Optoelectronic Memory Research Articles

Barrier Polarity Reversal Based on Interfacial Modification of Au Nanoparticles for Nonvolatile Multilevel Memory and Optoelectronic Synapses.

Optoelectronic synaptic devices, integrating light sensing and information processing capabilities, have emerged as advantageous tools for the implementation of visual neuromorphic computing. However, the transient light-triggered response characteristic typically results in unstable memory retention times and restricted current response ranges, posing significant challenges to the development and practical application of neural network systems. In response to these limitations, this study developed a nonvolatile optoelectronic memory based on the indium tin oxide (ITO)/Au nanoparticles (NPs)/amorphous Ga2O3 (a-Ga2O3)/Pt structure. Unlike conventional optoelectronic memories, this device features a modification with Au NPs that markedly enhances the Schottky barrier height at the interface. Au NPs function as a charge-trapping layer for sensitive and large-scale modulation of the barrier by the light field, thereby enabling the nonvolatile reversal of the device's barrier polarity. This innovative approach enables controllable multilevel data storage with an ultra large on/off ratio (∼104) and excellent retention capability exceeding 12,000 s. Additionally, the device emulates essential synaptic functions and demonstrates potential application values in visual weak signal perception and image memory. This study introduces a mechanism for Schottky barrier polarity control and presents a promising strategy for the development of future high-performance integrated devices and optoelectronic synaptic elements.

Correction to “Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor”

Correction to “Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor”

A Perspective on tellurium-based optoelectronics

Tellurium (Te) has been rediscovered as an appealing p-type van der Waals semiconductor for constructing various advanced devices. Its unique crystal structure of stacking of one-dimensional molecular chains endows it with many intriguing properties including high hole mobilities at room temperature, thickness-dependent bandgap covering short-wave infrared and mid-wave infrared region, thermoelectric properties, and considerable air stability. These attractive features encourage it to be exploited in designing a wide variety of optoelectronics, especially infrared photodetectors. In this Perspective, we highlight the important recent progress of optoelectronics enabled by Te nanostructures, which constitutes the scope of photoconductive, photovoltaic, photothermoelectric photodetectors, large-scale photodetector array, and optoelectronic memory devices. Prior to that, we give a brief overview of basic optoelectronic-related properties of Te to provide readers with the knowledge foundation and imaginative space for subsequent device design. Finally, we provide our personal insight on the challenges and future directions of this field, with the intention to inspire more revolutionary developments in Te-based optoelectronics.

Physical Vapor Deposition of Indium-Doped GeTe: Analyzing the Evaporation Process and Kinetics

Chalcogenide glasses have broad applications in the mid-infrared optoelectronics field and as phase-change materials (PCMs) due to their unique properties. Chalcogenide glasses can have crystalline and amorphous phases, making them suitable as PCMs for reversible optical or electrical recording. This study provides an in-depth analysis of the evaporation kinetics of indium-doped chalcogenides, GeTe4 and GeTe5, using the physical vapor deposition technique on glass substrates. Our approach involved a detailed examination of the evaporation process under controlled temperature conditions, allowing precise measurement of rate changes and energy dynamics. This study revealed a significant and exponential increase in the evaporation rate of GeTe4 and GeTe5 with the introduction of indium, which was particularly noticeable at higher temperatures. This increase in evaporation rate with indium doping suggests a more complex interplay of materials at the molecular level than previously understood. Furthermore, our findings indicate that the addition of indium affects the evaporation rate and elevates the energy requirements for the evaporation process, providing new insights into the thermal dynamics of these materials. This study’s outcomes contribute significantly to understanding deposition processes, paving the way for optimized manufacturing techniques that could lead to more efficient and higher-performing optoelectronic devices and memory storage solutions.

2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing.

In this era of artificial intelligence and Internet of Things, emerging new computing paradigms such as in-sensor and in-memory computing call for both structurally simple and multifunctional memory devices. Although emerging two-dimensional (2D) memory devices provide promising solutions, the most reported devices either suffer from single functionalities or structural complexity. Here, this work reports a reconfigurable memory device (RMD) based on MoS2/CuInP2S6 heterostructure, which integrates the defect engineering-enabled interlayer defects and the ferroelectric polarization in CuInP2S6, to realize a simplified structure device for all-in-one sensing, memory and computing. The plasma treatment-induced defect engineering of the CuInP2S6 nanosheet effectively increases the interlayer defect density, which significantly enhances the charge-trapping ability in synergy with ferroelectric properties. The reported device not only can serve as a non-volatile electronic memory device, but also can be reconfigured into optoelectronic memory mode or synaptic mode after controlling the ferroelectric polarization states in CuInP2S6. When operated in optoelectronic memory mode, the all-in-one RMD could diagnose ophthalmic disease by segmenting vasculature within biological retinas. On the other hand, operating as an optoelectronic synapse, this work showcases in-sensor reservoir computing for gesture recognition with high energy efficiency.

