Abstract

By employing a hot spin-coating method, CsBi3I10 thin-film photodetector was fabricated onto flexible PET substrate. The resulting nontoxic photodetector demonstrated exceptional optoelectronic performance, featuring an Ilight/Idark ratio of 1.8 × 103, a responsivity of 18.3 mA/W and a detectivity of 2.95 × 108Jones. It also showed a broad spectral response and maintained consistent performance after 506 light switching cycles and 1000 bending cycles. The dynamic imaging capability of the device was further validated, illustrating its potential for diverse applications. This work pioneers the application of CsBi3I10 perovskite thin-film in flexible photodetectors, offering a green, stable and high-performance solution for next-generation optoelectronic devices.

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