycles and 1000 bending cycles. The dynamic imaging capability of the device was further validated, illustrating its potential for diverse applications. This work pioneers the application of CsBi3I10 perovskite thin-film in flexible photodetectors, offering a green, stable and high-performance solution for next-generation optoelectronic devices.

Overcoming the Tradeoff of Visible Transparency and Electrical Conductance via Dual Smoothing of Dielectric/Metal Interfaces in Cu-Thin-Layer-Based Transparent Electrodes.

The rapid advancement of flexible optoelectronic devices, such as light-emitting diodes, solar cells, and electrochromic devices, necessitates the development of high-performance flexible transparent electrodes (TEs). Dielectric/metal/dielectric (DMD)-type TEs are promising alternatives to conventional indium tin oxide (ITO) due to the high electrical conductance, excellent visible transparency, and sufficient mechanical flexibility. However, the tradeoff between electrical conductance and visible transparency poses a challenge to performance enhancement. This study introduces an Ar-ion-mediated interface modification method to address this tradeoff by dual smoothing of dielectric/metal interfaces in TiOx/Cu/ZnO TEs. Implementing this dual smoothing methodology significantly enhances both electrical conductance and visible light transmittance, achieving a Haacke figure of merit 200% higher than that of an unmodified otherwise identical structure. The highest figure of merit is 0.113 Ω-1, a record high for Cu-thin-layer-based DMD TEs, far surpassing ITO electrode values. Further, the enhanced optoelectronic performance remains highly durable under severe and simultaneous electrical, thermal, and mechanical stresses, showcasing the potential for significant advances in flexible optoelectronics.