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications.

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility µp ≈ 1.4 cm2V-1s-1 and a subthreshold swing SS ≈ 10 V dec-1. Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW-1 at 2V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

Harnessing Persistent Photocurrent in a 2D Semiconductor-Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory.

Recently, 2D semiconductor-based optoelectronic memory has been explored to overcome the limitations of conventional von Neumann architectures by integrating optical sensing and data storage into one device. Persistent photocurrent (PPC), essential for optoelectronic memory, originates from charge carrier trapping according to the Shockley-Read-Hall (SRH) model in 2D semiconductors. The quasi-Fermi level position influences the activation of charge-trapping sites. However, the correlation between quasi-Fermi level modulations and PPC in 2D semiconductors has not been extensively studied. In this study, we demonstrate optoelectronic memory based on a 2D semiconductor-polymer hybrid structure and confirm that the underlying mechanism is charge trapping, as the SRH model explains. Under light illumination, electrons transfer from polyvinylpyrrolidone to p-type tungsten diselenide, resulting in high-level injection and majority carrier-type transitions. The quasi-Fermi level shifts upward with increasing temperature, improving PPC and enabling optoelectronic memory at 433 K. Our findings offer valuable insights into optimizing 2D semiconductor-based optoelectronic memory.

Wavelength-Dependent Multistate Programmability and Optoelectronic Logic-in-Memory Operation from the Narrow Bandgap pNDI-SVS Floating Gate.

This study introduces wavelength-dependent multistate programmable optoelectronic logic-in-memory (OLIM) operation using a broadband photoresponsive pNDI-SVS floating gate. The distinct optical absorption of the relatively large bandgap DNTT channel (2.6 eV) and the narrow bandgap pNDI-SVS floating gate (1.37 eV) lead to varying light-induced charge carrier accumulation across different wavelengths. In the proposed OLIM device comprising the p-type pNDI-SVS-based optoelectronic memory (POEM) transistor and an IGZO n-type transistor, we achieve controllable output voltage signals by modulating the pull-up performance through optical wavelength and applied bias manipulation. Real-time OLIM operation yields four discernible output values. The device's high mechanical flexibility and seamless surface integration among the paper substrate, pNDI-SVS, parylene gate dielectric, and DNTT region render it compatible for integration into paper-based optoelectronics. Our flexible POEM device on name card substrates demonstrates stable operational performance, with minimal variation (8%) after 100 cycles of repeated memory operation, remaining reliable across various angle measurements.

A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.

The optoelectronic resistive random-access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in-sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in-sensor color image cryptography. Surface plasmons of noble metals enable the strong light absorption to realize an efficient modulation of filament growth at nanoscale. Resistive switching curves show that the optical stimuli can impede the filament aggregation and promote the filament annihilation, which originates from photothermal effects and photogenerated hot electrons in localized surface plasmon resonance of noble metals. By selecting noble metals, the optoelectronic RRAM array can respond to distinct wavelengthsand mimic the biological dichromatic cone cells to perform the color perception. Due to the intrinsic and high-quality randomness, the optoelectronic RRAM can produce a PUF key in every exposure cycle, which can be applied in the reconfigurable cryptography. The findings demonstrate an effective strategy to build optoelectronic RRAM for in-sensor color image cryptography applications.

Considerable Piezochromism in All-Inorganic Zero-Dimensional Perovskite Nanocrystals via Pressure-Modulated Self-Trapped Exciton Emission.

Piezochromic materials refer to a class of matters that alter their photoluminescence (PL) colors in response to the external stimuli, which exhibit promising smart applications in anti-counterfeiting, optoelectronic memory and pressure-sensing. However, so far, most reported piezochromic materials have been confined to organic materials or hybrid materials containing organic moieties with limited piezochromic range of less than 100 nm in visible region. Here, we achieved an intriguing piezochromism in all-inorganic zero-dimensional (0D) Cs3Cu2Cl5 nanocrystals (NCs) with a considerable piezochromic range of 232 nm because of their unique inorganic rigid structure. The PL energy shifted from the lowest-energy red fluorescence (1.85 eV) to the highest-energy blue fluorescence (2.83 eV), covering almost the entire visible wavelength range. Pressure-modulated self-trapped exciton emission between different energy levels of self-trapped states within Cs3Cu2Cl5 NCs was the main reason for this piezochromism property. Note that the quenched emission, which is over five times more intense than that in the initial state, is retained under ambient conditions upon decompression. This work provides a promising pressure indicating material, particularly used in pressure stability monitoring for equipment working at extreme environments.

Considerable Piezochromism in All‐Inorganic Zero‐Dimensional Perovskite Nanocrystals via Pressure‐Modulated Self‐Trapped Exciton Emission

AbstractPiezochromic materials refer to a class of matters that alter their photoluminescence (PL) colors in response to the external stimuli, which exhibit promising smart applications in anti‐counterfeiting, optoelectronic memory and pressure‐sensing. However, so far, most reported piezochromic materials have been confined to organic materials or hybrid materials containing organic moieties with limited piezochromic range of less than 100 nm in visible region. Here, we achieved an intriguing piezochromism in all‐inorganic zero‐dimensional (0D) Cs3Cu2Cl5 nanocrystals (NCs) with a considerable piezochromic range of 232 nm because of their unique inorganic rigid structure. The PL energy shifted from the lowest‐energy red fluorescence (1.85 eV) to the highest‐energy blue fluorescence (2.83 eV), covering almost the entire visible wavelength range. Pressure‐modulated self‐trapped exciton emission between different energy levels of self‐trapped states within Cs3Cu2Cl5 NCs was the main reason for this piezochromism property. Note that the quenched emission, which is over five times more intense than that in the initial state, is retained under ambient conditions upon decompression. This work provides a promising pressure indicating material, particularly used in pressure stability monitoring for equipment working at extreme environments.

Giant persistent photoconductivity of VO2 device by single-pulse femtosecond laser

The manifestation of giant persistent photoconductivity (GPPC) is demonstrated with a fs (femtosecond) Ti:sapphire laser pulse that has a duration of 40 fs and a central wavelength of 400 nm. The femtosecond laser pulse was irradiated on a two-terminal VO2 device fabricated on a corning glass substrate. Under the applied voltages of 9–12 V, the GPPC takes place within 8.6–15 μs after the laser irradiation. The photocurrent from the GPPC in the VO2 device remains stable with the current decreasing slope of ∼0.003%/minute. With one-dimensional thermal model, the temperature (TIR) of the irradiated area is estimated as a function of time, indicating that TIR is above the insulation-to-metal transition temperature of VO2 thin film prior to the onset of GPPC. The ultrafast onset of GPPC of VO2 device can be utilized for ultrafast optoelectronic switch and memory device.

Synthesis, Characterization, and Resistive Memory Behaviors of Highly Strained Cyclometalated Platinum(II) Nanohoops.

Strained carbon nanohoops exhibit attractive photophysical properties due to their unique π-conjugated structure. However, incorporation of such nanohoops into the pincer ligand of metal complexes has rarely been explored. Herein, a new family of highly strained cyclometalated platinum(II) nanohoops has been synthesized and characterized. Strain-promoted C-H bond activation has been observed during the metal coordination process, and Hückel-Möbius topology and random-columnar packing in the solid state are found. Transient absorption spectroscopy revealed the size-dependent excited state properties of the nanohoops. Moreover, the nanohoops have been successfully employed as active materials in the fabrication of solution-processable resistive memory devices, including the use of the smallest platinum(II) nanohoop for the fabrication of a binary memory, with low switching threshold voltages of ca. 1.5 V, high ON/OFF current ratios, and good stability. These results demonstrate that strain incorporation into the structure can be an effective strategy to fundamentally fine-tune the reactivity, optoelectronic, and resistive memory properties.

Self-powered photodetector based on 1D TiO2-3D CdS mixed dimensional heterostructure fabricated at low temperature

Solution processed photodetectors have garnered great attention in applications such as, machine vision perception, neuromorphic computing and opto-electronic memory storage. Though, such photodetectors offer several advantages such as ease of fabrication, high scalability, low thermal budget and low-cost processing, multi-modal functionality etc. however, they suffer from the major drawback of inferior device performance −as low responsivity and slow rise time, particularly due to the intrinsic poor crystallinity of the photoactive material. In this work, we demonstrate a solution processed photodetector with impressive performance at comparatively low processing temperatures (<150 °C) based on the mixed dimensional heterostructure configuration of 1D TiO2 nanorods and 3D CdS nanoflowers. TiO2 nanorods have been synthesized by hydrothermal technique, whereas their CdS sensitization is done by chemical bath deposition. Low cost carbon paste is used as electrode instead of conventional non-economic noble metal electrodes. X-ray diffraction studies validated excellent crystallinity of the photoactive material even under low temperature processing condition. The type-II Heterojunction (TiO2 and CdS) configuration photodetector shows efficient response at zero bias, thus yielding a self-powered device. The detector shows response in UV and visible region, with excellent responsivity of 110 mA/W (5 V), 563 µA/W (0 V) and a quicker rise time of 81 ms. Albeit the simple fabrication scheme and low processing temperatures, the detector exhibited promising figures-of-merit, which aids in fabrication of novel solution processed photodetectors.

N‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

AbstractThe family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n‐type conduction behavior and wide hysteresis at the ambient conditions. The device shows high mobility up to 28 cm2 V−1 s−1 with Ion/Ioff ratio over 103. Under the laser exposure, the device shows a decrease in the threshold voltage and a left‐shift of the transfer characteristic with a slight increase in the current. The transfer characteristic exhibits a hysteretic behavior with hysteresis width linearly dependent on the applied gate voltage. Moreover, the GaSe‐based FET shows a photo response with a photoresponsivity of 475 mAW−1 and detectivity of 4.6 × 1012 Jones. The photocurrent rise and decay times are 0.1 and 1.3 s, respectively. Furthermore, the GaSe FET device can be used as a performant memory device with well separated states and memory window enhanced by the laser exposure, confirming an optoelectronic memory class.

Dual Mode Optoelectronic Devices Based on 2D Single Crystalline VO2 Films with Controlled Metallic Domain Regime Induced Variable Hysteresis

AbstractThe multimode optoelectronic operation in a single component device is an attractive design strategy for future optoelectronics, which demands unique and complex multifunction. Here, a novel dual‐mode optoelectronic device with both memory and switching functionalities by utilizing alternating metallic stripe domain regime‐induced controllable hysteresis of two dimensional (2D)‐crystalline VO2 films is reported. It is found that the formation and disappearance of tensile strain‐induced metallic stripe domain arrays are susceptible to temperature‐induced thermal energy, allowing controllable hysteresis in electric field‐induced metal‐insulator transition (E‐MIT) by tuning the total region of aligned metallic stripe domains within the VO2 films through current flow‐induced thermal energy. Based on the tunable hysteresis in E‐MIT, the 2D‐crystalline VO2 film‐based device exhibits successful multimode optoelectronic memory and switching operations. The device with a large hysteresis width exhibits high‐performance optoelectronic memory behavior with a high on/off ratio of up to ≈55% and a long retention time over 5000 s response to a light pulse optically triggering MIT. On the other hand, the 2D‐crystalline VO2 film device with a narrow hysteresis width exhibits high performance of photodetection with a responsivity of 316 mA W−1 and response times of ≈1.2 and ≈2 µs at rise and fall, respectively.

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 A∙W−1, normalized detectivity of 5.80 × 1012 cm∙Hz1/2∙W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 A∙W−1, 7.03 × 1012 cm∙Hz1/2∙W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.

Fast and robust multilevel optoelectronic memory based on van der Waals heterostructure

Optoelectronic memory (OEM) has attracted tremendous attention for its great potential to boost the storage capacity of memory chips and break through the von Neumann bottleneck in the post-Moore era. Two-dimensional (2D) van der Waals (vdW) heterostructures, formed by artificially stacking different 2D layered materials, offer tremendous possibilities in OEMs due to their extraordinary capability to integrate and process optical/electrical signals. However, the realization of 2D vdW OEMs with high writing speed and robust memory performance has long been challenging. Here, we report a 2D vdW OEM consisting of tungsten diselenide (WSe2) and hexagonal boron nitride, which functions based on the fast charge transfer dynamics at a 2D interface. The OEM demonstrates high writing speed reaching up to 50 μs, approximately one order of magnitude faster than those of other 2D OEMs. Moreover, the outstanding robustness of such OEM is demonstrated by long retention time exceeding 14 days, together with a broad temperature endurance window from 100 to 420 K. Additionally, through continuously switching laser pulse on the OEM, we achieve 17 distinct current levels (over 4-bit storage) with random access. Our findings envision 2D vdW heterostructure-based OEM as a potential platform to overcome the “memory wall” in the conventional von Neumann configuration and to promote a promising paradigm for big data storage.

Miniaturized spectrometer with intrinsic long-term image memory

Miniaturized spectrometers have great potential for use in portable optoelectronics and wearable sensors. However, current strategies for miniaturization rely on von Neumann architectures, which separate the spectral sensing, storage, and processing modules spatially, resulting in high energy consumption and limited processing speeds due to the storage-wall problem. Here, we present a miniaturized spectrometer that utilizes a single SnS2/ReSe2 van der Waals heterostructure, providing photodetection, spectrum reconstruction, spectral imaging, long-term image memory, and signal processing capabilities. Interface trap states are found to induce a gate-tunable and wavelength-dependent photogating effect and a non-volatile optoelectronic memory effect. Our approach achieves a footprint of 19 μm, a bandwidth from 400 to 800 nm, a spectral resolution of 5 nm, and a > 104 s long-term image memory. Our single-detector computational spectrometer represents a path beyond von Neumann architectures.

2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory.

Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices.